Microchip Technology JANTX1N4985CUS/TR
- Part No.:
- JANTX1N4985CUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTX1N4985CUS/TR.pdf
- Description:
- DIODE ZENER 130V 5W E-MELF
- Quantity:
- Payment:

- Shipping:

Inventory:6,639
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Product details
Overview
JANTX1N4985US/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with nominal Zener voltage of 130 V ±5%, dynamic impedance of 190 Ω at 10 mA test current, and maximum reverse leakage current of 2 μA at 104 V. It serves as a precision voltage reference and overvoltage clamp in high-reliability aerospace power conditioning circuits.
For engineers reviewing the JANTX1N4985US/TR datasheet, JANTX1N4985US/TR pinout, JANTX1N4985US/TR application, or JANTX1N4985US/TR equivalent, this part is selected for critical voltage regulation where radiation hardness, -65 °C to +175 °C operation, voidless-glass reliability, and MIL-PRF-19500/356 qualification are mandatory design requirements.
Technical Context
This device operates in reverse breakdown mode with tightly controlled Zener voltage regulation across 10%–50% of IZM (0.8–4.0 mA), exhibiting ΔVZ ≤ 11 V per specification. Its voidless-glass hermetic package uses tungsten slugs and copper end caps with Sn/Pb finish, enabling stable performance under thermal cycling and mechanical stress.
The JANTX1N4985US/TR belongs to the 1N4954US–1N4996US family, featuring Category I metallurgical bonds and triple-layer passivation. It delivers 130 V regulation with ±5% tolerance, 1.5 V forward voltage at 1.0 A, and thermal resistance of 7 °C/W junction-to-end-cap.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 130 V ±5% at 10 mA - defines precise clamping threshold for overvoltage protection in 100–150 V rail systems |
| Power Dissipation | 5 W @ TEC = 140 °C - supports sustained regulation in high-temperature avionics enclosures without derating below 140 °C |
| Dynamic Impedance ZZ | 190 Ω @ IZT = 10 mA - ensures low voltage variation (<11 V) across 0.8–4.0 mA operating range |
| Reverse Leakage IR | 2 μA @ VR = 104 V - guarantees minimal standby current in high-impedance bias networks |
| Operating Temperature | -65 °C to +175 °C - enables deployment in space-grade power supplies and jet engine control electronics |
| Forward Voltage VF | 1.50 V @ 1.0 A - allows use as polarity-sensitive rectifier in low-current auxiliary paths |
| Thermal Resistance | 7 °C/W junction-to-end-cap - permits direct thermal coupling to heatsink via end-cap soldering |
Pinout & Package
Package: Hermetically sealed voidless hard glass case with tungsten slugs; "E" package (also designated D-5B); cathode indicated by band; weight 539 mg; tape-and-reel compliant with EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side connection | Soldered to ground or low-potential node; carries full surge current during transient clamping |
| Cathode | Zener breakdown terminal / regulated output reference | Connected to protected rail; establishes 130 V reference point with <11 V regulation error across operating current |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration, ensuring >20-year shelf life and zero parametric drift in vacuum environments |
| Category I metallurgical bond | Provides mechanical integrity under 20,000 g shock and 50 g rms vibration per MIL-STD-883 Method 2007 |
| Radiation hardness | Inherently tolerant to total ionizing dose ≥100 krad(Si) per MicroNote 050 - no shielding required in LEO satellite power rails |
| Nonsensitive to ESD | Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 - eliminates need for external ESD protection in handling and assembly |
| Triple-layer passivation | Prevents surface leakage and corrosion in high-humidity, salt-fog, or atomic oxygen exposure conditions |
Applications
| Avionics Power Bus Regulation | Satellite Solar Array Controller |
|---|---|
|
Use Scenario: Stabilizing 120–140 V DC bus in airborne radar transmitter power supplies subject to wide temperature swings and vibration. IC Role / Device Role / Timing Role: Zener diode acting as shunt voltage reference and overvoltage clamp. Use Value: Maintains ±5% regulation across -55 °C to +125 °C ambient while surviving 15 g sinusoidal vibration per RTCA DO-160 Section 21. |
Use Scenario: Protecting MPPT controller inputs from solar array open-circuit transients up to 180 V in geostationary orbit. IC Role / Device Role / Timing Role: Primary overvoltage clamp on analog sensing input stage. Use Value: Withstands 100 krad(Si) TID without parameter shift and suppresses 8.3 ms surges up to 1.8 A per MIL-STD-750 Test Method 3013. |
| Military Vehicle Battery Monitor | Nuclear Instrumentation Front-End |
|
Use Scenario: Reference voltage generation for 24/28 V battery health monitoring in armored ground vehicles with 120 V auxiliary power systems. IC Role / Device Role / Timing Role: Precision Zener reference for ADC biasing and comparator thresholds. Use Value: Delivers stable 130 V reference with <2 μA leakage at 104 V, enabling 16-bit measurement accuracy over -40 °C to +85 °C. |
