onsemi KSC2334R

Overview

KSC2334R from ON Semiconductor is an NPN epitaxial silicon power transistor in TO-220 package, rated for 100 V V_CEO, 7 A DC collector current, and 40 W collector dissipation at T_C = 25°C. It delivers high-speed switching (t_ON = 0.5 µs, t_F = 1.5 µs) with low saturation voltages (V_CE(sat) = 0.6 V @ 5 A/0.5 A), suited for industrial motor control and SMPS primary-side switching.

For engineers reviewing the KSC2334R datasheet, pinout, applications, or equivalent options, key selection criteria include its 100 V blocking capability, 15 A pulsed current rating, h_FE classification R (40–80 @ 3 A), TO-220 thermal performance, and complementary pairing with KSA1010 for push-pull topologies.

Technical Context

The KSC2334R operates as a high-voltage, medium-current NPN bipolar junction transistor optimized for hard-switching applications. Its design supports sustained collector-emitter voltage of 100 V under inductive load conditions (V_CEO(sus) = 100 V, I_C = 5 A, L = 1 mH) and features robust safe operating area (SOA) up to 100 µs pulse width at 100 V.

It exhibits controlled switching dynamics with t_STG = 0.5 µs and t_F = 1.5 µs under specified test conditions (V_CC = 50 V, R_L = 10 Ω), and maintains stable h_FE across 0.5–5 A collector current range-40 min @ 3 A, 20 min @ 5 A-enabling predictable base drive design.

Key Specifications

Pinout & Package

Package: TO-220 (JEDEC variation AB), single-ended through-hole, insulated tab, standard mounting hole pattern. Thermal resistance R_θJC ≈ 0.625 °C/W (derived from P_C = 40 W and ΔT = 25°C).

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJD122G and 2SD1762, the KSC2334R offers tighter h_FE binning (R-class), faster fall time (1.5 µs), and proven compatibility with KSA1010 in legacy industrial designs-making it preferred where thermal interface, switching speed, and complementary pairing are critical.

Availability

KSC2334R is available at Aetrix Electronics and suitable for industrial motor drives, switch-mode power supplies, and DC-DC converters requiring stable component supply and long-term manufacturing continuity.

Supply support for KSC2334R includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global supplier of energy-efficient semiconductor components, specializing in power management, analog, and discrete devices for industrial, automotive, and computing markets.

The KSC2334R belongs to ON Semiconductor's high-voltage bipolar power transistor product line, engineered for ruggedized industrial switching applications demanding reliability under repetitive inductive stress and wide temperature operation.

FAQ

What is the maximum continuous collector current rating for the KSC2334R?

The KSC2334R has a maximum continuous collector current (I_C) rating of 7 A at case temperature T_C = 25°C. This rating decreases with rising case temperature per the published derating curve-e.g., ~4.5 A at T_C = 100°C. Operation beyond this limit risks thermal runaway and permanent damage. The KSC2334R must be mounted on an appropriately sized heatsink to maintain safe junction temperature.

Does the KSC2334R have a built-in base-emitter resistor or protection diode?

No, the KSC2334R is a standard three-terminal NPN bipolar transistor with no integrated base-emitter resistor or protection diode. External base current limiting and optional BE clamping (e.g., Zener) must be implemented per circuit requirements. The KSC2334R datasheet confirms pin configuration as Base–Collector–Emitter (1–2–3) with no internal passive components.

Is the KSC2334R pin-compatible with the KSC2334 (without suffix)?

Yes-the KSC2334R is the R-grade binned version of the base KSC2334, sharing identical pinout (1=Base, 2=Collector, 3=Emitter), package (TO-220), and absolute maximum ratings. The "R" suffix denotes h_FE = 40–80 at I_C = 3 A; other variants (e.g., O, Y) differ only in gain binning-not physical or electrical compatibility.

What is the safe operating area (SOA) limitation for the KSC2334R at 100 V?

At V_CE = 100 V, the KSC2334R's SOA limits continuous DC operation to approximately 0.4 A, but supports up to 5 A for pulse widths ≤100 µs (per Figure 4). This reflects second breakdown constraints-designers must verify transient conditions using the published SOA graph and avoid simultaneous high voltage/current beyond the boundary curve. The KSC2334R's SOA is validated under clamped inductive switching per JEDEC standards.

Can the KSC2334R be used as a direct replacement for the KSA1010 in a circuit?

No-the KSC2334R is an NPN transistor, while the KSA1010 is a PNP device; they are complementary, not interchangeable. Swapping them would reverse current flow and bias polarity, causing circuit failure. The KSC2334R is explicitly designed to pair *with* the KSA1010 in push-pull or H-bridge configurations-not replace it. Always observe polarity and gain direction when selecting replacements for the KSC2334R.