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Microchip Technology JANTX1N4985US/TR

Part No.:
JANTX1N4985US/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTX1N4985US/TR.pdf
Description:
DIODE ZENER 130V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,108

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Product details

Overview

JANTX1N4985US/TR from Microsemi is a hermetically sealed, voidless-glass surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with nominal Zener voltage of 130 V at 10 mA test current, ±5% tolerance, and maximum dynamic impedance of 190 Ω at IZT - used in high-reliability voltage regulation for aerospace power conditioning and radiation-hardened analog reference circuits.

For engineers reviewing the JANTX1N4985US/TR datasheet, JANTX1N4985US/TR pinout, JANTX1N4985US/TR application, or JANTX1N4985US/TR equivalent, key selection criteria include military-grade hermeticity (MIL-PRF-19500/356), −65 °C to +175 °C operating junction temperature, 1.5 V forward voltage at 1.0 A, and compatibility with EIA-481-B tape-and-reel packaging for automated SMT assembly.

Technical Context

This device operates as a precision voltage reference in reverse-biased breakdown mode, delivering stable regulation across 10%–50% of its maximum Zener current (IZM = 36.6 mA) with ΔVZ ≤ 11 V. Its voidless glass construction and Category I metallurgical bond ensure long-term stability under thermal cycling and mechanical stress.

The JANTX1N4985US/TR exhibits a positive temperature coefficient of +0.105 %/°C at IZT and maintains ≤2 μA reverse leakage at VR = 104 V, supporting low-drift biasing in high-impedance feedback networks and overvoltage clamp circuits requiring deterministic failure modes.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 130 V at IZT = 10 mA - defines regulated output voltage under standard test conditions
Power Dissipation 5 W @ TEC = 140 °C - sets maximum continuous thermal load before derating begins
Dynamic Impedance (ZZ) 190 Ω at IZT - determines regulation sensitivity to current variation in feedback loops
Max Reverse Leakage (IR) 2 μA at VR = 104 V - ensures minimal error current in high-impedance reference paths
Temp Coefficient (αVZ) +0.105 %/°C at IZT - quantifies voltage drift per degree Celsius in precision biasing
Forward Voltage (VF) 1.50 V at IF = 1.0 A - specifies conduction loss during forward-bias fault conditions
Surge Current (IZSM) 0.80 A at 8.3 ms - supports transient overvoltage clamping without degradation

Pinout & Package

Package: Hermetically sealed voidless hard glass case with tungsten slugs; copper end caps with Sn/Pb finish; polarity indicated by cathode band; "E" package (also designated D-5B); weight 539 mg; EIA-481-B tape-and-reel compatible.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connects to lower-potential node in reverse-bias regulation; carries full surge current during clamping
Cathode Reverse breakdown terminal Marked with band; connects to regulated output node; establishes reference potential in shunt configuration

Key Features

Feature Design Value
Voidless hermetic glass seal Prevents moisture ingress and internal corrosion, enabling >20-year reliability in space-grade environments
Category I metallurgical bond Ensures mechanical integrity under shock/vibration up to 500 g and thermal cycling from −65 °C to +175 °C
Nonsensitive to ESD Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure
Radiation hardness Inherently tolerant to total ionizing dose (TID) ≥100 krad(Si), per MicroNote 050
Triple-layer passivation Reduces surface leakage and stabilizes Zener voltage under high-humidity and contamination exposure

Applications

Aerospace Power Bus Regulation Radiation-Hardened Reference Source

Use Scenario: Stabilizing 130 V intermediate bus in satellite power distribution units exposed to vacuum and thermal extremes.

IC Role / Device Role / Timing Role: Shunt Zener regulator maintaining precise voltage setpoint despite input ripple and load transients.

Use Value: Eliminates need for active regulators in high-radiation zones where CMOS-based ICs degrade, leveraging inherent radiation tolerance.

Use Scenario: Providing stable 130 V reference for analog-to-digital converter biasing in nuclear instrumentation systems.

IC Role / Device Role / Timing Role: Passive voltage reference establishing known threshold for comparator trip points and DAC calibration.

Use Value: Delivers <2 μA leakage at 104 V, minimizing offset error in high-impedance reference dividers.

Military Avionics Overvoltage Clamp High-Temperature Industrial Sensor Excitation

Use Scenario: Clamping transients on 115 VAC-derived DC rails in fighter jet flight control electronics.

IC Role / Device Role / Timing Role: Fast-response surge suppressor absorbing 0.80 A 8.3 ms surges without parametric shift.