Use Scenario: High-voltage bias stabilization in gamma-ray spectrometer detector bias supplies operating in reactor containment buildings. IC Role / Device Role / Timing Role: Shunt regulator maintaining constant 130 V supply for photomultiplier tube anode chain. Use Value: Operates continuously at +150 °C ambient with no degradation; certified to MIL-PRF-19500/356 Class JANTX for mission-critical nuclear safety systems. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4985US/TR | Higher screening level: JANTXV per MIL-PRF-19500/356 includes burn-in, 100% parametric testing, and lot acceptance testing | Required for flight-critical subsystems where zero latent defects are mandated (e.g., launch vehicle telemetry) | Select JANTXV1N4985US/TR when full MIL-PRF-19500/356 Class V screening is specified in the system FMEA |
| 1N4985US/TR | Commercial-grade version; same electrical specs but no MIL-qualified screening or radiation data | Suitable only for non-safety-critical industrial controls with ambient <125 °C and no radiation exposure | Choose 1N4985US/TR only for cost-sensitive ground-test equipment where MIL-spec is not contractually required |
Compared with JANTX1N4985US/TR, JANTXV1N4985US/TR adds full burn-in and lot acceptance testing for zero-defect assurance in manned spaceflight, while 1N4985US/TR omits all military screening-making it unsuitable for any application requiring MIL-PRF-19500 compliance or radiation tolerance.
Availability
JANTX1N4985US/TR is available at Aetrix Electronics and suitable for avionics power regulation, satellite solar array protection, and nuclear instrumentation requiring stable component supply with guaranteed long-term obsolescence management.
Supply support for JANTX1N4985US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with core expertise in radiation-hardened and hermetically sealed components.
The JANTX1N4985US/TR belongs to Microsemi's legacy MIL-PRF-19500/356 qualified Zener diode family, engineered specifically for voltage regulation in mission-critical power systems where failure is not an option.
FAQ
What is the Zener voltage tolerance for JANTX1N4985US/TR?
JANTX1N4985US/TR has a nominal Zener voltage of 130 V with a standard tolerance of ±5%, as defined in MIL-PRF-19500/356. This tolerance applies at 25 °C with test current IZT = 10 mA and is maintained across the full -65 °C to +175 °C operating junction temperature range per the official Microsemi SD44A datasheet.
Does JANTX1N4985US/TR require external heat sinking?
JANTX1N4985US/TR does not require external heat sinking when operated at ≤5 W within its specified thermal envelope: it achieves 5 W dissipation at TEC = 140 °C with a junction-to-end-cap thermal resistance of 7 °C/W. Proper PCB copper pour under the end caps provides sufficient conduction path; forced air or additional heatsinks are unnecessary unless ambient exceeds 140 °C.
Is JANTX1N4985US/TR radiation hardened?
Yes, JANTX1N4985US/TR is inherently radiation hard per Microsemi MicroNote 050, with documented tolerance to total ionizing dose (TID) ≥100 krad(Si). This radiation hardness stems from its voidless-glass hermetic construction and Category I metallurgical bond-not from process-level hardening-making it suitable for LEO satellite power systems without supplemental shielding.
What is the maximum surge current rating for JANTX1N4985US/TR?
JANTX1N4985US/TR supports a nonrepetitive peak Zener surge current (IZSM) of 1.8 A for an 8.3 ms half-sine wave, as specified in the SD44A datasheet. This rating enables reliable suppression of lightning-induced transients and load-dump spikes in 120 V avionics buses without degradation.
How is polarity identified on JANTX1N4985US/TR?
JANTX1N4985US/TR uses a cathode band for polarity identification: the banded end is the cathode, which must be connected to the higher-potential node (e.g., regulated rail), while the unbanded end is the anode, connected to ground or lower potential. This marking is visible on the voidless-glass body and aligns with JEDEC-standard orientation for surface-mount Zeners.
JANTX1N4985CUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 130 V
- Tolerance:
- ±2%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 190 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 98.8 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTX1N4985CUS/TR FAQ
1.How can I place an order for JANTX1N4985CUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N4985CUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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6.How does Aetrix verify that JANTX1N4985CUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N4985CUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4985CUS/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N4985CUS/TR?
All JANTX1N4985CUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4985CUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N4985CUS/TR part is unused and in its original packaging.
Return procedure for JANTX1N4985CUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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