Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSC1008OBU

Part No.:
KSC1008OBU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA)
Datasheet:
AetrixKSC1008OBU.pdf
Description:
TRANS NPN 60V 0.7A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:3,330

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSC1008OBU from onsemi is an NPN epitaxial silicon transistor designed for low-frequency amplification and medium-speed switching, with VCBO = 80 V, IC = 700 mA, and hFE = 70–140 (Class O). It operates in TO-92-3 package with emitter-base-collector pinout and supports general-purpose analog and digital interface stages in consumer and industrial power control circuits.

For engineers reviewing the KSC1008OBU datasheet, pinout, applications, or equivalent options, key selection criteria include its 60 V VCEO rating, 0.2–0.4 V VCE(sat) at 500 mA/50 mA drive, 30–50 MHz fT bandwidth, and Pb-free TO-92-3 leadform compatibility with through-hole assembly and thermal derating of 6.4 mW/°C above 25°C.

Technical Context

This discrete NPN bipolar junction transistor uses epitaxial base construction to achieve stable DC current gain across collector currents from 1 mA to 500 mA, with verified saturation behavior under IC/IB = 10 drive conditions. Its breakdown voltage hierarchy-VCBO (80 V) > VCEO (60 V) > VEBO (8 V)-defines safe operating area boundaries for linear and switching use.

The device exhibits typical Cob = 8 pF at VCB = 10 V and f = 1 MHz, supporting predictable high-frequency roll-off in amplifier stages, while its RθJA = 156 °C/W (FR-4 PCB, 76 mm × 114 mm) enables thermal management in ambient-limited enclosures without heatsinking up to ~400 mW dissipation.

Key Specifications

ParameterValue and Actual Design Meaning
VCBO80 V - maximum reverse bias between collector and base before avalanche; defines safe off-state voltage margin in switch applications
VCEO60 V - maximum collector-emitter voltage with base open; sets upper limit for supply rail in common-emitter configurations
IC700 mA - continuous DC collector current rating; supports load switching up to ~0.42 W at VCE(sat) ≈ 0.3 V
hFE (Class O)70–140 - guaranteed DC current gain range at VCE = 2 V, IC = 50 mA; enables predictable base drive sizing
fT30–50 MHz - current-gain bandwidth product; suitable for audio preamps and sub-MHz digital signal routing
VCE(sat)0.2–0.4 V at IC = 500 mA, IB = 50 mA - low saturation voltage minimizes conduction loss in switching mode
PD800 mW - maximum power dissipation at 25°C ambient; derates linearly by 6.4 mW/°C above that temperature

Pinout & Package

Package: TO-92-3 (Case 135AN), Pb-free, straight-lead bulk packaging (KSC1008OBU suffix). Dimensions: 4.83 mm × 4.76 mm × 3.6 mm.

Pin/TerminalCircuit RoleDesign Meaning
1EmitterCurrent sink terminal; connects to ground or low-side return path in common-emitter or common-base topologies
2BaseControl input; requires ~50 mA drive for full saturation at 500 mA collector load per datasheet test condition
3CollectorCurrent source terminal; ties to positive supply or load in low-side switch configurations

Key Features

FeatureDesign Value
Low-frequency amplifier + medium-speed switchingValidated operation up to 50 MHz fT with stable hFE across 1–500 mA IC range supports dual-mode circuit reuse
High VCBO = 80 VEnables use in 48 V and 60 V bus systems with ≥20 V safety margin against transients
Class O hFE (70–140)Provides tighter gain distribution than Y/G variants, simplifying base resistor selection in production designs
Pb-free TO-92-3 packageComplies with RoHS Directive 2011/65/EU; compatible with standard wave-solder and hand-solder processes

Applications

Audio Signal AmplificationDC Motor Driver Stage

Use Scenario: Pre-amplifier stage in portable speaker systems with 3–12 V supply rails and 1–10 kHz signal bandwidth.

IC Role / Device Role / Timing Role: NPN small-signal amplifier configured in common-emitter topology with fixed bias or emitter degeneration.

Use Value: Delivers linear gain with hFE = 70–140 and low VCE(sat) ensures minimal distortion at output swing up to ±3 V peak.

Use Scenario: Low-side switch controlling 5–24 V brushed DC motors drawing ≤500 mA stall current in home appliance actuators.

IC Role / Device Role / Timing Role: Saturated-switch BJT driven by microcontroller GPIO with 50 mA base current.

Use Value: 0.2–0.4 V VCE(sat) limits power loss to ≤200 mW at full load, reducing thermal stress in compact enclosures.

Power Supply RegulationIndustrial Sensor Interface

Use Scenario: Pass transistor in linear voltage regulators delivering ≤500 mA at 5–12 V output from unregulated 9–24 V inputs.

IC Role / Device Role / Timing Role: Series pass element operating in active region with feedback-controlled base drive.

Use Value: 60 V VCEO and 800 mW PD support input-to-output differentials up to 15 V while maintaining SOA compliance.

Use Scenario: Level-shifting and signal conditioning for 4–20 mA current-loop sensors interfacing to 3.3 V/5 V ADC inputs.

