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onsemi KSC1009GBU
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- Part No.:
- KSC1009GBU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-226-3, TO-92-3 (TO-226AA)
- Datasheet:
-
KSC1009GBU.pdf
- Description:
- TRANS NPN 140V 0.7A TO-92-3
- Quantity:
- Payment:
- Shipping:
Inventory:2,883
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Product details
Overview
KSC1009GBU from ON Semiconductor is an NPN epitaxial silicon transistor designed for high-voltage amplifier and switching applications, featuring VCBO = 160 V, IC = 700 mA, PC = 800 mW, VCEO = 140 V, and fT = 30–50 MHz. It operates in TO-92 package with side-collector pinout (Emitter–Base–Collector) and is commonly used in CRT horizontal deflection, relay drivers, and low-frequency power amplifiers.
For engineers reviewing the KSC1009GBU datasheet, pinout, applications, or equivalent options, key selection criteria include breakdown voltage margin, DC current gain classification (R/O/Y/G), saturation voltage at IC = 200 mA/IB = 20 mA, thermal resistance (RθJA = 150 °C/W), and output capacitance (Cob = 8 pF at VCB = 10 V).
Technical Context
The KSC1009GBU is a general-purpose NPN bipolar junction transistor optimized for linear amplification and medium-speed switching up to ~50 MHz. Its high VCBO and VCEO ratings support operation in flyback and line-output circuits where transient voltage spikes exceed 100 V.
It exhibits hFE ranging 40–400 depending on classification grade (R/O/Y/G), with guaranteed minimum hFE ≥ 40 at VCE = 2 V and IC = 50 mA. Saturation behavior is characterized by VCE(sat) ≤ 0.7 V and VBE(sat) ≤ 1.00 V under IC = 200 mA / IB = 20 mA conditions.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | 160 V - Withstands collector-base reverse bias up to 160 V without avalanche breakdown, enabling use in high-voltage switch-mode stages. |
| VCEO | 140 V - Maximum collector-emitter voltage before breakdown with base open; defines safe operating area in common-emitter configurations. |
| IC | 700 mA - Continuous collector current rating; supports drive of relays, small solenoids, and medium-power audio stages. |
| PC | 800 mW - Maximum power dissipation at TA = 25°C; requires thermal derating above 25°C ambient per RθJA = 150 °C/W. |
| fT | 30–50 MHz - Current-gain bandwidth product; suitable for low-to-medium frequency amplification and switching below 10 MHz fundamental. |
| Cob | 8 pF at VCB = 10 V - Output capacitance limits high-frequency gain and switching speed; impacts stability in RF-coupled designs. |
| hFE (Min) | 40 at VCE = 2 V, IC = 50 mA - Minimum DC current gain ensures predictable base drive requirements in linear and saturated operation. |
Pinout & Package
Package: TO-92, 3-lead molded plastic case with straight or bent leads; standard side-collector configuration (Pin 1: Emitter, Pin 2: Base, Pin 3: Collector).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 | Emitter | Current exit terminal; referenced to ground or negative rail in common-emitter topology; sets bias point via emitter resistor. |
| 2 | Base | Control input; requires current-limited drive (e.g., via RB) to achieve target IC; sensitive to ESD due to thin oxide layer. |
| 3 | Collector | High-voltage current sink; connects to load or supply rail; must be isolated from PCB copper pour exceeding 150 °C/W thermal path. |
Key Features
| Feature | Design Value |
|---|---|
| High VCBO rating | 160 V enables robust operation in flyback transformer primary-side switching and CRT deflection circuits with high back-EMF. |
| Complementary pairing | Designed as NPN counterpart to KSA709 PNP transistor, supporting push-pull amplifier and driver stage implementation. |
| Multiple hFE grades | R/O/Y/G classifications provide consistent gain bins (40–80 to 200–400) for production matching in analog signal chains. |
| Low VCE(sat) | ≤0.7 V at IC = 200 mA/IB = 20 mA reduces conduction loss in saturated-switching applications like LED or relay control. |
Applications
| TV Horizontal Deflection | Relay Driver Circuit |
|---|---|
Use Scenario: Amplifies sawtooth waveform to drive flyback transformer primary in CRT-based television receivers. IC Role / Device Role / Timing Role: High-voltage NPN switch operating in Class-B or Class-C mode with repetitive 15.734 kHz pulses. Use Value: VCBO = 160 V withstands flyback voltage spikes; Cob = 8 pF minimizes timing distortion in resonant tank interaction. |
Use Scenario: Interfaces microcontroller GPIO to energize 12 V/500 mA electromagnetic relay coils. IC Role / Device Role / Timing Role: Saturated switch providing low-loss current path between VCC and relay coil return. Use Value: IC = 700 mA exceeds relay hold current; VCE(sat) ≤ 0.7 V limits power dissipation to < 350 mW at full load. |
| Audio Preamp Stage | DC Motor Speed Control |
Use Scenario: Low-noise voltage amplifier in first-stage audio signal conditioning before op-amp buffering. IC Role / Device Role / Timing Role: Common-emitter linear amplifier biased at IC ≈ 1–5 mA with emitter degeneration. Use Value: hFE ≥ 40 ensures stable gain setting; fT ≥ 30 MHz preserves audio band fidelity up to 20 kHz. |
Use Scenario: PWM-controlled switch regulating average current to 6–24 V brushed DC motors in industrial actuators. IC Role / Device Role / Timing Role: Medium-speed switching element toggling at 1–5 kHz with duty-cycle modulation. Use Value: fT = 30–50 MHz supports clean edge transitions; PC = 800 mW allows heatsink-free operation at ≤ 30% duty cycle. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar NPN transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MPSA42 | Higher VCBO = 300 V, lower IC = 500 mA, same TO-92 package; hFE min = 40 at IC = 10 mA. | Better suited for ultra-high-voltage AC-line sensing or snubber circuits; less ideal for 700 mA load switching. | Select MPSA42 when VCBO > 160 V is mandatory and load current ≤ 500 mA. |
| BC547C | Lower VCBO = 50 V, higher hFE = 420 (typ), IC = 100 mA, same pinout; not rated for high-voltage transients. | Optimized for low-voltage logic-level amplification and signal switching; unsuitable for flyback or deflection use. | Choose BC547C only in sub-50 V DC systems requiring high gain and low noise, not high-voltage resilience. |
Compared with MPSA42 and BC547C, the KSC1009GBU uniquely balances 160 V breakdown capability with 700 mA current handling in TO-92-making it a targeted solution for medium-power, medium-voltage switching where both voltage headroom and current drive matter.
