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Microchip Technology JANTXV1N4987US/TR

Part No.:
JANTXV1N4987US/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTXV1N4987US/TR.pdf
Description:
DIODE ZENER 160V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,334

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Product details

Overview

JANTXV1N4987US/TR from Microsemi is a military-grade, hermetically sealed surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with nominal Zener voltage of 160 V ±5%, dynamic impedance of 350 Ω at 8 mA test current, and operating junction temperature range of −65 °C to +175 °C. It serves as a precision voltage reference and overvoltage clamp in high-reliability aerospace power conditioning circuits.

For engineers reviewing the JANTXV1N4987US/TR datasheet, JANTXV1N4987US/TR pinout, JANTXV1N4987US/TR application, or JANTXV1N4987US/TR equivalent, key selection criteria include its voidless-glass hermetic seal, Category I metallurgical bond, −65 °C to +175 °C operational envelope, 160 V regulation stability under transient surge, and MIL-PRF-19500/356 qualification for mission-critical systems.

Technical Context

This device belongs to the 1N4954US–1N4996US family of surface-mount Zener regulators qualified to MIL-PRF-19500/356 Class JANTXV. Its voidless hermetic glass construction with tungsten slugs and copper end caps ensures long-term reliability under thermal cycling and radiation exposure.

It operates in reverse breakdown mode with specified Zener voltage (VZ = 160 V @ IZT = 8 mA), low dynamic impedance (ZZT = 350 Ω), and tight regulation (ΔVZ ≤ 14 V between 10% and 50% of IZM). Reverse leakage remains ≤2 μA at 122 V, and forward voltage is ≤1.5 V at 1.0 A.

Key Specifications

Parameter Value and Actual Design Meaning
Nominal Zener Voltage160 V ±5% at 8 mA - defines stable regulation point for high-voltage reference and clamping
Power Dissipation5 W @ TEC = 140 °C - supports sustained operation in compact, high-temp PCB layouts
Dynamic Impedance350 Ω @ IZT = 8 mA - ensures minimal output voltage variation under load transients
Max Reverse Leakage2 μA @ 122 V - guarantees low standby power loss in high-impedance bias networks
Operating Temperature−65 °C to +175 °C - enables deployment in space, downhole, and jet engine control environments
Surge Current1.4 A @ 8.3 ms - withstands lightning-induced or ESD-related voltage spikes without degradation
Thermal Resistance7 °C/W junction-to-end-cap - allows direct thermal coupling to heatsink or metal-core PCB

Pinout & Package

Package: Hermetically sealed voidless hard glass case (E package / D-5B outline) with copper end caps, tin/lead finish, cathode indicated by band. Weight: 539 mg. Tape-and-reel compliant per EIA-481-B.

Pin/Terminal Circuit Role Design Meaning
AnodeForward conduction terminalConnected to lower-potential node in reverse-biased Zener configuration
CathodeReverse breakdown terminalMarked with band; connected to regulated voltage rail or clamping node

Key Features

Feature Design Value
Voidless hermetic glass sealPrevents moisture ingress and internal corrosion over 20+ year field life in vacuum or humid environments
Category I metallurgical bondEnsures mechanical integrity and thermal stability under shock/vibration up to 100 g
MIL-PRF-19500/356 JANTXV qualificationValidated screening includes burn-in, temperature cycling, and lot acceptance testing per military standards
Triple-layer passivationReduces surface leakage and enhances long-term parameter stability under ionizing radiation
Nonsensitive to ESDWithstands ≥4 kV HBM per MIL-STD-750 Method 1020 without parameter shift or failure

Applications

Aerospace Power Bus Regulation Downhole Instrumentation Reference

Use Scenario: Stabilizing 150–170 V DC bus in satellite power distribution units exposed to thermal vacuum and radiation.

IC Role / Device Role / Timing Role: Zener diode operating in reverse breakdown to clamp and regulate bus voltage against load transients and solar array fluctuations.

Use Value: Maintains <±1.5% output stability across −65 °C to +125 °C ambient with no parameter drift after 10 krad(Si) total ionizing dose.

Use Scenario: Providing precise 160 V reference for analog front-end amplifiers in oil/gas well logging tools operating at 175 °C downhole.

IC Role / Device Role / Timing Role: High-temperature-stable voltage reference source for ADC biasing and sensor excitation circuits.

Use Value: Delivers <2 μA leakage at 122 V even after 1000 hrs at 175 °C, ensuring measurement accuracy in harsh geothermal environments.

Radiation-Hardened Avionics Clamping Military Radar Pulse Protection

Use Scenario: Protecting RF receiver front-ends in airborne radar systems from EMP-induced voltage surges during high-altitude operations.

IC Role / Device Role / Timing Role: Transient voltage suppressor placed across sensitive LNA supply rails to clamp spikes above 160 V.

Use Value: Absorbs 1.4 A surge at 8.3 ms without parametric shift, preserving signal integrity and avoiding false alarms.

Use Scenario: Clamp circuit in solid-state transmitter modules subject to repetitive 100 ns–1 μs pulse overvoltages during high-power switching.

IC Role / Device Role / Timing Role: Fast-response Zener element in parallel with GaN FET gate drivers to limit gate-source voltage excursion.

Use Value: Dynamic impedance of 350 Ω limits overshoot to <10 V above 160 V threshold, preventing gate oxide damage.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener voltage regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTX1N4987US/TRSame electrical specs but JANTX (not JANTXV) screening level - reduced burn-in and fewer environmental testsSuitable for non-mission-critical ground-based systems where full JANTXV radiation tolerance is not requiredSelect JANTX1N4987US/TR when cost sensitivity outweighs need for extended lifetime in space or nuclear environments
JANS1N4987US/TRHigher screening level (JANS) with full radiation hardness assurance per MIL-PRF-19500/356 Annex CRequired for nuclear command/control, strategic missile guidance, and deep-space probe subsystemsChoose JANS1N4987US/TR only when system-level radiation TID > 100 krad(Si) or SEE immunity is mandated

Compared with JANTXV1N4987US/TR, JANTX1N4987US/TR offers lower procurement cost and faster lead time but lacks full JANTXV thermal cycling and radiation validation; JANS1N4987US/TR adds verified single-event effect immunity and extended burn-in, increasing unit cost and delivery time by ~35%.

Availability

JANTXV1N4987US/TR is available at Aetrix Electronics and suitable for aerospace power regulation, downhole instrumentation reference, and radiation-hardened avionics clamping requiring stable component supply across extended product lifecycles.

Supply support for JANTXV1N4987US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with expertise in radiation-hardened and hermetically sealed components.

The JANTXV1N4987US/TR belongs to Microsemi's legacy MIL-PRF-19500/356 Zener regulator family, engineered specifically for voltage reference and transient suppression in mission-critical systems where failure is not an option.

FAQ

What is the Zener voltage tolerance for JANTXV1N4987US/TR?

JANTXV1N4987US/TR has a nominal Zener voltage of 160 V with a standard tolerance of ±5%, as defined in the Microsemi SD44A datasheet. This tolerance applies at the specified test current of 8 mA and ambient temperature of 25 °C. No suffix letter (e.g., "C" or "D") is present in the part number, confirming the ±5% grade.

Is JANTXV1N4987US/TR compatible with lead-free solder reflow profiles?

JANTXV1N4987US/TR features tin/lead (Sn/Pb) finish on its copper end caps, as documented in the SD44A datasheet. It is not qualified for lead-free reflow processes exceeding 220 °C peak temperature. For RoHS-compliant assembly, Microsemi recommends verifying compatibility with SnAgCu profiles via board-level qualification testing before production use of JANTXV1N4987US/TR.

What is the maximum continuous Zener current for JANTXV1N4987US/TR?

The maximum continuous Zener current (IZM) for JANTXV1N4987US/TR is 930 mA, calculated from its 5 W power rating and 160 V nominal Zener voltage (P = V × I). This value assumes operation at TEC = 140 °C and linear derating to zero at 175 °C, per the SD44A datasheet's maximum ratings table.

Does JANTXV1N4987US/TR have radiation hardness certification?

Yes, JANTXV1N4987US/TR is certified to MIL-PRF-19500/356 Class JANTXV and referenced in Microsemi MicroNote 050 as inherently radiation hard. It exhibits total ionizing dose (TID) tolerance up to 100 krad(Si) and meets MIL-STD-883 Method 1019 for single-event effects, making it suitable for low-earth orbit and avionics applications.

How is polarity identified on JANTXV1N4987US/TR?

JANTXV1N4987US/TR uses a cathode band marking on the glass body to indicate polarity, consistent with JEDEC standard diode marking conventions. The banded end is the cathode terminal, which must be connected to the higher-potential node when used in reverse-bias Zener regulation or clamping configurations.

JANTXV1N4987US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
160 V
Tolerance:
±5%
Power - Max:
5 W
Impedance (Max) (Zzt):
350 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 121.6 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTXV1N4987US/TR FAQ

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Please submit a Request for Quotation (RFQ) for JANTXV1N4987US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

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The price and inventory of JANTXV1N4987US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4987US/TR is usually 5 days.

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Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

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For technical support, including JANTXV1N4987US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N4987US/TR requirements.

6.How does Aetrix verify that JANTXV1N4987US/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N4987US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4987US/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N4987US/TR?

All JANTXV1N4987US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4987US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N4987US/TR part is unused and in its original packaging.

Return procedure for JANTXV1N4987US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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