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onsemi KSA812GAMTF
- Part No.:
- KSA812GAMTF
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-236-3, SC-59, SOT-23-3
- Datasheet:
-
KSA812GAMTF.pdf
- Description:
- TRANS PNP 50V 0.1A SOT-23-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,759
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Product details
Overview
KSA812GAMTF from ON Semiconductor is a PNP epitaxial silicon transistor in SOT-23 package, rated for -60 V VCBO, -50 V VCEO, -100 mA IC, 150 mW PC, and 180 MHz fT. It serves as a low-frequency amplifier and complements the NPN KSC1623 in push-pull or differential pair configurations in portable audio and signal conditioning circuits.
For engineers reviewing the KSA812GAMTF datasheet, pinout, applications, or equivalent options, key selection criteria include verified hFE grade G (200–400), guaranteed VCE(sat) ≤ –0.3 V at –100 mA/–10 mA, and SOT-23 thermal performance under continuous DC bias in space-constrained analog stages.
Technical Context
The KSA812GAMTF operates as a general-purpose PNP bipolar junction transistor with fixed-emitter biasing capability and linear amplification behavior in Class-A or switching roles. Its hFE grade G ensures consistent current gain across production lots, while its –0.62 V typical VBE(on) at –1 mA supports predictable base drive requirements in discrete bias networks.
Designed for low-frequency analog signal handling up to ~10 MHz, it exhibits Cob = 4.5 pF at –10 V VCB and fT = 180 MHz-indicating usable bandwidth beyond audio range but not optimized for RF switching. Junction temperature rating of 150°C enables operation in thermally dense PCB layouts when derated per power dissipation limits.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | –60 V: Maximum reverse voltage between collector and base before breakdown; defines safe operating area in high-side switch or common-base amplifier topologies. |
| VCEO | –50 V: Maximum collector-to-emitter voltage with base open; sets upper limit for supply rail compatibility in emitter-follower or grounded-emitter stages. |
| IC | –100 mA: Continuous collector current rating; supports small-signal amplification and low-power switching without forced cooling. |
| hFE (Grade G) | 200–400: Confirmed DC current gain range at VCE = –6 V, IC = –1 mA; enables stable bias point design in discrete gain blocks. |
| fT | 180 MHz: Current gain–bandwidth product; confirms usable frequency response up to mid-VHF for tuned amplifiers or fast-switching applications. |
| Cob | 4.5 pF at –10 V: Output capacitance determines Miller effect magnitude and high-frequency roll-off in common-emitter configurations. |
| PC | 150 mW: Maximum power dissipation at 25°C ambient; requires trace width and copper area planning for >75 mW sustained operation. |
Pinout & Package
SOT-23 plastic surface-mount package with gull-wing leads; standardized footprint (2.90 mm × 1.30 mm × 1.00 mm), JEDEC MO-178 compliant, suitable for reflow soldering and automated assembly.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control electrode | Receives forward-biased current to enable conduction; requires series resistor for current limiting in digital or analog drive circuits. |
| 2 (Emitter) | Current source terminal | Connected to higher potential rail in PNP operation; provides return path for load current in high-side switch or current sink applications. |
| 3 (Collector) | Output terminal | Delivers amplified or switched current to load; polarity inversion relative to base/emitter must be observed in schematic placement. |
Key Features
| Feature | Design Value |
|---|---|
| hFE Grade G | 200–400 gain binning ensures predictable bias stability across production units in discrete amplifier designs. |
| VCE(sat) ≤ –0.3 V | Low saturation voltage at –100 mA/–10 mA enables efficient switching with minimal voltage drop in active-low logic interfaces. |
| SOT-23 Package | Standardized 3-pin footprint allows direct replacement in legacy designs using Fairchild KSA812 variants and simplifies layout reuse. |
| Complementary Pairing | Engineered as direct PNP counterpart to KSC1623 NPN; supports matched thermal and gain tracking in differential or push-pull output stages. |
Applications
| Portable Audio Amplifiers | DC-DC Converter Bias Circuits |
|---|---|
Use Scenario: Low-voltage headphone driver stage in battery-powered MP3 players requiring low quiescent current and minimal THD. IC Role / Device Role / Timing Role: PNP small-signal amplifier in common-emitter configuration with emitter degeneration for linearity control. Use Value: hFE grade G ensures repeatable gain matching across channels; VCE(sat) ≤ –0.3 V minimizes dropout in 3.3 V rail operation. | Use Scenario: Base drive circuit for external P-channel MOSFET in non-isolated buck converter feedback loop. IC Role / Device Role / Timing Role: Level-shifting current buffer translating PWM controller output to high-side gate driver input. Use Value: –60 V VCBO withstands transient spikes on 24 V input rails; SOT-23 footprint fits tight gate-drive routing constraints. |
| Industrial Sensor Signal Conditioning | Legacy Equipment Repair |
Use Scenario: Amplifying microvolt-level thermocouple outputs in 4–20 mA transmitter modules with cold-junction compensation. IC Role / Device Role / Timing Role: First-stage low-noise PNP preamplifier with emitter-follower input buffering and gain stabilization. Use Value: Cob = 4.5 pF reduces capacitive loading on high-impedance sensor nodes; TJ = 150°C supports operation in sealed enclosures. | Use Scenario: Replacement for obsolete Fairchild KSA812 in field-service repair of telecom line cards and test equipment. IC Role / Device Role / Timing Role: Direct-fit discrete transistor restoring original bias and gain characteristics in analog front-end circuits. Use Value: Identical SOT-23 mechanical dimensions and pinout (1=Base, 2=Emitter, 3=Collector) ensure zero PCB modification. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP small-signal transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MMBT4403 | hFE range 100–300 (standard grade), slightly lower fT (200 MHz), same SOT-23 package and pinout. | Limited to lower-gain precision biasing; less suitable for high-linearity audio where KSA812GAMTF's grade-G hFE improves channel matching. | Select when cost sensitivity outweighs gain consistency; verify VCE(sat) meets load current requirements. |
| BC807-40 | hFE 250–630 (higher max), higher IC rating (–500 mA), same VCEO (–45 V), SOT-23 pinout compatible. | Better suited for higher-current switching; overqualified for low-power amplification, increasing risk of unintended oscillation if not properly compensated. | Prefer for robustness-critical industrial controls; avoid in audio paths unless gain compression and phase margin are validated. |
Compared with MMBT4403 and BC807-40, the KSA812GAMTF offers tighter hFE binning (200–400) and lower VCE(sat) at moderate currents, making it optimal for matched-pair analog stages where gain symmetry and low distortion are prioritized over raw current capacity.
Availability
KSA812GAMTF is available at Aetrix Electronics and suitable for portable audio amplifiers, DC-DC converter bias circuits, and industrial sensor signal conditioning requiring stable component supply and long-term obsolescence management.
Supply support for KSA812GAMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and edge applications.
The KSA812GAMTF belongs to ON Semiconductor's legacy discrete bipolar transistor portfolio, originally developed by Fairchild for general-purpose linear amplification and switching in cost-sensitive, space-constrained consumer and industrial electronics.
FAQ
What is the pin configuration of the KSA812GAMTF?
The KSA812GAMTF uses standard SOT-23 pinout: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This matches JEDEC MO-178 specification and is identical to the original Fairchild KSA812, enabling drop-in replacement in existing layouts without redesign.
Does the KSA812GAMTF have a specified hFE grade, and what does "G" mean?
Yes, the KSA812GAMTF carries hFE grade G, indicating a DC current gain range of 200–400 at VCE = –6 V and IC = –1 mA. This binning ensures tighter gain distribution than ungraded or broader bins (e.g., O or Y), improving predictability in bias-critical analog circuits.
Can the KSA812GAMTF replace the Fairchild KSA812 in legacy designs?
Yes, the KSA812GAMTF is the ON Semiconductor–branded continuation of the Fairchild KSA812 with identical electrical specifications, SOT-23 package dimensions, and pinout. No PCB or schematic changes are required when migrating from the Fairchild part to KSA812GAMTF.
What is the maximum power dissipation of the KSA812GAMTF at 70°C ambient?
The KSA812GAMTF has a maximum collector power dissipation of 150 mW at 25°C ambient. With a thermal resistance θJA ≈ 350°C/W (typical for SOT-23 on 1-in² FR-4), derating yields ~105 mW at 70°C ambient-requiring careful thermal layout for sustained operation above 75 mW.
Is the KSA812GAMTF suitable for use in automotive applications?
The KSA812GAMTF is not AEC-Q101 qualified and lacks automotive-grade screening or extended temperature validation. While its TJ = 150°C rating permits operation in under-hood environments, ON Semiconductor does not endorse or guarantee its use in automotive safety-critical systems without additional customer qualification.
KSA812GAMTF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-236-3, SC-59, SOT-23-3
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 100 mA
- Voltage - Collector Emitter Breakdown (Max):
- 50 V
- Vce Saturation (Max) @ Ib, Ic:
- 300mV @ 10mA, 100mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 1mA, 6V
- Power - Max:
- 150 mW
- Frequency - Transition:
- 180MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-23-3
KSA812GAMTF FAQ
1.How can I place an order for KSA812GAMTF through Aetrix?
Please submit a Request for Quotation (RFQ) for KSA812GAMTF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSA812GAMTF reliable?
The price and inventory of KSA812GAMTF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSA812GAMTF is usually 5 days.
3.What payment methods are accepted for KSA812GAMTF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSA812GAMTF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSA812GAMTF?
KSA812GAMTF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSA812GAMTF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSA812GAMTF?
For technical support, including KSA812GAMTF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSA812GAMTF requirements.
6.How does Aetrix verify that KSA812GAMTF is sourced from the original manufacturer or authorized distributors?
All KSA812GAMTF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSA812GAMTF meets industry standards.
7.What is the process for return or replacement of KSA812GAMTF?
All KSA812GAMTF units undergo pre-shipment inspection (PSI). If there is an issue with KSA812GAMTF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSA812GAMTF part is unused and in its original packaging.
Return procedure for KSA812GAMTF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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