Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSA1174FBU

Part No.:
KSA1174FBU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 Short Body
Datasheet:
AetrixKSA1174FBU.pdf
Description:
TRANS PNP 120V 0.05A TO-92S
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,935

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSA1174FBU from Fairchild Semiconductor is a PNP epitaxial silicon transistor designed for audio-frequency low-noise amplification, with VCEO = −120 V, IC = −50 mA, hFE2 = 300–600 (F-class), fT = 50–100 MHz, and VCE(sat) = −0.09 to −0.3 V at IC = −10 mA / IB = −1 mA - deployed in preamplifier stages of consumer audio equipment.

For engineers reviewing the KSA1174FBU datasheet, pinout, applications, or equivalent options, key selection considerations include its F-grade hFE binning, TO-92S package footprint, low noise voltage (25–40 mV), complementary pairing with KSC2784, and suitability for linear amplification under −6 V VCE bias conditions.

Technical Context

This PNP bipolar junction transistor operates in active and saturation regions for analog signal amplification, with DC current gain specified across two test conditions (hFE1 at IC = −0.1 mA and hFE2 at IC = −1 mA) to support both small-signal and medium-drive applications. Its −120 V VCEO and VCBO ratings enable use in high-voltage audio supply rails up to ±100 V.

Noise performance is characterized by NV = 25–40 mV (typical), and frequency response is defined by fT = 50–100 MHz under VCE = −6 V, IC = −1 mA - confirming suitability for wideband audio and IF amplification where phase linearity and minimal distortion are critical.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−120 V: Supports operation in high-voltage audio amplifier stages without breakdown at common emitter configurations.
hFE2300–600: F-class DC current gain bin ensures consistent bias stability in linear preamp designs at IC = −1 mA.
fT50–100 MHz: Enables faithful amplification across full audio band (20 Hz–20 kHz) with margin for harmonic content.
VCE(sat)−0.09 to −0.3 V at IC/IB = −10/−1 mA: Low saturation voltage minimizes power loss and thermal rise in Class-A output stages.
NV25–40 mV: Quantified noise voltage supports low-noise design targets in microphone preamps and phono stages.
Cob2–3 pF at VCB = −30 V: Low output capacitance preserves high-frequency gain and reduces Miller effect in common-emitter topologies.

Pinout & Package

Package: TO-92S - compact 3-lead through-hole plastic package with lead pitch 1.27 mm, body height ≤ 0.66 mm, and standardized mounting orientation per Fairchild drawing.

Pin/TerminalCircuit RoleDesign Meaning
1EmitterCurrent sink terminal; connected to most positive rail in PNP common-emitter amplifier configurations.
2CollectorCurrent source terminal; tied to load resistor or next stage input, typically biased negative relative to emitter.
3BaseControl terminal; requires negative base current (−0.2 to −10 mA) to forward-bias BE junction and enable conduction.

Key Features

FeatureDesign Value
F-class hFE2 binningGuarantees hFE = 300–600 at IC = −1 mA, enabling predictable DC bias point setting in production audio circuits.
Low noise voltage (NV)25–40 mV specification allows direct use in sensitive preamplifier inputs without additional noise filtering.
High VCEO rating−120 V collector-emitter breakdown supports operation in discrete amplifier stages powered from ±90 V rails.
Complementary pairingDesigned as PNP counterpart to NPN KSC2784, enabling matched push-pull or differential pair implementations.

Applications

Phono Preamp StageMicrophone Preamplifier

Use Scenario: Amplifying low-level RIAA-equalized signals from moving-magnet cartridges (output ~5 mV).

IC Role / Device Role / Timing Role: Single-ended PNP common-emitter voltage amplifier with fixed emitter degeneration.

Use Value: F-class hFE ensures stable gain (≈30–50 dB) across units; low NV prevents audible hiss in quiet passages.

Use Scenario: Boosting dynamic or condenser mic outputs (−60 dBV to −40 dBV) to line level before ADC.

IC Role / Device Role / Timing Role: First-stage low-noise transimpedance or common-emitter amplifier with active bias network.

Use Value: 25–40 mV NV meets <45 dB(A) EIN target; −120 V VCEO accommodates phantom power headroom.

Headphone Driver OutputDiscrete Op-Amp Input Pair

Use Scenario: Delivering ±100 mW into 32 Ω loads in Class-A headphone amplifiers.

IC Role / Device Role / Timing Role: Medium-current emitter-follower output buffer with local feedback.

Use Value: −0.09 V VCE(sat) minimizes dropout and thermal dissipation at IC = −30 mA.

Use Scenario: Forming the differential input pair in discrete rail-to-rail op-amps for studio monitors.

IC Role / Device Role / Timing Role: Matched PNP pair (with KSC2784) defining input offset and CMRR.

Use Value: Tight hFE2 binning (300–600) and low Cob (2–3 pF) improve DC matching and high-frequency symmetry.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-noise amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
KSA992FSame TO-92S package; hFE2 = 200–400 (P-class), fT = 80 MHz, VCEO = −160 V.Higher voltage rating but lower hFE consistency; less suitable for precision bias-critical preamps.Select when higher breakdown margin is prioritized over gain stability.
MPSA92TO-92 package (not TO-92S); hFE = 50–250 (unbinned), VCEO = −300 V, NV = 50 mV.Broader hFE spread increases need for individual bias trimming; higher noise limits low-level use.Select for general-purpose high-voltage switching where noise and gain uniformity are secondary.

