onsemi KSB1097OTU
- Part No.:
- KSB1097OTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
KSB1097OTU.pdf
- Description:
- TRANS PNP 60V 7A TO-220F-3
- Quantity:
- Payment:

- Shipping:

Inventory:6,212
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
KSB1097OTU from ON Semiconductor (formerly Fairchild) is a PNP epitaxial silicon power transistor designed for low-frequency power amplification and industrial low-speed switching. It features -60 V VCEO, -7 A DC collector current, 30 W collector dissipation at TC=25°C, -1.5 V VBE(sat) at IC=-5 A/IB=-0.5 A, and TO-220F package with insulated tab.
For engineers reviewing the KSB1097OTU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area robustness, DC current gain classification (R/O/Y), VCE(sat) performance under high-current switching, thermal derating behavior, and complementary pairing with NPN KSD1588 in push-pull amplifier stages.
Technical Context
This PNP bipolar junction transistor operates in linear amplification and saturated switching modes. Its hFE ranges from 40–200 depending on classification grade (R/O/Y), with guaranteed minimum hFE1=40 at IC=-3 A and hFE2=20 at IC=-5 A. The device supports pulsed collector current up to -15 A with strict duty cycle limits.
Thermal design relies on case-mounted heatsinking: 30 W dissipation is rated only at TC=25°C, derating linearly to zero at 175°C case temperature. The insulated TO-220F package enables direct mounting without insulating washers while maintaining electrical isolation between collector and heatsink.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCEO | -60 V - Maximum allowable collector-emitter voltage before breakdown in common-emitter configuration |
| IC (DC) | -7 A - Continuous collector current capability defining steady-state power handling |
| PC (TC=25°C) | 30 W - Maximum power dissipation achievable with adequate heatsinking at case temperature 25°C |
| VCE(sat) | -0.5 V @ IC=-5 A/IB=-0.5 A - Low saturation voltage enabling efficient switching with minimal conduction loss |
| hFE1 | 40–200 - DC current gain range across R/O/Y classifications, critical for base drive sizing in amplifier/switch designs |
| TJ max | 150°C - Absolute maximum junction temperature limiting thermal design margin and reliability lifetime |
| VBE(sat) | -1.5 V @ IC=-5 A/IB=-0.5 A - Base-emitter voltage required to achieve full saturation, determining base driver voltage headroom |
Pinout & Package
Package: TO-220F (insulated tab, vertical mounting, 3-lead through-hole). Tab is electrically isolated from collector and serves as mechanical mounting surface only.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control electrode | Receives base current to bias transistor into active or saturated region; requires current-limiting resistor in most applications |
| 2 (Collector) | High-current output terminal | Connected to load or supply rail; electrically tied to metal tab in standard TO-220 but isolated in TO-220F variant |
| 3 (Emitter) | Reference terminal | Typically connected to ground or negative rail; carries full emitter current (IC + IB) |
Key Features
| Feature | Design Value |
|---|---|
| Insulated TO-220F package | Enables direct heatsink mounting without mica insulator or thermal pad, reducing thermal resistance and assembly cost |
| Complementary pairing | Designed as PNP counterpart to KSD1588 NPN transistor, facilitating matched push-pull amplifier and H-bridge output stages |
| High pulse current rating | Supports -15 A pulsed collector current (PW ≤ 300 µs, duty ≤ 10%), suitable for intermittent high-load switching |
| Low VCE(sat) | -0.5 V at -5 A ensures < 2.5 W conduction loss per device, improving efficiency in Class-AB audio and motor drive outputs |
Applications
| Audio Power Amplifier Output Stage | Industrial Relay Driver |
|---|---|
Use Scenario: Final output stage of Class-AB audio amplifier delivering up to 30 W into 8 Ω loads. IC Role / Device Role / Timing Role: PNP power transistor providing negative half-cycle current sourcing in complementary symmetry topology. Use Value: Low VCE(sat) minimizes crossover distortion and heat generation; hFE classification allows precise matching with KSD1588 for balanced gain. | Use Scenario: Driving 24 VDC industrial control relays requiring >5 A inrush current handling. IC Role / Device Role / Timing Role: High-current saturated switch controlling relay coil energization/de-energization. Use Value: -15 A pulse rating accommodates relay coil inrush; TO-220F insulation eliminates need for isolating hardware during panel-mount installation. |
| DC Motor Direction Control | Linear Voltage Regulator Pass Element |
Use Scenario: Low-speed bidirectional DC motor control in factory automation systems using discrete H-bridge. IC Role / Device Role / Timing Role: Upper-leg PNP switch in H-bridge configuration enabling reverse polarity motor drive. Use Value: -60 V VCEO provides margin against inductive kickback; 30 W TC-rated dissipation supports continuous 1 A motor current with heatsink. | Use Scenario: Series pass element in adjustable linear regulator supplying stable 5–12 V at up to 3 A for embedded controllers. IC Role / Device Role / Timing Role: Linear-mode current amplifier regulating output by dissipating excess input-output voltage difference. Use Value: High hFE (up to 200) reduces required base drive current; 150°C TJ rating supports operation under sustained thermal stress. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar PNP power transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | VCEO = -100 V, IC = -8 A, TO-252 (DPAK) surface-mount package, no insulated tab | Suitable for PCB space-constrained designs but requires thermal pad layout and lacks TO-220F's mechanical rigidity | Select when automated assembly and board-level thermal management are prioritized over field-serviceable heatsink mounting |
