Microchip Technology JANTXV1N4970DUS/TR
- Part No.:
- JANTXV1N4970DUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTXV1N4970DUS/TR.pdf
- Description:
- DIODE ZENER 33V 5W E-MELF
- Quantity:
- Payment:

- Shipping:

Inventory:8,007
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Product details
Overview
JANTXV1N4970DUS/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with nominal Zener voltage of 33 V ±5%, dynamic impedance of 10 Ω at 40 mA test current, and operating junction temperature range from –65 °C to +175 °C. It serves as a precision voltage reference and overvoltage clamp in high-reliability aerospace power conditioning circuits.
For engineers reviewing the JANTXV1N4970DUS/TR datasheet, JANTXV1N4970DUS/TR pinout, JANTXV1N4970DUS/TR application, or JANTXV1N4970DUS/TR equivalent, this part is selected for mission-critical voltage regulation where radiation hardness, ESD immunity per MIL-STD-750 Method 1020, and long-term parametric stability under thermal cycling are mandatory design requirements.
Technical Context
This device belongs to the 1N4954US–1N4996US family, qualified to MIL-PRF-19500/356 at JANTXV level, featuring voidless-glass hermetic sealing with internal Category I metallurgical bonds and triple-layer passivation. Its Zener breakdown mechanism delivers stable regulation across 10%–50% of IZM (5 A), with voltage change ΔVZ ≤ 2.8 V under that current range.
The "DUS" suffix denotes surface-mount D-5B (E) package with copper end caps and Sn/Pb finish; polarity is marked by cathode band. Thermal resistance is 7 °C/W junction-to-end-cap, enabling reliable operation at 175 °C junction temperature when mounted on thermally optimized PCBs.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage VZ | 33 V ±5% at 40 mA - defines regulated output voltage with tolerance suitable for MIL-SPEC power rail clamping |
| Power Dissipation | 5 W @ TEC = 140 °C - maximum continuous power handling before thermal derating begins |
| Dynamic Impedance ZZ | 10 Ω @ IZT = 40 mA - low AC impedance ensures minimal output voltage variation under load transients |
| Max Reverse Leakage IR | 2 μA @ VR = 25.1 V - confirms tight leakage control critical for low-power standby circuits |
| Temp Coefficient αVZ | +0.095 %/°C - positive TC enables predictable drift compensation in multi-Zener reference networks |
| Surge Current IZSM | 5 A @ 8.3 ms - supports transient overvoltage suppression without failure in avionics surge environments |
| Junction Temp Range | –65 °C to +175 °C - validated operation across full military temperature extremes without parameter shift |
Pinout & Package
Package: Hermetically sealed voidless glass "E" package (also designated D-5B), with copper end caps and Sn/Pb termination finish. Cathode indicated by band. Weight: 539 mg. Tape-and-reel compliant per EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential node during regulation; must handle 1.5 V forward drop at 1 A |
| Cathode | Zener breakdown terminal | Connected to higher-potential node; carries full Zener current and defines regulated voltage reference point |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration, ensuring >20-year parametric stability in vacuum/space environments |
| Category I metallurgical bond | Prevents interfacial delamination under mechanical shock and thermal cycling up to 1000 cycles |
| Nonsensitive to ESD | Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure |
| Inherent radiation hardness | Qualified to 100 krad(Si) total ionizing dose per MicroNote 050, no shielding required |
| Triple-layer passivation | Blocks sodium ion contamination and prevents surface leakage path formation in humid/harsh atmospheres |
Applications
| Avionics Power Bus Clamp | Satellite DC-DC Reference |
|---|---|
Use Scenario: Clamping 28 V aircraft bus against load dump transients exceeding 100 V peak. IC Role / Device Role / Timing Role: Zener diode acting as shunt overvoltage protector in parallel with primary regulator. Use Value: Withstands 5 A surge for 8.3 ms and maintains 33 V clamping within ±5% across –65 °C to +175 °C, preventing downstream converter damage. |
Use Scenario: Providing stable 33 V reference for isolated feedback loop in radiation-hardened DC-DC converter. IC Role / Device Role / Timing Role: Precision voltage reference element in optocoupler feedback network. Use Value: <0.095 %/°C tempco and <10 Ω dynamic impedance ensure <0.5% reference drift over full mission temperature profile. |
| Military Radar Bias Supply | Spacecraft Battery Monitor |
Use Scenario: Regulating bias voltage for GaN RF amplifier stages in ground-based radar transmitters. IC Role / Device Role / Timing Role: High-stability Zener reference supplying gate bias for Class AB amplifiers. Use Value: Hermetic glass construction prevents parameter drift under high-humidity coastal deployment; 175 °C rating supports conduction-cooled chassis mounting. |
Use Scenario: Monitoring Li-ion battery pack voltage in deep-space probe telemetry system. IC Role / Device Role / Timing Role: Overvoltage detection element triggering safe-mode shutdown at 33 V threshold. Use Value: Radiation hardness eliminates need for redundant sensing; 2 μA leakage at 25.1 V ensures negligible drain on dormant battery during 10-year mission. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4970US | No TR suffix; bulk packaging instead of tape-and-reel; identical electrical specs and qualification | Preferred for manual prototyping or low-volume hand-soldered assemblies | Select JANTXV1N4970US when automated pick-and-place is not required and cost-per-unit is prioritized |
| 1N4970US | Commercial-grade (non-military) version; same Zener voltage and package but only qualified to JANS-level screening, not JANTXV | Acceptable for non-safety-critical industrial controls where radiation hardness and extended temp range are not mandated | Choose 1N4970US only if MIL-PRF-19500/356 compliance and 175 °C operation are not required |
Compared with JANTXV1N4970US and 1N4970US, the JANTXV1N4970DUS/TR provides guaranteed tape-and-reel delivery for SMT production lines while retaining full JANTXV qualification-enabling direct integration into high-reliability automated assembly without requalification.
Availability
JANTXV1N4970DUS/TR is available at Aetrix Electronics and suitable for avionics power bus clamp, satellite DC-DC reference, and military radar bias supply requiring stable component supply under extended temperature and radiation exposure conditions.
Supply support for JANTXV1N4970DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and hermetically sealed components.
The JANTXV1N4970DUS/TR belongs to Microsemi's military-qualified Zener diode product line, engineered specifically for voltage regulation in mission-critical systems where failure is not an option-including launch vehicles, satellites, and tactical communications equipment.
FAQ
What is the Zener voltage tolerance for JANTXV1N4970DUS/TR?
The JANTXV1N4970DUS/TR has a nominal Zener voltage of 33 V with a standard tolerance of ±5%, as specified in the Microsemi SD44A datasheet. This tolerance applies at 40 mA test current and 25 °C ambient, and remains valid across the full –65 °C to +175 °C operating junction temperature range due to its controlled temperature coefficient of +0.095 %/°C.
Is JANTXV1N4970DUS/TR compatible with lead-free soldering processes?
JANTXV1N4970DUS/TR uses Sn/Pb finish on its copper end caps and is qualified for reflow profiles up to 225 °C peak temperature. While it is not lead-free, its Sn/Pb termination is compatible with standard eutectic soldering and meets MIL-PRF-19500/356 process requirements. Lead-free assembly requires process validation per J-STD-020.
Does JANTXV1N4970DUS/TR require derating above 140 °C end-cap temperature?
Yes. The JANTXV1N4970DUS/TR is rated for 5 W power dissipation only at TEC = 140 °C. Above that temperature, power must be linearly derated to zero at 175 °C, yielding a derating slope of 0.143 W/°C. This reflects its 7 °C/W junction-to-end-cap thermal resistance and must be accounted for in thermal design.
What is the maximum reverse leakage current for JANTXV1N4970DUS/TR?
The maximum reverse leakage current for JANTXV1N4970DUS/TR is 2 μA at VR = 25.1 V and 25 °C, as stated in the Electrical Characteristics table. This value is guaranteed across the full military temperature range and supports ultra-low-power monitoring applications such as spacecraft battery health sensing.
How is polarity identified on JANTXV1N4970DUS/TR?
Polarity on JANTXV1N4970DUS/TR is indicated by a visible cathode band on the glass body. The banded end is the cathode terminal, which must be connected to the higher-potential node in Zener regulation configuration. No marking appears on the anode end, and the device is unidirectional-forward conduction occurs only when anode is biased positive relative to cathode.
JANTXV1N4970DUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 33 V
- Tolerance:
- ±1%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 10 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 25.1 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTXV1N4970DUS/TR FAQ
1.How can I place an order for JANTXV1N4970DUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N4970DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
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The price and inventory of JANTXV1N4970DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4970DUS/TR is usually 5 days.
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6.How does Aetrix verify that JANTXV1N4970DUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N4970DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4970DUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N4970DUS/TR?
All JANTXV1N4970DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4970DUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N4970DUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N4970DUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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