Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSB772YSTU

Part No.:
KSB772YSTU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-225AA, TO-126-3
Datasheet:
AetrixKSB772YSTU.pdf
Description:
TRANS PNP 30V 3A TO-126-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSB772YSTU from onsemi (formerly Fairchild Semiconductor) is a PNP epitaxial silicon power transistor in TO-126 package, rated for -30 V VCEO, -3 A continuous collector current, and 10 W case-power dissipation at TC=25°C. It serves as an audio frequency power amplifier and low-speed switching device, commonly used in complementary push-pull output stages with its NPN counterpart KSD882.

For engineers reviewing the KSB772YSTU datasheet, pinout, applications, or equivalent options, key selection considerations include verified DC current gain (hFE = 160–400 at IC = -1 A), low VCE(sat) (-0.3 to -0.5 V at IC = -2 A / IB = -0.2 A), thermal resistance (RθJC = 13.5°C/W), and TO-126 mechanical compatibility in legacy linear amplifier designs.

Technical Context

This PNP bipolar junction transistor operates in linear amplification and saturated switching modes. Its hFE classification (Y-grade: 160–320 at IC = -1 A) and fT of 80 MHz support mid-bandwidth audio signal handling, while the -30 V VCEO rating enables use in ±15 V rail amplifier outputs.

The device features low saturation voltages (VCE(sat) ≤ -0.5 V, VBE(sat) ≤ -2.0 V) under high-current drive conditions and exhibits Cob = 55 pF at VCB = -10 V, limiting high-frequency switching suitability but supporting stable audio-stage operation.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO-30 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration
IC (DC)-3 A - Continuous collector current capability defining usable output power in Class-A/B amplifiers
hFE (IC = -1 A)160–320 - Confirmed DC current gain range for Y-grade, enabling predictable base drive sizing
VCE(sat)-0.3 to -0.5 V - Low saturation voltage ensures minimal conduction loss and heat generation at 2 A load
RθJC13.5°C/W - Junction-to-case thermal resistance supports heatsink-based thermal management up to 10 W
fT80 MHz - Current gain bandwidth product suitable for audio band (<20 kHz) with margin
Cob55 pF - Output capacitance at -10 V VCB, limiting RF performance but stabilizing audio-stage feedback

Pinout & Package

Package: TO-126 (standard through-hole power plastic package with integral heatsink tab; pin 2 is electrically connected to the collector and case).

Pin/TerminalCircuit RoleDesign Meaning
1EmitterCurrent exit terminal; connects to ground or negative rail in common-emitter amplifier configurations
2CollectorMain current input terminal; electrically tied to metal tab for direct heatsink mounting and thermal path
3BaseControl terminal; requires negative bias relative to emitter to turn on PNP device

Key Features

FeatureDesign Value
Complementary PairingDesigned as direct PNP complement to KSD882 NPN transistor for matched push-pull output stages
High hFE ConsistencyY-grade bin guarantees hFE ≥160 at IC = -1 A, reducing base drive variability across production units
Low Saturation LossVCE(sat) ≤ -0.5 V at IC = -2 A ensures <1 W conduction loss per device in Class-AB output stage
Thermally Robust PackageTO-126 case enables >10 W dissipation with external heatsink, validated by RθJC = 13.5°C/W

Applications

Audio Power AmplifierDC Motor Driver (Low-Speed)

Use Scenario: Complementary output stage in discrete hi-fi amplifier delivering 10–20 W into 4–8 Ω loads.

IC Role / Device Role / Timing Role: PNP power switch in Class-AB topology, sourcing current to load during negative half-cycle.

Use Value: Matched hFE and VCE(sat) with KSD882 minimizes crossover distortion and thermal imbalance.

Use Scenario: H-bridge half-bridge leg driving 12 V/2 A brushed DC motor in industrial actuator.

IC Role / Device Role / Timing Role: High-side PNP switch controlling motor voltage rail with base-driven on/off control.

Use Value: -3 A IC rating and -30 V VCEO accommodate back-EMF spikes and supply transients.

Linear Voltage Regulator Pass ElementDiscrete Power Supply Control

Use Scenario: Series pass transistor in adjustable linear regulator supplying ±15 V rails for op-amp circuits.

IC Role / Device Role / Timing Role: PNP series regulator element operating in active region to maintain constant output voltage.

Use Value: 10 W PC rating and low VCE(sat) enable stable regulation under 1 A load with minimal dropout.

Use Scenario: Enable/disable control of auxiliary 5 V/3 A power domain in legacy embedded system.

IC Role / Device Role / Timing Role: Low-speed switching transistor acting as power gate between source and downstream circuitry.

Use Value: Verified ICP = -7 A pulse rating supports inrush current handling during hot-plug events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
MJD772T4GTO-252 (DPAK) surface-mount package; identical VCEO/IC/hFE specs; RθJA = 62°C/W (vs. 132°C/W for KSB772YSTU)Requires PCB rework for SMT assembly; better suited for automated production than through-holeSelect when migrating to surface-mount design and thermal management permits lower RθJA
BD711TO-126 package; VCEO = -100 V, IC = -3 A, hFE = 25–250; higher voltage rating but wider hFE spreadSupports higher-voltage rails (e.g., ±48 V telecom); less consistent gain in linear amplifiersSelect when extended breakdown margin is required and gain matching is secondary

Compared with MJD772T4G and BD711, the KSB772YSTU offers tighter hFE binning (Y-grade) and proven thermal performance in TO-126 for audio amplifier output stages, though it is discontinued and not recommended for new designs.

Availability

KSB772YSTU is available at Aetrix Electronics and suitable for audio power amplifiers, linear voltage regulators, DC motor drivers, and discrete power supply control requiring stable component supply despite end-of-life status.

Supply support for KSB772YSTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly Fairchild Semiconductor) is a global semiconductor supplier specializing in energy-efficient power and sensing solutions for automotive, industrial, cloud, and consumer markets.

The KSB772YSTU belongs to onsemi's legacy discrete power transistor family, designed specifically for audio frequency linear amplification and low-speed switching in industrial and consumer analog systems.

FAQ

What is the pin configuration of the KSB772YSTU?

The KSB772YSTU uses a TO-126 package with three terminals: Pin 1 is Emitter, Pin 2 is Collector (electrically connected to the metal tab), and Pin 3 is Base. This configuration is standardized across all KSB772 variants and confirmed in the official onsemi datasheet Rev. 3 (July 2025). The collector-tab connection enables direct heatsinking, critical for thermal management in power amplifier applications using the KSB772YSTU.

Is the KSB772YSTU still in active production?

No, the KSB772YSTU is discontinued and explicitly marked "NOT RECOMMENDED FOR NEW DESIGN" in the official onsemi documentation. While limited legacy stock may be available through authorized distributors like Aetrix Electronics, no new manufacturing runs are planned. Customers designing new products should consult onsemi for approved replacements such as the MJD772T4G or consider redesigning with modern alternatives before committing to KSB772YSTU in long-term BOMs.

What does the 'Y' suffix in KSB772YSTU indicate?

The 'Y' in KSB772YSTU denotes the hFE gain bin: 160–320 at VCE = -2 V and IC = -1 A. This grading ensures tighter DC current gain consistency compared to R (60–120), O (100–200), or G (200–400) bins. The full part number KSB772YSTU therefore specifies a Y-grade device in TO-126 package with standard terminal lengths (TSSTU), making it suitable for applications where predictable base drive requirements are critical - such as matched complementary amplifier stages using the KSB772YSTU and KSD882.

Can the KSB772YSTU replace the KSB772 without changes?

Yes, KSB772YSTU is a direct variant of the base KSB772, sharing identical electrical specifications, TO-126 package, pinout, and thermal characteristics. The 'STU' suffix indicates standard terminal length per onsemi's MKT-TO126AArev2 drawing, and 'Y' confirms the hFE bin. No PCB or schematic modifications are needed when substituting KSB772YSTU for generic KSB772, provided the same gain grade is acceptable. All documented parameters for KSB772 apply fully to KSB772YSTU.

What is the maximum safe operating temperature for the KSB772YSTU?

The KSB772YSTU has a maximum junction temperature (TJ) of 150°C and storage temperature range of -55°C to +150°C. Safe continuous operation requires maintaining TJ ≤ 150°C via appropriate heatsinking - achievable with its RθJC = 13.5°C/W and 10 W PC rating at TC = 25°C. Derating begins above 25°C case temperature, reaching zero dissipation at ~175°C per the published derating curve. Thermal design for KSB772YSTU must account for ambient, airflow, and heatsink interface resistance to avoid exceeding this limit.

KSB772YSTU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-225AA, TO-126-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
PNP
Current - Collector (Ic) (Max):
3 A
Voltage - Collector Emitter Breakdown (Max):
30 V
Vce Saturation (Max) @ Ib, Ic:
500mV @ 200mA, 2A
Current - Collector Cutoff (Max):
1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
160 @ 1A, 2V
Power - Max:
1 W
Frequency - Transition:
80MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-126-3

KSB772YSTU FAQ

1.How can I place an order for KSB772YSTU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSB772YSTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSB772YSTU reliable?

The price and inventory of KSB772YSTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSB772YSTU is usually 5 days.

3.What payment methods are accepted for KSB772YSTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSB772YSTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSB772YSTU?

KSB772YSTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSB772YSTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSB772YSTU?

For technical support, including KSB772YSTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSB772YSTU requirements.

6.How does Aetrix verify that KSB772YSTU is sourced from the original manufacturer or authorized distributors?

All KSB772YSTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSB772YSTU meets industry standards.

7.What is the process for return or replacement of KSB772YSTU?

All KSB772YSTU units undergo pre-shipment inspection (PSI). If there is an issue with KSB772YSTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSB772YSTU part is unused and in its original packaging.

Return procedure for KSB772YSTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSB772YSTU Tags

  • KSB772YSTU
  • KSB772YSTU PDF
  • KSB772YSTU Datasheet
  • KSB772YSTU Specifications
  • KSB772YSTU Images
  • onsemi
  • onsemi KSB772YSTU
  • Buy KSB772YSTU
  • KSB772YSTU Price
  • KSB772YSTU Distributor
  • KSB772YSTU Supplier
  • KSB772YSTU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER