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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSC1623GMTF

Name: KSC1623GMTF
Brand: onsemi
SKU: KSC1623GMTF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSC1623GMTF

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: KSC1623GMTF.pdf

Description:: TRANS NPN 50V 0.1A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

KSC1623GMTF from ON Semiconductor (formerly Fairchild) is an NPN epitaxial silicon transistor in SOT-23 package, rated for 50 V V_CEO, 100 mA I_C, and 250 MHz f_T, used in low-frequency amplification and high-frequency oscillator circuits in portable audio and RF signal generation.

For engineers reviewing the KSC1623GMTF datasheet, pinout, applications, or equivalent options, this page provides verified electrical parameters, thermal behavior, h_FE classification (G-grade: 200–400), saturation voltage performance at 100 mA, and real-world use context for discrete BJT selection in space-constrained analog designs.

Technical Context

The KSC1623GMTF operates as a general-purpose bipolar junction transistor with fixed-emitter biasing capability and DC current gain spanning 200–400 under 6 V V_CE and 1 mA I_C. Its 250 MHz f_T supports stable oscillation up to VHF band when paired with appropriate LC tank networks.

Thermal design is constrained by 200 mW P_D at 25°C and 1.6 mW/°C derating, yielding 625°C/W R_θJA on standard FR-4 PCBs. Output capacitance remains low at 3 pF (VCB = 6 V, f = 1 MHz), enabling minimal phase shift in tuned amplifier stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum safe collector-emitter voltage before breakdown in common-emitter configuration.
I_C	100 mA - Continuous collector current rating defining linear amplification headroom and switching load capacity.
f_T	250 MHz - Unity-gain bandwidth confirming suitability for VHF oscillator and RF amplifier applications.
h_FE (G-grade)	200–400 - Verified DC current gain range at V_CE = 6 V, I_C = 1 mA, enabling predictable bias point stability.
V_CE(sat)	0.15–0.30 V - Low saturation voltage at I_C = 100 mA, I_B = 10 mA, minimizing conduction loss in switching mode.
C_ob	3 pF - Small output capacitance reducing frequency-dependent feedback and aiding high-Q resonant circuit integration.

Pinout & Package

SOT-23 3-lead plastic package (JEDEC TO-236AB), low-profile surface-mount format with 1.30 mm × 2.92 mm footprint and 1.20 mm max height; optimized for automated placement and reflow soldering on dense PCBs.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives base current to modulate collector current; requires external bias network for stable Q-point establishment.
2 (Emitter)	Current return path	Common reference terminal for emitter-grounded amplifier configurations; tied directly to PCB ground plane in most layouts.
3 (Collector)	Output current node	Delivers amplified or switched current to load; connected to V_CC via collector resistor or RF choke in oscillator topologies.

Key Features

Feature	Design Value
Low-frequency amplifier capability	Validated h_FE ≥ 200 at 1 mA enables stable small-signal gain in audio preamp and sensor interface stages.
High-frequency oscillator support	250 MHz f_T and 3 pF C_ob allow reliable Colpitts or Hartley oscillator operation up to 100 MHz with minimal tuning drift.
G-grade h_FE binning	200–400 h_FE range ensures consistent biasing across production lots without individual calibration.
Low V_CE(sat)	0.30 V max at 100 mA allows efficient switching in battery-powered LED drivers and logic-level translators.

Applications

Portable Audio Amplifier	RF Local Oscillator
Use Scenario: Single-transistor preamplifier stage in compact headphone amplifiers or microphone bias circuits. IC Role / Device Role / Timing Role: NPN BJT configured in common-emitter topology for voltage gain and impedance matching. Use Value: G-grade h_FE consistency ensures uniform gain across units; low V_BE(on) (0.55–0.65 V) enables reliable turn-on from 3.3 V rails.	Use Scenario: Active device in Colpitts oscillator generating 30–80 MHz local oscillator signals for AM/FM receivers. IC Role / Device Role / Timing Role: Transconductance element sustaining oscillation in parallel-resonant LC tank with capacitive feedback. Use Value: 250 MHz f_T and 3 pF C_ob minimize phase noise and support stable frequency locking without external compensation.
LED Flash Driver	Signal Level Shifter
Use Scenario: Current-switching element driving white LEDs in smartphone camera flash modules. IC Role / Device Role / Timing Role: Saturated switch controlling LED current path between battery and LED anode. Use Value: 0.30 V max V_CE(sat) reduces power loss and thermal rise during 100 mA pulse operation, extending battery life.	Use Scenario: Bidirectional level translation between 1.8 V microcontroller GPIO and 5 V peripheral logic inputs. IC Role / Device Role / Timing Role: Emitter-follower configured BJT providing voltage buffering with minimal propagation delay. Use Value: Low V_BE(sat) (0.86–1.00 V) ensures full logic-high transfer from 1.8 V source while maintaining noise margin on 5 V side.

Portable Audio Amplifier

RF Local Oscillator

Use Scenario: Single-transistor preamplifier stage in compact headphone amplifiers or microphone bias circuits.

IC Role / Device Role / Timing Role: NPN BJT configured in common-emitter topology for voltage gain and impedance matching.

Use Value: G-grade h_FE consistency ensures uniform gain across units; low V_BE(on) (0.55–0.65 V) enables reliable turn-on from 3.3 V rails.

Use Scenario: Active device in Colpitts oscillator generating 30–80 MHz local oscillator signals for AM/FM receivers.

IC Role / Device Role / Timing Role: Transconductance element sustaining oscillation in parallel-resonant LC tank with capacitive feedback.

Use Value: 250 MHz f_T and 3 pF C_ob minimize phase noise and support stable frequency locking without external compensation.

