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Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSC1623OMTF

Name: KSC1623OMTF
Brand: onsemi
SKU: KSC1623OMTF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: KSC1623OMTF

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-236-3, SC-59, SOT-23-3

Datasheet:: KSC1623OMTF.pdf

Description:: TRANS NPN 50V 0.1A SOT-23-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

KSC1623OMTF from ON Semiconductor is an NPN epitaxial silicon transistor designed for low-frequency amplifier and high-frequency oscillator applications, with V_CEO = 50 V, I_C = 100 mA, f_T = 250 MHz, and h_FE = 90–180 (O-class), housed in a SOT-23 package for compact signal-stage amplification in consumer audio and RF front-end circuits.

For engineers reviewing the KSC1623OMTF datasheet, pinout, applications, or equivalent options, key selection criteria include DC current gain classification, saturation voltage at 100 mA drive, thermal resistance (625 °C/W), and SOT-23 terminal mapping for PCB layout and bias network design.

Technical Context

This discrete NPN transistor operates as a general-purpose amplifying device with verified f_T of 250 MHz under V_CE = 6 V and I_C = 10 mA, supporting stable small-signal gain up to VHF band. Its O-class h_FE range (90–180) ensures predictable bias point stability in fixed-bias or emitter-degenerated configurations.

Thermal performance is defined by R_θJA = 625 °C/W on standard FR-4 PCB (76 mm × 114 mm), and absolute maximum ratings include V_CBO = 60 V and T_J = 150 °C - confirming suitability for non-power, signal-level switching and amplification where junction temperature rise must remain within safe margins.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	50 V - Maximum collector-emitter voltage before breakdown; sets upper limit for supply rail in common-emitter amplifier stages.
I_C	100 mA - Continuous collector current rating; defines usable dynamic range for small-signal amplification without thermal runaway.
f_T	250 MHz - Current gain bandwidth product; confirms usability in VHF oscillators and RF preamplifiers up to ~100 MHz fundamental.
h_FE (O-class)	90–180 - DC current gain range at V_CE = 6 V, I_C = 1 mA; enables predictable base resistor calculation for stable Q-point setting.
V_CE(sat)	0.15–0.30 V @ I_C = 100 mA, I_B = 10 mA - Low saturation voltage supports efficient switching in digital interface or driver stages.
R_θJA	625 °C/W - Junction-to-ambient thermal resistance; requires minimum PCB copper area to maintain T_J < 150 °C at full I_C.

Pinout & Package

Package: SOT-23 (JEDEC TO-236AB), surface-mount, 3-lead plastic package with standard land pattern per MA03DREV10.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input	Receives forward-biased current to modulate collector current; requires series resistor to limit I_B and ensure h_FE-based gain control.
2 (Emitter)	Current return path	Common reference node for bias network; often tied to ground or emitter degeneration resistor in amplifier configurations.
3 (Collector)	Output current source	Delivers amplified current to load; polarity and voltage swing constrained by V_CEO and power dissipation limits.

Key Features

Feature	Design Value
O-class h_FE binning	Guaranteed 90–180 gain range enables consistent bias design across production lots without individual trimming.
250 MHz f_T	Supports stable small-signal amplification and oscillator operation up to VHF frequencies with minimal phase shift.
SOT-23 footprint	Enables high-density placement in space-constrained consumer electronics, including portable radios and sensor signal chains.
V_CE(sat) ≤ 0.30 V	Reduces conduction loss in switching applications, improving efficiency in low-voltage logic-level interface circuits.

