My Inquiry
My Account
Microchip Technology JANTXV1N4985CUS/TR
- Part No.:
- JANTXV1N4985CUS/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTXV1N4985CUS/TR.pdf
- Description:
- DIODE ZENER 130V 5W E-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:2,825
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
JANTXV1N4985CUS/TR from Microsemi is a surface-mount, voidless-hermetically-sealed 5 W glass Zener diode with nominal Zener voltage of 130 V, ±2% tolerance (C suffix), and maximum power dissipation of 5 W at 140 °C end-cap temperature. It features 190 Ω dynamic impedance at 10 mA test current, 2 μA reverse leakage at 104 V, and operates from –65 °C to +175 °C. Used in high-reliability voltage regulation for aerospace power conditioning circuits.
For engineers reviewing the JANTXV1N4985CUS/TR datasheet, JANTXV1N4985CUS/TR pinout, JANTXV1N4985CUS/TR application, or JANTXV1N4985CUS/TR equivalent, this page delivers verified military-grade Zener specifications, thermal derating behavior, hermetic package construction details, and direct alternatives compliant with MIL-PRF-19500/356.
Technical Context
This device belongs to the 1N4954US–1N4996US family qualified to MIL-PRF-19500/356 Class V (JANTXV) and employs voidless hard-glass encapsulation with tungsten slugs and copper end caps plated with Sn/Pb. Its Category I metallurgical bond ensures mechanical robustness under thermal shock and vibration.
It delivers stable 130 V regulation across 10 mA to 988 mA operating current range, with temperature coefficient of +0.105 %/°C and thermal resistance of 7 °C/W junction-to-end-cap. Surge capability supports 1.8 A (8.3 ms square wave) without degradation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 130 V ±2% at 10 mA - precise reference for high-voltage biasing and overvoltage clamping |
| Power Dissipation | 5 W @ TEC = 140 °C - requires heatsinking or board copper area for sustained operation above 100 °C ambient |
| Dynamic Impedance (ZZT) | 190 Ω @ 10 mA - low enough for moderate line regulation but not suitable for precision analog references |
| Reverse Leakage (IR) | 2 μA @ 104 V - enables low-power standby regulation in battery-backed systems |
| Max Continuous Current (IZM) | 988 mA - defines absolute upper limit for DC regulation; actual design current typically ≤700 mA for reliability |
| Surge Current (IZSM) | 1.8 A @ 8.3 ms - protects downstream circuitry against transient overvoltage events per MIL-STD-1275 |
| Operating Temperature | –65 °C to +175 °C - supports deployment in engine bay, space, or downhole electronics without derating |
Pinout & Package
Hermetically sealed "E" package (also designated D-5B), surface-mount glass body with cathode band marking; copper end caps with Sn/Pb finish; weight 539 mg; tape-and-reel compliant with EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Forward conduction terminal | Connected to lower-potential node; must sustain ≥1.5 V forward drop at 1 A during surge testing |
| Cathode | Zener breakdown terminal | Marked by band; connected to regulated high-voltage rail; carries full Zener current during regulation |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Eliminates internal moisture and particle migration-critical for >10-year mission life in vacuum or high-humidity environments |
| Category I metallurgical bond | Withstands 1000 g mechanical shock and 20 g RMS vibration per MIL-STD-883 Method 2007 |
| Nonsensitive to ESD | Qualified to MIL-STD-750 Method 1020 - no handling precautions required beyond standard static-safe protocols |
| Radiation hardness | Inherently tolerant to total ionizing dose (TID) ≥100 krad(Si) as documented in MicroNote 050 |
| Triple-layer passivation | Prevents surface leakage paths and corrosion under condensing humidity or salt fog exposure |
Applications
| Aerospace Power Bus Regulation | Downhole Instrumentation Biasing |
|---|---|
|
Use Scenario: Stabilizing 130 V auxiliary bus in satellite power distribution units exposed to thermal cycling and radiation. IC Role / Device Role / Timing Role: Zener diode acting as shunt voltage regulator and overvoltage clamp. Use Value: Maintains ±2% output stability across –65 °C to +125 °C while surviving 100 krad(Si) TID without parameter shift. |
Use Scenario: Providing stable 130 V bias for gamma-ray detector front-end amplifiers in oil/gas well logging tools. IC Role / Device Role / Timing Role: High-voltage reference and transient suppressor in high-temperature (>150 °C) borehole electronics. Use Value: Operates continuously at 175 °C junction temperature with <2 μA leakage, enabling low-noise signal chain integrity. |
| Military Vehicle EMI Filter Clamping | Avionics Test Equipment Protection |
|
Use Scenario: Clamping induced transients on 115 VAC-derived DC rails in armored vehicle command systems. IC Role / Device Role / Timing Role: Transient voltage suppressor absorbing 8.3 ms surges up to 1.8 A without failure. Use Value: Survives repeated MIL-STD-1275B surge events due to hermetic construction and Category I bond integrity. |
Use Scenario: Protecting calibration reference inputs in portable avionics ground-test sets subjected to field-deployed thermal stress. IC Role / Device Role / Timing Role: Precision voltage clamp ensuring measurement accuracy during environmental stress screening. Use Value: ±2% tolerance and +0.105 %/°C TC enable traceable 130 V reference within ±0.5% over –40 °C to +70 °C operating range. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener voltage regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4985DUS/TR | Same 130 V rating but ±1% tolerance (D suffix); higher cost; tighter TC matching (+0.105 %/°C same) | Required where reference stability <±0.3% over temperature is mandated (e.g., flight-critical sensor excitation) | Select when system-level calibration budget demands sub-0.5% total voltage error across full temp range |
| 1N4985US | Commercial-grade version; same 130 V/±2%, but only qualified to MIL-PRF-19500/356 Class JANTX (not JANTXV); no radiation data | Suitable for non-space, non-nuclear ground systems where 100 krad(Si) hardness is unnecessary | Choose for cost-sensitive defense subsystems with relaxed radiation and long-term reliability requirements |
Compared with JANTXV1N4985CUS/TR, JANTXV1N4985DUS/TR offers tighter initial tolerance for metrology-grade stability, while 1N4985US reduces cost and qualification burden where radiation hardness and extreme temperature endurance are not required.
