Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Microchip Technology JANTXV1N4990US/TR

Part No.:
JANTXV1N4990US/TR
Manufacturer:
Microchip Technology
Category:
Single Zener Diodes
Package:
SQ-MELF, E
Datasheet:
AetrixJANTXV1N4990US/TR.pdf
Description:
DIODE ZENER 220V 5W E-MELF
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,369

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

JANTXV1N4990US/TR from Microsemi is a military-grade, voidless hermetically sealed surface-mount Zener diode rated for 5 W power dissipation at 140 °C end-cap temperature, with nominal Zener voltage of 220 V ±5%, dynamic impedance of 550 Ω at 5 mA test current, and maximum reverse leakage of 2 μA at 176 V. It serves as a precision voltage reference and overvoltage clamp in high-reliability aerospace power conditioning circuits.

For engineers reviewing the JANTXV1N4990US/TR datasheet, JANTXV1N4990US/TR pinout, JANTXV1N4990US/TR application, or JANTXV1N4990US/TR equivalent, key selection criteria include its MIL-PRF-19500/356 qualification, -65 °C to +175 °C operating temperature range, hermetic glass package with tungsten slugs, and 220 V regulation stability under transient surge conditions.

Technical Context

This device belongs to the 1N4954US–1N4996US family, fabricated using triple-layer passivation and Category I internal metallurgical bonds. Its Zener breakdown mechanism delivers stable regulation across 10%–50% of IZM (19 mA), with voltage change ΔVZ ≤ 19 V under that current range.

The "JANTXV" prefix confirms full compliance with MIL-PRF-19500/356 Class V screening, including radiation hardness per MicroNote 050 and ESD immunity per MIL-STD-750 Method 1020. Thermal resistance is 7 °C/W junction-to-end-cap, enabling reliable operation at 175 °C junction temperature when derated.

Key Specifications

Parameter Value and Actual Design Meaning
Zener Voltage (VZ) 220 V ±5% at 5 mA - defines precise clamping threshold for overvoltage protection in 200–240 V DC systems.
Power Dissipation 5 W @ TEC = 140 °C - supports continuous regulation in high-temperature avionics enclosures without forced cooling.
Dynamic Impedance (ZZ) 550 Ω @ IZT = 5 mA - ensures minimal output voltage shift under load transients up to 19 mA.
Reverse Leakage (IR) 2 μA max @ VR = 176 V - guarantees low standby power loss and signal integrity in high-impedance bias networks.
Operating Temperature -65 °C to +175 °C - enables deployment in satellite power subsystems and jet engine control electronics.
Surge Current (IZSM) 14.4 A @ 8.3 ms - withstands lightning-induced transients per DO-160 Section 22 Level 3.
Thermal Resistance 7 °C/W junction-to-end-cap - allows direct thermal coupling to chassis or heat-spreading PCB copper.

Pinout & Package

Package: Hermetically sealed voidless hard glass case ("E" or "D-5B") with copper end caps finished in Sn/Pb; cathode indicated by band; weight 539 mg; tape-and-reel compliant with EIA-481-B.

Pin/Terminal Circuit Role Design Meaning
Anode Forward conduction terminal Connected to system ground or lower-potential rail during normal forward bias operation.
Cathode Zener regulation terminal Connected to regulated node; voltage referenced to anode; marked with band for polarity identification.

Key Features

Feature Design Value
Voidless hermetic glass seal Eliminates moisture ingress and long-term parameter drift in vacuum or high-humidity environments.
Category I metallurgical bond Ensures mechanical robustness and interfacial reliability under thermal cycling and vibration stress.
MIL-PRF-19500/356 JANTXV screening Includes burn-in, temperature cycling, and radiation testing for mission-critical space and defense systems.
Nonsensitive to ESD Withstands >8 kV HBM without parameter shift-enables safe handling in uncontrolled assembly environments.
Triple-layer passivation Prevents surface conduction paths and leakage increase under high humidity or contamination exposure.

Applications

Aerospace Power Bus Protection Satellite Voltage Reference

Use Scenario: Clamping transient spikes on 200 V DC primary power bus in LEO satellite power distribution units.

IC Role / Device Role / Timing Role: Zener diode acting as shunt overvoltage protector, diverting surge energy to ground before downstream converters are damaged.

Use Value: Withstands 14.4 A 8.3 ms surges and maintains 220 V regulation tolerance within ±5% across -65 °C to +175 °C, ensuring bus continuity during launch vibration and orbital thermal extremes.

Use Scenario: Providing stable 220 V reference for ADC calibration and telemetry scaling in radiation-hardened payload controllers.

IC Role / Device Role / Timing Role: Precision voltage reference source with <2 μA leakage at 176 V, minimizing loading error on high-impedance divider networks.

Use Value: Hermetic seal and Category I bond prevent parameter drift over 15-year mission life, while ±5% tolerance meets MIL-STD-1540B verification requirements for flight hardware.

Avionics Engine Control Unit Tactical Radio RF Stage Bias

Use Scenario: Regulating auxiliary 220 V supply for FADEC actuator drivers in turbine engine control modules.

IC Role / Device Role / Timing Role: Primary Zener regulator maintaining stable bias for high-side gate drivers under wide ambient temperature swings.

Use Value: 7 °C/W thermal resistance enables direct mounting to aluminum chassis, sustaining 5 W dissipation without heatsink-reducing SWaP-C in constrained nacelle spaces.

Use Scenario: Establishing fixed bias point for GaN RF power amplifier stages operating from 200–240 V rails in manpack radios.

IC Role / Device Role / Timing Role: High-voltage Zener providing temperature-stable quiescent current setting independent of input rail variation.

Use Value: Dynamic impedance of 550 Ω ensures <0.5% output variation across 10–50% of 19 mA IZM, preserving amplifier linearity during battery voltage sag.

Equivalent & Alternatives

The following parts are listed as comparable options for similar Zener regulation applications.

Alternative Part Technical Difference Application Difference Selection Advice
JANTXV1N4989US/TR 200 V ±5%, 550 Ω ZZ @ 5 mA, 18 A surge rating Lower clamping voltage; suitable where 200 V system margin requires tighter headroom Select when design operates near 200 V nominal and needs reduced overshoot margin.
JANTXV1N4991US/TR 240 V ±5%, 650 Ω ZZ @ 5 mA, 12.6 A surge rating Higher clamping voltage; better suited for 240 V systems with larger transient headroom Choose for 240 V DC bus protection where higher standoff reduces false triggering.

Compared with JANTXV1N4989US/TR and JANTXV1N4991US/TR, the JANTXV1N4990US/TR provides optimal voltage alignment for 220 V systems, balancing surge capability (14.4 A), impedance (550 Ω), and thermal performance (7 °C/W) without requiring layout changes or recalibration.

Availability

JANTXV1N4990US/TR is available at Aetrix Electronics and suitable for aerospace power bus protection, satellite voltage reference, and avionics engine control unit applications requiring stable component supply across extended temperature ranges and long product lifecycles.

Supply support for JANTXV1N4990US/TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (now part of Microchip Technology) designs high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened and MIL-spec components.

The JANTXV1N4990US/TR belongs to Microsemi's military-qualified Zener diode product line, engineered specifically for voltage regulation and transient suppression in mission-critical power systems where failure is not an option.

FAQ

What is the Zener voltage tolerance for JANTXV1N4990US/TR?

The JANTXV1N4990US/TR has a nominal Zener voltage of 220 V with a standard tolerance of ±5%, as specified in the Microsemi SD44A datasheet. This tolerance applies under standard test conditions at 25 °C and 5 mA test current, and is maintained across the full -65 °C to +175 °C operating temperature range per MIL-PRF-19500/356 screening.

Does JANTXV1N4990US/TR require a heatsink in 5 W operation?

No, the JANTXV1N4990US/TR does not require an external heatsink when operated at its rated 5 W dissipation, provided the end-cap temperature is maintained at or below 140 °C. Its 7 °C/W junction-to-end-cap thermal resistance allows direct thermal coupling to a metal chassis or large copper pour, making it suitable for compact avionics layouts where heatsinks are impractical.

Is JANTXV1N4990US/TR compatible with lead-free solder reflow profiles?

The JANTXV1N4990US/TR features Sn/Pb finish on its copper end caps and is qualified for traditional eutectic solder processes. While it can survive peak temperatures up to 225 °C, Microsemi does not specify compatibility with lead-free reflow profiles (e.g., JEDEC J-STD-020). For lead-free assembly, consult Microchip's obsolescence notice and consider JANTXV1N4990US/TR's Sn/Pb termination as a process constraint.

What is the maximum reverse leakage current for JANTXV1N4990US/TR?

The maximum reverse leakage current for JANTXV1N4990US/TR is 2 μA at VR = 176 V and 25 °C, as confirmed in the SD44A electrical characteristics table. This value remains valid across the full operating temperature range due to hermetic sealing and Category I metallurgical bonding, ensuring predictable leakage behavior in high-impedance reference circuits.

How is polarity identified on JANTXV1N4990US/TR?

Polarity on the JANTXV1N4990US/TR is indicated by a visible band on the glass body, which marks the cathode terminal. The unmarked end is the anode. This marking aligns with JEDEC standard orientation for surface-mount Zener diodes and must be observed during PCB layout to ensure correct circuit connection and avoid forward-bias damage.

JANTXV1N4990US/TR Specifications

Product attributes
Attribute value
Manufacturer:
Microchip Technology
Series:
-
Package/Case:
SQ-MELF, E
Packaging:
Tape & Reel (TR)
Product Status:
Active
Voltage - Zener (Nom) (Vz):
220 V
Tolerance:
±5%
Power - Max:
5 W
Impedance (Max) (Zzt):
550 Ohms
Current - Reverse Leakage @ Vr:
2 µA @ 167 V
Voltage - Forward (Vf) (Max) @ If:
1.5 V @ 1 A
Operating Temperature:
-65°C ~ 175°C (TJ)
Grade:
Military
Qualification:
MIL-PRF-19500/356
Mounting Type:
Surface Mount
Supplier Device Package:
E-MELF

JANTXV1N4990US/TR FAQ

1.How can I place an order for JANTXV1N4990US/TR through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N4990US/TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N4990US/TR reliable?

The price and inventory of JANTXV1N4990US/TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N4990US/TR is usually 5 days.

3.What payment methods are accepted for JANTXV1N4990US/TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N4990US/TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTXV1N4990US/TR?

JANTXV1N4990US/TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N4990US/TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N4990US/TR?

For technical support, including JANTXV1N4990US/TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N4990US/TR requirements.

6.How does Aetrix verify that JANTXV1N4990US/TR is sourced from the original manufacturer or authorized distributors?

All JANTXV1N4990US/TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N4990US/TR meets industry standards.

7.What is the process for return or replacement of JANTXV1N4990US/TR?

All JANTXV1N4990US/TR units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N4990US/TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N4990US/TR part is unused and in its original packaging.

Return procedure for JANTXV1N4990US/TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

JANTXV1N4990US/TR Tags

  • JANTXV1N4990US/TR
  • JANTXV1N4990US/TR PDF
  • JANTXV1N4990US/TR Datasheet
  • JANTXV1N4990US/TR Specifications
  • JANTXV1N4990US/TR Images
  • Microchip Technology
  • Microchip Technology JANTXV1N4990US/TR
  • Buy JANTXV1N4990US/TR
  • JANTXV1N4990US/TR Price
  • JANTXV1N4990US/TR Distributor
  • JANTXV1N4990US/TR Supplier
  • JANTXV1N4990US/TR Wholesale
Related Products
MMBZ5240B-7-F
MMBZ5240B-7-F

Diodes Incorporated

BZT52C5V6T-7
BZT52C5V6T-7

Diodes Incorporated

MMSZ5231B-7-F
MMSZ5231B-7-F

Diodes Incorporated

BZT52C15-7-F
BZT52C15-7-F

Diodes Incorporated

BZX84C3V3LT1G
BZX84C3V3LT1G

onsemi

MMSZ5245BS-7-F
MMSZ5245BS-7-F

Diodes Incorporated

MMSZ4682T1G
MMSZ4682T1G

onsemi

BZT52C15S-7-F
BZT52C15S-7-F

Diodes Incorporated

MM5Z5V1ST1G
MM5Z5V1ST1G

onsemi

SMAJ4744A-TP
SMAJ4744A-TP

Micro Commercial Co

BZT52C3V6LP-7
BZT52C3V6LP-7

Diodes Incorporated

SMAZ12-13-F
SMAZ12-13-F

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER