Microchip Technology JANTX1N4985DUS/TR
- Part No.:
- JANTX1N4985DUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTX1N4985DUS/TR.pdf
- Description:
- DIODE ZENER 130V 5W E-MELF
- Quantity:
- Payment:

- Shipping:

Inventory:4,782
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Product details
Overview
JANTX1N4985DUS/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation, with a nominal Zener voltage of 130 V at 10 mA test current, ±1% tolerance (D suffix), and operating junction temperature range of −65 °C to +175 °C. It serves as a precision voltage reference and overvoltage clamp in high-reliability aerospace power conditioning circuits.
For engineers reviewing the JANTX1N4985DUS/TR datasheet, JANTX1N4985DUS/TR pinout, JANTX1N4985DUS/TR application, or JANTX1N4985DUS/TR equivalent, key selection criteria include its voidless-glass hermetic package, Category I metallurgical bond, 1.5 V forward voltage at 1.0 A, and radiation-hardened construction per MicroNote 050 - critical for MIL-PRF-19500/356-compliant designs.
Technical Context
This device belongs to the 1N4954US–1N4996US family, qualified to MIL-PRF-19500/356 under JAN/JANTX level. It employs triple-layer passivation and an internal Category I metallurgical bond between silicon die and tungsten slugs, ensuring mechanical robustness and long-term stability under thermal cycling and vibration stress.
Its electrical behavior is defined by a 130 V nominal Zener voltage at IZT = 10 mA, dynamic impedance ZZ = 190 Ω at IZT, and low temperature coefficient of +0.105 %/°C - enabling stable regulation across wide ambient and load variations in avionics power rails.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 130 V ±1% at 10 mA - provides precise clamping threshold for 120–140 V DC bus protection |
| Power Dissipation | 5 W @ TEC = 140 °C - supports continuous regulation in conduction-cooled chassis mounts |
| Dynamic Impedance ZZ | 190 Ω at IZT - ensures <1.9 V output variation over 1–5 mA regulation current swing |
| Max Reverse Leakage | 2 μA at 104 V - enables ultra-low standby current in battery-backed hold-up circuits |
| Forward Voltage VF | 1.50 V at 1.0 A - allows use as series-pass element in low-dropout pre-regulators |
| Temp Coefficient αVZ | +0.105 %/°C - predictable positive drift simplifies temperature-compensated reference design |
| Surge Current IZSM | 0.80 A (8.3 ms square wave) - withstands lightning-induced transients in aircraft power entry stages |
Pinout & Package
Hermetically sealed voidless glass case with tungsten slugs and copper end caps (Sn/Pb finish); cathode indicated by band; "E" package (also designated D-5B), surface-mount compatible with EIA-481-B tape-and-reel.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current sink in reverse bias / forward conduction path | Connected to system ground or low-side return; must handle full surge current during transient events |
| Cathode | Regulated voltage output node | Provides stable 130 V reference; requires low-inductance PCB routing to minimize ringing during fast transients |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination risk over 20+ year service life in humid environments |
| Category I metallurgical bond | Ensures die-to-leadframe adhesion integrity under MIL-STD-883 shock/vibration profiles (Method 2002) |
| Nonsensitive to ESD | Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure |
| Radiation hardness | Qualified to 100 krad(Si) TID per Microsemi MicroNote 050 - suitable for low-earth orbit avionics |
| Triple-layer passivation | Prevents surface leakage paths and ion migration under high humidity and bias stress |
Applications
| Aerospace Power Bus Clamp | Avionics Reference Voltage Source |
|---|---|
|
Use Scenario: Clamping 270 VDC aircraft main bus against load dump and lightning-induced surges. IC Role / Device Role / Timing Role: Zener diode acting as shunt regulator and transient voltage suppressor. Use Value: 5 W continuous rating and 0.80 A surge capability enable single-device protection without external heat sinking. |
Use Scenario: Providing stable 130 V reference for analog-to-digital converter biasing in flight control computers. IC Role / Device Role / Timing Role: Precision voltage reference with ±1% tolerance and low TC. Use Value: +0.105 %/°C tempco allows predictable drift compensation in closed-loop calibration algorithms. |
| Satellite Power Conditioning | Military Radar Bias Supply |
|
Use Scenario: Regulating auxiliary 130 V rail for RF amplifier bias in LEO satellite payloads. IC Role / Device Role / Timing Role: Radiation-hardened Zener reference in unregulated DC-DC converter feedback path. Use Value: 100 krad(Si) TID tolerance and −65 °C to +175 °C operation support extended mission life in vacuum thermal cycles. |
Use Scenario: Stabilizing high-voltage bias for magnetron driver stages in ground-based radar transmitters. IC Role / Device Role / Timing Role: High-reliability shunt regulator maintaining constant voltage under pulsed load conditions. Use Value: 190 Ω dynamic impedance ensures <2 V regulation error across 1–5 mA load variation during pulse modulation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4985DUS/TR | Higher screening level (JANTXV vs JANTX); tighter parametric limits on leakage and tempco per MIL-PRF-19500/356 | Required for space-qualified systems where burn-in and lot acceptance testing exceed JANTX requirements | Select when mission-critical redundancy or extended lifetime (>15 yr) demands enhanced screening rigor |
| 1N4985US | Commercial-grade version; no MIL-qualified screening; same electrical specs and package | Suitable for non-military prototypes or cost-sensitive industrial test equipment | Choose for bench validation or non-certified subsystems where radiation hardness and ESD immunity are not required |
Compared with JANTX1N4985DUS/TR, JANTXV1N4985DUS/TR adds extended environmental stress screening and tighter leakage bounds, while 1N4985US removes all military qualification but retains identical Zener characteristics and thermal performance - enabling tiered qualification strategies across development, qualification, and production phases.
Availability
JANTX1N4985DUS/TR is available at Aetrix Electronics and suitable for aerospace power bus clamping, avionics reference voltage generation, and satellite power conditioning requiring stable component supply across long-lifecycle programs.
Supply support for JANTX1N4985DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified components for defense, aerospace, and industrial markets.
The JANTX1N4985DUS/TR belongs to Microsemi's legacy 1N49xxUS Zener series, engineered specifically for MIL-PRF-19500/356 compliance and extreme-environment voltage regulation in safety-critical systems.
FAQ
What is the Zener voltage tolerance for JANTX1N4985DUS/TR?
JANTX1N4985DUS/TR has a nominal Zener voltage of 130 V with ±1% tolerance, indicated by the "D" suffix per Microsemi's standard coding. This tight tolerance is achieved through post-trim screening and applies at the specified test current of 10 mA, supporting precision regulation in feedback loops where absolute voltage accuracy is critical.
Does JANTX1N4985DUS/TR require derating above 140 °C case temperature?
Yes, JANTX1N4985DUS/TR must be linearly derated above 140 °C case temperature (TEC) to zero power at 175 °C, per MIL-PRF-19500/356 maximum ratings. Its thermal resistance is 7 °C/W junction-to-end-cap, so effective power handling drops to ~3.5 W at 160 °C TEC, requiring careful thermal interface design in high-ambient applications.
Is JANTX1N4985DUS/TR compatible with lead-free reflow processes?
JANTX1N4985DUS/TR features Sn/Pb terminations and is not qualified for lead-free reflow. Its end caps use tin/lead finish, and the voidless glass package is optimized for traditional eutectic solder profiles. For RoHS-compliant assembly, consult Microchip's obsolescence roadmap or consider qualified alternatives like the JANS1N4985DUS/TR with updated termination options.
What does the "US" suffix indicate in JANTX1N4985DUS/TR?
The "US" suffix in JANTX1N4985DUS/TR denotes the surface-mount "E" package (D-5B outline), distinguishing it from axial-leaded versions (e.g., JANTX1N4985D). This suffix confirms hermetically sealed voidless glass construction, tungsten slug leads, and tape-and-reel packaging per EIA-481-B - essential for automated SMT placement in high-reliability PCBs.
How is radiation hardness verified for JANTX1N4985DUS/TR?
Radiation hardness for JANTX1N4985DUS/TR is documented in Microsemi MicroNote 050, confirming total ionizing dose (TID) tolerance up to 100 krad(Si) with parametric stability. This qualification is inherent to the device's silicon process and hermetic packaging - no additional testing is required for JANTX-level parts meeting MIL-PRF-19500/356.
JANTX1N4985DUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 130 V
- Tolerance:
- ±1%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 190 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 98.8 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTX1N4985DUS/TR FAQ
1.How can I place an order for JANTX1N4985DUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N4985DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N4985DUS/TR reliable?
The price and inventory of JANTX1N4985DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N4985DUS/TR is usually 5 days.
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5.How can I obtain technical support or documentation for JANTX1N4985DUS/TR?
For technical support, including JANTX1N4985DUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N4985DUS/TR requirements.
6.How does Aetrix verify that JANTX1N4985DUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N4985DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4985DUS/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N4985DUS/TR?
All JANTX1N4985DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4985DUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N4985DUS/TR part is unused and in its original packaging.
Return procedure for JANTX1N4985DUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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