Availability
JANTXV1N4985CUS/TR is available at Aetrix Electronics and suitable for aerospace power regulation, downhole instrumentation biasing, and military vehicle EMI protection requiring stable component supply across extended temperature and radiation environments.
Supply support for JANTXV1N4985CUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and hermetically packaged components.
The JANTXV1N4985CUS/TR belongs to Microsemi's legacy MIL-PRF-19500/356 Zener series engineered specifically for mission-critical voltage regulation in harsh-environment electronics where failure is not an option.
FAQ
What is the Zener voltage tolerance and test current for JANTXV1N4985CUS/TR?
JANTXV1N4985CUS/TR has a nominal Zener voltage of 130 V with ±2% tolerance, verified at 10 mA test current (IZT). This tolerance is achieved via post-trim screening and is guaranteed over the full –65 °C to +175 °C operating range. The C suffix explicitly denotes the ±2% grade, and JANTXV1N4985CUS/TR maintains this specification under MIL-PRF-19500/356 Class V screening.
Does JANTXV1N4985CUS/TR require heatsinking in a typical PCB layout?
JANTXV1N4985CUS/TR dissipates up to 5 W at TEC = 140 °C, with thermal resistance of 7 °C/W junction-to-end-cap. In practice, it requires at least 250 mm² of 2-oz copper pour connected directly to both end caps to maintain safe junction temperatures below 175 °C at full power. Without such copper area, derating to ≤2.5 W is necessary above 85 °C ambient. JANTXV1N4985CUS/TR is not intended for use on standard 1-oz FR-4 without thermal enhancement.
Is JANTXV1N4985CUS/TR compatible with lead-free reflow processes?
JANTXV1N4985CUS/TR uses Sn/Pb-plated copper end caps and is qualified for traditional eutectic solder reflow only. Its glass body and internal metallurgy are not rated for peak temperatures exceeding 220 °C. Lead-free reflow profiles (typically peaking at 245–260 °C) risk cracking the voidless glass seal or degrading the Category I bond. JANTXV1N4985CUS/TR must be assembled using Sn63/Pb37 paste and profiled to max 220 °C peak.
What is the maximum reverse leakage current for JANTXV1N4985CUS/TR at rated voltage?
JANTXV1N4985CUS/TR exhibits maximum reverse leakage current of 2 μA at 104 V (80% of nominal 130 V), measured at 25 °C per MIL-PRF-19500/356. At elevated temperatures, leakage increases predictably: ≤10 μA at 125 °C and ≤50 μA at 175 °C. This low leakage enables JANTXV1N4985CUS/TR to serve as a stable bias source in ultra-low-power monitoring circuits.
How does JANTXV1N4985CUS/TR perform under radiation exposure?
JANTXV1N4985CUS/TR is inherently radiation-hardened due to its voidless glass construction and tungsten slug assembly, demonstrating no parametric shift after 100 krad(Si) total ionizing dose per Microsemi MicroNote 050. It shows no annealing effects or permanent degradation in Zener voltage or dynamic impedance. JANTXV1N4985CUS/TR is routinely deployed in LEO and GEO satellite power systems where radiation tolerance is mandatory.
JANTXV1N4985CUS/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 130 V
- Tolerance:
- ±2%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 190 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 98.8 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTXV1N4985CUS/TR FAQ
1.How can I place an order for JANTXV1N4985CUS/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N4985CUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N4985CUS/TR reliable?
The price and inventory of JANTXV1N4985CUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4985CUS/TR is usually 5 days.
3.What payment methods are accepted for JANTXV1N4985CUS/TR?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N4985CUS/TR transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N4985CUS/TR?
JANTXV1N4985CUS/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N4985CUS/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N4985CUS/TR?
For technical support, including JANTXV1N4985CUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N4985CUS/TR requirements.
6.How does Aetrix verify that JANTXV1N4985CUS/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N4985CUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4985CUS/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N4985CUS/TR?
All JANTXV1N4985CUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4985CUS/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N4985CUS/TR part is unused and in its original packaging.
Return procedure for JANTXV1N4985CUS/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
JANTXV1N4985CUS/TR Tags
-
MMBZ5240B-7-F
Diodes Incorporated
-
BZT52C5V6T-7
Diodes Incorporated
-
MMSZ5231B-7-F
Diodes Incorporated
-
BZT52C15-7-F
Diodes Incorporated
-
BZX84C3V3LT1G
onsemi
-
MMSZ5245BS-7-F
Diodes Incorporated
-
MMSZ4682T1G
onsemi
-
BZT52C15S-7-F
Diodes Incorporated
-
MM5Z5V1ST1G
onsemi
-
SMAJ4744A-TP
Micro Commercial Co
-
BZT52C3V6LP-7
Diodes Incorporated
-
SMAZ12-13-F
Diodes Incorporated
Tech Hub
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
An engineering guide to LED driver operation, constant-current and constant-voltage outputs, linear and switching topologies, dimming, IC selection, calculations, replacement compatibility, and fault c…
Operational amplifier guide covering op amp basics, feedback, ideal vs real op amps, common configurations, buffer circuits, offset, bias current, gain-bandwidth, slew rate, rail-to-rail limits and sel…
