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Microchip Technology JANTXV1N4987CUS/TR

Part No.:
JANTXV1N4987CUS/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTXV1N4987CUS/TR.pdf
Description:
DIODE ZENER 160V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:5,194

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Product details

Overview

JANTXV1N4987CUS/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation, with a nominal Zener voltage of 160 V at 8 mA test current, ±2% tolerance (C suffix), and operating junction temperature range of –65 °C to +175 °C. It serves as a precision voltage reference and overvoltage clamp in high-reliability power regulation circuits for aerospace telemetry systems.

For engineers reviewing the JANTXV1N4987CUS/TR datasheet, JANTXV1N4987CUS/TR pinout, JANTXV1N4987CUS/TR application, or JANTXV1N4987CUS/TR equivalent, this part is selected for critical voltage stabilization where long-term parametric stability, radiation hardness, and zero voids in glass seal integrity are mandatory design requirements.

Technical Context

This device belongs to the MIL-PRF-19500/356 qualified 1N4954US–1N4996US series, featuring voidless hermetic glass construction with internal Category I metallurgical bonds and triple-layer passivation. Its Zener breakdown mechanism delivers stable regulation across –65 °C to +175 °C with <±0.105 %/°C temperature coefficient at 8 mA.

It exhibits 350 Ω dynamic impedance at 8 mA (IZT), 2 mA maximum reverse leakage at 121.6 V, and 1.5 V forward voltage at 1 A - characteristics validated under MIL-STD-750 Method 1020 ESD testing and inherent radiation tolerance per MicroNote 050.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 160 V ±2% at 8 mA - defines precise clamping threshold for overvoltage protection in 120–200 V DC bus monitoring.
Power Dissipation 5 W @ TEC = 140 °C - enables stable operation without derating in conduction-cooled avionics enclosures.
Dynamic Impedance (ZZT) 350 Ω at IZT = 8 mA - ensures minimal output voltage shift under load transients in reference supply designs.
Max Reverse Leakage (IR) 2 μA at 121.6 V - guarantees negligible standby current draw in battery-backed spaceborne sensor interfaces.
Temp Coefficient (αVZ) +0.105 %/°C - supports predictable drift compensation in wide-temperature-range voltage references.
Surge Current (IZSM) 0.7 A @ 8.3 ms - withstands lightning-induced transients per DO-160 Section 22 Level 3 in aircraft power systems.
Forward Voltage (VF) 1.5 V @ 1 A - allows use as polarity-protected rectifier in low-duty-cycle bias networks.

Pinout & Package

Package: Hermetically sealed voidless hard glass case ("E" package / "D-5B"), with copper end caps finished in Sn/Pb, cathode indicated by band, weight 539 mg, tape-and-reel compliant per EIA-481-B.

Pin/Terminal Circuit Role Design Meaning
Anode Current entry terminal in forward bias; connected to ground or low-side return in shunt regulator topology. Must be routed with low-inductance path to minimize ringing during transient clamping events.
Cathode Current exit terminal in forward bias; connected to regulated node or positive rail in shunt regulator configuration. Banded end - polarity marking essential for correct orientation on PCB to prevent catastrophic failure.

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates moisture ingress and internal delamination risk over 20+ year mission lifetimes in vacuum or high-humidity environments.
Category I metallurgical bond Ensures mechanical robustness against thermal cycling stress (–65 °C to +175 °C) without bond lift or interfacial cracking.
Triple-layer passivation Prevents surface leakage paths and ion migration under high electric field stress (>100 V/mm) in space-grade applications.
Nonsensitive to ESD Withstands >4 kV HBM per MIL-STD-750 Method 1020 - eliminates need for external ESD protection in handling and assembly.
Inherent radiation hardness No parametric degradation up to 100 krad(Si) total ionizing dose - certified per Microsemi MicroNote 050 for LEO/MEO missions.

Applications

Aerospace Power Bus Protection Satellite Voltage Reference

Use Scenario: Clamping transient overvoltages on 100 V DC primary power bus in launch vehicle telemetry modules.

IC Role / Device Role / Timing Role: Shunt Zener regulator acting as crowbar element during input surge events.

Use Value: Withstands 0.7 A 8.3 ms surges while holding bus voltage ≤160 V, preventing downstream FPGA and ADC damage.

Use Scenario: Providing stable 160 V reference for high-voltage DAC calibration in Earth observation satellite imaging subsystems.

IC Role / Device Role / Timing Role: Precision Zener reference source with <±0.105 %/°C drift for 16-bit analog signal chain accuracy.

Use Value: Maintains <±0.2% absolute voltage accuracy over –40 °C to +85 °C operational range without active compensation.

