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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSB772YSTSSTU

Name: KSB772YSTSSTU
Brand: onsemi
SKU: KSB772YSTSSTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSB772YSTSSTU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-225AA, TO-126-3

Datasheet:: KSB772YSTSSTU.pdf

Description:: TRANS PNP 30V 3A TO-126-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

KSB772YSTSSTU from onsemi (formerly Fairchild Semiconductor) is a PNP epitaxial silicon power transistor in TO-126 package, rated for -30 V V_CEO, -3 A I_C(DC), and 10 W P_C at T_C=25°C, with h_FE of 60–400 (depending on IC), used in audio frequency power amplification and low-speed switching circuits.

For engineers reviewing the KSB772YSTSSTU datasheet, pinout, applications, or equivalent options, key selection considerations include its PNP polarity, TO-126 thermal performance (R_θJC = 13.5°C/W), saturation voltages (V_CE(sat) ≤ -0.5 V @ -2 A/-0.2 A), and discontinuation status requiring legacy design support planning.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor optimized for linear audio amplification and DC/low-frequency switching. Its f_T of 80 MHz supports stable gain up to audio band edges, while Cob = 55 pF at V_CB = -10 V minimizes high-frequency coupling in amplifier stages.

The KSB772YSTSSTU features complementary pairing with the NPN KSD882, enabling push-pull output configurations. Its safe operating area (SOA) is defined up to 10 ms pulse width, with derating starting at T_C > 25°C per the published curve - critical for heatsink sizing in Class AB audio outputs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	-30 V: Maximum collector-emitter voltage before breakdown; sets rail limit for negative-supply audio stages.
I_C(DC)	-3 A: Continuous collector current capability; supports ≥5 W Class B output into 8 Ω with proper heatsinking.
P_C @ T_C=25°C	10 W: Power dissipation at case temperature 25°C; requires thermal interface and heatsink for sustained operation.
h_FE (I_C = -1 A)	60–400: DC current gain range across h_FE bins (Y/G); impacts base drive requirements in switching applications.
V_CE(sat)	-0.3 to -0.5 V @ -2 A/-0.2 A: Low saturation voltage reduces conduction loss in linear regulators or switch-mode drivers.
R_θJC	13.5 °C/W: Junction-to-case thermal resistance; enables calculation of maximum allowable case temperature for 150°C T_J.
f_T	80 MHz: Current-gain bandwidth product; ensures adequate gain margin at 20 kHz for audio preamp or driver stages.

Pinout & Package

Package: TO-126 (TSSTU variant: terminal length D = 3.45–4.05 mm, E = 6.45–7.45 mm). Molded plastic case with metal tab electrically connected to collector.

Pin/Terminal	Circuit Role	Design Meaning
1 (Emitter)	Emitting terminal for majority carriers (holes)	Connected to most positive node in PNP circuit; carries full load current in common-emitter configuration.
2 (Collector)	Current collection terminal	Internally bonded to metal tab; must be electrically isolated from heatsink unless referenced to system ground or supply rail.
3 (Base)	Control electrode for minority carrier injection	Requires current-limited drive (max I_B = -0.6 A DC); base resistor selection depends on h_FE bin and desired saturation level.

Key Features

Feature	Design Value
Complementary pair to KSD882	Enables matched push-pull output stages in audio amplifiers without cross-conduction risk due to consistent V_BE and h_FE tracking.
Low V_CE(sat)	Reduces power loss and heat generation in saturated-switching applications such as relay drivers or power supply enable circuits.
High h_FE range (60–400)	Allows flexible base drive design: low-current bias networks for linear use or robust gate-driving for discrete logic-level switches.
TO-126 thermal performance	R_θJC = 13.5°C/W supports compact heatsink solutions in space-constrained audio modules and industrial controls.