LED Flash Driver

Signal Level Shifter

Use Scenario: Current-switching element driving white LEDs in smartphone camera flash modules.

IC Role / Device Role / Timing Role: Saturated switch controlling LED current path between battery and LED anode.

Use Value: 0.30 V max V_CE(sat) reduces power loss and thermal rise during 100 mA pulse operation, extending battery life.

Use Scenario: Bidirectional level translation between 1.8 V microcontroller GPIO and 5 V peripheral logic inputs.

IC Role / Device Role / Timing Role: Emitter-follower configured BJT providing voltage buffering with minimal propagation delay.

Use Value: Low V_BE(sat) (0.86–1.00 V) ensures full logic-high transfer from 1.8 V source while maintaining noise margin on 5 V side.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MMBT3904LT1G	Lower f_T (300 MHz vs. 250 MHz), same SOT-23 package, h_FE range 100–300 (standard grade)	Less suitable for >50 MHz oscillator use due to tighter h_FE distribution and higher C_ob (4 pF)	Select when cost sensitivity outweighs VHF performance needs and G-grade h_FE consistency is not required.
BC847BW	Higher V_CEO (65 V), same h_FE binning (200–450), slightly higher V_CE(sat) (0.35 V max)	Better suited for industrial 24 V control interfaces but less optimal for low-voltage portable RF circuits	Prefer for 5–24 V systems requiring wider voltage margin; avoid where 50 V rating and 250 MHz f_T are tightly specified.

Compared with MMBT3904LT1G and BC847BW, the KSC1623GMTF offers a balanced trade-off of VHF capability, tight G-grade h_FE, and low saturation voltage-making it optimal for portable RF and battery-efficient switching where both gain consistency and frequency response matter.

Availability

KSC1623GMTF is available at Aetrix Electronics and suitable for portable audio amplifiers, RF local oscillators, LED flash drivers, and signal level shifters requiring stable component supply and consistent h_FE binning.

Supply support for KSC1623GMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power and signal management solutions, with roots in Fairchild Semiconductor's discrete transistor legacy.

The KSC1623GMTF belongs to ON Semiconductor's legacy general-purpose BJT product line, designed specifically for cost-sensitive, space-constrained analog signal conditioning and RF generation in consumer and industrial electronics.

FAQ

What is the h_FE range for KSC1623GMTF?

The KSC1623GMTF is G-grade binned with a guaranteed DC current gain (h_FE) range of 200 to 400 at V_CE = 6 V and I_C = 1 mA. This specification is confirmed in the official Fairchild KSC1623 Rev. 1.1.0 datasheet and applies directly to the KSC1623GMTF marking variant. The h_FE value is measured under standardized conditions and remains stable across temperature within its operating range.

Is KSC1623GMTF pin-compatible with KSC1623YMTF or KSC1623LMTF?

Yes, KSC1623GMTF shares identical SOT-23 package dimensions, pinout (Base–Emitter–Collector), and thermal land pattern with KSC1623YMTF and KSC1623LMTF. All three variants differ only in h_FE grading (G = 200–400, Y = 90–180, L = 300–600) and top-side marking (C1G, C1Y, C1L), making them mechanically and electrically interchangeable in layout.

What is the maximum power dissipation for KSC1623GMTF at 75°C ambient?

At 75°C ambient, KSC1623GMTF has a derated power dissipation of 120 mW. Starting from 200 mW at 25°C and applying the 1.6 mW/°C derating factor over the 50°C rise yields 200 − (50 × 1.6) = 120 mW. This value assumes standard FR-4 PCB mounting per JEDEC guidelines and must be validated against actual board thermal design.

Does KSC1623GMTF support high-frequency oscillator applications above 100 MHz?

KSC1623GMTF has a specified f_T of 250 MHz, and typical performance data shows usable gain up to ~100 MHz in Colpitts oscillator configurations. While it can function beyond that, sustained oscillation above 100 MHz requires careful layout, minimal parasitic inductance, and precise LC tuning-verified in application notes for the KSC1623 family. The KSC1623GMTF itself is documented for "High Frequency OSC" use in its official features list.

What is the meaning of the 'C1G' marking on KSC1623GMTF?

The 'C1G' marking on KSC1623GMTF indicates the device's part variant and h_FE grade: 'C1' is the Fairchild die code for the KSC1623 transistor, and 'G' denotes the G-grade h_FE bin (200–400). This marking appears on the top surface of the SOT-23 package and matches the ordering suffix 'GMTF', confirming the KSC1623GMTF identity and performance tier.

KSC1623GMTF Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 200 @ 1mA, 6V

Power - Max:: 200 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

KSC1623GMTF FAQ

1.How can I place an order for KSC1623GMTF through Aetrix?

Please submit a Request for Quotation (RFQ) for KSC1623GMTF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSC1623GMTF reliable?

The price and inventory of KSC1623GMTF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC1623GMTF is usually 5 days.

3.What payment methods are accepted for KSC1623GMTF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC1623GMTF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSC1623GMTF?

KSC1623GMTF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSC1623GMTF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSC1623GMTF?

For technical support, including KSC1623GMTF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC1623GMTF requirements.

6.How does Aetrix verify that KSC1623GMTF is sourced from the original manufacturer or authorized distributors?

All KSC1623GMTF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC1623GMTF meets industry standards.

7.What is the process for return or replacement of KSC1623GMTF?

All KSC1623GMTF units undergo pre-shipment inspection (PSI). If there is an issue with KSC1623GMTF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSC1623GMTF part is unused and in its original packaging.

Return procedure for KSC1623GMTF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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