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Microchip Technology JANTX1N4993DUS/TR
- Part No.:
- JANTX1N4993DUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTX1N4993DUS/TR.pdf
- Description:
- DIODE ZENER 300V 5W E-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:9,358
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Product details
Overview
JANTX1N4993DUS/TR from Microsemi is a military-qualified, voidless hermetically sealed surface-mount 5 W Zener diode with nominal Zener voltage of 300 V, ±5% tolerance, 2 mA maximum reverse leakage at 240 V, and 15.6 mA maximum continuous Zener current. It operates from –65 °C to +175 °C and is used in high-reliability voltage regulation for aerospace power conditioning circuits.
For engineers reviewing the JANTX1N4993DUS/TR datasheet, JANTX1N4993DUS/TR pinout, JANTX1N4993DUS/TR application, or JANTX1N4993DUS/TR equivalent, this page delivers verified electrical parameters, thermal performance data, MIL-PRF-19500/356 qualification status, and direct alternative part comparisons for radiation-hardened, high-temperature analog design.
Technical Context
This device belongs to the 1N4954US–1N4996US family of glass-encapsulated Zener regulators qualified to MIL-PRF-19500/356 Class JANTX. It uses internal Category I metallurgical bonds and triple-layer passivation for enhanced reliability under thermal cycling and radiation exposure.
Its 300 V Zener voltage is stabilized across 10%–50% of IZM (15.6 mA), exhibiting ΔVZ ≤ 32 V per Note 1. The 7 °C/W junction-to-end-cap thermal resistance enables 5 W dissipation at TEC = 140 °C, with derating to zero at 175 °C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 300 V ±5% at 4 mA test current - defines precise regulation point for high-voltage reference and clamping. |
| Power Dissipation | 5 W @ TEC = 140 °C - supports stable operation in conduction-cooled military chassis without forced air. |
| Operating Temperature | –65 °C to +175 °C - enables deployment in engine bay, space payload, and downhole electronics. |
| Dynamic Impedance (ZZT) | 950 Ω at 4 mA - low impedance ensures minimal output voltage shift under load transients. |
| Reverse Leakage (IR) | 2 μA max at 240 V - guarantees negligible standby current in high-impedance bias networks. |
| Thermal Resistance (RθJC) | 7 °C/W junction-to-end-cap - allows accurate thermal modeling for PCB copper pour sizing. |
| Surge Current (IZSM) | 1.0 A @ 8.3 ms - withstands lightning-induced transients in avionics power input stages. |
Pinout & Package
Package: Hermetically sealed voidless hard glass case with tungsten slugs, "E" package (also designated D-5B), surface-mount, cathode indicated by band, end caps copper with Sn/Pb finish, weight 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current sink in forward bias; reference node in reverse breakdown | Connected to system ground or low-side return path; requires thermal anchoring via copper pour. |
| Cathode | Regulated output node in reverse breakdown | Connected to voltage rail being stabilized; band marking identifies this terminal for assembly verification. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates moisture ingress and internal delamination under 1000+ thermal cycles (–65 °C/+175 °C). |
| Category I metallurgical bond | Ensures mechanical integrity of die attach under shock/vibration per MIL-STD-883 Method 2002. |
| Nonsensitive to ESD | Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure. |
| Inherent radiation hardness | Qualified to 100 krad(Si) TID per MicroNote 050 - no derating required in LEO satellite power systems. |
| Tape & reel packaging | Complies with EIA-481-B - supports automated placement on high-reliability SMT lines. |
Applications
| Aerospace Power Conditioning | Downhole Instrumentation |
|---|---|
|
Use Scenario: Regulating auxiliary 300 V bus in satellite power distribution units during solar array overvoltage events. IC Role / Device Role / Timing Role: Voltage clamp and reference element in crowbar circuit protecting DC-DC converters. Use Value: Maintains regulation within ±5% across –65 °C to +175 °C, enabling uninterrupted operation during orbital thermal cycling. |
Use Scenario: Stabilizing bias voltage for piezoelectric sensor amplifiers in oil/gas well logging tools. IC Role / Device Role / Timing Role: High-voltage reference source for precision analog front-end gain control. Use Value: 2 μA max reverse leakage at 240 V prevents signal drift in ultra-high-impedance sensor interfaces. |
| Military Radar Transmitter Bias | Nuclear Facility Monitoring |
|
Use Scenario: Providing stable gate bias for GaN RF power amplifiers in airborne radar pulse modulators. IC Role / Device Role / Timing Role: Zener shunt regulator in high-dV/dt switching supply feedback loop. Use Value: 950 Ω dynamic impedance minimizes ripple coupling into amplifier bias rails during 100 ns pulse edges. |
Use Scenario: Clamping detector supply rails in gamma spectroscopy systems exposed to ionizing radiation. IC Role / Device Role / Timing Role: Radiation-hardened overvoltage protection element in front-end power stage. Use Value: Inherent TID hardness up to 100 krad(Si) eliminates need for shielding or derating in reactor containment zones. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4993US | Commercial-grade version; same Zener voltage, power rating, and package but not MIL-qualified. | Lacks JAN/JANTX screening, radiation hardness, and extended temperature validation. | Select JANTX1N4993DUS/TR when full MIL-PRF-19500/356 compliance and TID hardness are mandatory. |
| JANTXV1N4993DUS/TR | Higher screening level: includes burn-in, life test, and tighter parametric limits per MIL-PRF-19500/356 Class JANTXV. | Required for mission-critical flight hardware where zero-defect reliability is enforced. | Choose JANTXV variant only if program specifications require JANTXV-level testing beyond JANTX baseline. |
Compared with 1N4993US and JANTXV1N4993DUS/TR, JANTX1N4993DUS/TR delivers validated radiation hardness and extended temperature operation without JANTXV's added cost and lead time-making it optimal for high-reliability terrestrial and LEO applications.
