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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSB1151YS

Name: KSB1151YS
Brand: onsemi
SKU: KSB1151YS
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSB1151YS

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: KSB1151YS.pdf

Description:: TRANS PNP 60V 5A TO-126-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

KSB1151YS from onsemi (formerly Fairchild Semiconductor) is a PNP epitaxial silicon power transistor in TO-126 package, rated for −60 V V_CEO, −5 A DC collector current, and 20 W collector dissipation at T_C = 25°C. It delivers low saturation voltage (V_CE(sat) = −0.14 V typ. at I_C = −2 A, I_B = −0.2 A) and high DC current gain (h_FE = 100–400 depending on operating point), suited for linear power amplification and switching in industrial DC-DC converters.

For engineers reviewing the KSB1151YS datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, TO-126 thermal performance, −60 V breakdown rating, pulse current capability (−8 A), and complementary pairing with KSD1691 NPN transistors in push-pull output stages.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor optimized for linear and switching applications where low V_CE(sat) and robust safe operating area (SOA) are critical. Its h_FE classification (O/Y/G) defines gain bins across I_C = −0.1 A to −5 A, enabling consistent biasing in Class AB amplifier designs.

The TO-126 package provides direct case-to-heatsink thermal conduction, supporting 20 W dissipation at T_C = 25°C with derating above 25°C. SOA curves confirm operation up to 2 ms pulse width under s/b-limited conditions and DC-limited operation up to 200 ms at full rated current.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V: Maximum collector-emitter voltage before breakdown under open-base condition; sets DC rail limit in power stage design.
I_C (DC)	−5 A: Continuous collector current capability; determines maximum sustained load current in regulator or driver circuits.
P_C (T_C=25°C)	20 W: Maximum power dissipation with case temperature held at 25°C; requires heatsink sizing per derating curve.
V_CE(sat)	−0.14 V (typ): Low saturation voltage at I_C = −2 A / I_B = −0.2 A; minimizes conduction loss in switching applications.
h_FE (I_C = −2 A)	100–400: DC current gain range across Y/G classifications; enables stable base drive design for fixed-gain amplifiers.
t_ON/t_F	0.15–1 µs / 0.18–1 µs: Fast switching times support operation up to ~1 MHz in hard-switched topologies.

Pinout & Package

Package: TO-126 - three-lead, through-hole, thermally enhanced plastic package with metal tab electrically connected to collector; designed for direct mounting to heatsink with insulating washer.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitter terminal of PNP transistor	Connected to most positive supply rail in common-emitter configurations; carries full load current.
2 (Collector)	Collector terminal of PNP transistor	Electrically tied to metal tab; must be isolated from heatsink unless system ground reference permits direct thermal path.
3 (Base)	Control electrode for minority-carrier injection	Receives negative base current to turn on; requires current-limiting resistor in discrete driver circuits.

Key Features

Feature	Design Value
Low V_CE(sat)	−0.14 V typical at I_C = −2 A ensures <140 mW conduction loss per transistor in saturated switching.
High I_C rating	−5 A DC / −8 A pulse supports high-current output stages without paralleling devices.
Robust SOA	Forward-bias SOA extends to −5 A / −60 V at DC, enabling reliable operation in inductive load switching.
Complementary pairing	Designed as PNP counterpart to KSD1691 NPN, facilitating matched push-pull amplifier and H-bridge designs.

Applications

Audio Power Amplifier Output Stage	Industrial DC-DC Converter Switch
Use Scenario: Class AB push-pull output stage delivering 10–20 W into 4 Ω or 8 Ω loads in analog audio equipment. IC Role / Device Role / Timing Role: PNP power transistor providing current sourcing capability during positive half-cycle of audio signal. Use Value: Low V_CE(sat) reduces crossover distortion and thermal stress; matched h_FE binning ensures symmetric gain with complementary KSD1691.	Use Scenario: High-side switch in non-isolated buck or linear regulator for 12–48 V industrial control rails. IC Role / Device Role / Timing Role: PNP pass transistor regulating output voltage via base-controlled emitter-follower configuration. Use Value: 20 W T_C-based dissipation supports continuous 1 A @ 12 V drop without forced cooling; SOA validated for inductive kickback.
Motor Drive Half-Bridge Leg	Linear Regulator Pass Element
Use Scenario: Upper-leg switch in brushed DC motor H-bridge driving 24 V / 3 A loads in factory automation actuators. IC Role / Device Role / Timing Role: PNP high-side switch controlled by level-shifted base drive to enable bidirectional motor control. Use Value: −60 V V_CEO accommodates back-EMF spikes; fast t_ON/t_F (<1 µs) limits switching loss during PWM commutation.	Use Scenario: Series pass element in adjustable linear regulator supplying precision analog circuitry from unregulated 24 V input. IC Role / Device Role / Timing Role: Voltage-controlled current source dissipating excess input-output differential as heat. Use Value: Stable h_FE over I_C range enables predictable base current calculation; TO-126 tab allows direct heatsink attachment for 15 W steady-state dissipation.

Audio Power Amplifier Output Stage

Industrial DC-DC Converter Switch

Use Scenario: Class AB push-pull output stage delivering 10–20 W into 4 Ω or 8 Ω loads in analog audio equipment.

IC Role / Device Role / Timing Role: PNP power transistor providing current sourcing capability during positive half-cycle of audio signal.

Use Value: Low V_CE(sat) reduces crossover distortion and thermal stress; matched h_FE binning ensures symmetric gain with complementary KSD1691.

Use Scenario: High-side switch in non-isolated buck or linear regulator for 12–48 V industrial control rails.

IC Role / Device Role / Timing Role: PNP pass transistor regulating output voltage via base-controlled emitter-follower configuration.

Use Value: 20 W T_C-based dissipation supports continuous 1 A @ 12 V drop without forced cooling; SOA validated for inductive kickback.

Motor Drive Half-Bridge Leg

Linear Regulator Pass Element

Use Scenario: Upper-leg switch in brushed DC motor H-bridge driving 24 V / 3 A loads in factory automation actuators.

IC Role / Device Role / Timing Role: PNP high-side switch controlled by level-shifted base drive to enable bidirectional motor control.

Use Value: −60 V V_CEO accommodates back-EMF spikes; fast t_ON/t_F (<1 µs) limits switching loss during PWM commutation.

Use Scenario: Series pass element in adjustable linear regulator supplying precision analog circuitry from unregulated 24 V input.

IC Role / Device Role / Timing Role: Voltage-controlled current source dissipating excess input-output differential as heat.

Use Value: Stable h_FE over I_C range enables predictable base current calculation; TO-126 tab allows direct heatsink attachment for 15 W steady-state dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD112	TO-252 (DPAK) surface-mount package; −60 V V_CEO, −2 A I_C, lower P_C (1.5 W @ T_A)	Not suitable for same power level; requires PCB layout change and thermal redesign.	Select when space-constrained SMT assembly is required and load current ≤2 A.
BD711	TO-126 package; −100 V V_CEO, −12 A I_C, higher P_C (30 W @ T_C), slower switching (t_F ≈ 2 µs)	Over-specified voltage/current; larger die increases storage time and reduces switching efficiency.	Select only if higher breakdown or current headroom is mandatory and thermal margin exceeds requirement.

Compared with MJD112 and BD711, the KSB1151YS offers optimal balance of TO-126 thermal performance, −60 V/−5 A rating, and sub-microsecond switching-making it uniquely suited for legacy through-hole power stages where replacement must preserve mechanical and thermal interface.

Availability

KSB1151YS is available at Aetrix Electronics and suitable for industrial motor drives, analog audio amplifiers, linear regulators, and DC-DC converter output stages requiring stable component supply and long-term BOM continuity.

Supply support for KSB1151YS includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly Fairchild Semiconductor) is a global semiconductor supplier focused on energy-efficient power management, analog, sensing, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The KSB1151YS belongs to onsemi's legacy discrete power transistor family, engineered for high-reliability linear and switching applications in industrial control and audio systems where proven thermal stability and SOA robustness are prioritized over ultra-high frequency operation.

FAQ

What is the pin configuration of the KSB1151YS?

The KSB1151YS uses a TO-126 package with standardized pinout: Pin 1 is Emitter, Pin 2 is Collector (connected to metal tab), and Pin 3 is Base. This configuration is confirmed in the official onsemi datasheet Rev. 3 (July 2025) and matches industry-standard TO-126 mechanical drawings. The KSB1151YS must be mounted with electrical isolation between tab and heatsink unless circuit topology permits collector-to-chassis grounding.

Is the KSB1151YS still in active production?

No-the KSB1151YS is marked "DISCONTINUED" and "NOT RECOMMENDED FOR NEW DESIGN" in the official onsemi datasheet. However, Aetrix Electronics maintains legacy inventory and supports existing production programs with traceable, date-code-verified stock. The KSB1151YS remains viable for repair, maintenance, and long-life industrial deployments where redesign is not feasible.

What is the maximum safe operating temperature for the KSB1151YS?

The KSB1151YS has a maximum junction temperature (T_J) of 150°C and storage temperature range of −55°C to +150°C. Safe operation requires maintaining T_J ≤ 150°C via proper heatsinking-derating begins at T_C > 25°C per the published power derating curve. At T_C = 100°C, the KSB1151YS is rated for ≤10 W dissipation. Exceeding T_J risks permanent parametric shift or failure.

How does the hFE classification (Y/G) affect KSB1151YS performance?

The KSB1151YS is binned into h_FE classes: Y (160–320) and G (200–400) at V_CE = −1 V, I_C = −2 A. This binning ensures predictable base drive requirements-e.g., a G-bin KSB1151YS needs ~25% less base current than an O-bin part at same I_C. Designers should specify h_FE grade when ordering the KSB1151YS to guarantee consistent biasing in production assemblies.

Can the KSB1151YS be used as a direct replacement for KSB1151?

Yes-the KSB1151YS is a suffix variant of the KSB1151, sharing identical electrical specifications, TO-126 package, pinout, and thermal characteristics. The "YS" suffix typically denotes tape-and-reel packaging or minor internal process revision with no functional impact. All absolute maximum ratings, electrical characteristics, and SOA curves in the datasheet apply identically to the KSB1151YS, confirming full interchangeability with KSB1151 in existing designs.

KSB1151YS Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Bulk

Product Status:: Last Time Buy

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 5 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 2A, 1V

Power - Max:: 1.3 W

Frequency - Transition:: -

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126-3

KSB1151YS FAQ

1.How can I place an order for KSB1151YS through Aetrix?

Please submit a Request for Quotation (RFQ) for KSB1151YS on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSB1151YS reliable?

The price and inventory of KSB1151YS are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSB1151YS is usually 5 days.

3.What payment methods are accepted for KSB1151YS?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSB1151YS transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSB1151YS?

KSB1151YS orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSB1151YS order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSB1151YS?

For technical support, including KSB1151YS datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSB1151YS requirements.

6.How does Aetrix verify that KSB1151YS is sourced from the original manufacturer or authorized distributors?

All KSB1151YS products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSB1151YS meets industry standards.

7.What is the process for return or replacement of KSB1151YS?

All KSB1151YS units undergo pre-shipment inspection (PSI). If there is an issue with KSB1151YS, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSB1151YS part is unused and in its original packaging.

Return procedure for KSB1151YS:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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