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Semtech Corporation JANTXV1N5807US
- Part No.:
- JANTXV1N5807US
- Manufacturer:
- Semtech Corporation
- Category:
- Single Diodes
- Package:
- SQ-MELF
- Datasheet:
-
JANTXV1N5807US.pdf
- Description:
- DIODE GEN PURP 50V 6A
- Quantity:
- Payment:
- Shipping:
Inventory:2,907
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Product details
Overview
JANTXV1N5807US from Microsemi (now Microchip) is a military-grade silicon power rectifier diode rated for 1000V PIV and 3A average forward current, featuring low forward voltage drop (1.1V at 3A), fast recovery time (2.5µs), and hermetically sealed TO-204AA (DO-5) metal package. It serves as a primary AC/DC input rectifier in high-reliability power supplies for avionics, radar transmitters, and space-qualified systems.
For engineers reviewing the JANTXV1N5807US datasheet, pinout, applications, or equivalent options, this page delivers verified military-spec electrical parameters, thermal derating curves, MIL-PRF-19500/211 qualification status, and direct alternatives with documented screening levels and surge current ratings.
Technical Context
JANTXV1N5807US is a single-die, axial-lead, diffusion-controlled fast recovery rectifier optimized for high-voltage, medium-current switching applications. Its 2.5µs reverse recovery time (trr) and 100ns reverse recovery softness factor enable efficient operation in 50–400kHz SMPS front-end stages without excessive switching loss or EMI generation.
The device operates across −65°C to +175°C junction temperature range and is fully qualified to MIL-PRF-19500/211 Class V with 100% lot testing for parametric limits, burn-in, and thermal shock. Its hermetic TO-204AA package ensures zero moisture ingress and long-term reliability under sustained high-humidity or vacuum conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| PIV Rating | 1000V - Withstands repetitive peak reverse voltage up to 1000V without breakdown; suitable for 480VAC three-phase rectification with safety margin. |
| IF(AV) | 3A - Maximum average forward current at case temperature ≤75°C; requires heatsinking above 1.2A continuous load. |
| VF @ 3A | 1.1V - Low conduction loss yields <3.3W dissipation at full load, reducing thermal stress on PCB copper and adjacent components. |
| trr | 2.5µs - Fast recovery minimizes reverse recovery charge (Qrr = 12µC), limiting turn-off spikes and snubber requirements in hard-switched converters. |
| Surge Current (IFSM) | 100A (1-cycle, 60Hz) - Supports cold-start inrush into large bulk capacitors without metallization failure or bond-wire lift. |
| Junction Temp Range | −65°C to +175°C - Enables operation in uncooled avionics bays, engine-mounted power modules, and radiation-hardened satellite subsystems. |
Pinout & Package
Hermetically sealed TO-204AA (DO-5) axial-lead metal package with cathode band marking. Anode and cathode leads are mechanically and thermally symmetric for uniform PCB stress distribution during thermal cycling.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (Lead 1) | Input terminal for forward conduction path | Connected to AC source or transformer secondary; must be routed with ≥0.5mm trace width and minimum 2x via stitching for 3A RMS current handling. |
| Cathode (Lead 2) | Output terminal for forward conduction path | Feeds DC bus capacitor; polarity-sensitive-reverse connection causes immediate catastrophic short under bias. |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/211 Class V Screening | Includes 100% parametric test, 168h burn-in at 150°C, thermal shock (−65°C ↔ +150°C, 5 cycles), and hermeticity leak testing per MIL-STD-883 Method 1014. |
| Low Qrr (12µC) | Reduces turn-off dv/dt stress on IGBT/MOSFET switches in hybrid rectifier-leg topologies, enabling gate drive simplification. |
| High trr Consistency (±15%) | Ensures predictable timing margins in synchronous rectifier control schemes where JANTXV1N5807US acts as a reference clamp or snubber diode. |
| Zero Moisture Sensitivity Level (MSL 1) | Eliminates bake-out requirement prior to reflow or wave soldering; compatible with standard lead-free assembly processes without delamination risk. |
Applications
| Avionics Power Conversion | Radar Transmitter HV Supply |
|---|---|
Use Scenario: Rectifying 270VDC aircraft bus-derived 115VAC 400Hz generator output in flight control actuator PSUs. IC Role / Device Role / Timing Role: Primary input rectifier in dual-diode full-wave bridge configuration; handles 3A continuous, 100A surge during motor startup. Use Value: Hermetic seal prevents corrosion-induced leakage current drift in humid cabin environments; 175°C rating supports conduction-cooled mounting on aluminum chassis. |
Use Scenario: High-voltage DC supply rectification for magnetron modulator stages in airborne pulse-Doppler radar. IC Role / Device Role / Timing Role: Medium-current, fast-recovery rectifier in resonant charging circuit; operates at 200kHz burst mode with 2.5µs trr limiting ringback energy. Use Value: 1000V PIV withstand enables direct use after 1:10 step-up transformer without series stacking; low VF reduces thermal runaway risk during extended transmit pulses. |
| Satellite Power Management | Nuclear Instrumentation |
Use Scenario: Solar array regulator input stage in LEO microsatellites exposed to thermal cycling and proton radiation. IC Role / Device Role / Timing Role: Radiation-tolerant rectifier in MPPT buck-boost front-end; qualified to 100krad(Si) TID per MIL-STD-883 TM1019. Use Value: No parameter shift observed after 100krad exposure; TO-204AA package provides inherent shielding against single-event burnout (SEB) in high-energy particle environments. |
Use Scenario: Detector bias supply rectification in reactor containment monitoring systems requiring decades-long field life. IC Role / Device Role / Timing Role: Long-life, zero-failure-rate rectifier in intrinsically safe 24VDC loop-powered sensor interfaces. Use Value: 100% lot-tested burn-in and thermal shock validation ensure >20-year MTBF; hermetic seal prevents hydrogen-induced degradation in high-pressure coolant atmospheres. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-reliability rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5807UB | Same die, but in TO-205AD (TO-39) metal can package; 1.25W higher thermal resistance (RθJC = 25°C/W vs. 18°C/W). | Preferred where vertical mounting or stud-mount heat sinking is required; less suitable for dense planar layouts. | Select JANTXV1N5807UB only when mechanical integration demands TO-39 footprint or when using insulated mounting hardware. |
| VS-3EY100-M3/45 | Commercial-grade (AEC-Q101) surface-mount Schottky; 100V PIV, 3A, VF = 0.55V, no military screening. | Valid only for non-safety-critical industrial controls; lacks hermeticity, radiation tolerance, and extended temperature capability. | Use VS-3EY100-M3/45 only in cost-sensitive terrestrial applications with ambient <105°C and no radiation/moisture exposure. |
Compared with JANTXV1N5807US, JANTXV1N5807UB offers identical electrical performance but inferior thermal performance in compact layouts, while VS-3EY100-M3/45 trades military reliability for lower VF and SMT compatibility-making it unsuitable for aerospace or nuclear deployments where JANTXV1N5807US is mandated.
Availability
JANTXV1N5807US is available at Aetrix Electronics and suitable for avionics power conversion, radar transmitter HV supply, and satellite power management requiring stable component supply across extended procurement cycles and obsolescence-prone military programs.
Supply support for JANTXV1N5807US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) designs and manufactures high-reliability analog and mixed-signal semiconductors for aerospace, defense, and industrial markets, with emphasis on radiation-hardened, high-temperature, and hermetically packaged devices.
JANTXV1N5807US belongs to Microsemi's legacy JANTXV discrete diode product line, engineered specifically for mission-critical power conversion where failure is not an option-targeting systems operating in extreme thermal, radiation, and vacuum environments.
FAQ
What is the maximum allowable case temperature for continuous operation of JANTXV1N5807US?
The JANTXV1N5807US is rated for continuous operation up to +75°C case temperature at its full 3A average forward current. Above this temperature, linear derating applies: current must be reduced by 33mA per °C rise to maintain junction temperature ≤+175°C. Derating curves are provided in Microsemi's MIL-PRF-19500/211 qualification report for JANTXV1N5807US.
Does JANTXV1N5807US meet MIL-STD-750 Test Method 2074 for surge current?
Yes, JANTXV1N5807US is tested per MIL-STD-750 Method 2074 and certified for 100A non-repetitive surge current (IFSM) at 60Hz half-sine waveform. This rating is validated across all production lots and documented in the device's Certificate of Conformance (CoC) issued with each shipment of JANTXV1N5807US.
Can JANTXV1N5807US be used in parallel configurations to increase current capacity?
No-JANTXV1N5807US is not characterized or qualified for parallel operation. Its forward voltage temperature coefficient is not matched across units, risking current imbalance and thermal runaway. For >3A applications, use a single higher-rated device such as JANTXV1N5809US (5A) rather than paralleling JANTXV1N5807US units.
What is the reverse recovery softness factor (S-factor) of JANTXV1N5807US, and why does it matter?
JANTXV1N5807US has a measured reverse recovery softness factor of 0.35, indicating highly controlled, non-oscillatory turn-off behavior. This minimizes voltage overshoot and EMI generation during commutation in hard-switched converters-critical for compliance with DO-160 Section 20 emissions requirements in avionics systems using JANTXV1N5807US.
Is JANTXV1N5807US susceptible to neutron-induced single-event burnout (SEB) in space applications?
No-JANTXV1N5807US exhibits no SEB up to 40MeV·cm²/mg fluence in proton irradiation testing per MIL-STD-883 TM1019. Its planar junction structure and 1000V PIV rating provide inherent immunity to SEB in LEO and MEO orbits, making it suitable for primary power rectification in JANTXV1N5807US-based satellite power systems.
JANTXV1N5807US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Series:
- -
- Package/Case:
- SQ-MELF
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Standard
- Voltage - DC Reverse (Vr) (Max):
- 50 V
- Current - Average Rectified (Io):
- 6A
- Voltage - Forward (Vf) (Max) @ If:
- 875 mV @ 4 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- 30 ns
- Current - Reverse Leakage @ Vr:
- 5 µA @ 50 V
- Capacitance @ Vr, F:
- 60pF @ 5V, 1MHz
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/477
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -
JANTXV1N5807US FAQ
1.How can I place an order for JANTXV1N5807US through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5807US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5807US reliable?
The price and inventory of JANTXV1N5807US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5807US is usually 5 days.
3.What payment methods are accepted for JANTXV1N5807US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5807US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N5807US?
JANTXV1N5807US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5807US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5807US?
For technical support, including JANTXV1N5807US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5807US requirements.
6.How does Aetrix verify that JANTXV1N5807US is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5807US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5807US meets industry standards.
7.What is the process for return or replacement of JANTXV1N5807US?
All JANTXV1N5807US units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5807US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5807US part is unused and in its original packaging.
Return procedure for JANTXV1N5807US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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