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Microchip Technology JANTXV1N4986US/TR

Part No.:
JANTXV1N4986US/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTXV1N4986US/TR.pdf
Description:
DIODE ZENER 150V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,696

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Product details

Overview

JANTXV1N4986US/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with a nominal Zener voltage of 150 V ±5%, dynamic impedance of 330 Ω at 10 mA test current, and operating junction temperature range of –65 °C to +175 °C. It serves as a precision voltage reference and overvoltage clamp in high-reliability aerospace, defense, and downhole instrumentation systems.

For engineers reviewing the JANTXV1N4986US/TR datasheet, JANTXV1N4986US/TR pinout, JANTXV1N4986US/TR application, or JANTXV1N4986US/TR equivalent, key selection criteria include its voidless-glass hermetic construction, Category I metallurgical bond, radiation-hardened behavior per MicroNote 050, and compliance with MIL-PRF-19500/356 Class V screening.

Technical Context

This device operates in reverse breakdown mode with tightly controlled Zener regulation across wide current (10 mA to 930 mA) and temperature (–65 °C to +175 °C) ranges. Its 150 V nominal Zener voltage exhibits a temperature coefficient of +0.105 %/°C and maintains regulation stability with ΔVZ ≤ 13 V between 10% and 50% of IZM.

The "E" package (D-5B) uses tungsten slugs and copper end caps with Sn/Pb finish, enabling direct solder attachment without adhesive. Thermal resistance is 7 °C/W junction-to-end-cap, supporting stable 5 W operation when mounted on thermally optimized PCB pads per Microsemi's recommended pad layout.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 150 V ±5% at IZT = 8 mA - defines precise clamping/reference level under standard test conditions
Power Dissipation 5 W @ TEC = 140 °C - maximum continuous power handling before thermal derating begins
Dynamic Impedance (ZZT) 330 Ω @ IZT = 8 mA - low AC impedance ensures minimal voltage variation under dynamic load changes
Max Reverse Leakage (IR) 2 μA @ VR = 114 V - ultra-low leakage preserves accuracy in high-impedance bias networks
Temp Coefficient (αVZ) +0.105 %/°C @ IZT - predictable positive drift enables compensation in precision references
Surge Current (IZSM) 0.75 A @ 8.3 ms - withstands transient overvoltage events without degradation
Junction Temp Range –65 °C to +175 °C - supports operation in extreme environments including space and oilfield tools

Pinout & Package

The JANTXV1N4986US/TR uses the "E" package (also designated D-5B), a hermetically sealed voidless glass case with tungsten slugs and copper end caps finished with Sn/Pb. Polarity is marked by a cathode band on the glass body. The device has two terminals: anode and cathode, with no internal leads or third connection.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal / Reference ground node Connected to system ground or lowest potential point in Zener regulator configuration
Cathode Reverse breakdown terminal / Regulated output node Provides stable 150 V reference when biased above breakdown; marked by band

Key Features

Feature Design Value
Voidless hermetic glass seal Prevents moisture ingress and long-term parameter drift in humid or corrosive environments
Category I metallurgical bond Ensures mechanical integrity and thermal cycling reliability exceeding 1000 cycles between –65 °C and +175 °C
Nonsensitive to ESD (MIL-STD-750 Method 1020) Eliminates need for external ESD protection during handling and assembly
Inherent radiation hardness Validated per Microsemi MicroNote 050 for total ionizing dose tolerance >100 krad(Si)
MIL-PRF-19500/356 JANTXV qualification Includes full lot acceptance testing (LAT), burn-in, and parametric screening for mission-critical use

Applications

Aerospace Power Conditioning Downhole Telemetry Systems

Use Scenario: Voltage clamping in DC-DC converter feedback loops within satellite power management units.

IC Role / Device Role / Timing Role: Zener reference element providing stable 150 V threshold for overvoltage protection circuitry.

Use Value: Maintains regulation accuracy over –65 °C to +125 °C operational range while surviving launch vibration and vacuum exposure.

Use Scenario: Precision biasing of high-voltage sensor front-ends in oil/gas well logging tools.

IC Role / Device Role / Timing Role: Stable 150 V reference source for analog signal conditioning under 175 °C ambient conditions.

Use Value: Hermetic seal prevents parameter shift due to H2S and high-pressure hydrocarbon exposure.

Defense Radar Pulse Modulators Nuclear Instrumentation

Use Scenario: Gate voltage clamping for high-side IGBTs in pulsed radar transmitter stages.

IC Role / Device Role / Timing Role: Transient voltage suppressor limiting gate drive overshoot during fast switching transitions.

Use Value: 0.75 A surge rating and 8.3 ms waveform capability absorb repetitive switching spikes without degradation.

Use Scenario: High-stability reference in radiation monitoring dosimeters deployed in reactor containment zones.

IC Role / Device Role / Timing Role: Radiation-hardened voltage reference maintaining calibration integrity after 100+ krad(Si) exposure.

Use Value: Inherent TID tolerance eliminates need for shielding or frequent recalibration in high-radiation fields.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N4985US/TR 130 V nominal Zener voltage, 190 Ω ZZT, +0.105 %/°C αVZ Lower clamping voltage; suitable where 130 V threshold is required instead of 150 V Select when system overvoltage protection threshold must be reduced by 20 V without changing footprint or screening level
JANTXV1N4987US/TR 160 V nominal Zener voltage, 350 Ω ZZT, +0.105 %/°C αVZ Higher clamping voltage; used where tighter margin above 150 V operating rail is needed Choose for enhanced safety margin in 160 V bus systems where 150 V devices risk premature conduction

Compared with JANTXV1N4985US/TR and JANTXV1N4987US/TR, the JANTXV1N4986US/TR provides optimal voltage headroom for 150 V nominal systems while balancing dynamic impedance (330 Ω) and thermal stability-critical for closed-loop regulation in high-temperature avionics.

Availability

JANTXV1N4986US/TR is available at Aetrix Electronics and suitable for aerospace power conditioning, downhole telemetry systems, defense radar pulse modulators, and nuclear instrumentation requiring stable component supply across extended temperature and radiation environments.

Supply support for JANTXV1N4986US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with expertise in radiation-hardened and hermetic packaging technologies.

The JANTXV1N4986US/TR belongs to Microsemi's MIL-PRF-19500/356 qualified Zener series, engineered specifically for voltage regulation in mission-critical systems where failure is not an option.

FAQ

What is the Zener voltage tolerance for JANTXV1N4986US/TR?

The JANTXV1N4986US/TR has a nominal Zener voltage of 150 V with a standard tolerance of ±5%, as specified in the Microsemi SD44A datasheet. This tolerance applies at IZT = 8 mA and TA = 25 °C. No suffix indicates the standard 5% grade; tighter tolerances require C (±2%) or D (±1%) suffixes not present in this part number. JANTXV1N4986US/TR meets this specification under full MIL-PRF-19500/356 Class V screening.

Does JANTXV1N4986US/TR require external heat sinking?

No, JANTXV1N4986US/TR does not require external heat sinking when mounted on a PCB with Microsemi's recommended D-5B pad layout and operated within its 5 W derating curve. Its 7 °C/W junction-to-end-cap thermal resistance allows full 5 W dissipation at TEC = 140 °C. Adequate copper area (≥0.5 in² per terminal) and via stitching to internal planes are sufficient for thermal management in most JANTXV1N4986US/TR applications.

Is JANTXV1N4986US/TR compatible with lead-free reflow processes?

JANTXV1N4986US/TR features Sn/Pb terminations and is not qualified for lead-free reflow. Its end caps are specified with tin/lead finish per the SD44A datasheet, and Microsemi does not validate performance beyond 220 °C peak profile. For RoHS-compliant alternatives, engineers should consult Microchip's current-generation Zener offerings or consider JANTXV1N4986US/TR only in Sn/Pb-compatible assembly lines.

How is polarity identified on JANTXV1N4986US/TR?

Polarity on JANTXV1N4986US/TR is indicated by a visible cathode band on the glass body-consistent with industry-standard diode marking. The banded end is the cathode, and the unmarked end is the anode. This marking is verified in the "MECHANICAL AND PACKAGING" section of the SD44A datasheet and remains visible post-reflow, enabling optical inspection and automated placement verification for JANTXV1N4986US/TR.

What is the maximum surge current rating for JANTXV1N4986US/TR?

JANTXV1N4986US/TR is rated for a nonrepetitive peak surge current (IZSM) of 0.75 A at an 8.3 ms half-sine waveform, as defined in the "ELECTRICAL CHARACTERISTICS" table of the SD44A datasheet. This rating reflects its ability to absorb transient energy without parametric shift or catastrophic failure, making it suitable for overvoltage protection in pulsed power systems using JANTXV1N4986US/TR.

JANTXV1N4986US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
150 V
Tolerance:
±5%
Power - Max:
5 W
Impedance (Max) (Zzt):
330 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 114 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTXV1N4986US/TR FAQ

1.How can I place an order for JANTXV1N4986US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N4986US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N4986US/TR reliable?

The price and inventory of JANTXV1N4986US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4986US/TR is usually 5 days.

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JANTXV1N4986US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N4986US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N4986US/TR?

For technical support, including JANTXV1N4986US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N4986US/TR requirements.

6.How does Aetrix verify that JANTXV1N4986US/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N4986US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4986US/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N4986US/TR?

All JANTXV1N4986US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4986US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N4986US/TR part is unused and in its original packaging.

Return procedure for JANTXV1N4986US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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