Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSC1008RBU

Part No.:
KSC1008RBU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-226-3, TO-92-3 (TO-226AA)
Datasheet:
AetrixKSC1008RBU.pdf
Description:
TRANS NPN 60V 0.7A TO-92-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,818

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSC1008RBU from onsemi is an NPN epitaxial silicon transistor designed for low-frequency amplification and medium-speed switching applications, featuring VCBO = 80 V, IC = 700 mA, and fT = 30–50 MHz. It operates with VCEO = 60 V, VBE(sat) = 0.86–1.10 V at IC = 500 mA/IB = 50 mA, and is commonly used in power supply control circuits and audio preamplifier stages.

For engineers reviewing the KSC1008RBU datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-92-3 package configuration, hFE classification (R indicates unspecified gain bin), collector-base breakdown voltage, saturation voltage behavior under high-current drive, and thermal resistance of 156°C/W.

Technical Context

This discrete NPN bipolar junction transistor uses epitaxial base construction to support stable DC current gain (hFE = 40–400) across operating currents from 1 mA to 500 mA. Its low VCE(sat) ≤ 0.4 V and VBE(sat) ≤ 1.10 V at IC = 500 mA enable efficient switching in linear-regulator pass elements and relay drivers.

The device's Cob = 8 pF at VCB = 10 V and f = 1 MHz, combined with fT ≥ 30 MHz, supports reliable performance in sub-50 MHz signal conditioning and feedback amplifier stages where bandwidth and output capacitance critically affect stability.

Key Specifications

ParameterValue and Actual Design Meaning
VCBO80 V - Withstands up to 80 V reverse bias between collector and base without breakdown, enabling use in 48 V supply rail interfaces.
VCEO60 V - Maximum safe collector-emitter voltage under open-base conditions, suitable for 24–48 V DC-DC converter switch nodes.
IC700 mA - Continuous collector current rating defines maximum load-handling capability in driver and amplifier stages.
fT30–50 MHz - Current-gain bandwidth product determines usable small-signal amplification range up to ~30 MHz.
RθJA156 °C/W - Junction-to-ambient thermal resistance measured on FR-4 PCB (76 × 114 mm); dictates heatsinking requirements at full power dissipation.
PD800 mW - Maximum power dissipation at 25°C ambient; derates by 6.4 mW/°C above that temperature.
Cob8 pF - Output capacitance at 10 V VCB and 1 MHz; impacts high-frequency gain roll-off and stability in amplifier feedback networks.

Pinout & Package

Package: TO-92-3 (Case 135AR), lead-formed, Pb-free, straight-lead bulk packaging (suffix "BU"). Dimensions: 4.83 mm × 4.76 mm body.

Pin/TerminalCircuit RoleDesign Meaning
1EmitterCurrent exit path; connected to ground or low-impedance return in common-emitter configurations.
2BaseControl terminal; requires ~50 mA drive current to saturate at IC = 500 mA per VBE(sat) spec.
3CollectorCurrent entry path; handles up to 700 mA continuous; electrically isolated from case in TO-92 package.

Key Features

FeatureDesign Value
Low-frequency amplifier + medium-speed switchingOptimized for audio-band amplification (≤20 kHz) and switching frequencies up to ~1 MHz with controlled turn-on/turn-off times.
High VCBO (80 V)Enables robust operation in industrial 48 V systems with transient margin, reducing need for external clamping.
Complement to KSA708Paired PNP counterpart allows balanced push-pull output stages in Class-B amplifiers and H-bridge drivers.
Pb-free constructionMeets RoHS Directive 2011/65/EU; compatible with lead-free reflow profiles and halogen-free board assembly.

Applications

Audio Preamp StageDC-DC Converter Pass Transistor

Use Scenario: Low-noise voltage amplification of line-level analog signals before ADC sampling in embedded audio recorders.

IC Role / Device Role / Timing Role: NPN common-emitter small-signal amplifier with hFE-controlled gain staging and minimal distortion at 1–10 kHz.

Use Value: Delivers stable 40–400 hFE across production lots and maintains VCE(sat) ≤ 0.4 V to preserve headroom in single-supply 5 V designs.

Use Scenario: Linear regulation element in low-noise post-regulator stage following a buck converter in medical sensor power rails.

IC Role / Device Role / Timing Role: Series pass transistor controlling output voltage via base bias; operates in active region with precise VBE tracking.

Use Value: Supports 700 mA load current with <0.4 V dropout at full load, minimizing heat generation versus higher-VCE(sat) alternatives.

Relay Driver CircuitIndustrial Sensor Interface

Use Scenario: Driving 12 V/500 mA electromagnetic relays in PLC I/O modules with microcontroller GPIO-level base control.

IC Role / Device Role / Timing Role: Medium-speed saturated switch turning relay coil on/off with <1 µs rise/fall time at rated current.

Use Value: Achieves full saturation with IB = 50 mA, ensuring reliable contact closure while limiting MCU drive burden.

Use Scenario: Level-shifting and buffering analog outputs from 3.3 V microcontrollers to 24 V industrial fieldbus receivers.

IC Role / Device Role / Timing Role: Emitter-follower buffer providing current gain and voltage translation without inversion.

Use Value: Maintains linearity over 0–20 mA output range with <1% gain error due to stable hFE and low Cob-induced loading.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN general-purpose transistor applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
BC547CLower VCBO (50 V), lower IC (100 mA), TO-92 package, hFE = 420–800 (C grade)Not suitable for >50 V or >100 mA loads; limited to low-power signal switchingSelect BC547C only for sub-12 V, <100 mA logic-level interfacing where gain consistency is critical.
MPSA18Higher VCBO (60 V), same TO-92, IC = 500 mA, fT = 300 MHz, Cob = 4 pFBetter HF response but lower breakdown margin; less tolerant of voltage transients in industrial environmentsChoose MPSA18 when >10 MHz bandwidth is required and supply rails remain ≤40 V with tight transient control.

Compared with BC547C and MPSA18, the KSC1008RBU provides superior voltage ruggedness (80 V VCBO) and higher current capacity (700 mA), making it preferred for 24–48 V industrial switching and linear regulation where reliability under electrical stress is prioritized over ultra-high speed.

Availability

KSC1008RBU is available at Aetrix Electronics and suitable for industrial sensor interfaces, relay driver circuits, and low-frequency audio amplification requiring stable component supply and long-term manufacturing continuity.

Supply support for KSC1008RBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, and cloud power applications.

The KSC1008RBU belongs to onsemi's general-purpose bipolar transistor product line, engineered for cost-sensitive, high-reliability linear and switching functions in industrial control, power management, and signal conditioning systems.

FAQ

What is the pin configuration of the KSC1008RBU?

The KSC1008RBU uses a TO-92-3 package with side-collector pinout: Pin 1 = Emitter, Pin 2 = Base, Pin 3 = Collector. This configuration is confirmed in the official onsemi datasheet (Publication Order Number KSC1008/D, Rev. 3, August 2023) and matches the standard KSC1008 (non-"C") marking diagram. The "R" suffix denotes unspecified hFE bin; it does not alter pin assignment.

Does the KSC1008RBU support Pb-free soldering processes?

Yes, the KSC1008RBU is a Pb-free device compliant with RoHS Directive 2011/65/EU. Its TO-92-3 LF (Lead-Free) package is qualified for standard lead-free reflow profiles (peak temperature ≤ 260°C). The datasheet explicitly states "These are Pb−Free Devices" and specifies "TO−92−3 LF CASE 135AR" for KSC1008RBU, confirming compatibility with modern SMT assembly.

What is the maximum power dissipation of the KSC1008RBU at 70°C ambient?

At 70°C ambient, the KSC1008RBU's maximum power dissipation is 512 mW. This is calculated using the datasheet's derating factor: PD = 800 mW − (6.4 mW/°C × (70 − 25)°C) = 800 − 288 = 512 mW. This value assumes the standard FR-4 PCB layout (76 mm × 114 mm) referenced in the Thermal Characteristics table.

Is the KSC1008RBU pin-compatible with the KSC1008C variant?

No, the KSC1008RBU and KSC1008C are not pin-compatible. KSC1008RBU uses side-collector configuration (1=E, 2=B, 3=C), while KSC1008C uses center-collector (1=E, 2=C, 3=B). Swapping them without PCB revision will cause circuit failure. The datasheet clearly distinguishes these arrangements in the Marking Diagram and Ordering Information sections.

What hFE range applies to the KSC1008RBU?

The "R" suffix in KSC1008RBU indicates an unspecified hFE classification - it is not binned to O (70–140), Y (120–240), or G (200–400) grades. Per the datasheet's hFE Classification table and Ordering Information note, "R" denotes unsorted gain, meaning individual units may fall anywhere within the full device specification of hFE = 40–400 at VCE = 2 V and IC = 50 mA.

KSC1008RBU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-226-3, TO-92-3 (TO-226AA)
Packaging:
Bulk
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
700 mA
Voltage - Collector Emitter Breakdown (Max):
60 V
Vce Saturation (Max) @ Ib, Ic:
400mV @ 50mA, 500mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
40 @ 50mA, 2V
Power - Max:
800 mW
Frequency - Transition:
50MHz
Operating Temperature:
150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-92-3

KSC1008RBU FAQ

1.How can I place an order for KSC1008RBU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSC1008RBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSC1008RBU reliable?

The price and inventory of KSC1008RBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC1008RBU is usually 5 days.

3.What payment methods are accepted for KSC1008RBU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC1008RBU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSC1008RBU?

KSC1008RBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSC1008RBU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSC1008RBU?

For technical support, including KSC1008RBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC1008RBU requirements.

6.How does Aetrix verify that KSC1008RBU is sourced from the original manufacturer or authorized distributors?

All KSC1008RBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC1008RBU meets industry standards.

7.What is the process for return or replacement of KSC1008RBU?

All KSC1008RBU units undergo pre-shipment inspection (PSI). If there is an issue with KSC1008RBU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSC1008RBU part is unused and in its original packaging.

Return procedure for KSC1008RBU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSC1008RBU Tags

  • KSC1008RBU
  • KSC1008RBU PDF
  • KSC1008RBU Datasheet
  • KSC1008RBU Specifications
  • KSC1008RBU Images
  • onsemi
  • onsemi KSC1008RBU
  • Buy KSC1008RBU
  • KSC1008RBU Price
  • KSC1008RBU Distributor
  • KSC1008RBU Supplier
  • KSC1008RBU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER