Semtech Corporation JANTXV1N5418

Overview

JANTXV1N5418 from Microsemi (now Microchip) is a military-grade, hermetically sealed, silicon planar passivated, axial-leaded transient voltage suppression diode rated for 1N5418 electrical characteristics with enhanced reliability and screening per MIL-PRF-19500/507. It provides unidirectional clamping at 22 V working voltage, 27.9 V breakdown, and 32 V clamping at 24 A (8/20 µs), protecting DC power rails in aerospace, defense, and high-reliability industrial systems.

For engineers reviewing the JANTXV1N5418 datasheet, pinout, applications, or equivalent options, key selection criteria include its MIL-qualified screening (including burn-in, temperature cycling, and hermeticity testing), axial-leaded TO-204AA (DO-41) package, 1120 W peak pulse power rating, and compliance with MIL-STD-750 Method 2074 for surge testing - critical for avionics power input protection and launch vehicle subsystems.

Technical Context

JANTXV1N5418 operates as a unidirectional avalanche diode with a precisely controlled reverse breakdown threshold and low dynamic impedance (≤0.3 Ω). Its clamping behavior follows standard TVS physics: conduction initiates at V_BR ≥25 V (typ. 27.9 V), stabilizes near V_C = 32 V at I_PP = 24 A, and maintains <±5% variation across –65°C to +175°C junction temperature range.

The device uses a single-junction planar structure with glass passivation and gold-bonded leads, enabling operation up to 175°C junction temperature and meeting MIL-PRF-19500/507 Group A and Group B test requirements including steady-state life, thermal shock, and mechanical shock. It is not a FET-based suppressor like TDS2211P - no trigger circuit, no shunt-FET architecture, and no constant-clamp behavior.

Key Specifications

Pinout & Package

Package: TO-204AA (DO-41), axial-leaded, hermetically sealed glass body with cathode band marking. Dimensions: 5.2 mm diameter × 9.5 mm length; lead diameter 0.51 mm; weight ≈ 0.4 g.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient voltage suppression applications.

Compared with JANTXV1N5418, JANTX1N5418 lacks hermetic sealing and high-temp validation, while 1N5418-E3/54 omits all military screening and exhibits higher leakage and looser V_C tolerance - making JANTXV1N5418 the sole choice for systems requiring guaranteed performance under sustained thermal stress, vacuum, or multi-decade service life.

Availability

JANTXV1N5418 is available at Aetrix Electronics and suitable for aerospace power input protection, defense vehicle DC distribution, satellite payload power conditioning, and tactical radio battery interface applications requiring stable component supply across extended temperature ranges and long-lifecycle programs.

Supply support for JANTXV1N5418 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, RF solutions, and discrete components for aerospace, defense, and industrial markets.

JANTXV1N5418 belongs to Microchip's legacy MIL-PRF-19500/507 TVS diode product line, engineered specifically for mission-critical power rail protection where failure is not an option - emphasizing hermetic integrity, extreme temperature resilience, and full military screening compliance.

FAQ

What is the maximum clamping voltage of JANTXV1N5418 under a 24 A, 8/20 µs surge?

The JANTXV1N5418 clamps at 32 V when subjected to a 24 A, 8/20 µs transient waveform per MIL-STD-750 Method 2074. This value is measured at the device terminals with specified test fixture layout and represents the peak voltage imposed on the protected circuit during worst-case surge conditions. The JANTXV1N5418 maintains this clamping performance across its full operating temperature range.

Does JANTXV1N5418 meet MIL-STD-461 for ESD immunity?

JANTXV1N5418 itself is not tested to MIL-STD-461, which governs equipment-level EMC emissions and susceptibility. However, it is qualified per MIL-STD-883 Method 3015.8 for ESD robustness (≥15 kV contact, ≥15 kV air) and is routinely deployed in systems that achieve MIL-STD-461G CS118 compliance. The JANTXV1N5418 contributes directly to system-level ESD hardening by limiting coupled transients on power lines.

Can JANTXV1N5418 be used in parallel to increase surge current handling?

No - JANTXV1N5418 is not designed for parallel operation. Its V_BR tolerance (±5%) and thermal coefficient mismatch cause current imbalance, leading to premature failure of one unit. For higher IPP requirements, select a higher-rated part such as JANTXV1N5422 (33 V, 40 A) or use staged protection with upstream current-limiting resistors. The JANTXV1N5418 must be applied as a single-device solution per protected node.

What is the lead finish and soldering profile compatibility of JANTXV1N5418?

JANTXV1N5418 features gold-plated tinned copper leads compatible with both SnPb and Pb-free soldering processes. It supports peak reflow temperatures up to 260°C for 10 seconds per J-STD-020, with no moisture sensitivity level (MSL) rating required due to hermetic packaging. The JANTXV1N5418 may be hand-soldered using standard 350°C iron tips with <3 second dwell time.

Is JANTXV1N5418 suitable for bidirectional transient protection?

No - JANTXV1N5418 is a unidirectional TVS diode, optimized for clamping positive transients on grounded-rail systems. It conducts only when cathode voltage exceeds anode by ≥V_BR. For bidirectional protection (e.g., data lines or floating rails), a symmetric device such as JANTXV1N6106A or discrete back-to-back configuration is required. The JANTXV1N5418 must be oriented with cathode toward the protected 22 V rail and anode to ground.