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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSB1366G

Name: KSB1366G
Brand: onsemi
SKU: KSB1366G
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSB1366G

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3 Full Pack

Datasheet:: KSB1366G.pdf

Description:: TRANS PNP 60V 3A TO-220F-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

KSB1366G from onsemi is a PNP epitaxial silicon power transistor designed for low-frequency power amplifier and switching applications, with −60 V V_CEO, −3 A I_C(DC), 25 W P_C(T_C = 25°C), h_FE of 100–320 (grade G), and TO-220 Fullpack package. It serves in audio output stages and DC-DC converter switches where robust current handling and thermal stability are required.

For engineers reviewing the KSB1366G datasheet, pinout, applications, or equivalent options, key selection considerations include its complementary pairing with KSD2012, safe operating area at DC/pulsed conditions, V_CE(sat) ≤ −1 V at −2 A/−0.2 A drive, and Pb-free TO-220 Fullpack mechanical compatibility.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor optimized for linear amplification and hard-switching in <10 MHz applications. Its f_T of 9 MHz and h_FE classification (G: 150–320 at I_C = −0.5 A) support stable gain in Class AB audio stages and regulated power supplies.

The KSB1366G features symmetrical absolute maximum ratings: −60 V V_CBO/V_CEO, −7 V V_EBO, and 150°C T_J, enabling use in dual-rail or negative-rail circuits. Its 25 W collector dissipation at T_C = 25°C requires heatsinking for sustained >2 A operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V - supports operation in −48 V telecom rails and industrial −24 V systems without breakdown
I_C(DC)	−3 A - delivers sufficient current for 10–15 W audio output stages or 24 V/3 A DC-DC switch legs
P_C(T_C)	25 W - enables high-power dissipation when mounted on ≥25 cm² aluminum heatsink at 25°C case temperature
h_FE (G grade)	150–320 - ensures predictable base drive requirements across production lots for stable bias design
V_CE(sat)	≤ −1 V @ I_C = −2 A, I_B = −0.2 A - minimizes conduction loss and heat generation in saturated switching
f_T	9 MHz - suitable for audio band amplification and low-speed PWM control, not RF or high-speed digital

Pinout & Package

Package: TO-220 Fullpack (Case 221AT), insulated tab, vertical mounting orientation, 3-lead through-hole package with integral heatsink interface.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives forward-biased current to turn on PNP conduction; requires current-limiting resistor in series
2 (Collector)	High-current sink	Connected to negative supply rail in common-emitter configuration; electrically tied to metal tab
3 (Emitter)	Output reference	Typically connected to load or positive rail; provides return path for collector current

Key Features

Feature	Design Value
Pb-free construction	Meets RoHS Directive 2011/65/EU and JEDEC J-STD-609A standard for lead-free terminal finish
Complementary pair	Designed as direct counterpart to NPN KSD2012, enabling matched push-pull amplifier designs
High h_FE consistency	G-grade binning (150–320) reduces base drive variation across units in production assemblies
Robust SOA	DC-rated safe operating area up to −3 A/−60 V enables reliable operation without secondary breakdown in linear mode

Applications

Audio Power Amplifier	Linear Voltage Regulator
Use Scenario: Output stage in discrete Class AB audio amplifiers delivering 10–15 W into 4–8 Ω loads. IC Role / Device Role / Timing Role: PNP power transistor in complementary emitter-follower or push-pull configuration. Use Value: Delivers low-distortion output with V_CE(sat) ≤ −1 V and h_FE ≥ 150, minimizing crossover distortion and thermal drift.	Use Scenario: Pass element in adjustable negative-voltage linear regulators (e.g., −5 V to −24 V). IC Role / Device Role / Timing Role: Series pass transistor controlling current flow from unregulated negative input to regulated output. Use Value: Handles up to −3 A continuous current with 25 W thermal headroom, supporting high-current regulation without external current limiting.
DC-DC Converter Switch	Industrial Motor Driver Stage
Use Scenario: Low-side switch in non-synchronous buck or flyback converters operating below 100 kHz. IC Role / Device Role / Timing Role: Saturated PNP switch turning on/off energy transfer to inductive load. Use Value: Achieves fast turn-on with V_BE(on) ≈ −0.7 V and low V_CE(sat), reducing conduction losses in pulsed operation.	Use Scenario: H-bridge half-bridge leg in 24 V brushed DC motor drivers for factory automation. IC Role / Device Role / Timing Role: High-side PNP switch controlling motor voltage polarity in bidirectional control. Use Value: Withstands −60 V transients and −3 A stall currents, enabling robust operation under motor back-EMF and overload conditions.

Audio Power Amplifier

Linear Voltage Regulator

Use Scenario: Output stage in discrete Class AB audio amplifiers delivering 10–15 W into 4–8 Ω loads.

IC Role / Device Role / Timing Role: PNP power transistor in complementary emitter-follower or push-pull configuration.

Use Value: Delivers low-distortion output with V_CE(sat) ≤ −1 V and h_FE ≥ 150, minimizing crossover distortion and thermal drift.

Use Scenario: Pass element in adjustable negative-voltage linear regulators (e.g., −5 V to −24 V).

IC Role / Device Role / Timing Role: Series pass transistor controlling current flow from unregulated negative input to regulated output.

Use Value: Handles up to −3 A continuous current with 25 W thermal headroom, supporting high-current regulation without external current limiting.

DC-DC Converter Switch

Industrial Motor Driver Stage

Use Scenario: Low-side switch in non-synchronous buck or flyback converters operating below 100 kHz.

IC Role / Device Role / Timing Role: Saturated PNP switch turning on/off energy transfer to inductive load.

Use Value: Achieves fast turn-on with V_BE(on) ≈ −0.7 V and low V_CE(sat), reducing conduction losses in pulsed operation.

Use Scenario: H-bridge half-bridge leg in 24 V brushed DC motor drivers for factory automation.

IC Role / Device Role / Timing Role: High-side PNP switch controlling motor voltage polarity in bidirectional control.

Use Value: Withstands −60 V transients and −3 A stall currents, enabling robust operation under motor back-EMF and overload conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
KSB1152G	Same TO-220 Fullpack package; lower V_CEO (−40 V) and I_C (−2 A); h_FE 100–240 (G grade)	Suitable only for ≤−36 V systems; limited to ≤10 W audio or ≤15 V/2 A regulators	Select when lower voltage/current rating suffices and cost optimization is prioritized over margin.
MJD127G	TO-220AB package (non-insulated tab); same −60 V/−3 A ratings; h_FE 20–120 (no grade binning)	Requires insulating washer for heatsink mounting; wider h_FE spread increases base drive design uncertainty	Choose when mechanical interchangeability with legacy MJD127 designs is required and thermal isolation is managed externally.

Compared with KSB1366G, KSB1152G trades voltage/current headroom for cost, while MJD127G sacrifices thermal insulation and h_FE consistency for broad industry familiarity-neither offers drop-in replacement without layout or bias redesign.

Availability

KSB1366G is available at Aetrix Electronics and suitable for audio power amplifiers, linear voltage regulators, and industrial DC-DC converters requiring stable component supply, consistent h_FE grading, and Pb-free compliance.

Supply support for KSB1366G includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier focused on energy-efficient electronics, with leadership in power management, analog, sensors, and logic devices.

The KSB1366G belongs to onsemi's discrete bipolar power transistor product line, engineered for high-reliability linear and switching applications in industrial, automotive, and audio systems where ruggedness and parameter consistency are critical.

FAQ

What is the pin configuration of the KSB1366G?

The KSB1366G uses a TO-220 Fullpack package with pin 1 as Base, pin 2 as Collector (electrically connected to the metal tab), and pin 3 as Emitter. This configuration is confirmed in the official onsemi datasheet (KSB1366/D, Rev 1, April 2024) and matches the mechanical outline CASE 221AT. Mounting requires electrical isolation of the tab unless the collector is referenced to chassis ground.

Is the KSB1366G RoHS-compliant and lead-free?

Yes, the KSB1366G is explicitly marked as a Pb-free device in the onsemi datasheet, meeting RoHS Directive 2011/65/EU requirements. The "G" suffix denotes both h_FE grade and Pb-free terminal finish per JEDEC J-STD-609A. No lead content is present in solderable surfaces or internal construction.

How does the KSB1366G compare to its complementary NPN counterpart KSD2012?

The KSB1366G is the designated PNP complement to the NPN KSD2012, sharing identical voltage/current ratings (−60 V/−3 A vs. +60 V/+3 A), TO-220 Fullpack packaging, and thermal performance (25 W P_C). Their matched h_FE ranges and SOA curves enable balanced push-pull amplifier designs without gain skew or thermal runaway risk.

What is the maximum continuous collector current for the KSB1366G?

The KSB1366G has a rated DC collector current (I_C) of −3 A, as specified in the Absolute Maximum Ratings table of the onsemi datasheet. This value assumes proper heatsinking to maintain case temperature ≤25°C; derating applies above 25°C per the power derating curve (Figure 6), reaching zero at 175°C case temperature.

Can the KSB1366G be used in switching applications above 100 kHz?

No-the KSB1366G has an f_T of 9 MHz but is characterized for low-frequency operation only. Its switching speed is limited by minority-carrier storage time, and datasheet typical characteristics (e.g., Figure 1–6) focus on DC and audio-band behavior. For >100 kHz switching, MOSFETs or RF-optimized BJTs with documented switching parameters should be selected instead of the KSB1366G.

KSB1366G Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3 Full Pack

Packaging:: Bulk

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 200mA, 2A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 150 @ 500mA, 5V

Power - Max:: 2 W

Frequency - Transition:: 9MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220F-3

KSB1366G FAQ

1.How can I place an order for KSB1366G through Aetrix?

Please submit a Request for Quotation (RFQ) for KSB1366G on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSB1366G reliable?

The price and inventory of KSB1366G are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSB1366G is usually 5 days.

3.What payment methods are accepted for KSB1366G?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSB1366G transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSB1366G?

KSB1366G orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSB1366G order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSB1366G?

For technical support, including KSB1366G datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSB1366G requirements.

6.How does Aetrix verify that KSB1366G is sourced from the original manufacturer or authorized distributors?

All KSB1366G products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSB1366G meets industry standards.

7.What is the process for return or replacement of KSB1366G?

All KSB1366G units undergo pre-shipment inspection (PSI). If there is an issue with KSB1366G, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSB1366G part is unused and in its original packaging.

Return procedure for KSB1366G:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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