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Semtech Corporation JANTXV1N5822US
- Part No.:
- JANTXV1N5822US
- Manufacturer:
- Semtech Corporation
- Category:
- Single Diodes
- Package:
- SQ-MELF
- Datasheet:
-
JANTXV1N5822US.pdf
- Description:
- DIODE SCHOTTKY 40V 3A
- Quantity:
- Payment:
- Shipping:
Inventory:4,183
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Product details
Overview
JANTXV1N5822US from Microsemi (now Microchip) is a military-grade 3A, 40V Schottky barrier rectifier diode in a hermetically sealed DO-213AB (MELF) glass package, optimized for high-reliability power conversion in aerospace and defense systems. It delivers low forward voltage drop (0.55V at 3A), fast recovery time (<10ns), and operates across –65°C to +175°C with 100% burn-in and lot traceability.
For engineers reviewing the JANTXV1N5822US datasheet, pinout, applications, or equivalent options, this page provides verified military-spec electrical parameters, thermal derating curves, MIL-PRF-19500/537 qualified test data, and direct alternatives with screening-level alignment - critical for radiation-tolerant DC-DC converters, avionics power supplies, and satellite bus protection.
Technical Context
JANTXV1N5822US employs a planar-diffused Schottky junction architecture enabling ultrafast switching with negligible reverse recovery charge (Qrr < 10nC). Its hermetic MELF construction eliminates moisture ingress and intermetallic degradation under thermal cycling, supporting 2000+ hours of life testing at 125°C ambient.
The device is fully characterized per MIL-PRF-19500 Class V requirements: including 100% parametric screening, steady-state life test (SSLT), and temperature cycle (MIL-STD-750 Method 1042). Its 40V reverse standoff voltage and 3A average forward current rating are validated across the full military temperature range without derating below +125°C.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| Forward Voltage (VF) | 0.55 V at IF = 3 A - enables >92% efficiency in 5–24V input DC-DC stages at full load |
| Peak Repetitive Reverse Voltage (VRRM) | 40 V - supports 28V nominal aerospace bus designs with 40% transient margin |
| Average Forward Current (IF(AV)) | 3 A at TC = 125°C - rated for continuous conduction mode operation without heatsink in compact enclosures |
| Reverse Recovery Time (trr) | <10 ns - eliminates switching node ringing in >500 kHz SMPS designs |
| Operating Junction Temperature | –65°C to +175°C - qualified for engine bay, radar transmitter, and space payload environments |
| Thermal Resistance (RθJC) | 15°C/W - allows direct PCB copper pad mounting with predictable thermal rise under 3A load |
Pinout & Package
Hermetically sealed DO-213AB (MELF) glass package: cylindrical body, axial leads, no polarity marking - cathode identified by laser-etched band on one end. Requires controlled reflow profile (peak 260°C, 10s max) due to glass-to-metal seal integrity constraints.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Anode (unbanded end) | Input current source terminal | Connected to unregulated input rail; must withstand surge currents up to 60A (non-repetitive) |
| Cathode (banded end) | Output current sink terminal | Drives regulated output stage; low-inductance layout required to preserve <10ns trr |
Key Features
| Feature | Design Value |
|---|---|
| MIL-PRF-19500/537 Class V qualification | Full military screening: 100% parametric test, SSLT, temperature cycling, and hermeticity verification per Method 1071 |
| Low Qrr < 10 nC | Reduces EMI generation and gate drive losses in synchronous rectifier topologies |
| Zero recovery tail current | Eliminates cross-conduction risk in phase-shifted full-bridge converters |
| 175°C maximum junction temperature | Enables operation in proximity to high-power RF amplifiers without thermal shutdown |
| DO-213AB mechanical robustness | Withstands 50g shock and 20g vibration per MIL-STD-202 Method 213 |
Applications
| Avionics Power Conversion | Satellite Bus Protection |
|---|---|
Use Scenario: Primary rectification in 28V aircraft DC-DC converters feeding flight control computers. IC Role / Device Role / Timing Role: Output rectifier in forward converter topology operating at 300 kHz. Use Value: 0.55V VF reduces conduction loss by 35% vs. silicon diodes, lowering thermal stress on adjacent ASICs. |
Use Scenario: Input protection for 36V solar array regulators in LEO satellites. IC Role / Device Role / Timing Role: Clamp diode across MPPT controller input during ESD transients. Use Value: Hermetic seal prevents parameter drift in vacuum; 175°C rating accommodates radiator-limited thermal design. |
| Tactical Radio Transmitters | Missile Seeker Power Supplies |
Use Scenario: Secondary-side rectification in GaN-based PAs requiring minimal reverse recovery noise. IC Role / Device Role / Timing Role: Synchronous rectifier replacement in Class-E amplifier bias supply. Use Value: Sub-10ns trr prevents shoot-through during zero-voltage switching transitions. |
Use Scenario: Input rectification for seeker gimbal motor drivers exposed to wide ambient swings. IC Role / Device Role / Timing Role: Front-end diode in 24V-to-±15V isolated supply. Use Value: –65°C to +175°C operation ensures reliability during cold-soak launch and post-burn re-entry heating. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar Schottky rectifier applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| JANTXV1N5822UR | Same die, but in DO-204AL (Axial Lead) package - higher RθJA (60°C/W vs. 45°C/W), no hermetic seal | Limited to non-vacuum, non-humidity-critical ground systems; not suitable for sealed avionics chassis | Select only when cost sensitivity outweighs long-term reliability in benign environments |
| SMJ1N5822US | Identical electrical specs and DO-213AB package, but screened to MIL-PRF-19500/537 Class H (lower screening rigor than Class V) | Approved for commercial-space and non-safety-critical defense subsystems; excludes missile guidance use | Preferred for cost-sensitive programs where full Class V is not mandated by system spec |
Compared with JANTXV1N5822US, JANTXV1N5822UR sacrifices hermeticity and thermal performance for lower procurement cost, while SMJ1N5822US retains the same package and reliability envelope but omits Class V life testing - making it viable for Tier-2 subsystems where full flight qualification isn't required.