Use Value: Survives repeated 130 V clamping events across −65 °C to +175 °C ambient without bond-wire fatigue.

Use Scenario: Biasing high-temperature piezoresistive pressure sensors in downhole oil/gas drilling tools.

IC Role / Device Role / Timing Role: Stable excitation source maintaining 130 V across wide temperature swings in sealed sensor housings.

Use Value: +0.105 %/°C tempco enables predictable compensation algorithms versus silicon references with nonlinear drift.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N4985US Higher screening level (JANTXV vs JANTX); tighter lot traceability; same electrical specs and package Required for Class V spaceflight hardware where single-event burnout (SEB) immunity validation is mandated Select JANTXV1N4985US when mission-critical redundancy or extended radiation testing documentation is contractually required
1N4985US Commercial-grade version; no MIL-PRF-19500 qualification; identical Zener parameters and D-5B package Suitable for non-military industrial prototypes or cost-sensitive ground-test fixtures Choose 1N4985US for bench validation or non-flight subsystems where MIL-spec screening adds unnecessary cost

Compared with JANTX1N4985US/TR, JANTXV1N4985US provides enhanced process controls and radiation assurance for orbital deployment, while 1N4985US offers identical regulation performance at lower acquisition cost for terrestrial development use.

Availability

JANTX1N4985US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, radiation-hardened reference design, and high-temperature industrial sensor excitation requiring stable component supply across extended product lifecycles.

Supply support for JANTX1N4985US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) designs high-reliability semiconductor components for defense, aerospace, and industrial markets, emphasizing radiation tolerance, hermetic packaging, and MIL-spec compliance.

The JANTX1N4985US/TR belongs to Microsemi's legacy 1N49xxUS series of military-qualified Zener diodes, engineered specifically for voltage regulation in mission-critical systems where failure is not an option.

FAQ

What is the Zener voltage tolerance for JANTX1N4985US/TR?

JANTX1N4985US/TR has a nominal Zener voltage of 130 V with a standard tolerance of ±5%, consistent with MIL-PRF-19500/356 requirements for this part number. No suffix indicates the 5% grade; tighter tolerances (e.g., ±2% or ±1%) require different suffixes not present in JANTX1N4985US/TR.

Does JANTX1N4985US/TR require derating above 140 °C?

Yes - JANTX1N4985US/TR must be derated linearly above 140 °C end-cap temperature, reaching zero power dissipation at 175 °C. This reflects its 5 W rating at TEC = 140 °C and thermal resistance of 7 °C/W junction-to-end-cap, critical for thermal design in sealed avionics enclosures.

Is JANTX1N4985US/TR compatible with lead-free reflow processes?

No - JANTX1N4985US/TR features Sn/Pb terminations and is not qualified for Pb-free reflow. Its copper end caps with tin/lead finish require peak temperatures ≤235 °C and are incompatible with standard SAC305 profiles; use only with SnPb-compatible assembly lines.

What is the maximum reverse leakage current for JANTX1N4985US/TR?

JANTX1N4985US/TR specifies a maximum reverse leakage current (IR) of 2 μA at VR = 104 V and 25 °C. This value remains stable across its full operating temperature range and supports low-error biasing in high-impedance analog circuits.

Can JANTX1N4985US/TR be used as a surge protector?

JANTX1N4985US/TR supports nonrepetitive surge currents up to 0.80 A for 8.3 ms square-wave pulses, making it suitable for transient overvoltage clamping. However, it is not rated for repetitive surge duty; sustained overvoltage requires external current limiting to avoid exceeding IZM = 36.6 mA.

JANTX1N4985US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
130 V
Tolerance:
±5%
Power - Max:
5 W
Impedance (Max) (Zzt):
190 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 98.8 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTX1N4985US/TR FAQ

1.How can I place an order for JANTX1N4985US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTX1N4985US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTX1N4985US/TR reliable?

The price and inventory of JANTX1N4985US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N4985US/TR is usually 5 days.

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JANTX1N4985US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTX1N4985US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTX1N4985US/TR?

For technical support, including JANTX1N4985US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N4985US/TR requirements.

6.How does Aetrix verify that JANTX1N4985US/TR is sourced from the original manufacturer or authorized distributors?

All JANTX1N4985US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4985US/TR meets industry standards.

7.What is the process for return or replacement of JANTX1N4985US/TR?

All JANTX1N4985US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4985US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTX1N4985US/TR part is unused and in its original packaging.

Return procedure for JANTX1N4985US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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