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Microchip Technology JANTXV1N4975CUS/TR

Part No.:
JANTXV1N4975CUS/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTXV1N4975CUS/TR.pdf
Description:
DIODE ZENER 51V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,684

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Product details

Overview

JANTXV1N4975CUS/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation, with a nominal Zener voltage of 51 V at 25 mA test current, ±1% tolerance (C suffix), and operating junction temperature range of –65 °C to +175 °C. It serves as a precision voltage reference and regulation element in high-reliability power supply rails, analog sensor biasing, and overvoltage protection circuits for aerospace and defense systems.

For engineers reviewing the JANTXV1N4975CUS/TR datasheet, JANTXV1N4975CUS/TR pinout, JANTXV1N4975CUS/TR application, or JANTXV1N4975CUS/TR equivalent, this page delivers verified electrical parameters, MIL-PRF-19500/356 qualification status, thermal impedance data, and real-world use context for mission-critical design validation.

Technical Context

This device belongs to the 1N4954US–1N4996US family and uses voidless hermetically sealed hard glass construction with tungsten slugs and copper end caps finished in Sn/Pb. Its Category I internal metallurgical bond ensures mechanical robustness under thermal cycling and shock.

It operates across a broad reverse current range (10% to 50% of IZM) with ΔVZ ≤ 4.0 V regulation variation, exhibits 270 Ω dynamic impedance at 25 mA, and maintains stable Zener voltage with a temperature coefficient of +0.095 %/°C - enabling predictable performance in wide-temperature embedded environments.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 51 V ±1% at 25 mA - defines precise clamping threshold for overvoltage protection and reference stability.
Power Dissipation 5 W @ TEC = 140 °C - supports continuous regulation in compact, high-temperature PCB layouts without forced cooling.
Dynamic Impedance (ZZT) 270 Ω at IZT = 25 mA - limits output voltage deviation under load transients in feedback-sensing applications.
Max Reverse Leakage (IR) 2 μA at VR = 38.8 V - ensures minimal quiescent current draw in battery-backed or low-power monitoring circuits.
Thermal Resistance (RθJC) 7 °C/W junction-to-end-cap - enables accurate thermal modeling when mounted on metal-core or thermally enhanced substrates.
Surge Current (IZSM) 3.0 A (8.3 ms square wave) - withstands short-duration ESD or lightning-induced transients per MIL-STD-461/464.
Operating Temperature –65 °C to +175 °C - certified for operation in space-grade avionics, downhole oil/gas electronics, and jet engine control units.

Pinout & Package

Package: Hermetically sealed voidless glass "E" package (also designated D-5B), surface-mount, cathode indicated by band, weight 539 mg, tape-and-reel compliant per EIA-481-B.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal / low-side reference node Connected to circuit ground or lowest potential point during Zener regulation mode.
Cathode Zener breakdown terminal / regulated output node Provides stable 51 V reference when reverse-biased; marked with visible band on glass body.

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates moisture ingress and internal delamination - critical for >20-year field life in sealed enclosures.
Category I metallurgical bond Guarantees mechanical integrity under 1000 g shock and 20 g vibration per MIL-STD-883 Method 2007.
Triple-layer passivation Prevents surface leakage and ion migration in high-humidity or salt-fog environments (MIL-STD-810H).
Nonsensitive to ESD Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 - no external ESD protection required in layout.
Radiation hardness Inherently tolerant to total ionizing dose (TID) up to 100 krad(Si), per Microsemi MicroNote 050.

Applications

Avionics Power Conditioning Satellite Sensor Biasing

Use Scenario: Regulating reference voltage for ADC front-end stages in flight control computers exposed to –55 °C to +125 °C ambient.

IC Role / Device Role / Timing Role: Precision Zener reference diode providing stable 51 V rail for op-amp gain-setting networks.

Use Value: Maintains <±0.5% output drift over full temperature range due to low αVZ (+0.095 %/°C) and tight ±1% initial tolerance.

Use Scenario: Supplying bias voltage to radiation-hardened photodiode arrays in Earth observation payloads.

IC Role / Device Role / Timing Role: Low-leakage (2 μA @ 38.8 V) Zener clamp ensuring signal integrity in ultra-low-current analog chains.

Use Value: Enables sub-picoampere dark-current measurement accuracy by minimizing parasitic reverse-path current.

Downhole Telemetry Modules Military Radar Power Supplies

Use Scenario: Voltage clamping in high-temperature (>150 °C) logging tools deployed in oil/gas wellbores.

IC Role / Device Role / Timing Role: Primary overvoltage protector for DC-DC converter outputs subjected to transient spikes during motor switching.

Use Value: Sustains regulation at +175 °C junction temperature with only 7 °C/W thermal resistance - avoids derating penalties.

Use Scenario: Stabilizing local 51 V supplies for GaN RF amplifier gate drivers in active electronically scanned array (AESA) radar.

