Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSB1015Y

Name: KSB1015Y
Brand: onsemi
SKU: KSB1015Y
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: KSB1015Y

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack

Datasheet:: KSB1015Y.pdf

Description:: TRANS PNP 60V 3A TO-220F-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:7,874

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

KSB1015Y from onsemi is a PNP epitaxial silicon power transistor designed for low-frequency power amplifier and switching applications, with −60 V V_CEO, −3 A I_C, 25 W P_C at T_C = 25°C, h_FE of 100–200 at I_C = −0.5 A, and V_CE(sat) ≤ −1 V at I_C = −3 A / I_B = −0.3 A - used in audio output stages and relay drivers.

For engineers reviewing the KSB1015Y datasheet, pinout, applications, or equivalent options, key selection factors include its TO-220 Fullpack package, confirmed PNP polarity, verified safe operating area up to 25 W (derated above 25°C), and documented h_FE classification Y (100–200).

Technical Context

This device operates as a medium-power PNP bipolar junction transistor optimized for linear amplification and saturated switching in DC-to-low-MHz signal paths. Its design emphasizes low V_CE(sat) and high DC current gain stability across collector currents from −0.5 A to −3 A, with f_T = 9 MHz confirming suitability for audio-band and control-loop applications-not RF or high-speed digital switching.

Thermal performance is defined by junction-to-case thermal resistance (implied by 25 W rating at T_C = 25°C) and 150°C maximum junction temperature. The TO-220 Fullpack package enables direct heatsink mounting, supporting continuous conduction in industrial power stages where thermal management is critical.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V: Maximum allowable collector-emitter voltage before breakdown under open-base condition - sets rail voltage limit in amplifier or switch designs.
I_C (DC)	−3 A: Continuous collector current capability - supports load driving up to ~3 A in Class-A/B audio outputs or solenoid controls.
P_C @ T_C=25°C	25 W: Maximum dissipated power at case temperature 25°C - requires heatsinking for sustained operation above ambient.
h_FE (Y-class)	100–200 at V_CE = −5 V, I_C = −0.5 A: Confirmed DC current gain range - enables predictable base drive sizing in linear and switching circuits.
V_CE(sat)	≤ −1 V at I_C = −3 A, I_B = −0.3 A: Low saturation voltage minimizes conduction loss in switching applications like motor drivers.
f_T	9 MHz: Current-gain bandwidth product - validates use in audio amplifiers and feedback-controlled power supplies up to ~1 MHz.
C_ob	150 pF at V_CB = −10 V, f = 1 MHz: Output capacitance affects high-frequency roll-off and switching speed - relevant for snubber design.

Pinout & Package

Package: TO-220 Fullpack (Case 221AT), 3-lead, through-hole, Pb-free, with metal tab electrically connected to collector. Requires mechanical isolation when mounted to heatsink unless collector is at ground or common potential.

Pin/Terminal	Circuit Role	Design Meaning
1 (Left)	Base	Control terminal for forward-biased PNP operation; requires negative base current relative to emitter to turn on.
2 (Center)	Collector	Main current-carrying terminal tied to metal tab; must be electrically isolated from heatsink unless system grounding permits.
3 (Right)	Emitter	Reference terminal for base drive and current return path; typically connected to positive supply rail in PNP configurations.

Key Features

Feature	Design Value
Low V_CE(sat)	≤ −1 V at full rated current ensures <1 W conduction loss in 3 A switching loads - improves thermal margin and efficiency.
High h_FE (Y-class)	100–200 gain range reduces required base drive current - simplifies driver stage design and lowers base resistor power dissipation.
Robust SOA	Rated for 25 W at 25°C with defined derating curve - supports reliable operation in inductive load switching with controlled turn-off.
Pb-free construction	Complies with RoHS Directive 2011/65/EU - meets environmental compliance requirements for industrial and consumer end equipment.

Applications

Audio Power Amplifier	Relay/Solenoid Driver
Use Scenario: Single-ended or push-pull output stage in low-frequency audio amplifiers delivering up to 10 W into 8 Ω loads. IC Role / Device Role / Timing Role: PNP power output transistor conducting during negative half-cycle; biased in Class-A or Class-AB mode. Use Value: Low V_CE(sat) and stable h_FE minimize crossover distortion and thermal drift in analog output stages.	Use Scenario: Driving 12 V/24 V electromagnetic relays or 2 A DC solenoids in PLC I/O modules and industrial controllers. IC Role / Device Role / Timing Role: Saturated switch controlling inductive load current; base driven by microcontroller GPIO or logic buffer. Use Value: Confirmed t_ON/t_F/t_STG timing (0.4 µs / 0.5 µs / 1.7 µs) enables clean turn-on/turn-off without contact bounce or back-EMF spikes.
Motor Control (DC Brushed)	Linear Voltage Regulator Pass Element
Use Scenario: Low-side or high-side switching in 24 V DC brushed motor H-bridge half-bridges for robotics and actuation. IC Role / Device Role / Timing Role: High-current PNP switch enabling bidirectional current flow when paired with NPN complement (e.g., KSD1015). Use Value: −60 V V_CEO and 150°C T_J support operation with flyback voltages and elevated ambient temperatures in enclosed enclosures.	Use Scenario: Series pass element in adjustable linear regulators delivering up to 2 A at 5–15 V output with low dropout. IC Role / Device Role / Timing Role: Continuously biased PNP transistor regulating output voltage via emitter-follower configuration. Use Value: High h_FE and low V_BE(on) (−0.7 V typ.) reduce base drive burden and improve load regulation accuracy.

Audio Power Amplifier

Relay/Solenoid Driver

Use Scenario: Single-ended or push-pull output stage in low-frequency audio amplifiers delivering up to 10 W into 8 Ω loads.

IC Role / Device Role / Timing Role: PNP power output transistor conducting during negative half-cycle; biased in Class-A or Class-AB mode.

Use Value: Low V_CE(sat) and stable h_FE minimize crossover distortion and thermal drift in analog output stages.

Use Scenario: Driving 12 V/24 V electromagnetic relays or 2 A DC solenoids in PLC I/O modules and industrial controllers.

IC Role / Device Role / Timing Role: Saturated switch controlling inductive load current; base driven by microcontroller GPIO or logic buffer.

Use Value: Confirmed t_ON/t_F/t_STG timing (0.4 µs / 0.5 µs / 1.7 µs) enables clean turn-on/turn-off without contact bounce or back-EMF spikes.

Motor Control (DC Brushed)

Linear Voltage Regulator Pass Element

Use Scenario: Low-side or high-side switching in 24 V DC brushed motor H-bridge half-bridges for robotics and actuation.

IC Role / Device Role / Timing Role: High-current PNP switch enabling bidirectional current flow when paired with NPN complement (e.g., KSD1015).

Use Value: −60 V V_CEO and 150°C T_J support operation with flyback voltages and elevated ambient temperatures in enclosed enclosures.

Use Scenario: Series pass element in adjustable linear regulators delivering up to 2 A at 5–15 V output with low dropout.

IC Role / Device Role / Timing Role: Continuously biased PNP transistor regulating output voltage via emitter-follower configuration.

Use Value: High h_FE and low V_BE(on) (−0.7 V typ.) reduce base drive burden and improve load regulation accuracy.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD1000G	TO-263 package, −100 V V_CEO, −5 A I_C, higher P_C (30 W), h_FE 25–250 - wider gain spread and higher voltage rating.	Suitable for higher-voltage industrial controls but requires surface-mount layout and different thermal interface.	Select when >60 V blocking or SMT assembly is required; not drop-in compatible due to package and pinout differences.
KSC2383Y	NPN complement (not PNP), TO-220, +60 V V_CEO, +3 A I_C, same h_FE class Y - opposite polarity, identical footprint and gain grading.	Used only in complementary pair designs (e.g., push-pull amplifiers); cannot replace KSB1015Y alone in PNP-only circuits.	Choose only for matched NPN-PNP pairs; requires redesign if substituting into existing PNP-only topology.

