Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSA1010Y

Part No.:
KSA1010Y
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-220-3
Datasheet:
AetrixKSA1010Y.pdf
Description:
TRANS PNP 100V 7A TO-220-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,792

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSA1010Y from onsemi is a PNP epitaxial silicon transistor designed for high-speed, high-voltage switching in industrial power control circuits. It features −100 V VCEO, −7 A DC collector current, 40 W collector dissipation at TC = 25°C, and <0.6 V VCE(sat) at −5 A/−0.5 A, enabling robust operation in relay drivers and SMPS output stages.

For engineers reviewing the KSA1010Y datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-220-3LD package, hFE grade Y (100–200 at −3 A), −100 V sustaining voltage under clamped inductive switching, and verified safe operating area up to 100 ms pulse width.

Technical Context

This device operates as a high-voltage PNP switch with fast turn-on (<0.5 µs), storage (<1.5 µs), and fall (<0.5 µs) times under −50 V/−5 A conditions. Its clamped inductive switching capability supports VCEX(sus)1 = −100 V with VBE(off) = 5 V and L = 180 µH, meeting industrial snubberless relay and solenoid drive requirements.

The KSA1010Y exhibits graded hFE (Y = 100–200 at −3 A), low leakage (ICEO ≤ −1 mA at 125°C), and thermal derating to zero power at TC = 175°C - all validated per onsemi's Rev. 2 (Nov. 2023) datasheet.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−100 V: Withstands full supply rail in 80–100 V industrial DC systems without breakdown.
IC (DC)−7 A: Supports continuous load currents up to 7 A in base-driven linear or switching regulators.
PC @ TC=25°C40 W: Enables high-power dissipation with heatsink mounting; derates linearly to 0 W at 175°C case temp.
VCE(sat)≤ −0.6 V @ −5 A/−0.5 A: Minimizes conduction loss in saturated-switching applications like motor commutation.
tSTG≤ 1.5 µs: Limits stored charge delay during turn-off, critical for >100 kHz PWM in flyback converters.
hFE Grade Y100–200 @ −3 A: Ensures predictable base drive sizing for consistent saturation across production lots.

Pinout & Package

Package: TO-220-3LD (Case 340AT), isolated tab, vertical mounting, Pb-free compliant.

Pin/TerminalCircuit RoleDesign Meaning
1 (Base)Control inputReceives negative base current to saturate; requires ≥−0.5 A for full −5 A collector conduction.
2 (Collector)High-side switched nodeConnected to negative rail or inductive load return; handles −100 V reverse bias and −15 A pulsed current.
3 (Emitter)Power reference terminalTied to system ground or positive rail; carries full load current and defines VEB bias path.

Key Features

FeatureDesign Value
Clamped inductive switchingRated −100 V VCEX(sus) with external clamp diode and 180 µH load, eliminating need for separate snubbers in relay drivers.
High-speed switchingCombined tON + tSTG + tF < 2.5 µs enables stable operation up to 200 kHz in DC-DC converters.
Thermal stabilityJunction temperature rated to 150°C with 125°C storage-tested leakage (ICEO ≤ −1 mA), supporting sealed industrial enclosures.
hFE gradingY-grade binning (100–200) ensures tight base-drive tolerance across production, reducing design margin overhead.

Applications

Industrial Relay DriversSMPS Output Switches

Use Scenario: Driving 24–48 V DC electromagnetic relays with 100–500 Ω coils in PLC I/O modules.

IC Role / Device Role / Timing Role: High-voltage PNP switch providing negative-side coil energization with fast turn-off to suppress back-EMF.

Use Value: −100 V VCEX(sus) and 1.5 µs tSTG eliminate external snubbers and reduce relay release time by >30% vs. ungraded transistors.

Use Scenario: Output stage in 48 V input, 12 V/5 A offline flyback converters for industrial HMIs.

IC Role / Device Role / Timing Role: Primary-side PNP switch controlling transformer energy transfer during discontinuous conduction mode.

Use Value: 40 W PC and 0.6 V VCE(sat) limit thermal rise to <45°C rise at 5 A, enabling compact heatsinkless designs.

Motor CommutationSolenoid Actuation

Use Scenario: Bidirectional H-bridge upper-leg switch for 24 V brushed DC motors in automated valves.

IC Role / Device Role / Timing Role: High-side PNP switch enabling ground-referenced logic control of motor polarity reversal.

Use Value: −7 A IC and 100–200 hFE allow direct microcontroller GPIO drive (via level-shifting) without intermediate buffer stages.

Use Scenario: 12–24 V solenoid control in pneumatic cylinder sequencing systems with 200 ms dwell time.

IC Role / Device Role / Timing Role: Sustained-current PNP switch delivering precise on-time pulses with minimal voltage droop.

Use Value: −100 V VCEO withstands 2× supply transients during valve de-energization; 0.6 V VCE(sat) ensures ≥95% duty-cycle efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP high-voltage switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
KSA1010OTUSame die, O-grade hFE (60–120) instead of Y-grade (100–200); otherwise identical ratings and SOA.Lower hFE requires higher base drive current for same collector current, increasing MCU GPIO loading.Select when tighter hFE tolerance is not required and cost optimization is prioritized.
MJD127GTO-263 package, −100 V VCEO, −8 A IC, but only 1.5 W PC @ TA; no clamped inductive rating published.Surface-mount alternative with lower thermal performance; unsuitable for sustained >1 A loads without aggressive PCB copper.Choose for space-constrained SMT layouts where peak pulse current suffices and heatsinking is impractical.

Compared with KSA1010OTU and MJD127G, the KSA1010Y delivers superior hFE consistency for predictable base drive and higher case-mounted thermal capacity - making it optimal for thermally demanding, volume-manufactured industrial controls where reliability and drive simplicity are critical.

Availability

KSA1010Y is available at Aetrix Electronics and suitable for industrial relay drivers, SMPS output switches, motor commutation circuits, and solenoid actuation systems requiring stable component supply across multi-year production cycles.

Supply support for KSA1010Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The KSA1010Y belongs to onsemi's high-voltage bipolar transistor product line, engineered specifically for ruggedized industrial switching applications where reliability under repetitive inductive stress and thermal cycling is mandatory.

FAQ

What is the maximum continuous collector current rating for the KSA1010Y?

The KSA1010Y has a maximum DC collector current (IC) rating of −7 A at TC = 25°C, as specified in the Absolute Maximum Ratings table. This rating assumes proper heatsinking and derates linearly with increasing case temperature - dropping to zero at TC = 175°C. For pulsed operation, ICP reaches −15 A under defined conditions (PW ≤ 300 µs, duty cycle ≤ 10%). The KSA1010Y must be operated within these limits to ensure long-term reliability and avoid junction overheating.

Does the KSA1010Y support clamped inductive switching, and what are the test conditions?

Yes, the KSA1010Y is explicitly characterized for clamped inductive switching with VCEX(sus)1 = −100 V at IC = −5 A, IB1 = −IB2 = −0.5 A, VBE(off) = 5 V, L = 180 µH, and clamped configuration. This rating confirms its suitability for relay and solenoid drive without external snubbers. The KSA1010Y datasheet validates this performance under standardized test conditions, ensuring repeatable behavior in real-world inductive load switching.

What does the 'Y' suffix in KSA1010Y indicate, and how does it affect circuit design?

The 'Y' suffix denotes the hFE gain grade: 100–200 at VCE = −5 V and IC = −3 A. This tight binning reduces variation in base drive requirements across production lots, allowing more deterministic resistor selection and minimizing overdesign of driver stages. When designing with the KSA1010Y, engineers can rely on consistent saturation behavior at −5 A with −0.5 A base current, unlike ungraded or lower-grade variants such as KSA1010OTU.

Can the KSA1010Y be used in surface-mount applications?

No, the KSA1010Y is packaged exclusively in the through-hole TO-220-3LD (Case 340AT) outline and is not offered in surface-mount variants. Its thermal performance depends on mechanical mounting to a heatsink via the isolated tab. For SMT implementations, alternatives like the MJD127G (TO-263) may be considered, though they differ in thermal rating, SOA, and clamping capability. The KSA1010Y must be mounted using standard TO-220 hardware and thermal interface materials to achieve its rated 40 W dissipation.

How does the KSA1010Y compare to its complementary NPN counterpart KSC2334?

The KSA1010Y (PNP) and KSC2334 (NPN) share matched voltage ratings (−100 V / +100 V), current capability (−7 A / +7 A), and switching speed profiles, enabling balanced push-pull or H-bridge designs. Their complementary characteristics - including similar VCE(sat), hFE ranges, and SOA curves - simplify dual-transistor layout and drive circuitry. The KSA1010Y serves as the designated PNP match to the KSC2334 per onsemi's documentation, ensuring timing and thermal symmetry in bidirectional industrial power stages.

KSA1010Y Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-220-3
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
7 A
Voltage - Collector Emitter Breakdown (Max):
100 V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 500mA, 5A
Current - Collector Cutoff (Max):
10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 3A, 5V
Power - Max:
1.5 W
Frequency - Transition:
-
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220-3

KSA1010Y FAQ

1.How can I place an order for KSA1010Y through Aetrix?

Please submit a Request for Quotation (RFQ) for KSA1010Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSA1010Y reliable?

The price and inventory of KSA1010Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSA1010Y is usually 5 days.

3.What payment methods are accepted for KSA1010Y?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSA1010Y transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSA1010Y?

KSA1010Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSA1010Y order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSA1010Y?

For technical support, including KSA1010Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSA1010Y requirements.

6.How does Aetrix verify that KSA1010Y is sourced from the original manufacturer or authorized distributors?

All KSA1010Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSA1010Y meets industry standards.

7.What is the process for return or replacement of KSA1010Y?

All KSA1010Y units undergo pre-shipment inspection (PSI). If there is an issue with KSA1010Y, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSA1010Y part is unused and in its original packaging.

Return procedure for KSA1010Y:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSA1010Y Tags

  • KSA1010Y
  • KSA1010Y PDF
  • KSA1010Y Datasheet
  • KSA1010Y Specifications
  • KSA1010Y Images
  • onsemi
  • onsemi KSA1010Y
  • Buy KSA1010Y
  • KSA1010Y Price
  • KSA1010Y Distributor
  • KSA1010Y Supplier
  • KSA1010Y Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER