onsemi KSA1175GBU

Overview

KSA1175GBU from Fairchild Semiconductor is a PNP epitaxial silicon transistor designed for low-frequency amplifier applications, with V_CEO = −50 V, I_C = −150 mA, P_C = 250 mW, h_FE up to 700, and f_T = 180 MHz - used in audio preamplifier stages and signal conditioning circuits.

For engineers reviewing the KSA1175GBU datasheet, pinout, applications, or equivalent options, key selection factors include its TO-92S package, complementary pairing with KSC2785, DC current gain classification (G-grade: h_FE = 200–400), low V_CE(sat), and noise figure performance at 100 Hz.

Technical Context

This PNP bipolar junction transistor operates in common-emitter configuration with specified breakdown voltages (V_CBO = −60 V, V_CEO = −50 V) and exhibits DC current gain (h_FE) dependent on collector current and V_CE bias, with typical values ranging from 40 to 700 across h_FE classification grades.

Its high f_T (up to 180 MHz) supports stable amplification in low-frequency analog signal paths, while low output capacitance (C_ob = 2.8 pF at V_CB = −10 V) and noise figure (6.0–20 dB at 100 Hz, R_S = 10 kΩ) enable use in sensitive audio front-end designs.

Key Specifications

Pinout & Package

Package: TO-92S - compact through-hole plastic package with 3.72 mm height, 2.86 mm width, and 1.27 mm lead pitch; optimized for manual assembly and low-cost consumer electronics.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-frequency amplifier applications.

Compared with MPSA92 and KSA992, the KSA1175GBU offers optimal balance of low-noise performance, tight h_FE tolerance, and TO-92S form factor for space-constrained low-voltage amplifier designs - without over-specifying voltage or power.

Availability

KSA1175GBU is available at Aetrix Electronics and suitable for audio preamplifiers, discrete signal level shifters, and differential pair inputs requiring stable component supply, consistent h_FE binning, and TO-92S through-hole compatibility.

Supply support for KSA1175GBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in analog and discrete power products, acquired by ON Semiconductor in 2016; known for robust, cost-effective bipolar transistors and MOSFETs.

The KSA1175GBU belongs to Fairchild's legacy low-frequency PNP transistor family, engineered specifically for high-fidelity audio amplification, signal conditioning, and complementary circuit design with NPN counterparts like KSC2785.

FAQ

What is the pin configuration of the KSA1175GBU?

The KSA1175GBU uses a TO-92S package with standardized pinout: Pin 1 is Emitter, Pin 2 is Collector, and Pin 3 is Base - verified from Fairchild's Rev. A2 datasheet and dimensional drawings. This arrangement is consistent across all KSA1175 variants and must be observed to avoid reverse-bias damage during PCB layout or prototyping.

Is the KSA1175GBU RoHS compliant?

The KSA1175GBU was manufactured prior to mandatory RoHS enforcement and predates 2006 EU directives; it contains leaded solder terminations and is not RoHS-compliant. For new designs requiring compliance, consult ON Semiconductor's modern PNP equivalents such as NSS60201MR6T1G, which maintains functional similarity with updated environmental specifications.

What does the 'G' suffix in KSA1175GBU indicate?

The 'G' in KSA1175GBU denotes the h_FE classification grade - specifying a DC current gain range of 200 to 400 at V_CE = −6 V and I_C = −1 mA. This binning ensures tighter gain consistency than standard 'R' or 'O' grades, supporting predictable biasing in production amplifier circuits without post-manufacture calibration.

Can the KSA1175GBU replace the KSA1175YBU in a circuit?

Yes - the KSA1175GBU and KSA1175YBU share identical electrical specifications and TO-92S packaging; only their h_FE bins differ (G: 200–400 vs. Y: 120–240). Substitution is electrically valid if the circuit tolerates the higher minimum h_FE; verify stability under worst-case β variation and adjust base bias resistors if necessary to maintain quiescent point.

What is the maximum operating temperature for the KSA1175GBU?

The KSA1175GBU has a maximum junction temperature (T_J) of 150°C and storage temperature range of −55°C to +150°C. Derating begins at 25°C ambient: power dissipation must decrease linearly beyond that point, with full derating to zero at 150°C case temperature - confirmed in Absolute Maximum Ratings section of the official datasheet.