Availability
KSC1009GBU is available at Aetrix Electronics and suitable for CRT deflection circuits, relay interface modules, audio preamplifier stages, and DC motor control requiring stable component supply across industrial and consumer electronics programs.
Supply support for KSC1009GBU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power and signal management solutions, with legacy roots in Fairchild Semiconductor's discrete portfolio.
The KSC1009GBU belongs to ON Semiconductor's general-purpose bipolar transistor product line, engineered for cost-sensitive, medium-voltage amplifier and switching applications in consumer, industrial, and legacy display systems.
FAQ
What is the pin configuration of the KSC1009GBU?
The KSC1009GBU uses a TO-92 package with side-collector pinout: Pin 1 is Emitter, Pin 2 is Base, and Pin 3 is Collector. This configuration differs from center-collector variants (e.g., KSC1009C) and must be verified during PCB layout to avoid functional failure. The KSC1009GBU datasheet confirms this arrangement under "Ordering Information" and "Physical Dimensions."
Does the KSC1009GBU have a specified hFE range, and how is it binned?
Yes, the KSC1009GBU is binned into four hFE classifications: R (40–80), O (70–140), Y (120–240), and G (200–400), measured at VCE = 2 V and IC = 50 mA. The suffix "GBU" corresponds to the Y-grade bin, meaning the KSC1009GBU delivers hFE between 120 and 240. This binning ensures predictable base drive design across production lots.
Can the KSC1009GBU replace the KSC1009YTA in a design?
Yes-the KSC1009GBU and KSC1009YTA share identical electrical specifications, TO-92 packaging, and side-collector pinout. Both are rated for VCBO = 160 V, IC = 700 mA, and PC = 800 mW. The difference lies only in packaging method (GBU = bulk, YTA = ammo tape) and hFE grade (YTA = Y-grade, same as GBU). The KSC1009GBU is a direct functional and mechanical replacement.
What is the maximum safe operating temperature for the KSC1009GBU?
The KSC1009GBU has a maximum junction temperature (TJ) of 150 °C and storage temperature range of –55 °C to +150 °C. To maintain reliability, continuous operation should keep TJ ≤ 150 °C, which requires thermal derating above 25 °C ambient using RθJA = 150 °C/W. For example, at TA = 75 °C, maximum allowable power dissipation drops to 500 mW.
Is the KSC1009GBU suitable for automotive applications?
No-the KSC1009GBU is not qualified for automotive use. Per Fairchild/ON Semiconductor documentation, it is designated as a commercial-grade device with no AEC-Q101 qualification, no guaranteed operation over –40 °C to +125 °C, and explicit exclusion from safety-critical or transportation applications. Use only in industrial, consumer, or legacy equipment where automotive reliability standards do not apply.
KSC1009GBU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-226-3, TO-92-3 (TO-226AA)
- Packaging:
- Bulk
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 700 mA
- Voltage - Collector Emitter Breakdown (Max):
- 140 V
- Vce Saturation (Max) @ Ib, Ic:
- 700mV @ 20mA, 200mA
- Current - Collector Cutoff (Max):
- 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 200 @ 50mA, 2V
- Power - Max:
- 800 mW
- Frequency - Transition:
- 50MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-92-3
KSC1009GBU FAQ
1.How can I place an order for KSC1009GBU through Aetrix?
Please submit a Request for Quotation (RFQ) for KSC1009GBU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSC1009GBU reliable?
The price and inventory of KSC1009GBU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC1009GBU is usually 5 days.
3.What payment methods are accepted for KSC1009GBU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC1009GBU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSC1009GBU?
KSC1009GBU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSC1009GBU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSC1009GBU?
For technical support, including KSC1009GBU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC1009GBU requirements.
6.How does Aetrix verify that KSC1009GBU is sourced from the original manufacturer or authorized distributors?
All KSC1009GBU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC1009GBU meets industry standards.
7.What is the process for return or replacement of KSC1009GBU?
All KSC1009GBU units undergo pre-shipment inspection (PSI). If there is an issue with KSC1009GBU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSC1009GBU part is unused and in its original packaging.
Return procedure for KSC1009GBU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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