| BD139 | VCEO = -80 V, IC = -1.5 A, TO-126 package, lower power (12.5 W), no insulation | Limited to medium-power applications; insufficient for >3 A continuous loads or high-pulse scenarios | Choose only for cost-sensitive, low-current linear amplifiers where KSB1097OTU's 30 W rating is unnecessary |
Compared with MJD127G and BD139, the KSB1097OTU uniquely combines TO-220F insulation, 30 W TC-rated dissipation, and -7 A DC current in a through-hole format-making it optimal for serviceable, high-reliability industrial power stages where mechanical robustness and thermal accessibility matter.
Availability
KSB1097OTU is available at Aetrix Electronics and suitable for audio power amplifiers, industrial relay drivers, DC motor direction control circuits, and linear voltage regulator pass elements requiring stable component supply and long-term industrial availability.
Supply support for KSB1097OTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor (acquired Fairchild Semiconductor in 2016) is a global semiconductor supplier focused on energy-efficient electronics for automotive, industrial, cloud computing, and IoT applications.
The KSB1097OTU belongs to Fairchild's legacy discrete power transistor family, engineered specifically for ruggedized industrial amplification and switching where reliability under thermal stress and mechanical durability are primary design requirements.
FAQ
What is the pin configuration of the KSB1097OTU?
The KSB1097OTU uses a standard TO-220F pinout: Pin 1 is Base, Pin 2 is Collector, and Pin 3 is Emitter. The metal tab is electrically insulated from the collector, enabling direct heatsink mounting without additional isolation hardware. This configuration is confirmed in the original Fairchild datasheet Rev. A (February 2000) and maintained across ON Semiconductor's product documentation for KSB1097OTU.
Is the KSB1097OTU suitable for audio amplifier output stages?
Yes, the KSB1097OTU is explicitly designated as a "Low Frequency Power Amplifier" device in its datasheet and optimized for Class-AB output stages. Its -0.5 V VCE(sat) at -5 A, hFE classification system (R/O/Y), and complementary pairing with KSD1588 make KSB1097OTU well-suited for high-fidelity, thermally stable audio power amplification up to 30 W per channel.
What is the maximum pulsed collector current rating for KSB1097OTU?
The KSB1097OTU supports a pulsed collector current (ICP) of -15 A under conditions of pulse width ≤ 300 µs and duty cycle ≤ 10%. This rating is specified in the Absolute Maximum Ratings table and validated by Safe Operating Area (SOA) curves in the datasheet, making KSB1097OTU appropriate for short-duration overload or inrush current handling.
Does the KSB1097OTU have an insulated tab, and why does it matter?
Yes, the "OTU" suffix denotes the TO-220F package with electrically insulated tab. Unlike standard TO-220, this insulation eliminates the need for mica washers or silicone pads when mounting to grounded heatsinks-reducing thermal resistance, assembly time, and failure risk from insulator degradation. This feature is integral to KSB1097OTU's industrial reliability profile.
How does the hFE classification (R/O/Y) affect KSB1097OTU selection?
The KSB1097OTU is manufactured in three hFE bins: R (40–80), O (60–120), and Y (100–200). Designers select based on required base drive strength and gain matching-e.g., Y-grade enables lower base current in linear regulators, while R-grade offers tighter tolerance for predictable saturation in switching applications. All grades share identical absolute maximum ratings and thermal specs in KSB1097OTU.
KSB1097OTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- PNP
- Current - Collector (Ic) (Max):
- 7 A
- Voltage - Collector Emitter Breakdown (Max):
- 60 V
- Vce Saturation (Max) @ Ib, Ic:
- 500mV @ 500mA, 5A
- Current - Collector Cutoff (Max):
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 60 @ 3A, 1V
- Power - Max:
- 2 W
- Frequency - Transition:
- -
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220F-3
KSB1097OTU FAQ
1.How can I place an order for KSB1097OTU through Aetrix?
Please submit a Request for Quotation (RFQ) for KSB1097OTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSB1097OTU reliable?
The price and inventory of KSB1097OTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSB1097OTU is usually 5 days.
3.What payment methods are accepted for KSB1097OTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSB1097OTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSB1097OTU?
KSB1097OTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSB1097OTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSB1097OTU?
For technical support, including KSB1097OTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSB1097OTU requirements.
6.How does Aetrix verify that KSB1097OTU is sourced from the original manufacturer or authorized distributors?
All KSB1097OTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSB1097OTU meets industry standards.
7.What is the process for return or replacement of KSB1097OTU?
All KSB1097OTU units undergo pre-shipment inspection (PSI). If there is an issue with KSB1097OTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSB1097OTU part is unused and in its original packaging.
Return procedure for KSB1097OTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
KSB1097OTU Tags

-
MMBT3906LT1G
onsemi

-
MMBT3904-7-F
Diodes Incorporated

-
MMBT3904LT1G
onsemi

-
MMBT3906-7-F
Diodes Incorporated

-
MMBT3904-TP
Micro Commercial Co

-
MMBT2222A-7-F
Diodes Incorporated

-
BC846BLT1G
onsemi

-
BC847B,215
Nexperia USA Inc.

-
SMMBT3904LT1G
onsemi

-
MMBT2222A-TP
Micro Commercial Co

-
MMBTA06LT1G
onsemi

-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…