Availability
JANTX1N4993DUS/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, downhole instrumentation, military radar transmitter bias, nuclear facility monitoring, and high-temperature industrial control requiring stable component supply across extended lifecycle programs.
Supply support for JANTX1N4993DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTX1N4993DUS/TR belongs to Microsemi's military-qualified Zener diode product line, engineered specifically for voltage regulation in extreme-environment systems where failure is not an option.
FAQ
What is the Zener voltage tolerance of JANTX1N4993DUS/TR?
JANTX1N4993DUS/TR has a nominal Zener voltage of 300 V with a standard tolerance of ±5%, as specified in the Microsemi SD44A datasheet. This tolerance applies at the test current of 4 mA and is guaranteed across the full operating temperature range of –65 °C to +175 °C. No suffix letter (e.g., 'C' or 'D') appears in the part number, confirming the 5% grade.
Is JANTX1N4993DUS/TR radiation hardened?
Yes, JANTX1N4993DUS/TR is inherently radiation hard per Microsemi MicroNote 050, qualified to 100 krad(Si) total ionizing dose (TID) without parameter degradation. This hardness stems from its voidless-glass hermetic construction and Category I metallurgical bond-not from post-fabrication processing-so no derating is required in LEO or terrestrial nuclear environments.
What is the maximum continuous Zener current for JANTX1N4993DUS/TR?
The maximum continuous Zener current (IZM) for JANTX1N4993DUS/TR is 15.6 mA at TEC = 140 °C, derived from its 5 W power rating and 300 V Zener voltage (IZM = PMAX/VZ). This value is confirmed in the Electrical Characteristics table on page 2 of the SD44A datasheet and accounts for linear derating to zero at 175 °C.
Does JANTX1N4993DUS/TR have a cathode band marking?
Yes, JANTX1N4993DUS/TR uses a visible cathode band on the glass body to identify polarity, consistent with JEDEC-standard marking for Zener diodes. The band denotes the cathode terminal, which must be connected to the higher-potential node in reverse-bias regulation applications. No alphanumeric marking is present per the "MARKING: None" specification.
What package type does JANTX1N4993DUS/TR use?
JANTX1N4993DUS/TR uses the "E" package (also designated D-5B), a surface-mount hermetically sealed voidless glass case with tungsten slugs and copper end caps finished with Sn/Pb. Its dimensions and pad layout are documented in the PACKAGE DIMENSIONS section of the SD44A datasheet, supporting reflow soldering per MIL-STD-202.
JANTX1N4993DUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 300 V
- Tolerance:
- ±1%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 950 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 228 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTX1N4993DUS/TR FAQ
1.How can I place an order for JANTX1N4993DUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTX1N4993DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTX1N4993DUS/TR reliable?
The price and inventory of JANTX1N4993DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTX1N4993DUS/TR is usually 5 days.
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Once your JANTX1N4993DUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTX1N4993DUS/TR?
For technical support, including JANTX1N4993DUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTX1N4993DUS/TR requirements.
6.How does Aetrix verify that JANTX1N4993DUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTX1N4993DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTX1N4993DUS/TR meets industry standards.
7.What is the process for return or replacement of JANTX1N4993DUS/TR?
All JANTX1N4993DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTX1N4993DUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTX1N4993DUS/TR part is unused and in its original packaging.
Return procedure for JANTX1N4993DUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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