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onsemi KSA1175RTA

Part No.:
KSA1175RTA
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 Short Body
Datasheet:
AetrixKSA1175RTA.pdf
Description:
TRANS PNP 50V 0.15A TO-92S
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,721

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Product details

Overview

KSA1175RTA from ON Semiconductor (formerly Fairchild) is a PNP epitaxial silicon transistor designed for low-frequency amplification and switching in analog signal paths. It features VCEO = −50 V, IC = −150 mA, PC = 250 mW, hFE = 40–700 (R–L grade), and fT = 50–180 MHz - enabling use in audio preamplifiers, relay drivers, and discrete logic level translation.

For engineers reviewing the KSA1175RTA datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-92S package, complementary pairing with KSC2785, guaranteed hFE classification band, VCE(sat) ≤ −0.3 V at IC = −100 mA/IB = −10 mA, and noise figure of 6.0–20 dB at 100 Hz.

Technical Context

This PNP bipolar junction transistor operates in common-emitter configuration with DC current gain spanning five factory-classified bins (R to L). Its breakdown ratings - BVCBO = −60 V, BVCEO = −50 V, BVEBO = −5 V - define safe operating limits under reverse-biased junction conditions.

Dynamic performance is characterized by fT up to 180 MHz and Cob = 2.8 pF at VCB = −10 V, supporting stable gain in sub-VHF amplification stages. Saturation behavior is specified at IC/IB = 10, with VCE(sat) ≤ −0.3 V and VBE(on) = −0.50 to −0.80 V at IE = −1 mA.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−50 V: Maximum collector-emitter voltage before avalanche breakdown; defines safe linear/saturation operation in low-voltage PNP switch or amplifier stages.
IC−150 mA: Continuous collector current rating; supports medium-current drive for relays, LEDs, or small-signal output stages.
PC250 mW: Power dissipation limit at TA = 25°C; requires thermal derating above 25°C ambient per datasheet curve.
hFE40–700 (R–L grade): Factory-binned DC current gain range; enables predictable biasing without individual device characterization.
fT50–180 MHz: Current-gain bandwidth product; confirms suitability for audio and low-RF amplification, not RF power stages.
VCE(sat)≤ −0.3 V at IC = −100 mA/IB = −10 mA: Low saturation voltage ensures minimal power loss and heat generation in switching applications.
Cob2.8 pF at VCB = −10 V: Output capacitance affects high-frequency stability and Miller effect; critical for multi-stage amplifier design.

Pinout & Package

Package: TO-92S - 3-lead plastic through-hole package with 1.27 mm lead pitch, 4.00 mm body height, and 2.86 mm body width; optimized for manual assembly and compact PCB layouts.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current source terminal for PNP operationConnected to higher potential (e.g., VCC) in common-emitter amplifier; polarity must be observed to avoid reverse bias damage.
2 (Collector)Current sink terminalTypically tied to load or next stage input; voltage swing limited to −50 V relative to emitter.
3 (Base)Control terminal for minority-carrier injectionRequires negative base current (relative to emitter) to turn on; VBE(on) = −0.50 to −0.80 V defines required drive level.

Key Features

FeatureDesign Value
Complementary pair to KSC2785Enables balanced push-pull or differential amplifier designs using matched NPN/PNP characteristics and layout symmetry.
Five hFE classification grades (R–L)Reduces need for external gain trimming or binning in production; allows consistent bias point selection across batches.
Low VCE(sat) (≤ −0.3 V)Minimizes conduction loss and self-heating in saturated-switch applications such as LED drivers or logic-level translators.
Specified noise figure (6.0–20 dB @ 100 Hz)Supports low-noise audio preamplifier use where 1/f noise dominates; enables selection of appropriate grade for sensitive front-end stages.

Applications

Audio Preamp StageRelay Driver Circuit

Use Scenario: Amplifying weak microphone or phono signals in consumer audio equipment before ADC or further processing.

IC Role / Device Role / Timing Role: Discrete PNP amplifier in common-emitter configuration with emitter degeneration for linearity and gain control.

Use Value: hFE binning ensures repeatable gain; low noise figure (6.0–20 dB) preserves signal integrity in first-stage amplification.

Use Scenario: Driving electromagnetic relays requiring ~100 mA coil current in industrial control panels or appliance logic boards.

IC Role / Device Role / Timing Role: Saturated PNP switch sinking current from relay coil to ground when base is pulled low.

Use Value: VCE(sat) ≤ −0.3 V minimizes power loss and coil voltage drop; −50 V VCEO accommodates back-EMF suppression requirements.

Digital Logic Level TranslatorDiscrete Complementary Pair Amplifier

Use Scenario: Converting 3.3 V logic outputs to interface with 5 V or 12 V legacy systems using open-collector or pull-up configurations.

IC Role / Device Role / Timing Role: Active-low inverter or level shifter with defined VOL and propagation delay governed by hFE and Cob.

Use Value: Fast fT (up to 180 MHz) and low Cob (2.8 pF) enable clean edge transitions up to ~10 MHz clock rates.

Use Scenario: Building Class-A or push-pull output stages in low-power analog instrumentation where IC op-amps lack required output swing or drive capability.

IC Role / Device Role / Timing Role: PNP half of complementary pair with KSC2785, providing symmetrical sourcing/sinking in output buffer.

