Microchip Technology JANTXV1N4983DUS/TR
- Part No.:
- JANTXV1N4983DUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTXV1N4983DUS/TR.pdf
- Description:
- DIODE ZENER 110V 5W E-MELF
- Quantity:
- Payment:

- Shipping:

Inventory:2,405
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Product details
Overview
JANTXV1N4983DUS/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with nominal Zener voltage of 110 V ±5%, dynamic impedance of 125 Ω at 12 mA test current, and operating junction temperature range from –65 °C to +175 °C. It serves as a precision voltage reference and overvoltage clamp in high-reliability power regulation circuits for aerospace and defense systems.
For engineers reviewing the JANTXV1N4983DUS/TR datasheet, JANTXV1N4983DUS/TR pinout, JANTXV1N4983DUS/TR application, or JANTXV1N4983DUS/TR equivalent, key selection criteria include its voidless-glass hermetic package, Category I metallurgical bond, radiation-hardened construction per MicroNote 050, and compliance with MIL-PRF-19500/356 Class V screening.
Technical Context
This device operates in reverse-bias breakdown mode to maintain stable voltage across wide current (10%–50% of IZM) and temperature ranges. Its Zener voltage exhibits a temperature coefficient of +0.100 %/°C and is specified with ΔVZ ≤ 9.0 V between 10% and 50% of maximum Zener current (IZM = 1.2 A).
The "E" package (D-5B) uses tungsten slugs and copper end caps with Sn/Pb finish, enabling direct solder attachment without adhesive. Thermal resistance is 7 °C/W junction-to-end-cap, supporting reliable 5 W operation under controlled thermal management.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 110 V ±5% at IZT = 12 mA - defines regulated output voltage under nominal bias |
| Power Dissipation | 5 W @ TEC = 140 °C - maximum continuous power before thermal derating begins |
| Dynamic Impedance (ZZ) | 125 Ω @ IZT = 12 mA - low AC impedance ensures minimal voltage variation under load transients |
| Max Reverse Leakage (IR) | 2 μA @ VR = 83.6 V - confirms tight leakage control near 76% of VZ, critical for low-power bias networks |
| Temp Coefficient (αVZ) | +0.100 %/°C @ IZT - positive drift enables predictable compensation in temperature-stable references |
| Surge Current (IZSM) | 1.2 A @ 8.3 ms - supports transient overvoltage clamping without degradation |
| Junction Temp Range | –65 °C to +175 °C - enables operation in extreme environments including space and engine bays |
Pinout & Package
Package: Hermetically sealed voidless glass "E" package (also designated D-5B), with tungsten slugs and copper end caps finished in Sn/Pb. Cathode indicated by band. Weight: 539 mg. Tape-and-reel compliant per EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal / low-side reference node | Connected to circuit ground or lowest potential point in shunt regulator topology |
| Cathode | Zener breakdown terminal / regulated output node | Connected to input supply rail; maintains stable 110 V relative to anode during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and contaminants, ensuring long-term parameter stability in vacuum or humid environments |
| Category I metallurgical bond | Guarantees mechanical integrity and thermal cycling reliability per MIL-PRF-19500/356 |
| Radiation hardness | Inherent tolerance to total ionizing dose (TID), validated per Microsemi MicroNote 050 for space applications |
| Nonsensitive to ESD | Withstands >4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure |
| Triple-layer passivation | Prevents surface leakage and corrosion on glass body, maintaining IR specification over lifetime |
Applications
| Aerospace Power Bus Protection | Defense System Voltage Reference |
|---|---|
Use Scenario: Clamp transient spikes on 100 V DC distribution buses in satellite power subsystems. IC Role / Device Role / Timing Role: Shunt Zener regulator acting as primary overvoltage protection element. Use Value: Maintains bus integrity within ±5% tolerance across –65 °C to +125 °C operational range without parameter drift. |
Use Scenario: Provide stable 110 V reference for analog-to-digital conversion in radar receiver front-ends. IC Role / Device Role / Timing Role: Precision voltage reference source for ADC biasing and calibration. Use Value: Enables <1 LSB error contribution due to <125 Ω dynamic impedance and +0.100 %/°C tempco. |
| Avionics Sensor Excitation | Tactical Radio RF Stage Bias |
Use Scenario: Excite high-impedance piezoresistive pressure sensors in flight control units. IC Role / Device Role / Timing Role: Constant-voltage excitation source with low noise and high PSRR. Use Value: Delivers stable 110 V with <2 μA leakage, minimizing sensor offset drift and measurement uncertainty. |
Use Scenario: Set gate bias for GaN RF power amplifiers in manpack radios operating at elevated ambient temperatures. IC Role / Device Role / Timing Role: High-temperature-stable Zener bias generator. Use Value: Sustains regulation up to +175 °C junction temperature, eliminating need for active thermal compensation. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4983US | No TR suffix; bulk packaging instead of tape-and-reel; identical electrical specs and screening | Preferred for manual prototyping or low-volume hand-soldered assemblies | Select JANTXV1N4983US when automated pick-and-place is not required and inventory control favors loose components |
| 1N4983US | Commercial-grade (non-military) version; lacks JAN/JANTXV screening, radiation hardening, and Category I bond validation | Suitable only for non-critical industrial applications with ambient temperatures <125 °C | Choose 1N4983US only if MIL-PRF-19500/356 compliance, extended temperature operation, or radiation tolerance are not required |
Compared with JANTXV1N4983DUS/TR, JANTXV1N4983US offers identical performance in tape-and-reel form factor but requires alternate logistics handling, while 1N4983US sacrifices military reliability attributes for cost reduction in benign environments.