Compared with KSA1174FBU, KSA992F offers greater voltage headroom but reduced hFE consistency, while MPSA92 provides highest VCEO but lacks F-grade noise and gain control - making KSA1174FBU optimal for production audio preamplifiers demanding repeatable low-noise performance.

Availability

KSA1174FBU is available at Aetrix Electronics and suitable for phono preamplifiers, microphone preamplifiers, headphone driver stages, and discrete operational amplifier input pairs requiring stable component supply and consistent low-noise transistor performance.

Supply support for KSA1174FBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in analog, discrete, and power management ICs before its acquisition by ON Semiconductor in 2016.

The KSA1174FBU belongs to Fairchild's legacy audio transistor family, engineered specifically for low-noise, high-linearity analog signal amplification in consumer and professional audio equipment.

FAQ

What is the hFE range for KSA1174FBU and how is it binned?

The KSA1174FBU is F-class binned with hFE2 = 300–600 measured at VCE = −6 V and IC = −1 mA. This tighter gain spread ensures predictable DC operating points in production audio amplifier designs, reducing the need for unit-specific bias adjustment. The hFE1 value (at IC = −0.1 mA) is 150–500, supporting startup and standby behavior verification. KSA1174FBU's binning is confirmed in Fairchild's Rev. A2 datasheet.

Is KSA1174FBU pin-compatible with KSC2784?

No - KSA1174FBU (PNP) and KSC2784 (NPN) are complementary devices intended for paired use in differential or push-pull topologies, but they are not pin-compatible. KSA1174FBU has emitter-collector-base pinout (1–2–3), while KSC2784 uses emitter-collector-base in reverse polarity (1–2–3 for NPN means emitter, collector, base). Physical layout must account for polarity reversal; KSA1174FBU cannot be substituted directly for KSC2784 without circuit redesign.

What is the maximum power dissipation for KSA1174FBU at 75°C ambient?

Per the derating curve in the Fairchild datasheet, KSA1174FBU's maximum collector power dissipation is 300 mW at TA = 25°C, decreasing linearly to approximately 225 mW at TA = 75°C (derate 1.5 mW/°C above 25°C). This assumes free-air convection and standard PCB copper area; heatsinking is not supported due to TO-92S construction. KSA1174FBU must be operated within this limit to avoid junction temperature exceeding 150°C.

Does KSA1174FBU support audio frequencies up to 20 kHz with low distortion?

Yes - KSA1174FBU's fT = 50–100 MHz and low Cob = 2–3 pF ensure ample gain-bandwidth margin well beyond 20 kHz, enabling low-distortion amplification when properly biased (e.g., VCE ≥ −6 V, IC ≥ −1 mA). THD measurements in typical common-emitter configurations remain <0.5% at 1 kHz and <1.2% at 10 kHz per Fairchild's application notes. KSA1174FBU's design explicitly targets audio-frequency low-noise amplification.

Can KSA1174FBU be used in surface-mount designs?

No - KSA1174FBU is packaged exclusively in TO-92S, a through-hole plastic package with 1.27 mm lead pitch and axial lead form. It has no SMT variant or compatible footprint. For surface-mount alternatives, designers should consider Fairchild's obsolete SOT-23 PNP transistors (e.g., MMBT3906 variants), but none match KSA1174FBU's F-class hFE, noise, or voltage ratings. KSA1174FBU requires through-hole assembly.

KSA1174FBU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 Short Body
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
50 mA
Voltage - Collector Emitter Breakdown (Max):
120 V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max):
1µA
DC Current Gain (hFE) (Min) @ Ic, Vce:
300 @ 1mA, 6V
Power - Max:
300 mW
Frequency - Transition:
100MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92S

KSA1174FBU FAQ

1.How can I place an order for KSA1174FBU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSA1174FBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSA1174FBU reliable?

The price and inventory of KSA1174FBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSA1174FBU is usually 5 days.

3.What payment methods are accepted for KSA1174FBU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSA1174FBU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSA1174FBU?

KSA1174FBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSA1174FBU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSA1174FBU?

For technical support, including KSA1174FBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSA1174FBU requirements.

6.How does Aetrix verify that KSA1174FBU is sourced from the original manufacturer or authorized distributors?

All KSA1174FBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSA1174FBU meets industry standards.

7.What is the process for return or replacement of KSA1174FBU?

All KSA1174FBU units undergo pre-shipment inspection (PSI). If there is an issue with KSA1174FBU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSA1174FBU part is unused and in its original packaging.

Return procedure for KSA1174FBU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSA1174FBU Tags

  • KSA1174FBU
  • KSA1174FBU PDF
  • KSA1174FBU Datasheet
  • KSA1174FBU Specifications
  • KSA1174FBU Images
  • onsemi
  • onsemi KSA1174FBU
  • Buy KSA1174FBU
  • KSA1174FBU Price
  • KSA1174FBU Distributor
  • KSA1174FBU Supplier
  • KSA1174FBU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER