onsemi KSB1116LTA

Overview

KSB1116LTA from Fairchild Semiconductor is a PNP epitaxial silicon transistor designed for audio frequency power amplification and medium-speed switching applications. It features V_CEO = −50 V, I_C = −1 A (DC), P_C = 0.75 W, h_FE = 135–600 (class-dependent), and TO-92 package - commonly used in low-power audio output stages and relay drivers.

For engineers reviewing the KSB1116LTA datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, guaranteed −1 A DC collector current capability, −50 V V_CEO rating, TO-92 mechanical compatibility, and h_FE classification consistency across production lots.

Technical Context

This device operates as a general-purpose PNP bipolar junction transistor with complementary pairing to KSD1616/1616A NPN types. Its design supports linear amplification at audio frequencies (up to ~120 MHz f_T) and clean digital switching with t_ON/t_F ≤ 0.07 µs and t_STG ≤ 0.7 µs under specified pulse conditions.

Thermal performance is defined by T_J = 150°C maximum junction temperature and derated power dissipation above 25°C ambient. Safe operating area (SOA) curves confirm stable operation up to −1 A at −50 V with 10 ms pulse width and 50% duty cycle.

Key Specifications

Pinout & Package

Package: TO-92 - 3-lead through-hole plastic package with standard 1.27 mm lead pitch, 4.58 mm body height, and 3.60 mm body width; optimized for manual assembly and low-cost PCB layouts.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Compared with MJD2955G and KSA992F, the KSB1116LTA offers optimal balance of TO-92 form factor, −50 V/−1 A capability, and classified h_FE, making it ideal for mid-range audio and control applications where thermal and voltage margins are well-defined.

Availability

KSB1116LTA is available at Aetrix Electronics and suitable for audio amplifier design, relay interface development, and low-power DC motor control requiring stable component supply and long-term manufacturing continuity.

Supply support for KSB1116LTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in analog and discrete power devices, acquired by ON Semiconductor in 2016.

The KSB1116LTA belongs to Fairchild's legacy general-purpose bipolar transistor family, engineered for cost-effective, reliable audio and switching functions in consumer and industrial electronics.

FAQ

What is the maximum continuous collector current rating for KSB1116LTA?

The KSB1116LTA has a maximum DC collector current rating of −1 A at T_A = 25°C. This value decreases with rising ambient temperature per the power derating curve in the datasheet. Operation above this limit risks thermal runaway or permanent junction damage. Always verify actual I_C under worst-case bias and load conditions before finalizing the KSB1116LTA in your design.

Is KSB1116LTA pin-compatible with KSB1116 or KSB1116A variants?

Yes - KSB1116LTA shares identical TO-92 pinout (Emitter-Collector-Base) and mechanical dimensions with KSB1116 and KSB1116A. The "LTA" suffix denotes tape-and-reel packaging and same electrical specifications as the base KSB1116 grade, including V_CEO = −50 V and h_FE classification per Y/G/L bins. No PCB changes are needed when substituting within this family.

What is the typical hFE range for KSB1116LTA, and how is it classified?

The KSB1116LTA is offered in three h_FE classifications: Y (135–270), G (200–400), and L (300–600), measured at V_CE = −2 V and I_C = −100 mA. The "L" grade is most common in standard distribution and provides highest gain consistency for amplifier bias networks. Each KSB1116LTA unit is binned and marked accordingly on the package.

Can KSB1116LTA be used in linear amplifier applications?

Yes - the KSB1116LTA is explicitly characterized for audio frequency power amplification, with f_T up to 120 MHz and low distortion in common-emitter configurations. Its linear region is validated by static characteristic curves and h_FE stability over I_C. For best linearity, operate within V_CE > −5 V and I_C < −500 mA, and use emitter degeneration resistors to stabilize Q-point in the KSB1116LTA amplifier stage.

What is the safe operating area (SOA) limitation for KSB1116LTA in pulse applications?

The KSB1116LTA SOA allows up to −1 A at −50 V for 10 ms pulses with ≤50% duty cycle, as defined in the datasheet. Exceeding these boundaries risks secondary breakdown. For repetitive switching, limit peak I_C × V_CE to ≤ 0.75 W average, and ensure adequate PCB copper area or minimal heatsinking to maintain T_J < 150°C during KSB1116LTA operation.