Microchip Technology JANTX1N4985US/TR
- Part No.:
- JANTX1N4985US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTX1N4985US/TR.pdf
- Description:
- DIODE ZENER 130V 5W E-MELF
- Quantity:
- Payment:

- Shipping:

Inventory:4,108
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Product details
Overview
JANTX1N4985US/TR from Microsemi is a hermetically sealed, voidless-glass surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with nominal Zener voltage of 130 V at 10 mA test current, ±5% tolerance, and maximum dynamic impedance of 190 Ω at IZT - used in high-reliability voltage regulation for aerospace power conditioning and radiation-hardened analog reference circuits.
For engineers reviewing the JANTX1N4985US/TR datasheet, JANTX1N4985US/TR pinout, JANTX1N4985US/TR application, or JANTX1N4985US/TR equivalent, key selection criteria include military-grade hermeticity (MIL-PRF-19500/356), −65 °C to +175 °C operating junction temperature, 1.5 V forward voltage at 1.0 A, and compatibility with EIA-481-B tape-and-reel packaging for automated SMT assembly.
Technical Context
This device operates as a precision voltage reference in reverse-biased breakdown mode, delivering stable regulation across 10%–50% of its maximum Zener current (IZM = 36.6 mA) with ΔVZ ≤ 11 V. Its voidless glass construction and Category I metallurgical bond ensure long-term stability under thermal cycling and mechanical stress.
The JANTX1N4985US/TR exhibits a positive temperature coefficient of +0.105 %/°C at IZT and maintains ≤2 μA reverse leakage at VR = 104 V, supporting low-drift biasing in high-impedance feedback networks and overvoltage clamp circuits requiring deterministic failure modes.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 130 V at IZT = 10 mA - defines regulated output voltage under standard test conditions |
| Power Dissipation | 5 W @ TEC = 140 °C - sets maximum continuous thermal load before derating begins |
| Dynamic Impedance (ZZ) | 190 Ω at IZT - determines regulation sensitivity to current variation in feedback loops |
| Max Reverse Leakage (IR) | 2 μA at VR = 104 V - ensures minimal error current in high-impedance reference paths |
| Temp Coefficient (αVZ) | +0.105 %/°C at IZT - quantifies voltage drift per degree Celsius in precision biasing |
| Forward Voltage (VF) | 1.50 V at IF = 1.0 A - specifies conduction loss during forward-bias fault conditions |
| Surge Current (IZSM) | 0.80 A at 8.3 ms - supports transient overvoltage clamping without degradation |
Pinout & Package
Package: Hermetically sealed voidless hard glass case with tungsten slugs; copper end caps with Sn/Pb finish; polarity indicated by cathode band; "E" package (also designated D-5B); weight 539 mg; EIA-481-B tape-and-reel compatible.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connects to lower-potential node in reverse-bias regulation; carries full surge current during clamping |
| Cathode | Reverse breakdown terminal | Marked with band; connects to regulated output node; establishes reference potential in shunt configuration |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion, enabling >20-year reliability in space-grade environments |
| Category I metallurgical bond | Ensures mechanical integrity under shock/vibration up to 500 g and thermal cycling from −65 °C to +175 °C |
| Nonsensitive to ESD | Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) ≥100 krad(Si), per MicroNote 050 |
| Triple-layer passivation | Reduces surface leakage and stabilizes Zener voltage under high-humidity and contamination exposure |
Applications
| Aerospace Power Bus Regulation | Radiation-Hardened Reference Source |
|---|---|
Use Scenario: Stabilizing 130 V intermediate bus in satellite power distribution units exposed to vacuum and thermal extremes. IC Role / Device Role / Timing Role: Shunt Zener regulator maintaining precise voltage setpoint despite input ripple and load transients. Use Value: Eliminates need for active regulators in high-radiation zones where CMOS-based ICs degrade, leveraging inherent radiation tolerance. |
Use Scenario: Providing stable 130 V reference for analog-to-digital converter biasing in nuclear instrumentation systems. IC Role / Device Role / Timing Role: Passive voltage reference establishing known threshold for comparator trip points and DAC calibration. Use Value: Delivers <2 μA leakage at 104 V, minimizing offset error in high-impedance reference dividers. |
| Military Avionics Overvoltage Clamp | High-Temperature Industrial Sensor Excitation |
Use Scenario: Clamping transients on 115 VAC-derived DC rails in fighter jet flight control electronics. IC Role / Device Role / Timing Role: Fast-response surge suppressor absorbing 0.80 A 8.3 ms surges without parametric shift. Use Value: Survives repeated 130 V clamping events across −65 °C to +175 °C ambient without bond-wire fatigue. |
Use Scenario: Biasing high-temperature piezoresistive pressure sensors in downhole oil/gas drilling tools. IC Role / Device Role / Timing Role: Stable excitation source maintaining 130 V across wide temperature swings in sealed sensor housings. Use Value: +0.105 %/°C tempco enables predictable compensation algorithms versus silicon references with nonlinear drift. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4985US | Higher screening level (JANTXV vs JANTX); tighter lot traceability; same electrical specs and package | Required for Class V spaceflight hardware where single-event burnout (SEB) immunity validation is mandated | Select JANTXV1N4985US when mission-critical redundancy or extended radiation testing documentation is contractually required |
| 1N4985US | Commercial-grade version; no MIL-PRF-19500 qualification; identical Zener parameters and D-5B package | Suitable for non-military industrial prototypes or cost-sensitive ground-test fixtures | Choose 1N4985US for bench validation or non-flight subsystems where MIL-spec screening adds unnecessary cost |
Compared with JANTX1N4985US/TR, JANTXV1N4985US provides enhanced process controls and radiation assurance for orbital deployment, while 1N4985US offers identical regulation performance at lower acquisition cost for terrestrial development use.
Availability
JANTX1N4985US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, radiation-hardened reference design, and high-temperature industrial sensor excitation requiring stable component supply across extended product lifecycles.
Supply support for JANTX1N4985US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability semiconductor components for defense, aerospace, and industrial markets, emphasizing radiation tolerance, hermetic packaging, and MIL-spec compliance.
The JANTX1N4985US/TR belongs to Microsemi's legacy 1N49xxUS series of military-qualified Zener diodes, engineered specifically for voltage regulation in mission-critical systems where failure is not an option.
FAQ
What is the Zener voltage tolerance for JANTX1N4985US/TR?
JANTX1N4985US/TR has a nominal Zener voltage of 130 V with a standard tolerance of ±5%, consistent with MIL-PRF-19500/356 requirements for this part number. No suffix indicates the 5% grade; tighter tolerances (e.g., ±2% or ±1%) require different suffixes not present in JANTX1N4985US/TR.
Does JANTX1N4985US/TR require derating above 140 °C?
Yes - JANTX1N4985US/TR must be derated linearly above 140 °C end-cap temperature, reaching zero power dissipation at 175 °C. This reflects its 5 W rating at TEC = 140 °C and thermal resistance of 7 °C/W junction-to-end-cap, critical for thermal design in sealed avionics enclosures.
Is JANTX1N4985US/TR compatible with lead-free reflow processes?
No - JANTX1N4985US/TR features Sn/Pb terminations and is not qualified for Pb-free reflow. Its copper end caps with tin/lead finish require peak temperatures ≤235 °C and are incompatible with standard SAC305 profiles; use only with SnPb-compatible assembly lines.
What is the maximum reverse leakage current for JANTX1N4985US/TR?
JANTX1N4985US/TR specifies a maximum reverse leakage current (IR) of 2 μA at VR = 104 V and 25 °C. This value remains stable across its full operating temperature range and supports low-error biasing in high-impedance analog circuits.
Can JANTX1N4985US/TR be used as a surge protector?
JANTX1N4985US/TR supports nonrepetitive surge currents up to 0.80 A for 8.3 ms square-wave pulses, making it suitable for transient overvoltage clamping. However, it is not rated for repetitive surge duty; sustained overvoltage requires external current limiting to avoid exceeding IZM = 36.6 mA.
JANTX1N4985US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 130 V
- Tolerance:
- ±5%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 190 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 98.8 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTX1N4985US/TR FAQ
1.How can I place an order for JANTX1N4985US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N4985US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N4985US/TR reliable?
The price and inventory of JANTX1N4985US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N4985US/TR is usually 5 days.
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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N4985US/TR?
For technical support, including JANTX1N4985US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N4985US/TR requirements.
6.How does Aetrix verify that JANTX1N4985US/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N4985US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4985US/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N4985US/TR?
All JANTX1N4985US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4985US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N4985US/TR part is unused and in its original packaging.
Return procedure for JANTX1N4985US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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