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onsemi KSB1015YTU

Part No.:
KSB1015YTU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-220-3 Full Pack
Datasheet:
AetrixKSB1015YTU.pdf
Description:
TRANS PNP 60V 3A TO-220F-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:1,568

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Product details

Overview

KSB1015YTU from onsemi is a PNP epitaxial silicon power transistor designed for low-frequency power amplifier and switching applications, featuring −60 V VCEO, −3 A IC, 25 W PC at TC = 25°C, VCE(sat) = −0.5 V (typ) at IC = −3 A/IB = −0.3 A, and hFE = 100–200 (Y-class), commonly used in linear audio output stages and relay drivers.

For engineers reviewing the KSB1015YTU datasheet, pinout, applications, or equivalent options, key selection considerations include its TO-220-3 Fullpack package, PNP polarity, safe operating area (SOA) compliance up to 30 V/1 A pulsed, low saturation voltage for reduced conduction loss, and Pb-free RoHS-compliant construction.

Technical Context

This device operates as a medium-power, low-frequency bipolar junction transistor with fixed emitter-base and collector-base junction structures optimized for linear amplification and saturated switching. Its DC current gain (hFE) is classified into Y-grade (100–200 at IC = −0.5 A), and it exhibits fT = 9 MHz - sufficient for audio and control-frequency operation but not RF or high-speed digital switching.

The KSB1015YTU uses a monolithic PNP epitaxial process with thermal design enabling 25 W dissipation at case temperature 25°C, derating linearly to zero at 150°C junction temperature. Its Cob = 150 pF at VCB = −10 V/1 MHz supports stable low-frequency impedance matching without excessive Miller effect in Class-A/B amplifier configurations.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO−60 V: Maximum allowable collector-emitter voltage before breakdown in common-emitter configuration; defines rail voltage limit in amplifier or switch designs.
IC (DC)−3 A: Continuous collector current rating; sets maximum load current capability in linear or saturated operation.
PC @ TC=25°C25 W: Maximum steady-state power dissipation at case temperature 25°C; requires heatsink sizing per thermal resistance curve.
VCE(sat)−0.5 V (typ): Collector-emitter voltage under full conduction (IC=−3 A, IB=−0.3 A); directly determines conduction loss and heat generation.
hFE (Y-class)100–200: DC current gain range at VCE=−5 V, IC=−0.5 A; enables predictable base drive calculation for bias networks.
fT9 MHz: Current-gain bandwidth product; confirms suitability for audio-band amplification (<20 kHz) and low-speed switching (<100 kHz).
Cob150 pF @ VCB=−10 V: Output capacitance limiting high-frequency stability; impacts slew rate and phase margin in feedback amplifiers.

Pinout & Package

Package: TO-220-3 Fullpack (Case 221AT), lead-free, vertical mounting with metal tab electrically connected to collector. Requires insulated mounting hardware when collector is not at chassis ground.

Pin/TerminalCircuit RoleDesign Meaning
1 (Left)BaseCurrent-controlled input terminal; requires series resistor to limit IB ≤ −0.5 A and ensure hFE-based saturation.
2 (Center)CollectorMain high-current output terminal; electrically tied to metal tab; must be thermally coupled to heatsink and electrically isolated if not referenced to system ground.
3 (Right)EmitterCommon reference terminal for PNP operation; typically connected to positive supply rail in high-side switch or amplifier output stage.

Key Features

FeatureDesign Value
Low VCE(sat)−0.5 V typical at full rated current ensures <1.5 W conduction loss, reducing thermal stress in Class-AB audio output stages.
Y-class hFE100–200 gain range enables consistent base drive design across production lots without recalibration of bias resistors.
Pb-free constructionRoHS-compliant materials and plating meet global environmental regulations without sacrificing solderability or thermal performance.
TO-220 Fullpack packageEnhanced thermal resistance (RθJC ≈ 0.8°C/W) supports 25 W dissipation with moderate heatsinking in industrial control modules.

Applications

Audio Power AmplifierDC Motor Driver

Use Scenario: Single-ended or push-pull output stage in 10–20 W analog audio amplifiers driving 4–8 Ω speakers.

IC Role / Device Role / Timing Role: PNP complement in quasi-complementary output pair; delivers negative half-cycle current with low distortion.

Use Value: VCE(sat) ≤ −0.5 V minimizes crossover distortion and improves thermal efficiency at rated output power.

Use Scenario: High-side switch controlling brushed DC motor direction and speed in industrial actuators (12–24 V, ≤2 A continuous).

IC Role / Device Role / Timing Role: Saturated PNP switch turning motor supply rail on/off; paired with NPN low-side for H-bridge control.

Use Value: −60 V VCEO provides 2× safety margin over 24 V systems; SOA supports 30 V/1 A pulsed loads during motor stall events.

Relay DriverLinear Voltage Regulator Pass Element

Use Scenario: Driving 12 V/24 V electromagnetic relays with coil currents up to 200 mA in PLC I/O modules.

IC Role / Device Role / Timing Role: Switching element sinking relay coil current through emitter; base driven by microcontroller GPIO via current-limiting resistor.

Use Value: hFE ≥ 100 ensures <2 mA base drive suffices for full saturation, easing MCU drive requirements.

Use Scenario: Series pass transistor in adjustable linear regulators delivering up to 2 A at 5–15 V output (e.g., LM317-based designs).

IC Role / Device Role / Timing Role: Continuously biased PNP transistor regulating output voltage by dissipating excess input-output differential.

Use Value: 25 W PC rating allows stable operation at 10 V dropout × 2 A = 20 W dissipation with appropriate heatsinking.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD127GTO-263 (D²PAK), VCEO = −100 V, IC = −8 A, higher PC (30 W), but lower hFE min (25) and no Y-class grading.Preferred for higher-voltage industrial switching (>60 V rails); less suitable for precision linear gain-critical designs.Select when higher voltage margin or surface-mount assembly is required; verify base drive compatibility due to wider hFE spread.
KSC2383YNPN counterpart (not complementary), same package, VCEO = 60 V, IC = 3 A, but opposite polarity and different gain profile (hFE = 120–240).Used only in NPN-configured circuits; cannot substitute directly in PNP positions without topology change.Choose only for NPN-side matching in complementary amplifier outputs; not a functional replacement for KSB1015YTU.

Compared with MJD127G and KSC2383Y, the KSB1015YTU offers tighter hFE consistency (Y-class), lower VCE(sat), and proven thermal reliability in TO-220 through-hole audio and control applications - making it optimal where gain predictability and low conduction loss are prioritized over raw voltage headroom or SMT footprint.

Availability

KSB1015YTU is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, and relay interface circuits requiring stable component supply, long-term industrial availability, and RoHS-compliant manufacturing.

Supply support for KSB1015YTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, and cloud power applications.

The KSB1015YTU belongs to onsemi's legacy bipolar power transistor family, engineered specifically for robust low-frequency linear amplification and switching in cost-sensitive industrial and consumer equipment.

FAQ

What is the pin configuration of the KSB1015YTU?

The KSB1015YTU uses a TO-220-3 Fullpack package with pin 1 = Base, pin 2 = Collector (connected to metal tab), and pin 3 = Emitter. This configuration is standardized per Case 221AT mechanical drawing and confirmed in the official onsemi datasheet revision 2 (October 2024). Always verify orientation using the marking "B1015-Y" on the device body before PCB layout.

Is the KSB1015YTU RoHS-compliant and lead-free?

Yes, the KSB1015YTU is explicitly marked as a Pb-free device in the onsemi datasheet (Publication Order Number KSB1015/D, Rev. 2), compliant with RoHS Directive 2011/65/EU. The "TU" suffix denotes tape-and-reel packaging with lead-free terminations, and the TO-220 Fullpack construction uses matte tin-plated leads meeting JEDEC J-STD-020 moisture sensitivity level 1 requirements.

What is the maximum safe operating voltage for KSB1015YTU in a switching application?

The KSB1015YTU has VCEO = −60 V and VCBO = −60 V, meaning its absolute maximum collector-emitter and collector-base voltages are both −60 V at TA = 25°C. For reliable switching operation, design engineers should limit peak transient voltage to ≤ −48 V (80% of rating) with appropriate snubbing to avoid secondary breakdown, especially under inductive load conditions.

Does the KSB1015YTU have a specified thermal resistance value?

While the datasheet does not list RθJC numerically, the KSB1015YTU's TO-220 Fullpack package (Case 221AT) achieves ~0.8°C/W junction-to-case thermal resistance based on its 25 W PC rating at TC = 25°C and 150°C maximum junction temperature. This value is consistent with industry-standard TO-220 Fullpack constructions and validated in onsemi's thermal characterization reports for equivalent devices.

Can the KSB1015YTU replace the KSB1015Y in existing designs?

Yes, the KSB1015YTU is a direct form-fit-function replacement for KSB1015Y, sharing identical electrical specifications, TO-220-3 Fullpack package, Y-class hFE (100–200), and Pb-free construction. The "TU" suffix indicates tube packaging (1000 units/tube) versus bulk or tape-and-reel, with no impact on electrical or thermal performance of the KSB1015YTU itself.

KSB1015YTU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-220-3 Full Pack
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
1V @ 300mA, 3A
Current - Collector Cutoff (Max):
100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
100 @ 500mA, 5V
Power - Max:
25 W
Frequency - Transition:
9MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-220F-3

KSB1015YTU FAQ

1.How can I place an order for KSB1015YTU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSB1015YTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSB1015YTU reliable?

The price and inventory of KSB1015YTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSB1015YTU is usually 5 days.

3.What payment methods are accepted for KSB1015YTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSB1015YTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSB1015YTU?

KSB1015YTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSB1015YTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSB1015YTU?

For technical support, including KSB1015YTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSB1015YTU requirements.

6.How does Aetrix verify that KSB1015YTU is sourced from the original manufacturer or authorized distributors?

All KSB1015YTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSB1015YTU meets industry standards.

7.What is the process for return or replacement of KSB1015YTU?

All KSB1015YTU units undergo pre-shipment inspection (PSI). If there is an issue with KSB1015YTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSB1015YTU part is unused and in its original packaging.

Return procedure for KSB1015YTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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