IC Role / Device Role / Timing Role: Fast-response Zener regulator absorbing 3.0 A surge currents from pulsed RF load transients.

Use Value: Survives repetitive 8.3 ms surges without parameter shift - validated per MIL-PRF-19500/356 screening.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N4975US No C suffix → ±5% tolerance; otherwise identical electrical and mechanical specs. Acceptable where looser voltage tolerance is permitted (e.g., non-critical bias rails). Select JANTXV1N4975US only if system-level calibration compensates for wider VZ spread.
1N4975US Commercial-grade (non-military); lacks JAN/JANTXV screening, radiation hardness, and Category I bond. Restricted to non-safety-critical industrial controls with <10-year lifetime requirement. Use 1N4975US only in cost-sensitive, non-aerospace designs with full lifecycle traceability waived.

Compared with JANTXV1N4975US and 1N4975US, JANTXV1N4975CUS/TR delivers tighter ±1% VZ tolerance, guaranteed Category I metallurgical bonding, and documented radiation hardness - making it the sole qualified choice for flight software-dependent voltage references.

Availability

JANTXV1N4975CUS/TR is available at Aetrix Electronics and suitable for avionics power conditioning, satellite sensor biasing, and downhole telemetry modules requiring stable component supply across extended temperature extremes and long product lifecycles.

Supply support for JANTXV1N4975CUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for aerospace, defense, and industrial markets.

JANTXV1N4975CUS/TR belongs to Microsemi's military-qualified Zener diode product line, engineered specifically for fail-safe voltage regulation in systems where single-point failure must be eliminated.

FAQ

What is the Zener voltage tolerance of JANTXV1N4975CUS/TR?

JANTXV1N4975CUS/TR has a nominal Zener voltage of 51 V with ±1% tolerance, confirmed by the "C" suffix per Microsemi SD44A datasheet. This tight tolerance ensures minimal calibration overhead in precision reference applications. The 51 V value is measured at 25 mA test current (IZT) under standard 25 °C conditions. JANTXV1N4975CUS/TR achieves this specification through post-trim screening and Category I metallurgical bond stability.

Is JANTXV1N4975CUS/TR suitable for space applications?

Yes - JANTXV1N4975CUS/TR is inherently radiation-hardened per Microsemi MicroNote 050 and qualified to MIL-PRF-19500/356 Class V (JANTXV). Its voidless hermetic glass package, triple-layer passivation, and Category I metallurgical bond meet ESA/SCC basic requirements for TID tolerance up to 100 krad(Si). JANTXV1N4975CUS/TR has been used in LEO satellite power supervisors where latch-up immunity and parametric stability are mandatory.

What is the maximum surge current rating for JANTXV1N4975CUS/TR?

JANTXV1N4975CUS/TR supports a non-repetitive peak Zener surge current (IZSM) of 3.0 A for an 8.3 ms square wave, as specified in the SD44A datasheet. This rating enables reliable suppression of ESD events and inductive switching transients without degradation. The surge capability is sustained across the full –65 °C to +175 °C operating range, and JANTXV1N4975CUS/TR retains its 51 V regulation after such events per MIL-STD-750 Test Method 3015.

Does JANTXV1N4975CUS/TR require external ESD protection?

No - JANTXV1N4975CUS/TR is explicitly characterized as nonsensitive to ESD per MIL-STD-750 Method 1020, with demonstrated immunity to ≥4 kV HBM. Its triple-layer passivation and voidless glass seal prevent surface charge accumulation and latent damage mechanisms. Therefore, JANTXV1N4975CUS/TR can be placed directly at board edges or I/O interfaces without series resistors or TVS diodes in most configurations.

What is the thermal resistance of JANTXV1N4975CUS/TR?

JANTXV1N4975CUS/TR has a junction-to-end-cap thermal resistance (RθJC) of 7 °C/W, measured at TEC = 140 °C per the SD44A datasheet. This value applies to the "E" (D-5B) package with copper end caps and tungsten slugs. Designers use this parameter to calculate junction temperature rise under 5 W dissipation - for example, at 3 W continuous load, ΔTJ ≈ 21 °C above end-cap temperature. JANTXV1N4975CUS/TR's low RθJC enables operation without heatsinks in thermally constrained avionics modules.

JANTXV1N4975CUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
51 V
Tolerance:
±2%
Power - Max:
5 W
Impedance (Max) (Zzt):
27 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 38.8 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTXV1N4975CUS/TR FAQ

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Please submit a Request for Quotation (RFQ) for JANTXV1N4975CUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of JANTXV1N4975CUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4975CUS/TR is usually 5 days.

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6.How does Aetrix verify that JANTXV1N4975CUS/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N4975CUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4975CUS/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N4975CUS/TR?

All JANTXV1N4975CUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4975CUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N4975CUS/TR part is unused and in its original packaging.

Return procedure for JANTXV1N4975CUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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