Applications

Audio Power Amplifier Output Stage	DC Motor Driver (Low-Speed)
Use Scenario: Final output stage in Class AB audio amplifier delivering 3–5 W into 4–8 Ω speaker loads using dual-rail ±15 V supply. IC Role / Device Role / Timing Role: PNP power transistor in complementary emitter-follower configuration, handling negative half-cycle current delivery. Use Value: Low V_CE(sat) and high h_FE minimize crossover distortion and improve efficiency over 70% at mid-power levels.	Use Scenario: H-bridge half-bridge leg driving 12 V brushed DC motor with stall current ≤2.5 A in industrial actuator control. IC Role / Device Role / Timing Role: High-side PNP switch controlling motor voltage rail; paired with NPN low-side switch. Use Value: Sustained -3 A I_C rating and SOA compliance up to 10 ms pulses accommodate motor startup surges without secondary breakdown.
Linear Voltage Regulator Pass Element	Discrete Logic-Level Switch Interface
Use Scenario: Series pass transistor in adjustable negative LDO (e.g., -5 V to -12 V) for analog sensor subsystems requiring low noise and no switching artifacts. IC Role / Device Role / Timing Role: PNP pass element controlled by error amplifier; dissipates variable power depending on input-output differential. Use Value: R_θJC = 13.5°C/W and 150°C T_J allow stable regulation under 2 W continuous dissipation with modest heatsinking.	Use Scenario: Level-shifting interface between 3.3 V microcontroller GPIO and 5–12 V external load (e.g., solenoid, LED array, fan). IC Role / Device Role / Timing Role: Saturated PNP switch turning on/off load referenced to positive supply rail. Use Value: Guaranteed V_CE(sat) ≤ -0.5 V ensures <100 mW conduction loss at 2 A, reducing self-heating in compact PCB layouts.

Audio Power Amplifier Output Stage

DC Motor Driver (Low-Speed)

Use Scenario: Final output stage in Class AB audio amplifier delivering 3–5 W into 4–8 Ω speaker loads using dual-rail ±15 V supply.

IC Role / Device Role / Timing Role: PNP power transistor in complementary emitter-follower configuration, handling negative half-cycle current delivery.

Use Value: Low V_CE(sat) and high h_FE minimize crossover distortion and improve efficiency over 70% at mid-power levels.

Use Scenario: H-bridge half-bridge leg driving 12 V brushed DC motor with stall current ≤2.5 A in industrial actuator control.

IC Role / Device Role / Timing Role: High-side PNP switch controlling motor voltage rail; paired with NPN low-side switch.

Use Value: Sustained -3 A I_C rating and SOA compliance up to 10 ms pulses accommodate motor startup surges without secondary breakdown.

Linear Voltage Regulator Pass Element

Discrete Logic-Level Switch Interface

Use Scenario: Series pass transistor in adjustable negative LDO (e.g., -5 V to -12 V) for analog sensor subsystems requiring low noise and no switching artifacts.

IC Role / Device Role / Timing Role: PNP pass element controlled by error amplifier; dissipates variable power depending on input-output differential.

Use Value: R_θJC = 13.5°C/W and 150°C T_J allow stable regulation under 2 W continuous dissipation with modest heatsinking.

Use Scenario: Level-shifting interface between 3.3 V microcontroller GPIO and 5–12 V external load (e.g., solenoid, LED array, fan).

IC Role / Device Role / Timing Role: Saturated PNP switch turning on/off load referenced to positive supply rail.

Use Value: Guaranteed V_CE(sat) ≤ -0.5 V ensures <100 mW conduction loss at 2 A, reducing self-heating in compact PCB layouts.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD772T4G	TO-252 (DPAK) package; same V_CEO/I_C ratings but higher R_θJA (60°C/W vs 132°C/W); h_FE min 40 @ -1 A.	Surface-mount assembly only; unsuitable for through-hole legacy boards; better suited for automated production than manual repair.	Select when board space is constrained and reflow capability exists; verify PCB thermal relief for 10 W dissipation.
BD772	TO-126 package; identical pinout; V_CEO = -40 V, I_C = -3 A, P_C = 10 W; h_FE 25–250 (lower max gain).	Direct physical replacement; slightly lower f_T (3 MHz vs 80 MHz) limits high-frequency linearity but sufficient for audio and switching below 100 kHz.	Preferred for new designs needing same footprint and proven reliability; widely stocked and not discontinued.

Compared with KSB772YSTSSTU, MJD772T4G offers SMT compatibility at the cost of thermal performance, while BD772 provides identical through-hole fit with broader availability and no discontinuation notice - making it the most practical drop-in alternative for legacy board refreshes.

Availability

KSB772YSTSSTU is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, and linear regulator pass elements requiring stable component supply despite its discontinued status.

Supply support for KSB772YSTSSTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly Fairchild Semiconductor) is a global semiconductor supplier focused on energy-efficient technologies for automotive, industrial, cloud, and IoT applications.

The KSB772YSTSSTU belongs to onsemi's legacy bipolar power transistor family designed specifically for audio frequency amplification and robust low-speed switching in industrial and consumer equipment.

FAQ

Is KSB772YSTSSTU still in active production?

No, KSB772YSTSSTU is discontinued and not recommended for new designs per onsemi's official documentation. However, Aetrix Electronics maintains limited legacy inventory and supports obsolescence management for existing production lines relying on this part. Customers should consult onsemi for long-term alternatives like BD772 or MJD772T4G before initiating new projects involving KSB772YSTSSTU.

What is the pinout configuration of KSB772YSTSSTU?

KSB772YSTSSTU uses TO-126 package with standard pinout: Pin 1 = Emitter, Pin 2 = Collector (connected to metal tab), Pin 3 = Base. This matches industry-standard TO-126 orientation when viewed from front (flat side facing user, leads down). The collector-tab connection requires electrical isolation from heatsinks unless intentionally tied to circuit potential.

How does the hFE classification affect KSB772YSTSSTU performance?

KSB772YSTSSTU is binned by h_FE into R/O/Y/G groups, where Y = 160–320 and G = 200–400 at I_C = -1 A. This affects base drive design: higher h_FE bins reduce required base current but may increase sensitivity to thermal runaway in linear applications. For switching, Y/G bins allow smaller base resistors and faster turn-on, while R/O bins offer more predictable gain stability across temperature.

Can KSB772YSTSSTU replace KSB772Y or KSB772O in existing circuits?

Yes, KSB772YSTSSTU is functionally identical to other KSB772 variants differing only in h_FE bin (Y) and package suffix (TSSTU denotes specific lead length tolerances). Electrical specifications, pinout, and thermal characteristics match fully. No circuit modification is needed when substituting KSB772YSTSSTU for KSB772Y or KSB772O in legacy assemblies.

What thermal derating applies to KSB772YSTSSTU above 25°C case temperature?

KSB772YSTSSTU's power dissipation must be linearly derated above T_C = 25°C at 80 mW/°C (10 W ÷ 125°C rise to 150°C T_J). This is derived from R_θJC = 13.5°C/W and maximum T_J = 150°C. At T_C = 75°C, maximum allowable P_C drops to 6 W. Always reference the published derating curve (Figure 8) for precise values across the full 25–200°C range.

KSB772YSTSSTU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-225AA, TO-126-3

Packaging:: Tube

Product Status:: Obsolete

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 30 V

Vce Saturation (Max) @ Ib, Ic:: 500mV @ 200mA, 2A

Current - Collector Cutoff (Max):: 1µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 160 @ 1A, 2V

Power - Max:: 1 W

Frequency - Transition:: 80MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-126-3

KSB772YSTSSTU FAQ

1.How can I place an order for KSB772YSTSSTU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSB772YSTSSTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSB772YSTSSTU reliable?

The price and inventory of KSB772YSTSSTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSB772YSTSSTU is usually 5 days.

3.What payment methods are accepted for KSB772YSTSSTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSB772YSTSSTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSB772YSTSSTU?

KSB772YSTSSTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSB772YSTSSTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSB772YSTSSTU?

For technical support, including KSB772YSTSSTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSB772YSTSSTU requirements.

6.How does Aetrix verify that KSB772YSTSSTU is sourced from the original manufacturer or authorized distributors?

All KSB772YSTSSTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSB772YSTSSTU meets industry standards.

7.What is the process for return or replacement of KSB772YSTSSTU?

All KSB772YSTSSTU units undergo pre-shipment inspection (PSI). If there is an issue with KSB772YSTSSTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSB772YSTSSTU part is unused and in its original packaging.

Return procedure for KSB772YSTSSTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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