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Microchip Technology JANTXV1N4975DUS/TR
- Part No.:
- JANTXV1N4975DUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTXV1N4975DUS/TR.pdf
- Description:
- DIODE ZENER 51V 5W E-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:2,943
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Product details
Overview
JANTXV1N4975DUS/TR from Microsemi is a military-grade, voidless-hermetically-sealed surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with a nominal Zener voltage of 51 V ±5%, dynamic impedance of 27 Ω at 25 mA test current, and operating junction temperature range of −65 °C to +175 °C. It serves as a precision voltage reference and overvoltage clamp in high-reliability aerospace power conditioning circuits.
For engineers reviewing the JANTXV1N4975DUS/TR datasheet, JANTXV1N4975DUS/TR pinout, JANTXV1N4975DUS/TR application, or JANTXV1N4975DUS/TR equivalent, key selection criteria include its MIL-PRF-19500/356 qualification, hermetic glass package with tungsten slugs, −65 °C to +175 °C operational envelope, and 51 V regulation stability across 10–50% of IZM (3 mA to 15 mA).
Technical Context
This device belongs to the 1N4954US–1N4996US family, fabricated using triple-layer passivation and Category I internal metallurgical bonds. Its Zener breakdown mechanism delivers stable regulation over wide current (3–15 mA) and temperature (−65 °C to +175 °C) ranges, with low temperature coefficient (+0.095 %/°C) and minimal voltage drift (ΔVZ ≤ 4.0 V between 10% and 50% IZM).
The "DUS/TR" suffix denotes D-5B (E) package, tape-and-reel packaging per EIA-481-B, and ±1% voltage tolerance (D suffix), confirmed by Microsemi SD44A Rev E documentation. It exhibits nonsensitive ESD behavior per MIL-STD-750 Method 1020 and inherent radiation hardness per MicroNote 050.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 51 V ±1% at IZT = 25 mA - enables precise 51 V rail clamping or reference generation in critical analog monitoring paths |
| Power Dissipation | 5 W @ TEC = 140 °C - supports sustained operation in conduction-cooled avionics enclosures without forced airflow |
| Dynamic Impedance (ZZ) | 27 Ω @ IZT = 25 mA - ensures <1.4 V output variation under 50 mA load transients within regulation band |
| Max Reverse Leakage (IR) | 2 μA @ VR = 40.8 V - guarantees negligible standby current draw in battery-backed systems |
| Temp Coefficient (αVZ) | +0.095 %/°C - contributes ≤±1.3 V drift over full −65 °C to +175 °C junction range |
| Surge Current (IZSM) | 3.0 A @ 8.3 ms - withstands lightning-induced transients per DO-160 Section 22 Level 3 |
| Forward Voltage (VF) | 1.50 V @ 1.0 A - allows use as polarity-protected rectifier in low-duty-cycle bias networks |
Pinout & Package
Package: Hermetically sealed voidless hard glass case with tungsten slugs, "E" outline (also designated D-5B), cathode indicated by band, copper end caps with Sn/Pb finish, weight 539 mg.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current entry terminal in forward bias; connected to system ground or low-side return path | Must be routed with ≥0.5 mm clearance to adjacent traces to prevent arcing at 51 V standoff |
| Cathode | Regulated output node in reverse bias; connects to voltage rail being stabilized | Banded end - requires unbroken solder fillet on both end caps to ensure thermal conduction to PCB copper pour |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass construction | Eliminates moisture ingress and long-term parameter drift in humid or vacuum environments (e.g., satellite payload bays) |
| Category I metallurgical bond | Ensures mechanical integrity under 20 g RMS vibration and thermal cycling from −65 °C to +175 °C |
| MIL-PRF-19500/356 qualification (JANTXV) | Validated screening includes burn-in, temperature cycling, and lot acceptance testing per military reliability standards |
| Nonsensitive ESD behavior | No damage observed per MIL-STD-750 Method 1020 - simplifies handling in Class 0 ESD areas without special protocols |
| Inherent radiation hardness | Functional up to 100 krad(Si) total ionizing dose - suitable for low-earth orbit missions without shielding overhead |
Applications
| Aerospace Power Bus Protection | Avionics Reference Voltage Source |
|---|---|
Use Scenario: Clamping transient spikes on 28 V DC aircraft bus during load dump or generator switching events. IC Role / Device Role / Timing Role: Zener diode acting as shunt overvoltage protector, clamping bus voltage to ≤51 V during 100 ms surges. Use Value: Prevents damage to downstream 28 V regulators and FPGAs by limiting peak voltage to safe margin below 55 V absolute maximum ratings. |
Use Scenario: Providing stable 51 V reference for analog-to-digital conversion of engine sensor signals in FADEC units. IC Role / Device Role / Timing Role: Precision voltage reference element in ratiometric measurement circuitry with low-drift op-amp buffer. Use Value: Enables ±0.5% full-scale accuracy over −55 °C to +125 °C ambient due to tight 1% tolerance and +0.095%/°C TC. |
| Satellite Payload Voltage Regulation | Tactical Radio RF Stage Biasing |
Use Scenario: Regulating bias voltage for CCD imaging sensors in low-orbit Earth observation satellites. IC Role / Device Role / Timing Role: Primary Zener regulator supplying 51 V bias to photodiode arrays, operating continuously in vacuum. Use Value: Hermetic voidless glass prevents outgassing contamination and maintains regulation stability after 10 years in orbit. |
Use Scenario: Establishing fixed gate bias for GaN HEMT amplifiers in manpack tactical radios exposed to desert thermal extremes. IC Role / Device Role / Timing Role: Temperature-stable Zener reference setting quiescent current in RF power amplifier stages. Use Value: Maintains amplifier linearity across −40 °C to +85 °C ambient via low TC and robust thermal resistance (7 °C/W junction-to-end-cap). |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| 1N4975US | Same 51 V ±5% tolerance, non-military grade, no MIL-PRF-19500 screening | Lacks burn-in, temperature cycling, and radiation hardness validation; unsuitable for flight hardware | Select only for ground-test fixtures or commercial prototypes where cost outweighs reliability requirements |
| JANTX1N4975DUS/TR | Identical electrical specs but JANTX (not JANTXV) screening level - lower temperature range (−65 °C to +150 °C) and no radiation hardness data | Acceptable for non-space, non-nuclear applications requiring extended temperature operation but not TID resilience | Choose when full JANTXV qualification is unnecessary and budget constraints apply |
Compared with JANTXV1N4975DUS/TR, the 1N4975US lacks military screening and environmental hardening, while JANTX1N4975DUS/TR omits radiation hardness assurance and reduces max junction temperature by 25 °C - making JANTXV1N4975DUS/TR the sole choice for space-qualified 51 V regulation.
Availability
JANTXV1N4975DUS/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, avionics reference voltage sourcing, satellite payload voltage regulation, and tactical radio RF stage biasing requiring stable component supply across extended temperature and radiation environments.
Supply support for JANTXV1N4975DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability semiconductor components for defense, aerospace, and industrial markets, with emphasis on radiation-hardened and mil-spec qualified devices.
The JANTXV1N4975DUS/TR belongs to Microsemi's legacy 1N49xxUS Zener series, engineered specifically for mission-critical voltage regulation in environments demanding hermetic sealing, extreme temperature operation, and immunity to radiation and mechanical stress.
FAQ
What is the Zener voltage tolerance and test condition for JANTXV1N4975DUS/TR?
JANTXV1N4975DUS/TR has a nominal Zener voltage of 51 V with ±1% tolerance, verified at IZT = 25 mA and TA = 25 °C. This tighter tolerance is denoted by the "D" suffix per Microsemi SD44A Rev E. The device maintains regulation within this band across its full operating temperature range and current window (3–15 mA), supporting precision reference applications where standard ±5% parts would introduce unacceptable error.
Is JANTXV1N4975DUS/TR compatible with lead-free reflow processes?
JANTXV1N4975DUS/TR features copper end caps with Sn/Pb finish, making it incompatible with Pb-free reflow profiles exceeding 220 °C peak temperature. Its specified thermal resistance (7 °C/W) and glass-body construction require controlled ramp rates (<3 °C/s) and soak times to avoid thermal shock cracking. For RoHS-compliant assembly, Microsemi recommends verifying compatibility with process validation per J-STD-020, or selecting alternate SnAgCu-compatible variants if available.
Does JANTXV1N4975DUS/TR meet MIL-PRF-19500/356 requirements?
Yes, JANTXV1N4975DUS/TR is fully qualified to MIL-PRF-19500/356 as a JANTXV-grade device. This includes compliance with Category I metallurgical bonding, voidless hermetic glass sealing, triple-layer passivation, and full military screening: steady-state life test, temperature cycling, and lot acceptance testing. Documentation is provided in Microsemi's SD44A Rev E datasheet and QPL listing under JAN/JANTX/JANTXV categories.
What is the maximum continuous Zener current (IZM) for JANTXV1N4975DUS/TR?
The maximum continuous Zener current IZM for JANTXV1N4975DUS/TR is 930 mA at TEC = 140 °C, derived from its 5 W power rating and 51 V nominal voltage (P = V × I). Derating is linear above 140 °C, reaching zero at 175 °C. At 25 °C ambient with adequate PCB copper pour, practical IZM remains ~750 mA to maintain junction temperature below 175 °C under worst-case conduction losses.
How does the temperature coefficient affect regulation accuracy of JANTXV1N4975DUS/TR?
JANTXV1N4975DUS/TR has a positive temperature coefficient of +0.095 %/°C, meaning its Zener voltage increases by ~48 mV per °C rise in junction temperature. Over its full −65 °C to +175 °C range, this produces a total shift of ~22.8 V - but since regulation occurs within a narrow current band (3–15 mA), actual system-level drift is constrained to ≤±1.3 V in typical mounted configurations with thermal coupling to PCB. This is validated in Microsemi's ΔVZ specification (≤4.0 V between 10% and 50% IZM).
JANTXV1N4975DUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 51 V
- Tolerance:
- ±1%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 27 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 38.8 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTXV1N4975DUS/TR FAQ
1.How can I place an order for JANTXV1N4975DUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N4975DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N4975DUS/TR reliable?
The price and inventory of JANTXV1N4975DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4975DUS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N4975DUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N4975DUS/TR transactions.
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4.How is shipping managed for JANTXV1N4975DUS/TR?
JANTXV1N4975DUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N4975DUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N4975DUS/TR?
For technical support, including JANTXV1N4975DUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N4975DUS/TR requirements.
6.How does Aetrix verify that JANTXV1N4975DUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N4975DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4975DUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N4975DUS/TR?
All JANTXV1N4975DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4975DUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N4975DUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N4975DUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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