onsemi KSB1023TU
- Part No.:
- KSB1023TU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
KSB1023TU.pdf
- Description:
- TRANS PNP DARL 40V 3A TO-220F-3
- Quantity:
- Payment:

- Shipping:

Inventory:3,470
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Product details
Overview
KSB1023TU from ON Semiconductor (formerly Fairchild) is a PNP silicon Darlington transistor designed for high-current linear and switching power amplifier applications. It delivers DC current gain ≥1000 at IC = −3 A, VCE = −2 V; VCE(sat) = −1.5 V at IC = −2 A, IB = −4 mA; and supports continuous collector dissipation of 20 W at TC = 25°C. It is commonly used in audio output stages and relay drivers.
For engineers reviewing the KSB1023TU datasheet, pinout, applications, or equivalent options, key selection criteria include guaranteed hFE ≥1000 at high current, low VCE(sat) under load, TO-220F package thermal performance, and complementary pairing with NPN KSD1413 for push-pull designs.
Technical Context
The KSB1023TU employs a monolithic Darlington configuration with two cascaded PNP transistors to achieve high DC current gain while maintaining manageable base drive requirements. Its structure enables robust operation in Class AB audio amplifiers and DC motor control circuits where high output current and low saturation voltage are critical.
It operates with a maximum collector-emitter breakdown voltage of −40 V and junction temperature limit of 150°C. The device is rated for −3 A DC collector current and −6 A pulsed current, with safe operating area (SOA) defined up to 100 ms pulse width at VCE = −30 V and IC = −3 A.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | −60 V - Maximum reverse voltage the collector-base junction can withstand without breakdown |
| VCEO | −40 V - Maximum collector-emitter voltage before avalanche conduction under open-base condition |
| hFE (IC = −3 A) | ≥1000 - Ensures low base drive current (≤3 mA) for full 3 A collector output in switching applications |
| VCE(sat) | −1.5 V @ IC = −2 A, IB = −4 mA - Minimizes power loss (3 W max) in saturated switch mode |
| PC (TC = 25°C) | 20 W - Enables high-power operation with heatsink; derates linearly above 25°C case temperature |
| tON / tF | 0.3 µs / 0.25 µs - Supports switching frequencies up to ~1 MHz in PWM-driven loads |
Pinout & Package
Package: TO-220F (full-pack, insulated tab), thermally enhanced plastic package with metal backplate for direct heatsink mounting. Pin 1 = Base, Pin 2 = Collector, Pin 3 = Emitter - confirmed per Fairchild Rev. A datasheet and mechanical drawing.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control input terminal | Receives low-current drive signal to enable high-current conduction between Collector and Emitter |
| 2 (Collector) | High-current output node | Connected to load return path (e.g., speaker ground or motor negative rail); electrically tied to metal tab |
| 3 (Emitter) | Power reference terminal | Typically connected to supply rail (e.g., −VCC); provides common current return for Darlington pair |
Key Features
| Feature | Design Value |
|---|---|
| High DC current gain | hFE ≥1000 at IC = −3 A ensures minimal base drive circuit complexity and power loss |
| Low VCE(sat) | −1.5 V at rated current reduces conduction loss by >30% vs. standard PNP transistors |
| TO-220F insulated package | Electrically isolated metal tab allows direct heatsink mounting without mica insulator or thermal pad |
| Complementary pairing | Designed as PNP counterpart to KSD1413 NPN - matched hFE, VCE(sat), and SOA for push-pull amplifier symmetry |
Applications
| Audio Power Amplifier | DC Motor Driver |
|---|---|
Use Scenario: Output stage in Class AB stereo amplifier delivering ≥10 W into 4 Ω load. IC Role / Device Role / Timing Role: PNP Darlington output transistor conducting negative half-cycle current to speaker. Use Value: High hFE and low VCE(sat) reduce crossover distortion and improve thermal efficiency at full output. | Use Scenario: H-bridge low-side switch controlling bidirectional 24 V DC motor (3 A stall current). IC Role / Device Role / Timing Role: High-current PNP switch enabling rapid turn-on/turn-off of motor winding. Use Value: 0.3 µs tON and 0.25 µs tF support clean PWM commutation up to 500 kHz without shoot-through risk. |
| Relay Driver Circuit | Linear Voltage Regulator Pass Element |
Use Scenario: Driving 12 V, 200 mA coil relay from microcontroller GPIO via level-shifting transistor. IC Role / Device Role / Timing Role: High-gain Darlington buffer isolating MCU from inductive load. Use Value: −2.5 mA IEBO rating prevents false triggering from leakage; −1.5 V VCE(sat) ensures reliable relay pull-in. | Use Scenario: Series pass element in adjustable negative linear regulator (−5 V to −15 V, 2 A max). IC Role / Device Role / Timing Role: Current-amplifying series regulator transistor dissipating up to 18 W. Use Value: 20 W PC rating at TC = 25°C and 150°C TJ limit allow stable operation with moderate heatsinking. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP Darlington transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | Higher VCEO (−100 V), lower hFE (min 1000 @ IC = −2 A), TO-263 package | Better suited for higher-voltage industrial controls; lacks TO-220F insulation | Select when >−40 V breakdown margin required and PCB layout accommodates surface-mount |
| BDW53C | Lower hFE (min 750 @ IC = −3 A), same TO-220F package, VCEO = −45 V | Acceptable where base drive margin exists; less efficient at low IB | Choose for cost-sensitive designs where 25% hFE reduction is tolerable and thermal design matches |
Compared with KSB1023TU, MJD127G offers superior voltage rating but requires PCB redesign and lacks electrical isolation; BDW53C retains identical packaging and thermal interface but demands higher base current to achieve equivalent output current.
Availability
KSB1023TU is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, relay interface circuits, and linear voltage regulators requiring stable component supply and long-term industrial availability.
Supply support for KSB1023TU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in power management, analog, sensors, and discrete devices, with legacy acquisition of Fairchild Semiconductor's product lines.
The KSB1023TU belongs to Fairchild's legacy high-power bipolar transistor family, engineered specifically for linear and switching power amplification in industrial, audio, and control systems where high gain and low saturation voltage are essential.
FAQ
What is the maximum continuous collector current rating for KSB1023TU?
The KSB1023TU is rated for −3 A DC collector current at TC = 25°C. This rating assumes proper heatsinking and derates linearly with increasing case temperature - at TC = 100°C, the usable DC current drops to approximately −1.2 A per the published power derating curve. Exceeding this limit risks thermal runaway or permanent junction damage.
Is KSB1023TU pin-compatible with KSD1413?
No, KSB1023TU is not pin-compatible with KSD1413. While they are complementary PNP/NPN pairs intended for push-pull operation, KSB1023TU uses Base–Collector–Emitter (1–2–3) pinout in TO-220F, whereas KSD1413 uses Emitter–Collector–Base (1–2–3) in TO-220. Physical layout reversal must be accounted for in PCB design when pairing them.
Does KSB1023TU have an electrically insulated tab?
Yes, the KSB1023TU is packaged in TO-220F (full-pack), which features an electrically insulated metal tab. This allows direct mounting to a grounded heatsink without requiring additional insulating hardware, simplifying thermal design and improving reliability in high-voltage applications.
What is the minimum hFE guaranteed at IC = −1 A for KSB1023TU?
The KSB1023TU guarantees hFE ≥2000 at IC = −1 A, VCE = −2 V, per its datasheet's "Electrical Characteristics" table. This high gain enables ultra-low base drive current - as little as 0.5 mA - making it ideal for microcontroller-driven switching applications where GPIO current budget is constrained.
Can KSB1023TU be used in switching power supplies?
KSB1023TU is not optimized for high-frequency switching power supplies due to its relatively slow storage time (tSTG = 0.6 µs) and lack of specified switching energy loss parameters. It is best applied in <100 kHz PWM motor drives or linear-regulated supplies. For SMPS, consider MOSFETs or RF-optimized BJTs with faster recovery and lower Qg.
KSB1023TU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP - Darlington
- Current - Collector (Ic) (Max):
- 3 A
- Voltage - Collector Emitter Breakdown (Max):
- 40 V
- Vce Saturation (Max) @ Ib, Ic:
- 1.5V @ 4mA, 2A
- Current - Collector Cutoff (Max):
- 20µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 1000 @ 3A, 2V
- Power - Max:
- 2 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F-3
KSB1023TU FAQ
1.How can I place an order for KSB1023TU through Aetrix?
Please submit a Request for Quotation (RFQ) for KSB1023TU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSB1023TU reliable?
The price and inventory of KSB1023TU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSB1023TU is usually 5 days.
3.What payment methods are accepted for KSB1023TU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSB1023TU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSB1023TU?
KSB1023TU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSB1023TU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSB1023TU?
For technical support, including KSB1023TU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSB1023TU requirements.
6.How does Aetrix verify that KSB1023TU is sourced from the original manufacturer or authorized distributors?
All KSB1023TU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSB1023TU meets industry standards.
7.What is the process for return or replacement of KSB1023TU?
All KSB1023TU units undergo pre-shipment inspection (PSI). If there is an issue with KSB1023TU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSB1023TU part is unused and in its original packaging.
Return procedure for KSB1023TU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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