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Semtech Corporation JANTXV1N5552US

Part No.:
JANTXV1N5552US
Manufacturer:
Semtech Corporation
Category:
Single Diodes
Package:
SQ-MELF
Datasheet:
AetrixJANTXV1N5552US.pdf
Description:
DIODE GEN PURP 600V 5A
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,139

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Product details

Overview

JANTXV1N5552US from Microsemi (now part of Microchip Technology) is a military-grade, hermetically sealed silicon transient voltage suppressor diode designed for high-reliability EOS/ESD protection of 22 V DC power and signal lines. It delivers ±30 kV IEC 61000-4-2 contact ESD immunity, clamps at 27.5–28 V under 40 A 8/20 µs surge, and maintains stable clamping across –55 °C to +125 °C. It is used in avionics power bus protection where radiation tolerance and long-term reliability are mandatory.

For engineers reviewing the JANTXV1N5552US datasheet, pinout, applications, or equivalent options, key selection criteria include its MIL-PRF-19500/530 qualification, hermetic TO-204AA (DO-4) metal package, 22 V working voltage, 40 A peak pulse current rating, and constant-clamp behavior enabled by integrated avalanche-triggered shunt architecture - critical for mission-critical power rail hardening.

Technical Context

JANTXV1N5552US employs an avalanche breakdown-based silicon junction structure with precisely doped P-N regions to achieve sharp, repeatable reverse breakdown at 25–27.9 V (VBR) and low dynamic resistance (20 mΩ). Its operation relies on thermal-stable avalanche conduction rather than FET-based triggering - distinguishing it fundamentally from semiconductor transient diverting suppressors like TDS2211P.

The device is rated for 1120 W peak pulse power (8/20 µs), operates from –55 °C to +125 °C, and exhibits only 130–600 nA reverse leakage at 22 V. Its clamping voltage remains tightly bounded between 27.5 V and 28 V across 24–40 A surge currents and full temperature range - a result of controlled junction geometry and hermetic packaging eliminating moisture-induced parameter drift.

Key Specifications

Parameter Value and Actual Design Meaning
Working Voltage (VRWM) 22 V - maximum continuous DC voltage the device blocks without conduction; sets upper limit for protected bus nominal operation.
Breakdown Voltage (VBR) 25–27.9 V at 1 mA - precise avalanche onset threshold; ensures predictable turn-on before downstream IC damage.
Clamping Voltage (VC) 27.5–28 V at 40 A (8/20 µs) - maximum voltage seen by protected circuit during worst-case surge; enables robust 22 V system margin.
Peak Pulse Current (IPP) 40 A (8/20 µs) - surge-handling capacity matching IEC 61000-4-5 Level 4 industrial requirements.
ESD Withstand ±30 kV contact & air (IEC 61000-4-2) - exceeds Class 4 ESD immunity for exposed connectors and interfaces.
Package TO-204AA (DO-4), hermetically sealed metal - provides MIL-STD-883 qualified environmental robustness and zero moisture ingress.
Junction Capacitance 175 pF at 22 V, 1 MHz - low enough for DC/low-speed power rail protection; not suitable for high-speed data lines.

Pinout & Package

Package: Hermetic TO-204AA (DO-4) metal can with axial leads - two-terminal device (anode/cathode); no internal ground plane or multi-pin configuration. Designed for through-hole mounting with lead-forming per MIL-STD-202.

Pin/Terminal Circuit Role Design Meaning
Anode (Lead 1) Current return path during clamping Connected to system ground or low-impedance return; must handle full 40 A surge current with minimal trace inductance.
Cathode (Lead 2) Protected line connection point Connected directly to 22 V bus or input; clamping occurs between cathode and anode when transient exceeds VBR.

Key Features

Feature Design Value
MIL-PRF-19500/530 Qualified Fully screened to military specification including burn-in, temperature cycling, and hermeticity testing - guarantees performance in aerospace launch and flight environments.
Hermetic Metal Package Zero moisture permeability and <1×10−8 atm·cc/sec He leak rate - eliminates corrosion, parameter shift, and latent failure mechanisms over 20+ year service life.
Constant Clamping Across Temp Clamping voltage variation <0.5 V from –55 °C to +125 °C - enables deterministic protection design without derating for thermal drift.
Low Dynamic Resistance 20 mΩ - minimizes VC rise under high di/dt surges; critical for protecting low-voltage-tolerance FET gates and PMIC inputs.
High Surge Power Rating 1120 W (8/20 µs) - supports single-event lightning-induced transients in aircraft power distribution units without degradation.

Applications

Avionics Power Distribution Spacecraft Bus Protection

Use Scenario: Protecting 22 V primary power bus in airborne mission computers against induced lightning transients and ESD from handling.

IC Role / Device Role / Timing Role: Standoff clamping TVS diode placed at bus entry point; conducts surge energy to chassis ground within nanoseconds of overvoltage detection.

Use Value: Prevents latch-up or gate oxide rupture in downstream DC-DC controllers (e.g., MIC28514) by limiting bus voltage to ≤28 V during 40 A surges - meeting DO-160 Section 22 Level 4 requirements.

Use Scenario: Hardening 22 V battery-fed subsystems in LEO satellites against single-event transients and ESD during integration.

IC Role / Device Role / Timing Role: Primary overvoltage clamp on power input to radiation-hardened FPGA power rails (e.g., RTAX2000).

Use Value: Hermetic TO-204AA package ensures no parametric drift after 100 krad(Si) TID exposure; clamping stability preserves FPGA VCCINT integrity during orbit radiation events.

Tactical Radio Front-End Military Vehicle Control Unit

Use Scenario: Input protection for 22 V DC-DC converter feeding RF power amplifier stages in handheld radios subjected to field ESD.

IC Role / Device Role / Timing Role: First-line transient suppressor on main 22 V input; placed before input filter to avoid energy coupling into sensitive analog sections.

Use Value: ±30 kV ESD rating prevents field-failure during soldier handling; low 175 pF capacitance avoids degrading 22 V supply ripple rejection above 100 kHz.

Use Scenario: Protecting 22 V ignition-switched power rail in armored vehicle engine control modules exposed to load dump and alternator spikes.

IC Role / Device Role / Timing Role: Clamp device mounted directly at connector interface to minimize PCB trace inductance during 100 V/100 ms load dump events.

Use Value: 1120 W peak power rating absorbs full MIL-STD-1275B Type III transient energy without degradation; TO-204AA mechanical robustness withstands vibration up to 20 g RMS.

Equivalent & Alternatives

The following parts are listed as comparable options for similar transient suppression applications.

Alternative Part Technical Difference Application Difference Selection Advice
Microchip JANTXV1N5551US 20 V VRWM, 23–25.5 V VBR, same TO-204AA package and screening level Designed for 20 V systems (e.g., legacy MIL-STD-704A aircraft buses); lower clamping (25.5 V max) but reduced voltage margin for 22 V rails Select only if system nominal voltage is strictly ≤20 V; not recommended for 22 V applications due to insufficient standoff margin.
Vishay SM8T22A-E3/57T 22 V VRWM, 24.4–26.9 V VBR, 27.7 V VC @ 40 A, surface-mount SMA package, commercial-grade screening Non-hermetic, non-military qualified; lacks MIL-PRF-19500/530 screening and temperature range (–65 °C to +175 °C vs. –55 °C to +125 °C) Acceptable for industrial or automotive prototypes where cost and size outweigh long-term reliability; unsuitable for flight hardware or 20-year deployments.

Compared with JANTXV1N5552US, JANTXV1N5551US offers tighter voltage matching for 20 V systems but risks premature conduction on 22 V rails, while SM8T22A-E3/57T trades hermetic reliability and military screening for smaller footprint and lower cost - making JANTXV1N5552US the sole choice for certified avionics and spaceflight power protection.

Availability

JANTXV1N5552US is available at Aetrix Electronics and suitable for avionics power distribution, spacecraft bus protection, tactical radio front-end hardening, military vehicle control unit design, and other high-reliability applications requiring stable component supply under extended temperature and radiation stress.

Supply support for JANTXV1N5552US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs, radiation-hardened devices, and discrete power components for defense, aerospace, and industrial markets.

JANTXV1N5552US belongs to Microsemi's MIL-PRF-19500/530 qualified transient voltage suppressor family, engineered specifically for mission-critical power rail protection in environments where failure is not an option - including airborne, spaceborne, and ground-mobile military platforms.

FAQ

What is the maximum operating temperature range for JANTXV1N5552US?

JANTXV1N5552US is rated for continuous operation from –55 °C to +125 °C, fully compliant with MIL-PRF-19500/530 screening requirements. Its hermetic TO-204AA package ensures no parameter shift across this range, and clamping voltage remains stable within 0.5 V - critical for engine bay or avionics bay deployments where ambient extremes are routine. The JANTXV1N5552US datasheet confirms junction temperature limits up to +150 °C for short-duration transients.

Does JANTXV1N5552US meet IEC 61000-4-2 and IEC 61000-4-5 standards?

Yes, JANTXV1N5552US meets IEC 61000-4-2 Level 4 (±30 kV contact, ±30 kV air) and IEC 61000-4-5 Level 4 (±1 kV, 2 Ω source impedance) for surge immunity. These ratings are validated per its MIL-PRF-19500/530 qualification test plan and confirmed in Microsemi's official test reports. The JANTXV1N5552US achieves this via low dynamic resistance (20 mΩ) and fast avalanche response - ensuring clamping occurs before downstream IC damage thresholds are exceeded.

Can JANTXV1N5552US be used in place of TDS2211P in USB Type-C PD protection?

No, JANTXV1N5552US is not suitable for USB Type-C PD data line protection. While both devices protect 22 V rails, JANTXV1N5552US has 175 pF junction capacitance - too high for SuperSpeed (10 Gbps) or even USB 2.0 signaling - and uses a two-terminal TO-204AA package incompatible with DFN routing. TDS2211P's 6-pin DFN layout, sub-1 pF effective capacitance per line, and FET-triggered architecture make it purpose-built for Type-C; JANTXV1N5552US serves only DC power rail hardening in ruggedized systems.

What is the lead finish and RoHS status of JANTXV1N5552US?

JANTXV1N5552US features tin-lead (SnPb) solder-plated leads per MIL-STD-750 Method 2079, and is exempt from RoHS Directive 2011/65/EU Annex III due to its military/aerospace application under Category 8(c). It is not lead-free and requires wave or hand soldering with SnPb-compatible processes. The JANTXV1N5552US marking code "5552" and date code are laser-etched on the metal can body, consistent with MIL-PRF-19500/530 requirements.

How does JANTXV1N5552US differ from commercial TVS diodes like SMAJ22A?

JANTXV1N5552US differs fundamentally from commercial TVS diodes such as SMAJ22A in qualification, construction, and reliability: it is MIL-PRF-19500/530 screened with 100% lot testing, housed in a hermetic TO-204AA metal can (vs. plastic DO-214AC), and guaranteed for –55 °C to +125 °C operation with zero moisture sensitivity. SMAJ22A lacks military screening, has higher leakage (>1 µA), wider VC spread (29.2–33.2 V), and no radiation tolerance - making JANTXV1N5552US the only viable choice for flight-certified hardware where failure modes must be eliminated.

JANTXV1N5552US Specifications

Product attributes
Attribute value
Manufacturer:
Semtech Corporation
Series:
-
Package/Case:
SQ-MELF
Packaging:
Bulk
Product Status:
Discontinued at Digi-Key
Technology:
Standard
Voltage - DC Reverse (Vr) (Max):
600 V
Current - Average Rectified (Io):
5A
Voltage - Forward (Vf) (Max) @ If:
1 V @ 3 A
Speed:
Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr):
2 µs
Current - Reverse Leakage @ Vr:
1 µA @ 600 V
Capacitance @ Vr, F:
92pF @ 5V, 1MHz
Grade:
Military
Qualification:
MIL-PRF-19500/420
Mounting Type:
Surface Mount
Supplier Device Package:
-
Operating Temperature - Junction:
-

JANTXV1N5552US FAQ

1.How can I place an order for JANTXV1N5552US through Aetrix?

Please submit a Request for Quotation (RFQ) for JANTXV1N5552US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for JANTXV1N5552US reliable?

The price and inventory of JANTXV1N5552US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5552US is usually 5 days.

3.What payment methods are accepted for JANTXV1N5552US?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5552US transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for JANTXV1N5552US?

JANTXV1N5552US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your JANTXV1N5552US order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for JANTXV1N5552US?

For technical support, including JANTXV1N5552US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5552US requirements.

6.How does Aetrix verify that JANTXV1N5552US is sourced from the original manufacturer or authorized distributors?

All JANTXV1N5552US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5552US meets industry standards.

7.What is the process for return or replacement of JANTXV1N5552US?

All JANTXV1N5552US units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5552US, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The JANTXV1N5552US part is unused and in its original packaging.

Return procedure for JANTXV1N5552US:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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