Availability
JANTXV1N4983DUS/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, defense system voltage reference, and avionics sensor excitation requiring stable component supply under extended temperature and radiation-exposed conditions.
Supply support for JANTXV1N4983DUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets.
The JANTXV1N4983DUS/TR belongs to Microsemi's military-qualified Zener diode family engineered for fail-safe voltage regulation in mission-critical systems where parameter stability under extreme thermal, radiation, and mechanical stress is mandatory.
FAQ
What is the Zener voltage tolerance and test current for JANTXV1N4983DUS/TR?
JANTXV1N4983DUS/TR has a nominal Zener voltage of 110 V with ±5% tolerance, measured at a test current (IZT) of 12 mA. This tolerance reflects the standard military-grade specification per MIL-PRF-19500/356, and no tighter tolerance suffix (e.g., 'C' or 'D') is applied to this specific part number. The 12 mA IZT ensures stable regulation within the device's optimal dynamic impedance region.
Does JANTXV1N4983DUS/TR require heatsinking in 5 W operation?
JANTXV1N4983DUS/TR is rated for 5 W dissipation at an end-cap temperature (TEC) of 140 °C, with a junction-to-end-cap thermal resistance of 7 °C/W. Heatsinking is required to maintain TEC ≤ 140 °C under full 5 W load; without thermal management, junction temperature will exceed safe limits. PCB copper area and optional adhesive mounting per D-5B pad layout enhance thermal transfer.
Is JANTXV1N4983DUS/TR compatible with lead-free reflow processes?
JANTXV1N4983DUS/TR features Sn/Pb terminations and is not qualified for lead-free reflow. Its end-cap finish is incompatible with peak temperatures >220 °C typical of Pb-free profiles. For RoHS-compliant designs, consult Microchip's qualified lead-free alternatives or verify compatibility through joint qualification testing before deployment.
What does the "DUS/TR" suffix indicate in JANTXV1N4983DUS/TR?
The "DUS" denotes the D-5B (E) hermetic glass surface-mount package; "TR" indicates tape-and-reel packaging per EIA-481-B. This distinguishes JANTXV1N4983DUS/TR from bulk-packaged variants like JANTXV1N4983US. The suffix confirms both physical form factor and automated assembly readiness without altering electrical or screening specifications.
How does JANTXV1N4983DUS/TR perform under radiation exposure?
JANTXV1N4983DUS/TR exhibits inherent radiation hardness per Microsemi MicroNote 050, with verified tolerance to total ionizing dose (TID) levels exceeding 100 krad(Si). This behavior stems from its voidless-glass hermetic construction and Category I metallurgical bond, making it suitable for low-earth orbit and avionics applications where single-event effects and cumulative dose must be mitigated.
JANTXV1N4983DUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 110 V
- Tolerance:
- ±1%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 125 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 83.6 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTXV1N4983DUS/TR FAQ
1.How can I place an order for JANTXV1N4983DUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N4983DUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N4983DUS/TR reliable?
The price and inventory of JANTXV1N4983DUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4983DUS/TR is usually 5 days.
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5.How can I obtain technical support or documentation for JANTXV1N4983DUS/TR?
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6.How does Aetrix verify that JANTXV1N4983DUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N4983DUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4983DUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N4983DUS/TR?
All JANTXV1N4983DUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4983DUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N4983DUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N4983DUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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