onsemi KSB810YTA

Overview

KSB810YTA from Fairchild Semiconductor is a PNP epitaxial silicon transistor designed for audio frequency amplification and general-purpose switching, with V_CEO = −25 V, I_C = −700 mA, P_C = 350 mW, h_FE = 120–240 (Y-class), and TO-92S package-used in low-voltage amplifier stages and complementary pair circuits with KSD1020.

For engineers reviewing the KSB810YTA datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain classification (Y), saturation voltage at high drive (V_CE(sat) ≤ −0.4 V @ I_C = −700 mA), junction temperature rating (150°C), and TO-92S mechanical compatibility in space-constrained analog designs.

Technical Context

This PNP bipolar junction transistor operates in linear amplification and saturated switching modes. Its h_FE range (120–240) and f_T of 50–160 MHz support mid-band audio signal handling and fast-switching control functions up to ~100 kHz. The −0.95 to −1.2 V V_BE(sat) ensures predictable base drive requirements under full load.

Designed as a complement to the NPN KSD1020, the KSB810YTA enables push-pull output stages and differential amplifier configurations. Its TO-92S package provides standardized lead spacing (2.31 mm pitch) and thermal resistance suitable for ambient-temperature PCB mounting without heatsinking in <150 mW dissipation applications.

Key Specifications

Pinout & Package

Package: TO-92S (3-lead plastic through-hole), 2.31 mm lead pitch, 4.00 mm body height, 3.72 mm body width, 2.86 mm body depth, 0.77 mm lead thickness.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP transistor applications.

Compared with MJD2955G and KSA992F, the KSB810YTA offers optimal balance of gain consistency, low saturation voltage, and TO-92S compatibility for space-limited audio and switching designs-whereas MJD2955G trades size for power, and KSA992F delivers nearly identical performance in same-package form.

Availability

KSB810YTA is available at Aetrix Electronics and suitable for audio frequency amplifiers, DC motor control circuits, and complementary transistor pair implementations requiring stable component supply and consistent Y-class h_FE performance.

Supply support for KSB810YTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Fairchild Semiconductor was a U.S.-based semiconductor company specializing in analog and discrete power products, acquired by ON Semiconductor in 2016.

The KSB810YTA belongs to Fairchild's legacy general-purpose bipolar transistor family, engineered for cost-sensitive, medium-frequency analog and switching applications in consumer, industrial, and automotive auxiliary systems.

FAQ

What is the h_FE range for KSB810YTA?

The KSB810YTA is Y-class binned with a guaranteed DC current gain (h_FE) range of 120 to 240 at V_CE = −1 V and I_C = −100 mA. This specification is confirmed in the Fairchild Rev. A1 datasheet and enables predictable biasing in amplifier and switching circuits without gain-margin overdesign.

What package type does KSB810YTA use?

KSB810YTA uses the TO-92S package-a 3-lead through-hole plastic package with 2.31 mm lead pitch, 4.00 mm height, and standardized pinout (1: Emitter, 2: Collector, 3: Base). Mechanical dimensions and lead configuration are fully documented in the Fairchild KSB810 datasheet Rev. A1.

Is KSB810YTA a direct replacement for KSB810O or KSB810G?

No-KSB810YTA is not a direct replacement for KSB810O (h_FE 70–140) or KSB810G (h_FE 200–400), as each suffix denotes a distinct h_FE bin. Substituting across bins may cause gain-dependent instability or bias shift; KSB810YTA must be used where Y-class gain is specified in the design.

What is the maximum pulsed collector current for KSB810YTA?

The maximum pulsed collector current (I_CP) for KSB810YTA is −1.0 A, specified under conditions of pulse width ≤ 10 ms and duty cycle ≤ 50%. This rating applies only to short-duration transient loads and does not extend continuous thermal limits defined by P_C = 350 mW.

Does KSB810YTA have automotive qualification?

KSB810YTA is not explicitly automotive-qualified (e.g., AEC-Q101). It is a commercial-grade general-purpose transistor intended for industrial, consumer, and prototyping applications. For automotive use, designers must perform full system-level qualification and derating per application requirements.