Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JANTX1N4985DUS/TR

Part No.:
JANTX1N4985DUS/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTX1N4985DUS/TR.pdf
Description:
DIODE ZENER 130V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,782

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JANTX1N4985DUS/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation, with a nominal Zener voltage of 130 V at 10 mA test current, ±1% tolerance (D suffix), and operating junction temperature range of −65 °C to +175 °C. It serves as a precision voltage reference and overvoltage clamp in high-reliability aerospace power conditioning circuits.

For engineers reviewing the JANTX1N4985DUS/TR datasheet, JANTX1N4985DUS/TR pinout, JANTX1N4985DUS/TR application, or JANTX1N4985DUS/TR equivalent, key selection criteria include its voidless-glass hermetic package, Category I metallurgical bond, 1.5 V forward voltage at 1.0 A, and radiation-hardened construction per MicroNote 050 - critical for MIL-PRF-19500/356-compliant designs.

Technical Context

This device belongs to the 1N4954US–1N4996US family, qualified to MIL-PRF-19500/356 under JAN/JANTX level. It employs triple-layer passivation and an internal Category I metallurgical bond between silicon die and tungsten slugs, ensuring mechanical robustness and long-term stability under thermal cycling and vibration stress.

Its electrical behavior is defined by a 130 V nominal Zener voltage at IZT = 10 mA, dynamic impedance ZZ = 190 Ω at IZT, and low temperature coefficient of +0.105 %/°C - enabling stable regulation across wide ambient and load variations in avionics power rails.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage VZ 130 V ±1% at 10 mA - provides precise clamping threshold for 120–140 V DC bus protection
Power Dissipation 5 W @ TEC = 140 °C - supports continuous regulation in conduction-cooled chassis mounts
Dynamic Impedance ZZ 190 Ω at IZT - ensures <1.9 V output variation over 1–5 mA regulation current swing
Max Reverse Leakage 2 μA at 104 V - enables ultra-low standby current in battery-backed hold-up circuits
Forward Voltage VF 1.50 V at 1.0 A - allows use as series-pass element in low-dropout pre-regulators
Temp Coefficient αVZ +0.105 %/°C - predictable positive drift simplifies temperature-compensated reference design
Surge Current IZSM 0.80 A (8.3 ms square wave) - withstands lightning-induced transients in aircraft power entry stages

Pinout & Package

Hermetically sealed voidless glass case with tungsten slugs and copper end caps (Sn/Pb finish); cathode indicated by band; "E" package (also designated D-5B), surface-mount compatible with EIA-481-B tape-and-reel.

Pin/Terminal Circuit Role Design Meaning
Anode Current sink in reverse bias / forward conduction path Connected to system ground or low-side return; must handle full surge current during transient events
Cathode Regulated voltage output node Provides stable 130 V reference; requires low-inductance PCB routing to minimize ringing during fast transients

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates moisture ingress and internal delamination risk over 20+ year service life in humid environments
Category I metallurgical bond Ensures die-to-leadframe adhesion integrity under MIL-STD-883 shock/vibration profiles (Method 2002)
Nonsensitive to ESD Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure
Radiation hardness Qualified to 100 krad(Si) TID per Microsemi MicroNote 050 - suitable for low-earth orbit avionics
Triple-layer passivation Prevents surface leakage paths and ion migration under high humidity and bias stress

Applications

Aerospace Power Bus Clamp Avionics Reference Voltage Source

Use Scenario: Clamping 270 VDC aircraft main bus against load dump and lightning-induced surges.

IC Role / Device Role / Timing Role: Zener diode acting as shunt regulator and transient voltage suppressor.

Use Value: 5 W continuous rating and 0.80 A surge capability enable single-device protection without external heat sinking.

Use Scenario: Providing stable 130 V reference for analog-to-digital converter biasing in flight control computers.

IC Role / Device Role / Timing Role: Precision voltage reference with ±1% tolerance and low TC.

Use Value: +0.105 %/°C tempco allows predictable drift compensation in closed-loop calibration algorithms.

Satellite Power Conditioning Military Radar Bias Supply

Use Scenario: Regulating auxiliary 130 V rail for RF amplifier bias in LEO satellite payloads.

IC Role / Device Role / Timing Role: Radiation-hardened Zener reference in unregulated DC-DC converter feedback path.

Use Value: 100 krad(Si) TID tolerance and −65 °C to +175 °C operation support extended mission life in vacuum thermal cycles.

Use Scenario: Stabilizing high-voltage bias for magnetron driver stages in ground-based radar transmitters.

IC Role / Device Role / Timing Role: High-reliability shunt regulator maintaining constant voltage under pulsed load conditions.

