onsemi KSC2752OSTU

Overview

KSC2752OSTU from ON Semiconductor is a high-voltage NPN epitaxial silicon transistor designed for industrial switching applications, featuring VCEO = 400 V, IC = 0.5 A (DC), PC = 10 W at TC = 25°C, and fast switching times (tON = 1 µs, tF = 1 µs). It operates in TO-126 package with emitter-collector-base pinout and supports clamped inductive load switching up to 450 V sustaining voltage.

For engineers reviewing the KSC2752OSTU datasheet, pinout, applications, or equivalent options, key selection criteria include high-voltage blocking capability, pulse current handling (ICP = 1 A), DC current gain classification (R/O/Y), saturation voltages (VCE(sat) = 1 V, VBE(sat) = 2 V), and thermal derating behavior across case temperatures.

Technical Context

The KSC2752OSTU is engineered for high-speed, high-voltage switching in industrial power control circuits where robust safe operating area (SOA) and reverse-bias SOA compliance are required. Its design supports clamped inductive turn-off with dual sustaining voltage ratings: VCEX(sus)1 = 450 V under active base-clamp conditions and VCEX(sus)2 = 400 V with asymmetric base drive.

It delivers stable DC current gain across operating points-hFE1 = 20–80 at IC = 0.05 A and hFE2 = 10–80 at IC = 0.3 A-and maintains low saturation losses with VCE(sat) ≤ 1 V and VBE(sat) ≤ 2 V at IC = 0.3 A / IB = 0.06 A, enabling efficient operation in relay drivers and solid-state switches.

Key Specifications

Pinout & Package

Package: TO-126 (standard outline per MKT-TO126AArev2), thermally enhanced plastic power package with exposed collector tab for heatsink mounting. Terminal lengths per TSSTU variant: D = 3.45–4.05 mm, E = 6.45–7.45 mm.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching applications.

Compared with MJD2955G and BU508AF, the KSC2752OSTU offers optimal balance of 400–450 V sustaining capability, fast 1 µs switching, and gain-binned consistency-making it uniquely suited for mid-power industrial switching where precision timing and SOA-controlled clamping are critical.

Availability

KSC2752OSTU is available at Aetrix Electronics and suitable for industrial motor control inputs, relay replacement circuits, AC line voltage detection, and capacitor discharge circuits requiring stable component supply and long-term BOM continuity.

Supply support for KSC2752OSTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and IoT applications.

The KSC2752OSTU belongs to ON Semiconductor's legacy high-voltage bipolar transistor product line, originally developed by Fairchild for rugged industrial switching-emphasizing reliability under clamped inductive stress and wide temperature operation.

FAQ

What is the maximum collector-emitter voltage rating for KSC2752OSTU?

The KSC2752OSTU has a VCEO rating of 400 V, meaning it can block up to 400 V between collector and emitter with the base open. Its VCBO rating is higher at 500 V, and under active clamped conditions (VBE(off) = −5 V), it sustains up to 450 V as VCEX(sus)1-critical for inductive load switching. These values are measured at TC = 25°C and must be derated at elevated temperatures per the published derating curve.

Does KSC2752OSTU support pulsed operation beyond its DC current rating?

Yes, the KSC2752OSTU supports pulsed collector current up to 1 A (ICP) under specified conditions: pulse width ≤ 300 µs and duty cycle ≤ 10%. This enables use in intermittent high-power events like capacitor discharge or surge suppression, provided thermal limits are observed and average power remains within the 10 W TC = 25°C dissipation envelope.

What does the "TSSTU" suffix indicate in KSC2752OSTU?

The "TSSTU" suffix identifies the specific TO-126 variant with terminal length D = 3.45–4.05 mm and E = 6.45–7.45 mm, per ON Semiconductor's MKT-TO126AArev2 mechanical drawing. This distinguishes it from standard-length or TSTU variants and ensures correct mechanical fit in automated assembly and heatsink mounting.

Is KSC2752OSTU still in active production?

No, the KSC2752OSTU is marked DISCONTINUED in official documentation. While Aetrix Electronics maintains limited legacy stock and supports obsolescence management, new designs should consider validated alternatives such as BU508AF or consult ON Semiconductor for recommended replacements aligned with current product roadmaps.

How is the hFE classification used in circuit design for KSC2752OSTU?

The KSC2752OSTU is offered in R/O/Y hFE bins (20–40 / 30–60 / 40–80 at IC = 0.05 A), allowing designers to select units with predictable DC current gain for stable base drive design. For example, an R-bin device ensures minimum hFE ≥ 20, enabling conservative resistor-based bias networks that remain functional across process variation and temperature drift-critical for industrial reliability.