onsemi KSA812YMTF

Overview

KSA812YMTF from ON Semiconductor is a PNP epitaxial silicon transistor in SOT-23 package, rated for -50 V V_CEO, -100 mA I_C, and 150 mW P_C, with h_FE range 200–400 (Grade Y), optimized for low-frequency amplifier and switching applications in portable audio bias networks and signal-level control stages.

For engineers reviewing the KSA812YMTF datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, SOT-23 terminal mapping (Emitter-Base-Collector), guaranteed h_FE binning (Y-grade), V_CE(sat) ≤ –0.3 V at –100 mA/–10 mA, and complementarity to KSC1623 in dual-transistor designs.

Technical Context

The KSA812YMTF operates as a general-purpose PNP bipolar junction transistor with fixed emitter-base-collector terminal order and DC current gain tightly binned per JEDEC-compliant SOT-23 footprint. Its design targets linear amplification and saturated switching below 180 MHz f_T, with V_BE(on) = –0.55 to –0.65 V and Cob = 4.5 pF enabling stable low-noise biasing in discrete analog stages.

It shares absolute maximum ratings with the KSA812 family-including –60 V V_CBO, –5 V V_EBO, and 150°C T_J-and is specified under Ta = 25°C unless otherwise noted, with all electrical characteristics traceable to Fairchild's Rev. A1, June 2001 datasheet now maintained by ON Semiconductor post-integration.

Key Specifications

Pinout & Package

SOT-23 plastic surface-mount package with standard 3-pin configuration and JEDEC MO-178AA outline; thermal pad not present; lead-free and RoHS compliant per ON Semiconductor documentation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Compared with MMBT3906LT1G and BC807-25, the KSA812YMTF provides superior h_FE consistency (200–400) and lower V_CE(sat) (≤–0.3 V), making it preferred for bias-critical low-frequency amplifiers where gain stability and conduction loss directly impact system accuracy and efficiency.

Availability

KSA812YMTF is available at Aetrix Electronics and suitable for portable audio bias networks, low-voltage signal switching, and complementary pair amplifiers requiring stable component supply, long-term lifecycle support, and guaranteed h_FE grading.

Supply support for KSA812YMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The KSA812YMTF belongs to ON Semiconductor's legacy general-purpose bipolar transistor portfolio, originally developed by Fairchild and maintained for reliability-critical discrete analog functions in cost-sensitive, space-constrained applications.

FAQ

What is the pin configuration of the KSA812YMTF?

The KSA812YMTF uses standard SOT-23 pinout: Pin 1 is Base, Pin 2 is Emitter, and Pin 3 is Collector. This ordering is confirmed in the original Fairchild datasheet Rev. A1 and maintained in ON Semiconductor's documentation. The KSA812YMTF must be mounted with correct orientation to avoid reverse-bias damage or circuit malfunction.

What does the 'Y' in KSA812YMTF indicate?

'Y' denotes the h_FE grade bin, specifying a guaranteed DC current gain range of 200–400 at V_CE = –6 V and I_C = –1 mA. This binning ensures tighter parametric consistency than standard-unbinned variants like KSA812OMTF (O-grade: 90–180). The KSA812YMTF is selected where predictable bias current is essential.

Is the KSA812YMTF a direct replacement for KSA812OMTF?

No-the KSA812YMTF is not a direct replacement for KSA812OMTF due to differing h_FE ranges: O-grade is 90–180, while Y-grade is 200–400. Substituting KSA812YMTF may shift quiescent operating points in bias-sensitive circuits. Verify circuit stability with the KSA812YMTF's higher gain before redesigning around it.

Does the KSA812YMTF have a built-in resistor or ESD protection?

No-the KSA812YMTF is a bare PNP bipolar transistor with no integrated resistors, diodes, or ESD protection structures. External base resistors must be used for current limiting, and board-level ESD safeguards are required in handling and end-use environments. The KSA812YMTF relies entirely on external circuitry for safe operation.

What is the maximum junction temperature rating for the KSA812YMTF?

The KSA812YMTF has a maximum junction temperature (T_J) rating of 150°C, as specified in its Absolute Maximum Ratings table. This value defines the upper thermal limit for reliable operation; sustained operation near this threshold requires careful PCB thermal design and ambient derating per the datasheet's power dissipation curves. Always reference the KSA812YMTF thermal resistance data when calculating heatsink needs.