Use Value: 190 Ω dynamic impedance ensures <2 V regulation error across 1–5 mA load variation during pulse modulation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N4985DUS/TR Higher screening level (JANTXV vs JANTX); tighter parametric limits on leakage and tempco per MIL-PRF-19500/356 Required for space-qualified systems where burn-in and lot acceptance testing exceed JANTX requirements Select when mission-critical redundancy or extended lifetime (>15 yr) demands enhanced screening rigor
1N4985US Commercial-grade version; no MIL-qualified screening; same electrical specs and package Suitable for non-military prototypes or cost-sensitive industrial test equipment Choose for bench validation or non-certified subsystems where radiation hardness and ESD immunity are not required

Compared with JANTX1N4985DUS/TR, JANTXV1N4985DUS/TR adds extended environmental stress screening and tighter leakage bounds, while 1N4985US removes all military qualification but retains identical Zener characteristics and thermal performance - enabling tiered qualification strategies across development, qualification, and production phases.

Availability

JANTX1N4985DUS/TR is available at Aetrix Electronics and suitable for aerospace power bus clamping, avionics reference voltage generation, and satellite power conditioning requiring stable component supply across long-lifecycle programs.

Supply support for JANTX1N4985DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability, radiation-hardened, and military-qualified components for defense, aerospace, and industrial markets.

The JANTX1N4985DUS/TR belongs to Microsemi's legacy 1N49xxUS Zener series, engineered specifically for MIL-PRF-19500/356 compliance and extreme-environment voltage regulation in safety-critical systems.

FAQ

What is the Zener voltage tolerance for JANTX1N4985DUS/TR?

JANTX1N4985DUS/TR has a nominal Zener voltage of 130 V with ±1% tolerance, indicated by the "D" suffix per Microsemi's standard coding. This tight tolerance is achieved through post-trim screening and applies at the specified test current of 10 mA, supporting precision regulation in feedback loops where absolute voltage accuracy is critical.

Does JANTX1N4985DUS/TR require derating above 140 °C case temperature?

Yes, JANTX1N4985DUS/TR must be linearly derated above 140 °C case temperature (TEC) to zero power at 175 °C, per MIL-PRF-19500/356 maximum ratings. Its thermal resistance is 7 °C/W junction-to-end-cap, so effective power handling drops to ~3.5 W at 160 °C TEC, requiring careful thermal interface design in high-ambient applications.

Is JANTX1N4985DUS/TR compatible with lead-free reflow processes?

JANTX1N4985DUS/TR features Sn/Pb terminations and is not qualified for lead-free reflow. Its end caps use tin/lead finish, and the voidless glass package is optimized for traditional eutectic solder profiles. For RoHS-compliant assembly, consult Microchip's obsolescence roadmap or consider qualified alternatives like the JANS1N4985DUS/TR with updated termination options.

What does the "US" suffix indicate in JANTX1N4985DUS/TR?

The "US" suffix in JANTX1N4985DUS/TR denotes the surface-mount "E" package (D-5B outline), distinguishing it from axial-leaded versions (e.g., JANTX1N4985D). This suffix confirms hermetically sealed voidless glass construction, tungsten slug leads, and tape-and-reel packaging per EIA-481-B - essential for automated SMT placement in high-reliability PCBs.

How is radiation hardness verified for JANTX1N4985DUS/TR?

Radiation hardness for JANTX1N4985DUS/TR is documented in Microsemi MicroNote 050, confirming total ionizing dose (TID) tolerance up to 100 krad(Si) with parametric stability. This qualification is inherent to the device's silicon process and hermetic packaging - no additional testing is required for JANTX-level parts meeting MIL-PRF-19500/356.

JANTX1N4985DUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
130 V
Tolerance:
±1%
Power - Max:
5 W
Impedance (Max) (Zzt):
190 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 98.8 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTX1N4985DUS/TR FAQ

1.How can I place an order for JANTX1N4985DUS/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTX1N4985DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTX1N4985DUS/TR reliable?

The price and inventory of JANTX1N4985DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N4985DUS/TR is usually 5 days.

3.What payment methods are accepted for JANTX1N4985DUS/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTX1N4985DUS/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTX1N4985DUS/TR?

JANTX1N4985DUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTX1N4985DUS/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTX1N4985DUS/TR?

For technical support, including JANTX1N4985DUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N4985DUS/TR requirements.

6.How does Aetrix verify that JANTX1N4985DUS/TR is sourced from the original manufacturer or authorized distributors?

All JANTX1N4985DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4985DUS/TR meets industry standards.

7.What is the process for return or replacement of JANTX1N4985DUS/TR?

All JANTX1N4985DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4985DUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTX1N4985DUS/TR part is unused and in its original packaging.

Return procedure for JANTX1N4985DUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JANTX1N4985DUS/TR Tags

  • JANTX1N4985DUS/TR
  • JANTX1N4985DUS/TR PDF
  • JANTX1N4985DUS/TR Datasheet
  • JANTX1N4985DUS/TR Specifications
  • JANTX1N4985DUS/TR Images
  • Microchip Technology
  • Microchip Technology JANTX1N4985DUS/TR
  • Buy JANTX1N4985DUS/TR
  • JANTX1N4985DUS/TR Price
  • JANTX1N4985DUS/TR Distributor
  • JANTX1N4985DUS/TR Supplier
  • JANTX1N4985DUS/TR Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER