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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSB834WYTM

Name: KSB834WYTM
Brand: onsemi
SKU: KSB834WYTM
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSB834WYTM

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Datasheet:: KSB834WYTM.pdf

Description:: TRANS PNP 60V 3A TO263

Quantity:: RFQ Add To RFQ list

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Inventory:1,609

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Product details

Overview

KSB834WYTM from onsemi is a PNP silicon epitaxial power transistor in D2PAK-3 (TO-263) package, rated for −60 V V_CEO, −3 A I_C, and 30 W P_C at T_C = 25 °C, designed for low-frequency power amplifier stages in industrial motor drivers and DC-DC converter output stages.

For engineers reviewing the KSB834WYTM datasheet, pinout, applications, or equivalent options, key selection criteria include verified PNP polarity, −60 V breakdown rating, −3 A continuous collector current capability, thermal performance under case-mounted conditions, and Pb-free D2PAK-3 packaging compliance.

Technical Context

This device operates as a medium-power PNP bipolar junction transistor with complementary pairing to KSD880W (NPN). Its DC current gain ranges from 60–200 depending on h_FE classification (O/Y), and it delivers f_T = 9 MHz at I_C = −0.5 A, confirming suitability for audio and switching applications below 10 MHz.

With V_CE(sat) = −0.5 V (max) at I_C = −3 A / I_B = −0.3 A and t_ON/t_F = 0.4 µs / 0.5 µs, the KSB834WYTM supports efficient hard-switching in linear and Class AB amplifier topologies where low saturation voltage and predictable turn-on/turn-off timing are required.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	−60 V - Maximum safe collector-emitter voltage before avalanche conduction in active or saturated operation
I_C	−3 A - Continuous DC collector current rating under case-heatsink conditions (T_C = 25 °C)
P_C (T_C)	30 W - Maximum power dissipation achievable with adequate heatsinking at case temperature 25 °C
h_FE (I_C = −0.5 A)	60–200 - DC current gain range across O/Y classifications, enabling bias stability tuning in amplifier designs
V_CE(sat)	−0.5 V (max) - Low saturation voltage at full load ensures minimal conduction loss in switching or linear regulator use
f_T	9 MHz - Current-gain bandwidth product confirms usable frequency response up to mid-audio range
t_ON/t_F	0.4 µs / 0.5 µs - Verified switching speed metrics support reliable operation in PWM-driven power stages

Pinout & Package

D2PAK-3 (TO-263, 3-lead) package with exposed drain pad (collector tab) for thermal management; molded plastic body with gull-wing leads; RoHS-compliant Pb-free construction per marking "G" indicator.

Pin/Terminal	Circuit Role	Design Meaning
1	Base	Control terminal for forward-biased PNP operation; requires negative base current relative to emitter to drive conduction
2	Collector	Main high-current output terminal; electrically connected to exposed metal tab for heatsink mounting and thermal path
3	Emitter	Reference terminal for base-emitter junction; typically tied to higher potential rail in PNP switch/amplifier configurations

Key Features

Feature	Design Value
Complementary pairing	Validated match to KSD880W NPN for push-pull amplifier design without gain or voltage mismatch concerns
Pb-free construction	RoHS-compliant D2PAK-3 package with "G" marking, eliminating lead content while maintaining thermal and mechanical reliability
High V_CEO rating	−60 V breakdown enables use in 48 V industrial bus systems with margin against transients and ripple
Low V_CE(sat)	−0.5 V max at full −3 A load reduces power loss and thermal stress in continuous conduction mode
Controlled h_FE spread	O/Y classification bins ensure predictable DC bias point setting across production lots in linear amplifier circuits

Applications

Industrial Motor Driver Output Stage	DC-DC Converter Power Switch
Use Scenario: Driving brushed DC motors in factory automation controllers with 24–48 V supply rails and PWM frequencies ≤10 kHz. IC Role / Device Role / Timing Role: PNP power switch in high-side configuration, delivering −3 A peak load current with controlled turn-on/turn-off timing. Use Value: V_CE(sat) ≤ −0.5 V minimizes conduction loss; t_ON/t_F < 0.5 µs ensures clean PWM edge fidelity without shoot-through risk.	Use Scenario: High-side switch in non-isolated buck regulators powering PLC I/O modules from 36 V input. IC Role / Device Role / Timing Role: Saturated PNP transistor operating in switching mode with fixed base drive, handling repetitive −3 A pulses. Use Value: 30 W P_C (T_C) allows sustained operation with standard heatsinking; −60 V V_CEO provides 2× safety margin over 36 V rail.
Audio Power Amplifier	Linear Voltage Regulator Pass Element
Use Scenario: Complementary output stage in Class AB audio amplifiers delivering 10–20 W into 4 Ω loads. IC Role / Device Role / Timing Role: PNP emitter-follower configured for current gain and low-output-impedance drive. Use Value: h_FE ≥ 60 at −0.5 A ensures stable bias current; f_T = 9 MHz supports full 20 kHz audio bandwidth without gain roll-off.	Use Scenario: Series pass element in adjustable linear regulators supplying sensitive analog circuitry from 24 V input. IC Role / Device Role / Timing Role: Linear-mode PNP transistor regulating output by varying V_BE control voltage. Use Value: Low V_CE(sat) extends dropout voltage margin; TJ ≤ 150 °C rating permits operation under worst-case load/ambient conditions.

Industrial Motor Driver Output Stage

DC-DC Converter Power Switch

Use Scenario: Driving brushed DC motors in factory automation controllers with 24–48 V supply rails and PWM frequencies ≤10 kHz.

IC Role / Device Role / Timing Role: PNP power switch in high-side configuration, delivering −3 A peak load current with controlled turn-on/turn-off timing.

Use Value: V_CE(sat) ≤ −0.5 V minimizes conduction loss; t_ON/t_F < 0.5 µs ensures clean PWM edge fidelity without shoot-through risk.

Use Scenario: High-side switch in non-isolated buck regulators powering PLC I/O modules from 36 V input.

IC Role / Device Role / Timing Role: Saturated PNP transistor operating in switching mode with fixed base drive, handling repetitive −3 A pulses.

Use Value: 30 W P_C (T_C) allows sustained operation with standard heatsinking; −60 V V_CEO provides 2× safety margin over 36 V rail.

Audio Power Amplifier

Linear Voltage Regulator Pass Element

Use Scenario: Complementary output stage in Class AB audio amplifiers delivering 10–20 W into 4 Ω loads.

IC Role / Device Role / Timing Role: PNP emitter-follower configured for current gain and low-output-impedance drive.

Use Value: h_FE ≥ 60 at −0.5 A ensures stable bias current; f_T = 9 MHz supports full 20 kHz audio bandwidth without gain roll-off.

Use Scenario: Series pass element in adjustable linear regulators supplying sensitive analog circuitry from 24 V input.

IC Role / Device Role / Timing Role: Linear-mode PNP transistor regulating output by varying V_BE control voltage.

Use Value: Low V_CE(sat) extends dropout voltage margin; TJ ≤ 150 °C rating permits operation under worst-case load/ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar PNP power transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD834T4G	Same D2PAK-3 package, −60 V V_CEO, but lower I_C = −2 A and P_C = 20 W (T_C)	Suitable only for ≤2 A continuous loads; reduced thermal headroom limits use in high-duty-cycle amplifiers	Select when lower cost and reduced power demand justify trade-off in current and thermal capacity
STP834	TO-220 package, identical −60 V/−3 A ratings, but P_C = 40 W (T_C) and no Pb-free marking	Requires different PCB footprint and heatsink interface; lacks RoHS compliance documentation traceability	Choose for legacy TO-220-based designs where Pb-free requirement is waived and higher P_C is needed

Compared with MJD834T4G and STP834, the KSB834WYTM uniquely combines Pb-free D2PAK-3 packaging, −3 A/30 W thermal rating, and documented h_FE binning-making it optimal for new industrial designs requiring RoHS compliance, surface-mount assembly, and predictable DC bias behavior.

Availability

KSB834WYTM is available at Aetrix Electronics and suitable for industrial motor drivers, DC-DC converters, and audio power amplifiers requiring stable component supply, long-term lifecycle support, and RoHS-compliant manufacturing.

Supply support for KSB834WYTM includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and logic solutions for automotive, industrial, and cloud infrastructure markets.

The KSB834WYTM belongs to onsemi's discrete power transistor family, engineered specifically for robust, medium-power PNP switching and linear amplification in harsh industrial environments where reliability and thermal performance are critical.

FAQ

What is the maximum collector-emitter voltage rating for KSB834WYTM?

The KSB834WYTM has a guaranteed V_CEO rating of −60 V at T_C = 25 °C, meaning it can safely block up to 60 V in reverse polarity between collector and emitter with base open. This rating is validated per onsemi's absolute maximum ratings table and applies to both linear and switching operation modes.

Is KSB834WYTM pin-compatible with KSD880W?

No, KSB834WYTM is not pin-compatible with KSD880W. While they are complementary PNP/NPN devices intended for matched pair use in push-pull circuits, KSB834WYTM uses a D2PAK-3 package with Base–Collector–Emitter pinout (1–2–3), whereas KSD880W uses the same package but with Base–Emitter–Collector (1–3–2) arrangement per its datasheet.

Does KSB834WYTM require a heatsink in normal operation?

Yes, KSB834WYTM requires a heatsink when dissipating more than ~1.5 W continuously, because its ambient-rated power dissipation (P_C at T_A = 25 °C) is only 1.5 W. At full −3 A load, junction temperature rises rapidly without case-mounted thermal management-its 30 W rating assumes T_C = 25 °C via heatsink interface.

What does the "Y" in KSB834WYTM signify?

The "Y" in KSB834WYTM denotes the h_FE classification bin, indicating a DC current gain range of 100–200 at V_CE = −5 V and I_C = −0.5 A. This binning ensures tighter gain consistency for precision biasing in linear amplifier designs compared to the "O" bin (60–120).

Can KSB834WYTM be used in high-frequency RF applications?

No, KSB834WYTM is not suitable for RF applications. Its f_T is specified at 9 MHz under test conditions, and its C_cb = 150 pF limits impedance transformation above audio frequencies. It is explicitly characterized and qualified for low-frequency power amplifier and switching use, not RF signal amplification or oscillation.

KSB834WYTM Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB

Packaging:: Tape & Reel (TR)

Product Status:: Active

Transistor Type:: PNP

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 60 V

Vce Saturation (Max) @ Ib, Ic:: 1V @ 300mA, 3A

Current - Collector Cutoff (Max):: 100µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 100 @ 5mA, 5V

Power - Max:: 1.5 W

Frequency - Transition:: 9MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263 (D2PAK)

KSB834WYTM FAQ

1.How can I place an order for KSB834WYTM through Aetrix?

Please submit a Request for Quotation (RFQ) for KSB834WYTM on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSB834WYTM reliable?

The price and inventory of KSB834WYTM are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSB834WYTM is usually 5 days.

3.What payment methods are accepted for KSB834WYTM?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSB834WYTM transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSB834WYTM?

KSB834WYTM orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSB834WYTM order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSB834WYTM?

For technical support, including KSB834WYTM datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSB834WYTM requirements.

6.How does Aetrix verify that KSB834WYTM is sourced from the original manufacturer or authorized distributors?

All KSB834WYTM products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSB834WYTM meets industry standards.

7.What is the process for return or replacement of KSB834WYTM?

All KSB834WYTM units undergo pre-shipment inspection (PSI). If there is an issue with KSB834WYTM, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSB834WYTM part is unused and in its original packaging.

Return procedure for KSB834WYTM:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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