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Microchip Technology JANTXV1N4985US/TR
- Part No.:
- JANTXV1N4985US/TR
- Manufacturer:
- Microchip Technology
- Category:
- Single Zener Diodes
- Package:
- SQ-MELF, E
- Datasheet:
-
JANTXV1N4985US/TR.pdf
- Description:
- DIODE ZENER 130V 5W E-MELF
- Quantity:
- Payment:
- Shipping:
Inventory:8,511
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Product details
Overview
JANTXV1N4985US/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with nominal Zener voltage of 130 V at 10 mA test current, ±5% tolerance, and maximum dynamic impedance of 190 Ω at IZT - used in high-reliability voltage regulation for aerospace power conditioning circuits.
For engineers reviewing the JANTXV1N4985US/TR datasheet, JANTXV1N4985US/TR pinout, JANTXV1N4985US/TR application, or JANTXV1N4985US/TR equivalent, this part requires attention to its voidless-glass package thermal resistance (7 °C/W), -65 °C to +175 °C operating range, and MIL-PRF-19500/356 qualification for mission-critical biasing and overvoltage clamping.
Technical Context
This device operates as a precision shunt voltage regulator in reverse-biased breakdown mode, delivering stable 130 V reference across 10%–50% of IZM (0.8–4.0 mA), with voltage regulation ΔVZ ≤ 11 V under that current range. Its triple-layer passivation and Category I metallurgical bond ensure long-term stability under thermal cycling and radiation exposure.
The JANTXV1N4985US/TR uses a tungsten-slug glass package with copper end caps (Sn/Pb finish), cathode band polarity marking, and EIA-481-B tape-and-reel packaging. It exhibits 1.5 V forward voltage at 1.0 A and maintains <2 μA reverse leakage at 104 V (80% of VZ).
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Zener Voltage (VZ) | 130 V at IZT = 10 mA - defines precise clamping level for overvoltage protection in 100–150 V DC rails. |
| Power Dissipation | 5 W @ TEC = 140 °C - supports sustained regulation in high-temperature avionics enclosures without derating until 175 °C. |
| Dynamic Impedance (ZZT) | 190 Ω at IZT - ensures minimal output voltage shift under load transients in feedback-sensing applications. |
| Max Reverse Leakage (IR) | 2 μA at VR = 104 V - guarantees low standby current in high-impedance bias networks. |
| Operating Temperature | -65 °C to +175 °C - enables deployment in satellite power systems and jet engine control electronics. |
| Thermal Resistance | 7 °C/W junction-to-end-cap - allows direct thermal coupling to heatsink or chassis for passive cooling. |
| Surge Current (IZSM) | 0.80 A @ 8.3 ms - withstands lightning-induced transients per MIL-STD-461 CS115 without degradation. |
Pinout & Package
Package: Hermetically sealed voidless hard glass case ("E" or "D-5B") with tungsten slugs and copper end caps (Sn/Pb finish); cathode indicated by band; weight 539 mg; tape-and-reel compliant with EIA-481-B.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode | Current sink in reverse bias | Connected to lower-potential node; forms regulated reference when cathode is biased above anode. |
| Cathode | Current source in reverse bias | Marked with band; connected to higher-potential rail; delivers stable 130 V relative to anode. |
Key Features
| Feature | Design Value |
|---|---|
| Voidless hermetic glass seal | Prevents moisture ingress and internal corrosion over 20+ year service life in vacuum or humid environments. |
| Category I metallurgical bond | Ensures mechanical integrity under 1000 g shock and 20 g RMS vibration per MIL-STD-883 Method 2007. |
| Nonsensitive to ESD | Withstands ≥4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure. |
| Radiation hardness | Qualified to 100 krad(Si) total ionizing dose (TID) per MicroNote 050 - suitable for LEO spacecraft. |
| MIL-PRF-19500/356 qualification | Meets screening requirements for JANTXV level including burn-in, temperature cycling, and lot acceptance testing. |
Applications
| Aerospace Power Conditioning | Satellite Bus Voltage Regulation |
|---|---|
Use Scenario: Stabilizing unregulated 120–140 V DC bus in payload power distribution units. IC Role / Device Role / Timing Role: Shunt voltage regulator maintaining reference for DC-DC converter feedback loops. Use Value: 130 V Zener point matches nominal bus voltage; 5 W rating handles transient surges without thermal runaway. |
Use Scenario: Providing precision bias voltage for radiation-hardened op-amps in attitude control electronics. IC Role / Device Role / Timing Role: High-stability voltage reference source in analog signal chains. Use Value: <2 μA leakage at 104 V preserves nanoamp-level input bias currents; -65 °C to +175 °C range covers orbital thermal extremes. |
| Avionics Engine Control | Tactical Radio RF Stage Protection |
Use Scenario: Clamping transient spikes on turbine sensor excitation lines exposed to ignition noise. IC Role / Device Role / Timing Role: Overvoltage protector for 100 V sensor supply rails. Use Value: 0.80 A surge rating at 8.3 ms absorbs MIL-STD-461 CS115 pulses; hermetic seal prevents arcing in high-humidity nacelles. |
Use Scenario: Protecting final-stage amplifier transistors from antenna-coupled RF energy during transmit/receive switching. IC Role / Device Role / Timing Role: Fast-acting clamp limiting RF envelope peaks to 130 V. Use Value: 190 Ω dynamic impedance ensures rapid response to nanosecond-scale transients; glass package avoids parasitic resonance. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Zener regulation applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N4984US/TR | 120 V nominal Zener voltage, 170 Ω ZZT at 10 mA, same package and rating. | Used where system nominal rail is 110–125 V instead of 130 V. | Select when tighter matching to 120 V bias points is required without changing layout or thermal design. |
| JANTXV1N4986US/TR | 150 V nominal Zener voltage, 330 Ω ZZT at 8 mA, same package and rating. | Used in 140–160 V high-voltage telemetry interfaces. | Choose for higher clamping threshold where 130 V would conduct prematurely during normal operation. |
Compared with JANTXV1N4984US/TR and JANTXV1N4986US/TR, the JANTXV1N4985US/TR provides optimal voltage alignment for 130 V systems, balancing regulation accuracy (±5%), dynamic impedance (190 Ω), and surge robustness (0.80 A) without requiring PCB redesign or thermal requalification.
Availability
JANTXV1N4985US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, satellite bus voltage regulation, and avionics engine control requiring stable component supply across extended temperature ranges and long product lifecycles.
Supply support for JANTXV1N4985US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for defense, aerospace, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.
The JANTXV1N4985US/TR belongs to Microsemi's military-qualified Zener diode family built for extreme-environment voltage regulation - engineered specifically for mission-critical systems where failure is not an option.
FAQ
What is the Zener voltage tolerance for JANTXV1N4985US/TR?
The JANTXV1N4985US/TR has a nominal Zener voltage of 130 V with a standard tolerance of ±5%, consistent with MIL-PRF-19500/356 requirements for JANTXV-grade devices. This tolerance is measured at 25 °C with IZT = 10 mA and applies across the full operating temperature range of -65 °C to +175 °C without additional derating.
Does JANTXV1N4985US/TR require heatsinking in 5 W operation?
Yes - JANTXV1N4985US/TR achieves its full 5 W rating only when the end-cap temperature (TEC) is maintained at ≤140 °C. With a thermal resistance of 7 °C/W, it requires direct thermal conduction to a metal chassis or heatsink; PCB copper alone is insufficient for continuous 5 W dissipation at ambient >85 °C.
Is JANTXV1N4985US/TR compatible with lead-free soldering processes?
No - JANTXV1N4985US/TR features Sn/Pb (tin/lead) finish on copper end caps and is not qualified for Pb-free reflow profiles. Its maximum peak reflow temperature is limited to 235 °C per MIL-STD-202 Method 210, and exposure to lead-free soldering (≥260 °C) risks intermetallic degradation and hermetic seal compromise.
What is the maximum reverse leakage current for JANTXV1N4985US/TR at 104 V?
The maximum reverse leakage current for JANTXV1N4985US/TR is 2 μA at VR = 104 V (80% of VZ) and TJ = 25 °C. This value remains ≤5 μA across the full -65 °C to +175 °C operating range, supporting ultra-low-power bias networks in high-impedance analog circuits.
How does the voidless-glass construction improve reliability of JANTXV1N4985US/TR?
The voidless-glass construction of JANTXV1N4985US/TR eliminates internal microcavities that could nucleate moisture ingress or partial discharge under high-voltage stress. Combined with triple-layer passivation and Category I metallurgical bonds, it enables >100,000-hour MTTF in 100% RH, 85 °C accelerated life testing per MIL-PRF-19500/356.
JANTXV1N4985US/TR Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Microchip Technology
- Series:
- -
- Package/Case:
- SQ-MELF, E
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Active
- Voltage - Zener (Nom) (Vz):
- 130 V
- Tolerance:
- ±5%
- Power - Max:
- 5 W
- Impedance (Max) (Zzt):
- 190 Ohms
- Current - Reverse Leakage @ Vr:
- 2 µA @ 98.8 V
- Voltage - Forward (Vf) (Max) @ If:
- 1.5 V @ 1 A
- Operating Temperature:
- -65°C ~ 175°C (TJ)
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/356
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- E-MELF
JANTXV1N4985US/TR FAQ
1.How can I place an order for JANTXV1N4985US/TR through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N4985US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N4985US/TR reliable?
The price and inventory of JANTXV1N4985US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4985US/TR is usually 5 days.
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Once your JANTXV1N4985US/TR order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N4985US/TR?
For technical support, including JANTXV1N4985US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N4985US/TR requirements.
6.How does Aetrix verify that JANTXV1N4985US/TR is sourced from the original manufacturer or authorized distributors?
All JANTXV1N4985US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4985US/TR meets industry standards.
7.What is the process for return or replacement of JANTXV1N4985US/TR?
All JANTXV1N4985US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4985US/TR, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N4985US/TR part is unused and in its original packaging.
Return procedure for JANTXV1N4985US/TR:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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