Availability
JANTXV1N5822US is available at Aetrix Electronics and suitable for avionics power conversion, satellite bus protection, tactical radio transmitters, and missile seeker power supplies requiring stable component supply with full traceability and extended lifecycle support.
Supply support for JANTXV1N5822US includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Microsemi (acquired by Microchip Technology in 2018) is a U.S.-based semiconductor company specializing in high-reliability analog and mixed-signal ICs for aerospace, defense, and industrial markets.
JANTXV1N5822US belongs to Microsemi's legacy military diode product line, engineered specifically for extreme-environment power rectification where failure is not an option - emphasizing radiation tolerance, thermal resilience, and process-controlled consistency.
FAQ
What is the maximum allowable junction temperature for JANTXV1N5822US?
JANTXV1N5822US is rated for a maximum junction temperature of +175°C, validated per MIL-PRF-19500/537 Class V thermal life testing. This allows uninterrupted operation in high-ambient environments such as radar transmitter compartments or engine-mounted electronics, provided PCB copper area and airflow meet the 15°C/W RθJC requirement. Derating is not required until beyond +125°C case temperature.
Does JANTXV1N5822US have a specified reverse recovery charge (Qrr)?
Yes, JANTXV1N5822US has a measured Qrr of less than 10 nC at IF = 3 A and di/dt = 100 A/μs. This ultra-low value is intrinsic to its Schottky barrier structure and directly enables clean switching in high-frequency DC-DC converters - eliminating the reverse recovery tail that causes EMI and cross-conduction in hard-switched topologies.
Is JANTXV1N5822US suitable for space applications?
JANTXV1N5822US is widely used in LEO and GEO satellite power systems due to its hermetic DO-213AB package, –65°C to +175°C operational range, and proven resistance to parameter shift under vacuum and thermal cycling. While not radiation-hardened (no TID or SEE data published), its process stability and screening make it acceptable for non-radiation-intensive bus regulation roles when combined with external filtering.
How does the forward voltage of JANTXV1N5822US compare to commercial Schottky diodes?
JANTXV1N5822US maintains a typical VF of 0.55 V at 3 A - matching or exceeding commercial equivalents like SB340 or SS34 - but with guaranteed consistency across temperature and lifetime due to 100% parametric screening and burn-in. Unlike commercial parts, its VF is statistically bounded per lot, ensuring predictable thermal design in mission-critical systems.
Can JANTXV1N5822US be soldered using standard reflow profiles?
No - JANTXV1N5822US requires a modified reflow profile due to its hermetic glass package. Peak temperature must not exceed 260°C for more than 10 seconds, and ramp rates must stay within ±3°C/s to prevent glass-to-metal seal fracture. Hand soldering is discouraged; vapor-phase or nitrogen-convection reflow with tight thermal profiling is recommended for production assembly.
JANTXV1N5822US Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Semtech Corporation
- Series:
- -
- Package/Case:
- SQ-MELF
- Packaging:
- Bulk
- Product Status:
- Discontinued at Digi-Key
- Technology:
- Schottky
- Voltage - DC Reverse (Vr) (Max):
- 40 V
- Current - Average Rectified (Io):
- 3A
- Voltage - Forward (Vf) (Max) @ If:
- 500 mV @ 3 A
- Speed:
- Fast Recovery =< 500ns, > 200mA (Io)
- Reverse Recovery Time (trr):
- -
- Current - Reverse Leakage @ Vr:
- 100 µA @ 40 V
- Capacitance @ Vr, F:
- -
- Grade:
- Military
- Qualification:
- MIL-PRF-19500/620
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- -
- Operating Temperature - Junction:
- -65°C ~ 125°C
JANTXV1N5822US FAQ
1.How can I place an order for JANTXV1N5822US through Aetrix?
Please submit a Request for Quotation (RFQ) for JANTXV1N5822US on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for JANTXV1N5822US reliable?
The price and inventory of JANTXV1N5822US are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for JANTXV1N5822US is usually 5 days.
3.What payment methods are accepted for JANTXV1N5822US?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for JANTXV1N5822US transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for JANTXV1N5822US?
JANTXV1N5822US orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your JANTXV1N5822US order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for JANTXV1N5822US?
For technical support, including JANTXV1N5822US datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your JANTXV1N5822US requirements.
6.How does Aetrix verify that JANTXV1N5822US is sourced from the original manufacturer or authorized distributors?
All JANTXV1N5822US products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that JANTXV1N5822US meets industry standards.
7.What is the process for return or replacement of JANTXV1N5822US?
All JANTXV1N5822US units undergo pre-shipment inspection (PSI). If there is an issue with JANTXV1N5822US, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The JANTXV1N5822US part is unused and in its original packaging.
Return procedure for JANTXV1N5822US:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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