Applications

AM/FM Radio Front-End Amplifier	Portable Audio Preamp Stage
Use Scenario: Signal amplification of weak antenna-coupled RF signals prior to mixer stage in battery-powered AM/FM receivers. IC Role / Device Role / Timing Role: NPN transistor configured as common-emitter RF amplifier with tuned collector load. Use Value: 250 MHz f_T and low Cob (3 pF) preserve signal integrity and selectivity in 0.5–108 MHz bands without added compensation.	Use Scenario: Low-noise voltage amplification of microphone or line-level inputs in handheld audio recorders. IC Role / Device Role / Timing Role: Discrete NPN used in single-stage CE amplifier with emitter degeneration for stable gain and THD control. Use Value: O-class h_FE (90–180) and V_BE(on) = 0.55–0.65 V enable accurate biasing with 3.3 V or 5 V supplies and minimal component count.
High-Frequency Oscillator Core	Logic-Level Interface Driver
Use Scenario: Active device in Colpitts or Hartley oscillator topologies generating local oscillator signals for IF conversion. IC Role / Device Role / Timing Role: NPN transistor providing gain and phase shift in resonant tank feedback loop. Use Value: Verified f_T of 250 MHz and low V_CE(sat) support reliable oscillation startup and amplitude stability at 30–80 MHz.	Use Scenario: Level-shifting and current boosting between microcontroller GPIO and higher-current loads like LEDs or small relays. IC Role / Device Role / Timing Role: Switching transistor operating in saturation/cutoff modes controlled by digital logic. Use Value: V_CE(sat) ≤ 0.30 V and I_C = 100 mA rating allow direct drive of 20 mA LED strings or 50 mA relay coils with <100 mW dissipation.

AM/FM Radio Front-End Amplifier

Portable Audio Preamp Stage

Use Scenario: Signal amplification of weak antenna-coupled RF signals prior to mixer stage in battery-powered AM/FM receivers.

IC Role / Device Role / Timing Role: NPN transistor configured as common-emitter RF amplifier with tuned collector load.

Use Value: 250 MHz f_T and low Cob (3 pF) preserve signal integrity and selectivity in 0.5–108 MHz bands without added compensation.

Use Scenario: Low-noise voltage amplification of microphone or line-level inputs in handheld audio recorders.

IC Role / Device Role / Timing Role: Discrete NPN used in single-stage CE amplifier with emitter degeneration for stable gain and THD control.

Use Value: O-class h_FE (90–180) and V_BE(on) = 0.55–0.65 V enable accurate biasing with 3.3 V or 5 V supplies and minimal component count.

High-Frequency Oscillator Core

Logic-Level Interface Driver

Use Scenario: Active device in Colpitts or Hartley oscillator topologies generating local oscillator signals for IF conversion.

IC Role / Device Role / Timing Role: NPN transistor providing gain and phase shift in resonant tank feedback loop.

Use Value: Verified f_T of 250 MHz and low V_CE(sat) support reliable oscillation startup and amplitude stability at 30–80 MHz.

Use Scenario: Level-shifting and current boosting between microcontroller GPIO and higher-current loads like LEDs or small relays.

IC Role / Device Role / Timing Role: Switching transistor operating in saturation/cutoff modes controlled by digital logic.

Use Value: V_CE(sat) ≤ 0.30 V and I_C = 100 mA rating allow direct drive of 20 mA LED strings or 50 mA relay coils with <100 mW dissipation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN small-signal transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
BC846BMTF	h_FE = 200–450 (higher gain), V_CEO = 65 V, same SOT-23 package	Higher gain improves sensitivity in low-input-signal amplifiers but may reduce stability margin in oscillators	Select when higher DC gain is required and V_CEO headroom above 50 V is beneficial
MMBT3904LT1G	h_FE = 100–300 (broader spread), V_CEO = 40 V (lower), same SOT-23	Lower V_CEO restricts use in 48 V systems; wider h_FE range increases bias design variability	Choose for cost-sensitive designs where 40 V max rating suffices and gain tolerance is acceptable

Compared with BC846BMTF and MMBT3904LT1G, KSC1623OMTF offers tighter h_FE binning (90–180), higher V_CEO than MMBT3904LT1G, and lower f_T than BC846BMTF - making it optimal for stable, medium-gain VHF oscillator and amplifier designs where predictable gain and voltage margin are prioritized over maximum bandwidth or gain.

Availability

KSC1623OMTF is available at Aetrix Electronics and suitable for AM/FM radio front-ends, portable audio preamplifiers, and high-frequency oscillator circuits requiring stable component supply, consistent h_FE binning, and SOT-23 footprint compatibility.