IC Role / Device Role / Timing Role: Current buffer or emitter-follower configured for impedance transformation and noise rejection.

Use Value: 8 V VEBO and 0.86–1.10 V VBE(sat) ensure reliable turn-on with low-voltage microcontroller outputs and sensor-side isolation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC547BLower VCBO (50 V), lower IC (100 mA), hFE = 200–450 (Class B); TO-92 package with same pinout (E-B-C)Not suitable for >50 V or >100 mA loads; better for low-power signal amplification onlySelect BC547B only when supply voltage <30 V and load current <100 mA; verify SOA compliance in linear operation
KSC1845OTAHigher fT (150 MHz), same TO-92-3 package, hFE = 120–240 (Class Y), VCBO = 120 V, IC = 1 ASupports faster switching and higher voltage/current; overqualified for basic amplification but improves margin in harsh environmentsChoose KSC1845OTA where extended voltage headroom, higher speed, or improved reliability under surge conditions is required

Compared with BC547B and KSC1845OTA, the KSC1008OBU offers balanced performance for 48–60 V systems at moderate current, with tighter hFE tolerance than KSC1845OTA and higher voltage capability than BC547B-making it optimal for cost-sensitive industrial controls requiring robustness without overdesign.

Availability

KSC1008OBU is available at Aetrix Electronics and suitable for audio preamplifiers, DC motor drivers, linear regulator pass elements, and industrial 4–20 mA sensor interfaces requiring stable component supply and long-term manufacturability.

Supply support for KSC1008OBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.

The KSC1008OBU belongs to onsemi's legacy general-purpose bipolar transistor family, engineered for reliability in cost-sensitive, high-volume analog and switching functions across consumer and industrial equipment.

FAQ

What is the pin configuration of the KSC1008OBU?

The KSC1008OBU uses a TO-92-3 package with emitter-base-collector (E-B-C) pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This matches the non-"C" suffix variant specified in the onsemi datasheet, and differs from the center-collector KSC1008C (E-C-B). Always verify orientation using the marking "C1008 O−" on the package body.

What does the "O" in KSC1008OBU indicate?

"O" denotes the hFE classification band: KSC1008OBU has a guaranteed DC current gain of 70–140 at VCE = 2 V and IC = 50 mA. This is distinct from "Y" (120–240) and "G" (200–400) variants. The "BU" suffix confirms Pb-free, bulk-packed, straight-lead form per onsemi ordering conventions.

Can KSC1008OBU replace KSC1008YBU in a design?

Yes, KSC1008OBU can replace KSC1008YBU electrically if the circuit tolerates lower hFE (70–140 vs. 120–240), especially in saturated switching where gain variation has minimal impact. However, in linear amplifier stages relying on higher hFE for stability or gain accuracy, revalidation of biasing and AC response is recommended before substitution.

What is the maximum power dissipation of KSC1008OBU at 70°C ambient?

At 70°C ambient, KSC1008OBU's maximum power dissipation is 512 mW. This is calculated from its 800 mW rating at 25°C and 6.4 mW/°C derating: 800 − (6.4 × (70 − 25)) = 512 mW. Exceeding this risks junction temperature exceeding 150°C, triggering thermal runaway or accelerated degradation.

Is KSC1008OBU suitable for switching 24 V inductive loads?

Yes, KSC1008OBU is suitable for switching 24 V inductive loads such as relays or solenoids, provided external flyback protection (e.g., 1N4007 diode) is used and peak collector current remains ≤700 mA. Its 60 V VCEO provides adequate margin against inductive kickback, and 0.2–0.4 V VCE(sat) ensures low conduction loss during sustained on-time.

KSC1008OBU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA)
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
700 mA
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
70 @ 50mA, 2V
Power - Max:
800 mW
Frequency - Transition:
50MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

KSC1008OBU FAQ

1.How can I place an order for KSC1008OBU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSC1008OBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSC1008OBU reliable?

The price and inventory of KSC1008OBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC1008OBU is usually 5 days.

3.What payment methods are accepted for KSC1008OBU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC1008OBU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSC1008OBU?

KSC1008OBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSC1008OBU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSC1008OBU?

For technical support, including KSC1008OBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC1008OBU requirements.

6.How does Aetrix verify that KSC1008OBU is sourced from the original manufacturer or authorized distributors?

All KSC1008OBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC1008OBU meets industry standards.

7.What is the process for return or replacement of KSC1008OBU?

All KSC1008OBU units undergo pre-shipment inspection (PSI). If there is an issue with KSC1008OBU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSC1008OBU part is unused and in its original packaging.

Return procedure for KSC1008OBU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSC1008OBU Tags

  • KSC1008OBU
  • KSC1008OBU PDF
  • KSC1008OBU Datasheet
  • KSC1008OBU Specifications
  • KSC1008OBU Images
  • onsemi
  • onsemi KSC1008OBU
  • Buy KSC1008OBU
  • KSC1008OBU Price
  • KSC1008OBU Distributor
  • KSC1008OBU Supplier
  • KSC1008OBU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER