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Microchip Technology JANTXV1N4976DUS/TR

Part No.:
JANTXV1N4976DUS/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTXV1N4976DUS/TR.pdf
Description:
DIODE ZENER 56V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,479

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Product details

Overview

JANTXV1N4976DUS/TR from Microsemi is a military-grade, voidless-hermetically-sealed surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with nominal Zener voltage of 56 V ±1% (D suffix), dynamic impedance of 35 Ω at 25 mA test current, and operating junction temperature range from –65 °C to +175 °C. It serves as a precision voltage reference and overvoltage clamp in high-reliability aerospace power conditioning circuits.

For engineers reviewing the JANTXV1N4976DUS/TR datasheet, JANTXV1N4976DUS/TR pinout, JANTXV1N4976DUS/TR application, or JANTXV1N4976DUS/TR equivalent, key selection criteria include its MIL-PRF-19500/356 qualification, hermetic glass package with tungsten slugs, Category I metallurgical bond, radiation-hardened construction per MicroNote 050, and ESD immunity per MIL-STD-750 Method 1020.

Technical Context

This device operates in reverse breakdown mode with tightly controlled Zener voltage regulation across wide current (10%–50% of IZM) and temperature ranges. Its low dynamic impedance (35 Ω @ 25 mA) and minimal voltage drift (±0.095%/°C) ensure stable reference performance under varying load and thermal conditions.

The "D" suffix denotes ±1% Zener voltage tolerance at 25 °C, achieved via post-trim screening. The "JANTXV" prefix confirms compliance with enhanced screening levels including burn-in, temperature cycling, and life testing per MIL-PRF-19500/356, distinguishing it from commercial or lower-grade military variants.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 56 V ±1% at IZT = 25 mA - enables precise voltage clamping or reference generation in regulated supplies.
Power Dissipation 5 W @ TEC = 140 °C - supports robust operation in high-temperature avionics environments without derating until 175 °C.
Dynamic Impedance (ZZ) 35 Ω @ IZT = 25 mA - ensures minimal output voltage variation under dynamic load transients.
Max Reverse Leakage (IR) 2 μA @ VR = 42.6 V - guarantees low standby power loss and high signal integrity in sensing paths.
Thermal Resistance (RθJC) 7 °C/W junction-to-end-cap - allows efficient heat transfer to PCB copper or heatsink via end-cap soldering.
Operating Temperature –65 °C to +175 °C - validated for extreme-environment deployment in space, missile, and downhole systems.
Surge Current (IZSM) 2.8 A @ 8.3 ms - withstands transient overvoltage events such as lightning-induced spikes or inductive kickback.

Pinout & Package

Package: Hermetically sealed voidless hard-glass case with tungsten slugs and copper end caps (Sn/Pb finish), designated "E" or "D-5B", surface-mountable with center adhesive option per Microsemi SD44A.

Pin/Terminal Circuit Role Design Meaning
Cathode (banded end) Breakdown terminal Connected to regulated output node; polarity marking essential for correct orientation during placement.
Anode Reference terminal Typically tied to system ground or return path; forms the low-impedance reference point for voltage regulation.

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates internal moisture and contaminants, ensuring long-term parameter stability in vacuum or humid environments.
Category I metallurgical bond Provides mechanical and thermal reliability exceeding MIL-PRF-19500/356 requirements for high-shock applications.
Triple-layer passivation Prevents surface leakage and corrosion, maintaining low IR even after prolonged exposure to harsh atmospheres.
Nonsensitive to ESD Withstands >8 kV HBM per MIL-STD-750 Method 1020 - reduces handling risk during assembly and field maintenance.
Inherent radiation hardness Validated per Microsemi MicroNote 050 - suitable for low-dose-rate space missions without additional shielding.

Applications

Aerospace Power Bus Protection High-Temperature Downhole Sensors

Use Scenario: Clamping transient overvoltages on 28 V DC aircraft bus during load dump or generator fault events.

IC Role / Device Role / Timing Role: Zener diode acting as shunt regulator and crowbar element in primary power distribution.

Use Value: Withstands 2.8 A surge for 8.3 ms and maintains 56 V clamping accuracy within ±1%, preventing downstream converter damage.

Use Scenario: Providing stable 56 V reference for pressure transducer excitation in oil-well logging tools operating at 175 °C.

IC Role / Device Role / Timing Role: Precision voltage reference source in analog front-end signal conditioning circuitry.

Use Value: Delivers <2 μA leakage at 42.6 V and ±0.095%/°C tempco - enabling sub-0.5% total error over full temperature range.

Military Radar Bias Supply Satellite Payload Voltage Reference

Use Scenario: Regulating bias voltage for GaN RF power amplifier stages in airborne radar transceivers.

IC Role / Device Role / Timing Role: High-stability Zener reference in low-noise LDO feedback network.

Use Value: 35 Ω dynamic impedance minimizes noise coupling into sensitive RF bias lines, preserving amplifier linearity.

Use Scenario: Generating mission-critical 56 V reference for ADC calibration in Earth observation satellite imaging subsystems.

IC Role / Device Role / Timing Role: Radiation-hardened voltage reference for metrology-grade data acquisition.

Use Value: Inherent TID tolerance and <0.001%/hr parametric drift support 15-year orbital lifetime without recalibration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N4975US/TR 51 V ±1% (D suffix), 27 Ω ZZ @ 25 mA, 3.0 V forward drop Lower clamping voltage; better suited for 48 V telecom systems than 56 V aerospace rails Select when system nominal voltage is ≤50 V and tighter low-current regulation is required.
JANTXV1N4977US/TR 62 V ±1% (D suffix), 42 Ω ZZ @ 20 mA, 5.0 V forward drop Higher clamping threshold; optimized for 60 V hybrid vehicle battery monitoring Choose for 60 V nominal systems requiring margin above 56 V rail, accepting higher ZZ.

Compared with JANTXV1N4975US/TR and JANTXV1N4977US/TR, JANTXV1N4976DUS/TR provides optimal voltage alignment for legacy 56 V avionics buses, balanced dynamic impedance, and proven performance in MIL-PRF-19500/356 Class V screening.

Availability

JANTXV1N4976DUS/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, downhole sensor excitation, and military radar bias supply requiring stable component supply with full traceability and extended lifecycle support.

Supply support for JANTXV1N4976DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, with emphasis on radiation-hardened, hermetic, and high-temperature solutions.

The JANTXV1N4976DUS/TR belongs to Microsemi's military-qualified Zener diode family engineered specifically for fail-safe voltage regulation in mission-critical systems where parameter stability and long-term reliability are non-negotiable.

FAQ

What is the Zener voltage tolerance of JANTXV1N4976DUS/TR?

JANTXV1N4976DUS/TR has a Zener voltage tolerance of ±1% at 25 °C, indicated by the "D" suffix in the part number. This tight tolerance is achieved through post-trim screening and verified per MIL-PRF-19500/356 test requirements, making JANTXV1N4976DUS/TR suitable for precision reference applications where voltage accuracy is critical.

Does JANTXV1N4976DUS/TR require heatsinking in a 5 W application?

JANTXV1N4976DUS/TR is rated for 5 W dissipation at an end-cap temperature (TEC) of 140 °C, with a thermal resistance of 7 °C/W junction-to-end-cap. Effective heatsinking via copper pour or thermal vias is required to maintain TEC ≤140 °C under full load; without it, power must be linearly derated above that temperature to avoid exceeding the 175 °C max junction limit.

Is JANTXV1N4976DUS/TR compatible with lead-free reflow processes?

JANTXV1N4976DUS/TR features Sn/Pb-finished copper end caps and is qualified for traditional eutectic solder reflow only. It is not rated for lead-free (Pb-free) reflow profiles due to thermal stress risks on the hermetic glass seal and metallurgical bond. For Pb-free assembly, consult Microchip's obsolescence notice and approved alternatives before design-in.

What does the "JANTXV" prefix signify for JANTXV1N4976DUS/TR?

The "JANTXV" prefix certifies that JANTXV1N4976DUS/TR meets the highest screening level defined in MIL-PRF-19500/356, including extended burn-in, temperature cycling, and life testing. It also confirms compliance with radiation hardness guidelines in Microsemi MicroNote 050 and ESD immunity per MIL-STD-750 Method 1020 - all documented in the official JANTXV1N4976DUS/TR qualification report.

Can JANTXV1N4976DUS/TR replace JANTX1N4976US/TR in existing designs?

JANTXV1N4976DUS/TR offers tighter ±1% voltage tolerance (vs. ±5% for JANTX1N4976US/TR) and enhanced screening, but shares identical package, pinout, and absolute maximum ratings. Replacement is permissible if the design benefits from improved voltage accuracy and reliability - however, revalidation of surge response and thermal performance is recommended due to the D-suffix's tighter binning and screening.

JANTXV1N4976DUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
56 V
Tolerance:
±1%
Power - Max:
5 W
Impedance (Max) (Zzt):
35 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 42.6 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTXV1N4976DUS/TR FAQ

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The price and inventory of JANTXV1N4976DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4976DUS/TR is usually 5 days.

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For technical support, including JANTXV1N4976DUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N4976DUS/TR requirements.

6.How does Aetrix verify that JANTXV1N4976DUS/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N4976DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4976DUS/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N4976DUS/TR?

All JANTXV1N4976DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4976DUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N4976DUS/TR part is unused and in its original packaging.

Return procedure for JANTXV1N4976DUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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