onsemi KSC1008GTA

Overview

KSC1008GTA from onsemi is an NPN epitaxial silicon transistor designed for low-frequency amplification and medium-speed switching in discrete analog signal paths. It delivers 700 mA collector current, 80 V collector-base breakdown voltage, and DC current gain (h_FE) of 200–400 at 50 mA, operating reliably up to 150°C junction temperature in consumer audio preamplifier stages.

For engineers reviewing the KSC1008GTA datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-92-3 LF package with side-collector pinout (Emitter-Base-Collector), 800 mW power dissipation, 30–50 MHz f_T, and h_FE classification G (200–400) for consistent bias stability in linear amplifier designs.

Technical Context

This device operates as a general-purpose bipolar junction transistor with fixed-emitter configuration and base-controlled conduction. Its 60 V V_CEO, 8 V V_EBO, and 0.2–0.4 V V_CE(sat) at 500 mA/50 mA support robust switching in relay drivers and low-voltage logic interfaces.

The 8 pF output capacitance (C_ob) at 10 V and 1 MHz, combined with 30–50 MHz f_T, defines its usable bandwidth for audio-frequency amplification and sub-MHz digital signal routing without high-frequency parasitic oscillation.

Key Specifications

Pinout & Package

Package: TO-92-3 LF (Case 135AR), Pb-free, through-hole mounting with 0.200" inline lead spacing (tape-and-ammo format). Pinout follows non-C suffix configuration: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Compared with 2N2222A and BC547C, KSC1008GTA offers superior voltage headroom and current handling in a surface-mount-compatible TO-92-3 LF package, making it optimal for cost-sensitive industrial controls where reliability at 700 mA and 80 V must be maintained without layout changes.

Availability

KSC1008GTA is available at Aetrix Electronics and suitable for audio preamplifiers, relay driver circuits, and LED current regulators requiring stable component supply across high-volume production runs.

Supply support for KSC1008GTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power management, analog, sensors, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The KSC1008GTA belongs to onsemi's legacy general-purpose bipolar transistor product line, engineered for cost-effective, high-reliability discrete amplification and switching in consumer and industrial electronics.

FAQ

What is the pin configuration of KSC1008GTA?

KSC1008GTA uses a side-collector TO-92-3 pinout: Pin 1 is Emitter, Pin 2 is Base, and Pin 3 is Collector. This matches the non-"C" suffix variant specified in the onsemi datasheet, distinguishing it from center-collector variants like KSC1008C. The marking "C1008 G−" on the package confirms this configuration and h_FE class G.

What does the "G" suffix in KSC1008GTA indicate?

"G" denotes the h_FE classification band: DC current gain between 200 and 400 at V_CE = 2 V and I_C = 50 mA. This tighter gain range improves consistency in amplifier biasing and reduces unit-to-unit variation in production assemblies using KSC1008GTA.

Can KSC1008GTA replace KSC1008YTA in a design?

Yes - both share identical electrical specifications and TO-92-3 LF packaging. The only difference is h_FE classification: YTA has h_FE 120–240, while KSC1008GTA has 200–400. If circuit performance depends on minimum h_FE ≥200, KSC1008GTA is preferred; otherwise, they are functionally interchangeable in most linear and switching roles.

What thermal derating applies to KSC1008GTA above 25°C ambient?

KSC1008GTA derates at 6.4 mW/°C above 25°C ambient, based on its R_θJA of 156°C/W. At 70°C ambient, maximum allowable power dissipation drops to 512 mW. This must be accounted for in sealed enclosures or high-density PCB layouts where airflow is restricted.

Is KSC1008GTA suitable for switching 24 V inductive loads?

Yes - with V_CEO = 60 V and V_CBO = 80 V, KSC1008GTA safely switches 24 V inductive loads such as relays or solenoids. Use a flyback diode across the load to clamp back-EMF, and ensure base drive provides ≥50 mA to guarantee saturation at full 700 mA collector current.