onsemi KSC3296YTU

Overview

KSC3296YTU from ON Semiconductor is an NPN epitaxial silicon power transistor in TO-220F package, rated for 150 V V_CEO, 1.5 A I_C, and 20 W P_C at T_C = 25°C, with h_FE = 40–140 at I_C = 500 mA, used in linear and switching power amplifier stages.

For engineers reviewing the KSC3296YTU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) compliance, V_CE(sat) ≤ 1.5 V at I_C = 500 mA / I_B = 50 mA, f_T = 4 MHz bandwidth capability, and thermal derating behavior above 25°C case temperature.

Technical Context

This discrete NPN bipolar junction transistor operates in active, saturation, and cutoff regions with defined DC gain linearity across I_C = 0.01–10 A and V_CE = 1–100 V. Its SOA curve supports pulsed operation up to 100 ms at V_CEO = 150 V and I_C = 1.5 A, limited by secondary breakdown and thermal constraints.

The device features low output capacitance (C_ob = 35 pF at V_CB = 10 V), enabling stable high-frequency amplification, and exhibits V_BE(on) = 0.65–0.85 V at I_C = 500 mA, supporting predictable base drive design in Class-A/B amplifier topologies.

Key Specifications

Pinout & Package

Package: TO-220F (full-molded, insulated back, no metal tab contact). Dimensions comply with EIAJ SC91A except for non-standard lead pitch and support pin hole option.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN power transistor applications.

Compared with MJD32C and 2SC5200, the KSC3296YTU offers balanced 150 V/1.5 A/20 W performance in a cost-effective TO-220F through-hole package, making it optimal for mid-power linear and switching applications where insulation and moderate SOA are required.

Availability

KSC3296YTU is available at Aetrix Electronics and suitable for audio power amplifiers, DC motor drivers, linear voltage regulators, and switching power supply output stages requiring stable component supply and traceable sourcing.

Supply support for KSC3296YTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor is a global semiconductor manufacturer specializing in energy-efficient power, analog, sensor, and connectivity solutions for automotive, industrial, cloud, and consumer markets.

The KSC3296YTU belongs to ON Semiconductor's legacy Fairchild discrete transistor portfolio, designed specifically for mid-power linear amplification and switching applications demanding robust SOA and insulated packaging.

FAQ

What is the maximum continuous collector current for KSC3296YTU?

The KSC3296YTU has a maximum continuous collector current (I_C) of 1.5 A at case temperature T_C = 25°C. This rating decreases with rising temperature per the power derating curve-down to zero at T_C = 150°C. For reliable long-term operation, design must ensure thermal resistance from case to ambient (R_θCA) keeps T_C ≤ 100°C under worst-case load. The KSC3296YTU datasheet provides the full derating graph.

Is KSC3296YTU pin-compatible with KSA1304?

No, KSC3296YTU is not pin-compatible with KSA1304. While the KSC3296YTU is an NPN transistor and KSA1304 is its complementary PNP counterpart, their pinouts differ: KSC3296YTU uses Base–Collector–Emitter (1–2–3), whereas KSA1304 uses Emitter–Collector–Base (1–2–3) in the same TO-220F package. Interchanging them without PCB revision will cause circuit failure. The KSC3296YTU datasheet confirms this pinout asymmetry.

Does KSC3296YTU require a heatsink in normal operation?

Yes, the KSC3296YTU requires a heatsink for any continuous operation above ~0.5 A or when power dissipation exceeds ~3 W. With P_C = 20 W at T_C = 25°C and R_θJC ≈ 0.75°C/W, even modest loads generate significant junction temperature rise. The KSC3296YTU thermal curves show rapid derating beyond 25°C case temperature-making forced-air or finned heatsinking essential for sustained 1.5 A use.

What is the typical V_BE(on) of KSC3296YTU at operating conditions?

The typical V_BE(on) of KSC3296YTU is 0.75 V at V_CE = 10 V and I_C = 500 mA, with a guaranteed range of 0.65–0.85 V. This value directly impacts base drive circuit design-e.g., a 5 V microcontroller GPIO driving the base through a 1 kΩ resistor delivers ~4.25 mA I_B, sufficient for h_FE = 100 to sustain 425 mA I_C. The KSC3296YTU datasheet specifies this parameter under standardized test conditions.

Can KSC3296YTU be used in switching power supplies?

Yes, KSC3296YTU can be used in low-to-mid frequency switching power supplies (<100 kHz), such as flyback or forward converters, provided gate/base drive is optimized for its bipolar characteristics. Its f_T = 4 MHz and C_ob = 35 pF support stable operation, but switching speed is limited by minority-carrier storage time. For higher efficiency, the KSC3296YTU should be paired with Baker clamp or anti-saturation networks. Refer to the KSC3296YTU SOA and switching waveforms in the official datasheet.