Use Value: Matched breakdown voltages (VCEO = −50 V / +50 V) and similar hFE ranges ensure balanced distortion and thermal tracking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP low-frequency transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MPSA92VCEO = −300 V, IC = −500 mA, PC = 625 mW, hFE = 25–200 - higher voltage/current but wider hFE tolerance.Preferred for high-voltage switching (e.g., flyback snubbers); less suitable for low-noise audio due to unspecified NF.Select when >−50 V breakdown or >−150 mA current is required; verify thermal margin for 625 mW dissipation.
BC557VCEO = −45 V, IC = −100 mA, PC = 500 mW, hFE = 110–800 - lower voltage rating, higher power rating, tighter hFE spread.Common in European consumer electronics; widely available but lacks official complement pairing like KSA1175/KSC2785.Choose for cost-sensitive volume production where exact Fairchild/ON pairing is not required; confirm VCEO margin in final design.

Compared with MPSA92 and BC557, the KSA1175RTA offers factory-grade hFE binning, documented noise performance, and guaranteed complementary pairing - making it preferable for precision low-noise or matched-pair analog designs despite narrower absolute ratings.

Availability

KSA1175RTA is available at Aetrix Electronics and suitable for audio preamplifiers, relay driver circuits, and discrete logic level translators requiring stable component supply, consistent hFE grading, and TO-92S through-hole compatibility.

Supply support for KSA1175RTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The KSA1175RTA belongs to ON Semiconductor's legacy bipolar transistor portfolio, originally developed by Fairchild for general-purpose low-frequency amplification and switching - emphasizing reliability, parameter consistency, and complementary device pairing.

FAQ

What is the pin configuration of the KSA1175RTA?

The KSA1175RTA uses a TO-92S package with standardized pinout: Pin 1 = Emitter, Pin 2 = Collector, Pin 3 = Base. This configuration is confirmed in the original Fairchild Rev. A2 datasheet and maintained in ON Semiconductor's documentation. Correct orientation is essential - reversing emitter and collector will exceed VEBO rating and cause immediate failure. Always verify physical marking alignment before soldering the KSA1175RTA.

Is the KSA1175RTA RoHS compliant?

Yes, the KSA1175RTA is RoHS compliant and lead-free, consistent with ON Semiconductor's transition to green packaging standards post-2006. The TO-92S package uses matte tin plating on leads and halogen-free molding compound. Compliance is verified per JEDEC J-STD-609 and reflected in ON Semiconductor's official part status documentation for KSA1175RTA - no exemptions apply.

What does the 'RTA' suffix mean in KSA1175RTA?

The 'RTA' suffix in KSA1175RTA denotes a specific tape-and-reel packaging variant for automated SMT placement, with 2,000 units per reel and moisture sensitivity level (MSL) 1. It does not indicate a parametric change - all electrical specifications match the base KSA1175. The 'R' signifies reel packaging, 'T' indicates tape carrier, and 'A' identifies the standard moisture barrier specification. This applies exclusively to the KSA1175RTA, not other variants like KSA1175OTA (ammo pack).

Can KSA1175RTA replace KSA1175 in existing designs?

Yes, KSA1175RTA is a direct form-fit-function replacement for KSA1175, sharing identical die, TO-92S package dimensions, pinout, and electrical specifications. The only difference is packaging format: KSA1175RTA is supplied on tape-and-reel for pick-and-place machines, while KSA1175 is typically in bulk or ammo packs. No layout or schematic changes are needed when substituting KSA1175RTA into a design originally specifying KSA1175.

What is the maximum operating temperature for KSA1175RTA?

The KSA1175RTA has a maximum junction temperature (TJ) of 150°C and storage temperature range of −55°C to +150°C. For reliable long-term operation, the device must be derated according to its thermal resistance (RθJA ≈ 400°C/W for TO-92S on FR-4 with minimal copper). At ambient temperatures above 70°C, power dissipation must be reduced below 250 mW to prevent exceeding TJ = 150°C - always reference the KSA1175RTA thermal curves in the official datasheet.

KSA1175RTA Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 Short Body
Packaging:
Tape & Box (TB)
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
150 mA
Voltage - Collector Emitter Breakdown (Max):
50 V
Vce Saturation (Max) @ Ib, Ic:
300mV @ 10mA, 100mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 1mA, 6V
Power - Max:
250 mW
Frequency - Transition:
180MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92S

KSA1175RTA FAQ

1.How can I place an order for KSA1175RTA through Aetrix?

Please submit a Request for Quotation (RFQ) for KSA1175RTA on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSA1175RTA reliable?

The price and inventory of KSA1175RTA are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSA1175RTA is usually 5 days.

3.What payment methods are accepted for KSA1175RTA?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSA1175RTA transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSA1175RTA?

KSA1175RTA orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSA1175RTA order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSA1175RTA?

For technical support, including KSA1175RTA datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSA1175RTA requirements.

6.How does Aetrix verify that KSA1175RTA is sourced from the original manufacturer or authorized distributors?

All KSA1175RTA products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSA1175RTA meets industry standards.

7.What is the process for return or replacement of KSA1175RTA?

All KSA1175RTA units undergo pre-shipment inspection (PSI). If there is an issue with KSA1175RTA, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSA1175RTA part is unused and in its original packaging.

Return procedure for KSA1175RTA:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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