Compared with MJD1000G and KSC2383Y, the KSB1015Y offers verified PNP polarity in TO-220 Fullpack with tight h_FE binning (Y-class), making it optimal for through-hole audio and relay driver designs where polarity, package, and gain consistency are non-negotiable.

Availability

KSB1015Y is available at Aetrix Electronics and suitable for audio power amplifiers, industrial relay drivers, DC motor control circuits, and linear regulator pass elements requiring stable component supply and long-term manufacturability.

Supply support for KSB1015Y includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The KSB1015Y belongs to onsemi's legacy bipolar power transistor family, engineered for robust low-frequency amplification and switching in cost-sensitive, thermally demanding industrial and consumer systems.

FAQ

What is the pin configuration of the KSB1015Y?

The KSB1015Y uses a TO-220 Fullpack (Case 221AT) package with three leads: Pin 1 is Base, Pin 2 is Collector (connected to the metal tab), and Pin 3 is Emitter. This configuration is standardized per onsemi's marking diagram and mechanical outline - no alternate pinouts are specified for this part number.

Is the KSB1015Y RoHS-compliant?

Yes, the KSB1015Y is a Pb-free device compliant with the EU RoHS Directive 2011/65/EU, as explicitly stated in the official onsemi datasheet (Publication Order Number KSB1015/D, Rev. 2, October 2024). The "TU" suffix in ordering code KSB1015YTU confirms Pb-free packaging.

What is the maximum power dissipation of the KSB1015Y at 75°C case temperature?

Per the datasheet's Figure 6 (Power Derating), the KSB1015Y's maximum collector power dissipation is linearly derated from 25 W at T_C = 25°C to 0 W at T_C = 175°C. At 75°C case temperature, the rated P_C is 15 W - calculated as 25 W × (1 − (75 − 25)/150) = 15 W.

Does the KSB1015Y have a guaranteed minimum h_FE at I_C = −3 A?

No - the datasheet specifies h_FE2 = 20 (min) only at V_CE = −5 V and I_C = −3 A. The Y-class h_FE range (100–200) applies exclusively to h_FE1 measured at I_C = −0.5 A. Designers must use h_FE2 = 20 for worst-case base drive calculations at full load.

Can the KSB1015Y be used in parallel with another KSB1015Y for higher current handling?

Parallel operation is not recommended without external emitter resistors, as the KSB1015Y exhibits negative temperature coefficient of V_BE and moderate h_FE variation. The datasheet does not specify matching or parallel-use guidelines; unbalanced current sharing may occur due to parametric spread - especially across Y-class units.

KSB1015Y Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 300mA, 3A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 500mA, 5V

Power - Max:: 25 W

Frequency - Transition:: 9MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F-3

KSB1015Y FAQ

1.How can I place an order for KSB1015Y through Aetrix?

Please submit a Request for Quotation (RFQ) for KSB1015Y on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSB1015Y reliable?

The price and inventory of KSB1015Y are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSB1015Y is usually 5 days.

3.What payment methods are accepted for KSB1015Y?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSB1015Y transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSB1015Y?

KSB1015Y orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSB1015Y order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSB1015Y?

For technical support, including KSB1015Y datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSB1015Y requirements.

6.How does Aetrix verify that KSB1015Y is sourced from the original manufacturer or authorized distributors?

All KSB1015Y products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSB1015Y meets industry standards.

7.What is the process for return or replacement of KSB1015Y?

All KSB1015Y units undergo pre-shipment inspection (PSI). If there is an issue with KSB1015Y, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSB1015Y part is unused and in its original packaging.

Return procedure for KSB1015Y:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…