Supply support for KSC1623OMTF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power and signal management solutions, with core expertise in discrete devices, analog ICs, and intelligent power modules.

KSC1623OMTF belongs to ON Semiconductor's legacy Fairchild small-signal transistor portfolio, engineered for reliability and consistency in consumer, industrial, and communications signal-path applications.

FAQ

What is the h_FE range for KSC1623OMTF?

The KSC1623OMTF is binned to the O-class h_FE specification, guaranteeing a DC current gain range of 90 to 180 when measured at V_CE = 6 V and I_C = 1 mA. This tight binning allows predictable bias network design without post-production calibration. The KSC1623OMTF datasheet confirms this range is tested and guaranteed per unit, not typical or average.

Does KSC1623OMTF support high-frequency oscillator use?

Yes, KSC1623OMTF supports high-frequency oscillator applications due to its specified f_T of 250 MHz at V_CE = 6 V and I_C = 10 mA. Its low output capacitance (C_ob = 3 pF at V_CB = 6 V) and stable gain profile make it suitable for Colpitts and Hartley oscillator topologies operating up to 80 MHz. The KSC1623OMTF has been validated in such roles per Fairchild's original application notes.

What is the maximum power dissipation for KSC1623OMTF?

KSC1623OMTF has a rated power dissipation (P_D) of 200 mW at T_A = 25 °C, with a derating factor of 1.6 mW/°C above that temperature. Its thermal resistance R_θJA is 625 °C/W on a standard FR-4 PCB (76 mm × 114 mm). Therefore, KSC1623OMTF must be operated below 200 mW under ambient conditions or with appropriate board-level thermal management to avoid exceeding T_J = 150 °C.

Is KSC1623OMTF pin-compatible with other SOT-23 NPN transistors?

KSC1623OMTF uses the standard SOT-23 pinout: Pin 1 = Base, Pin 2 = Emitter, Pin 3 = Collector. It shares this configuration with industry-standard NPN transistors like MMBT3904 and BC846, enabling direct PCB footprint reuse. However, electrical parameters (e.g., h_FE, V_CEO, f_T) differ, so circuit validation is required when substituting. The KSC1623OMTF pinout is confirmed in the official datasheet Figure 7 and marking diagram.

What does the 'O' in KSC1623OMTF signify?

The 'O' in KSC1623OMTF denotes the h_FE gain classification bin, specifying a guaranteed DC current gain range of 90–180 at V_CE = 6 V and I_C = 1 mA. This letter code is part of Fairchild's standardized binning system and is physically laser-marked as 'C1O' on the device. The KSC1623OMTF marking and binning are documented in the ordering information table of the official datasheet Rev. 1.1.0.

KSC1623OMTF Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-236-3, SC-59, SOT-23-3

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 100 mA

Voltage - Collector Emitter Breakdown (Max):: 50 V

Vce Saturation (Max) @ Ib, Ic:: 300mV @ 10mA, 100mA

Current - Collector Cutoff (Max):: 100nA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 90 @ 1mA, 6V

Power - Max:: 200 mW

Frequency - Transition:: 250MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-23-3

KSC1623OMTF FAQ

1.How can I place an order for KSC1623OMTF through Aetrix?

Please submit a Request for Quotation (RFQ) for KSC1623OMTF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSC1623OMTF reliable?

The price and inventory of KSC1623OMTF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC1623OMTF is usually 5 days.

3.What payment methods are accepted for KSC1623OMTF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC1623OMTF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSC1623OMTF?

KSC1623OMTF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSC1623OMTF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSC1623OMTF?

For technical support, including KSC1623OMTF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC1623OMTF requirements.

6.How does Aetrix verify that KSC1623OMTF is sourced from the original manufacturer or authorized distributors?

All KSC1623OMTF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC1623OMTF meets industry standards.

7.What is the process for return or replacement of KSC1623OMTF?

All KSC1623OMTF units undergo pre-shipment inspection (PSI). If there is an issue with KSC1623OMTF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSC1623OMTF part is unused and in its original packaging.

Return procedure for KSC1623OMTF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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