Military Radar Bias Supply Nuclear Instrumentation Channel

Use Scenario: Regulating bias voltage for GaN RF power amplifier stages in airborne AESA radar transceivers.

IC Role / Device Role / Timing Role: High-stability shunt regulator supplying fixed gate bias under pulsed RF load conditions.

Use Value: 350 Ω dynamic impedance minimizes ripple coupling into sensitive RF bias nodes during 10 kHz pulse modulation.

Use Scenario: Establishing calibrated high-voltage threshold in neutron detection pulse-height analyzers used in reactor monitoring.

IC Role / Device Role / Timing Role: Radiation-hardened Zener reference defining discriminator trip point for pulse amplitude discrimination.

Use Value: Zero parametric shift after 100 krad(Si) exposure ensures consistent channel gain calibration across multi-year deployments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N4987DUS/TR Same 160 V rating but ±1% tolerance (D suffix); higher cost; tighter αVZ not specified Required only when absolute voltage accuracy better than ±2% is mandated in metrology-grade calibrators Select JANTXV1N4987DUS/TR if system-level calibration traceability requires sub-0.1% initial tolerance.
1N4987US Commercial-grade version; no JAN/JANTXV qualification; same electrical specs but no MIL-PRF-19500/356 screening Acceptable for non-mission-critical industrial controls where radiation hardness and extended temperature range are not required Choose 1N4987US only for cost-sensitive terrestrial applications with ambient temperature <+125 °C and no radiation exposure.

Compared with JANTXV1N4987CUS/TR, JANTXV1N4987DUS/TR offers improved initial tolerance at higher cost and unverified thermal stability, while 1N4987US sacrifices military screening and radiation resilience for lower procurement cost and shorter lead time.

Availability

JANTXV1N4987CUS/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, satellite voltage reference, and military radar bias supply requiring stable component supply across extended temperature and radiation environments.

Supply support for JANTXV1N4987CUS/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal components for defense, aerospace, and industrial markets.

The JANTXV1N4987CUS/TR belongs to Microsemi's MIL-PRF-19500/356-qualified Zener diode family, engineered specifically for voltage regulation in mission-critical systems where failure is not an option.

FAQ

What is the Zener voltage tolerance for JANTXV1N4987CUS/TR?

JANTXV1N4987CUS/TR has a nominal Zener voltage of 160 V with a tolerance of ±2%, indicated by the "C" suffix in the part number. This tolerance is guaranteed over the full operating temperature range of –65 °C to +175 °C and applies at the specified test current of 8 mA, per MIL-PRF-19500/356 screening requirements.

Is JANTXV1N4987CUS/TR radiation hardened?

Yes, JANTXV1N4987CUS/TR is inherently radiation hard per Microsemi MicroNote 050, exhibiting no parametric degradation up to 100 krad(Si) total ionizing dose. This radiation tolerance is intrinsic to its voidless hermetic glass construction and Category I metallurgical bond, not added via process modification.

What is the maximum continuous Zener current for JANTXV1N4987CUS/TR?

The maximum continuous Zener current (IZM) for JANTXV1N4987CUS/TR is 475 mA, calculated from its 5 W power rating and 160 V Zener voltage (P = V × I). This value assumes operation at TEC = 140 °C; derating is linear to zero at +175 °C junction temperature.

Does JANTXV1N4987CUS/TR require external ESD protection?

No, JANTXV1N4987CUS/TR is nonsensitive to ESD per MIL-STD-750 Method 1020 and does not require external ESD protection circuitry. Its triple-layer passivation and hermetic seal provide intrinsic immunity to electrostatic discharge events exceeding 4 kV HBM.

What package type is used for JANTXV1N4987CUS/TR?

JANTXV1N4987CUS/TR uses the "E" package (also designated "D-5B"), a surface-mount hermetically sealed voidless hard glass case with tungsten slugs and copper end caps finished in Sn/Pb. The cathode is marked by a visible band on the glass body.

JANTXV1N4987CUS/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
160 V
Tolerance:
±2%
Power - Max:
5 W
Impedance (Max) (Zzt):
350 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 121.6 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTXV1N4987CUS/TR FAQ

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Please submit a Request for Quotation (RFQ) for JANTXV1N4987CUS/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of JANTXV1N4987CUS/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4987CUS/TR is usually 5 days.

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5.How can I obtain technical support or documentation for JANTXV1N4987CUS/TR?

For technical support, including JANTXV1N4987CUS/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N4987CUS/TR requirements.

6.How does Aetrix verify that JANTXV1N4987CUS/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N4987CUS/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4987CUS/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N4987CUS/TR?

All JANTXV1N4987CUS/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4987CUS/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N4987CUS/TR part is unused and in its original packaging.

Return procedure for JANTXV1N4987CUS/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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