onsemi KSB1116ALBU

Overview

KSB1116ALBU from Fairchild Semiconductor is a PNP epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications. It features V_CEO = −60 V, I_C = −1 A (DC), P_C = 0.75 W, h_FE = 135–600 (depending on grade), and TO-92 package. It serves as a complement to KSD1616/1616A in push-pull amplifier stages.

For engineers reviewing the KSB1116ALBU datasheet, pinout, applications, or equivalent options, key selection criteria include its −60 V V_CEO, −1 A continuous collector current, low V_CE(sat) of −0.2 V at −1 A/−50 mA, TO-92 mechanical compatibility, and h_FE classification per Y/G/L suffixes.

Technical Context

This PNP bipolar junction transistor operates with emitter-grounded configuration in linear and saturated switching modes. Its DC current gain (h_FE) is specified at two test points: 135–600 at V_CE = −2 V with I_C = −100 mA or −1 A, enabling stable biasing across audio and switching loads.

Switching performance is characterized by t_ON = 0.07 µs, t_STG = 0.7 µs, and t_F = 0.07 µs under defined pulse conditions (V_CC = −10 V, I_C = −100 mA, I_B1 = I_B2 = −10 mA), supporting medium-speed digital and analog signal control up to ~120 MHz f_T.

Key Specifications

Pinout & Package

Package: TO-92 - Three-lead through-hole plastic package with standard 1.27 mm lead pitch, 3.60 mm body width, and 4.58 mm height; suitable for manual assembly and wave soldering.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP bipolar transistor applications.

Compared with MJD112 and KSA992, the KSB1116ALBU uniquely balances TO-92 form factor, −60 V ruggedness, and −1 A capability-making it optimal for space-constrained, medium-voltage amplifier and switching designs where thermal management is feasible within 0.75 W.

Availability

KSB1116ALBU is available at Aetrix Electronics and suitable for audio power amplifiers, relay drivers, DC motor controls, and linear regulator pass elements requiring stable component supply and long-term obsolescence management.

Supply support for KSB1116ALBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in power management, analog, and discrete components before its acquisition by ON Semiconductor in 2016.

The KSB1116ALBU belongs to Fairchild's legacy audio and general-purpose bipolar transistor family, engineered for cost-effective, reliable performance in consumer audio, industrial control, and power interface circuits.

FAQ

What is the maximum collector-emitter voltage rating for KSB1116ALBU?

The KSB1116ALBU has a maximum collector-emitter voltage (V_CEO) rating of −60 V at T_A = 25°C. This rating applies to the KSB1116A variant, which the "LBU" suffix identifies. Exceeding this voltage risks avalanche breakdown and permanent device failure. Derating is required at elevated ambient temperatures per the Safe Operating Area curve in the original Fairchild datasheet.

Is KSB1116ALBU pin-compatible with other TO-92 PNP transistors like KSA992?

KSB1116ALBU uses standard TO-92 pinout (1: Emitter, 2: Collector, 3: Base), matching KSA992 and most general-purpose TO-92 PNP transistors. However, direct substitution requires verification of V_CEO, I_C, h_FE, and V_CE(sat) - KSA992 offers only −30 V V_CEO and −0.7 A I_C, making it unsuitable as a drop-in replacement in −60 V or −1 A applications.

What does the "LBU" suffix indicate in KSB1116ALBU?

The "LBU" suffix denotes Fairchild's packaging and grading code: "L" indicates the h_FE classification (300–600 at I_C = −100 mA), "B" specifies TO-92 package, and "U" signifies tape-and-reel packaging for automated assembly. This distinguishes it from KSB1116AY (Y-grade, h_FE 135–270) and KSB1116AG (G-grade, h_FE 200–400).

Can KSB1116ALBU be used in switching power supplies?

KSB1116ALBU is not recommended for high-frequency switching power supplies (e.g., >100 kHz SMPS) due to limited f_T (70–120 MHz) and relatively high storage time (t_STG = 0.7 µs), which increase switching losses. It is better suited for medium-speed (<5 MHz) applications like relay drivers, PWM motor control, or audio output stages-not primary-side MOSFET gate drivers or DC-DC converter switches.

Does KSB1116ALBU require a base resistor in switching applications?

Yes, KSB1116ALBU requires an external base resistor to limit I_B and ensure saturation. For example, at I_C = −1 A and minimum h_FE = 135, I_B ≥ −7.4 mA is needed; with V_BE(on) ≈ −0.65 V and 3.3 V GPIO drive, a 330 Ω resistor delivers ~9 mA I_B, guaranteeing robust saturation and low V_CE(sat) in the KSB1116ALBU.