Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

onsemi KSC3503DSTSSTU

Part No.:
KSC3503DSTSSTU
Manufacturer:
onsemi
Category:
Single Bipolar Transistors
Package:
TO-225AA, TO-126-3
Datasheet:
AetrixKSC3503DSTSSTU.pdf
Description:
TRANS NPN 300V 0.1A TO-126-3
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:8,602

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

KSC3503DSTSSTU from onsemi is an NPN epitaxial silicon transistor designed for high-voltage audio and video amplifier stages, featuring VCEO = 300 V, fT = 150 MHz, hFE = 60–120 (at IC = 10 mA), VCE(sat) = 0.6 V, and Cob = 1.8–2.6 pF - deployed in CRT video output and low-THD voltage amplification circuits.

For engineers reviewing the KSC3503DSTSSTU datasheet, pinout, applications, or equivalent options, key selection criteria include high-voltage breakdown margin, gain linearity at audio frequencies, thermal derating above 25°C, and TO-126 package mechanical compatibility with heatsink mounting requirements.

Technical Context

This device operates as a medium-power, high-voltage NPN switching and linear amplifier transistor. Its 300 V collector-emitter and collector-base breakdown ratings support operation in CRT anode drive and flyback regulator feedback paths, while its 150 MHz fT enables stable gain up to VHF band edges in tuned RF amplifier sections.

The low reverse transfer capacitance (Cre = 1.8 pF at VCB = 30 V) minimizes Miller effect distortion in common-emitter configurations, and its hFE linearity across IC = 1–100 mA supports low-THD audio preamplifier design without degeneration resistors.

Key Specifications

ParameterValue and Actual Design Meaning
VCEO300 V - supports direct connection to CRT anode supplies or flyback transformer secondary without external snubbing
fT150 MHz - enables stable small-signal amplification up to UHF band in tuned video driver stages
hFE60–120 @ IC = 10 mA - provides predictable DC bias stability in Class-A voltage amplifier topologies
Cob1.8–2.6 pF @ VCB = 30 V - reduces high-frequency phase shift and instability risk in broadband emitter-follower buffers
PC7 W @ TC = 25°C - requires minimum pad size PCB layout and heatsink interface for sustained 100 mA DC operation
RJC17.8 °C/W - defines thermal path resistance from junction to case, critical for calculating safe operating area under pulse conditions

Pinout & Package

Package: TO-126-3LD (Case 340AS), surface-mountable with tab-connected collector, thermally enhanced for vertical heatsink attachment.

Pin/TerminalCircuit RoleDesign Meaning
1 (Emitter)Current sink terminalLow-impedance return path; must be routed with minimal inductance in high-speed switching applications
2 (Collector)Current source terminalInternally connected to metal tab; electrically and thermally coupled to heatsink - requires isolation if chassis-ground referenced
3 (Base)Control inputHigh-impedance gate for current-controlled conduction; requires series resistor to limit IB during saturation switching

Key Features

FeatureDesign Value
High-voltage breakdownVCEO = VCBO = 300 V - eliminates need for cascaded transistors in CRT deflection and HV supply regulation
Low reverse transfer capacitanceCre = 1.8 pF @ VCB = 30 V - suppresses Miller-induced oscillation in wideband video output stages
Gain linearityhFE variation < ±15% over IC = 1–50 mA - enables THD < 0.5% in Class-A audio voltage amplifiers without emitter degeneration
Thermal modeling supportFull SPICE models provided - allows accurate transient thermal simulation of safe operating area under pulsed load conditions

Applications

Audio Voltage AmplifierCRT Video Output

Use Scenario: Low-noise, low-THD preamplifier stage in analog audio mixing consoles and broadcast equipment.

IC Role / Device Role / Timing Role: NPN linear amplifier operating in Class-A with fixed emitter bias and no global feedback.

Use Value: hFE linearity and low Cob maintain harmonic integrity below −80 dB THD+N across 20 Hz–20 kHz bandwidth.

Use Scenario: Final video driver stage feeding CRT grid or cathode in legacy monitor and oscilloscope designs.

IC Role / Device Role / Timing Role: High-voltage, medium-current emitter-follower buffer with fast edge response.

Use Value: 300 V VCEO withstands CRT blanking transients; 150 MHz fT preserves 10 MHz video bandwidth with < 1 ns rise time.

General Purpose AmplifierCurrent Source Reference

Use Scenario: DC-coupled gain block in industrial signal conditioning modules requiring rail-to-rail input swing.

IC Role / Device Role / Timing Role: Single-transistor common-emitter amplifier with active load and temperature-compensated bias.

Use Value: Stable hFE and low ICBO (< 0.1 μA) ensure < 0.1% gain drift over −40°C to +85°C ambient.

Use Scenario: Precision constant-current sink in LED biasing and sensor excitation circuits.

IC Role / Device Role / Timing Role: Emitter-degenerated NPN current source with base voltage reference and thermal tracking.

Use Value: Low VBE(sat) = 1.0 V and tight BVEBO = 5 V tolerance enable accurate 10–100 mA sourcing with < 2% error over temperature.

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN high-voltage amplifier applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
KSC3502DSTSSTUVCEO = 200 V, fT = 120 MHz, hFE = 50–100 - lower voltage rating and reduced bandwidthSuitable only for sub-200 V video drivers or audio stages with relaxed slew rate requirementsSelect when system max VCE < 200 V and cost sensitivity outweighs performance margin
KSC2383YTAVCEO = 160 V, TO-92 package, PC = 0.625 W - significantly lower power handling and voltage capabilityLimited to low-power signal amplification; not viable for CRT or HV supply applicationsChoose only for space-constrained PCBs where thermal and voltage margins are non-critical

Compared with KSC3502DSTSSTU and KSC2383YTA, the KSC3503DSTSSTU delivers superior voltage headroom, higher fT, and greater thermal capacity - making it the sole option among the three for 300 V CRT video output and high-fidelity audio amplifier designs requiring >7 W dissipation.

Availability

KSC3503DSTSSTU is available at Aetrix Electronics and suitable for CRT display systems, analog audio equipment, and industrial HV amplifier modules requiring stable component supply and long-term obsolescence management.

Supply support for KSC3503DSTSSTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier specializing in energy-efficient power, analog, sensing, and connectivity solutions for automotive, industrial, and cloud infrastructure markets.

The KSC3503DSTSSTU belongs to onsemi's high-voltage bipolar transistor product line, engineered specifically for legacy and replacement CRT, analog video, and high-fidelity audio applications demanding robustness at 300 V and linearity across audio frequency bands.

FAQ

What is the maximum continuous collector current for KSC3503DSTSSTU at 25°C case temperature?

The KSC3503DSTSSTU supports a maximum continuous collector current (IC) of 100 mA at TC = 25°C, as specified in the Absolute Maximum Ratings table. At elevated case temperatures, this rating decreases per the thermal derating curve - e.g., to ~30 mA at TC = 100°C. Operation beyond 100 mA DC requires pulse-mode verification against the Safe Operating Area (SOA) graph in the datasheet.

Does KSC3503DSTSSTU have a Pb-free and RoHS-compliant construction?

Yes, the KSC3503DSTSSTU is explicitly stated as Pb-free and RoHS compliant in the official onsemi datasheet (Rev. 3, April 2025). The TO-126-3LD package uses lead-free terminations and complies with EU Directive 2011/65/EU and related amendments, verified through onsemi's material declarations and test reports.

What is the typical base-emitter saturation voltage (VBE(sat)) for KSC3503DSTSSTU?

The typical VBE(sat) for KSC3503DSTSSTU is 1.0 V at IC = 20 mA and IB = 2 mA, as listed in the Electrical Characteristics table. This value reflects the forward-biased base-emitter junction drop under hard saturation conditions and is critical for calculating required base drive current in switching applications.

Can KSC3503DSTSSTU be used as a direct replacement for KSA1381 in complementary amplifier designs?

No - KSC3503DSTSSTU is an NPN transistor and serves as the complement to the PNP KSA1381, not a replacement. They are paired in push-pull or quasi-complementary output stages. Substituting KSC3503DSTSSTU for KSA1381 would invert polarity and cause circuit failure; correct usage requires matching both devices in complementary symmetry configurations.

Is SPICE modeling support available for KSC3503DSTSSTU?

Yes, full thermal and electrical SPICE models for KSC3503DSTSSTU are officially provided by onsemi, as noted in the Features section of the datasheet. These models include junction-to-case thermal dynamics and nonlinear capacitance behavior, enabling accurate transient simulation of switching transitions and thermal runaway risk in amplifier designs.

KSC3503DSTSSTU Specifications

Product attributes
Attribute value
Manufacturer:
onsemi
Series:
-
Package/Case:
TO-225AA, TO-126-3
Packaging:
Tube
Product Status:
Obsolete
Transistor Type:
NPN
Current - Collector (Ic) (Max):
100 mA
Voltage - Collector Emitter Breakdown (Max):
300 V
Vce Saturation (Max) @ Ib, Ic:
600mV @ 2mA, 20mA
Current - Collector Cutoff (Max):
100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce:
60 @ 10mA, 10V
Power - Max:
7 W
Frequency - Transition:
150MHz
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-126-3

KSC3503DSTSSTU FAQ

1.How can I place an order for KSC3503DSTSSTU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSC3503DSTSSTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSC3503DSTSSTU reliable?

The price and inventory of KSC3503DSTSSTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC3503DSTSSTU is usually 5 days.

3.What payment methods are accepted for KSC3503DSTSSTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC3503DSTSSTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSC3503DSTSSTU?

KSC3503DSTSSTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSC3503DSTSSTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSC3503DSTSSTU?

For technical support, including KSC3503DSTSSTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC3503DSTSSTU requirements.

6.How does Aetrix verify that KSC3503DSTSSTU is sourced from the original manufacturer or authorized distributors?

All KSC3503DSTSSTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC3503DSTSSTU meets industry standards.

7.What is the process for return or replacement of KSC3503DSTSSTU?

All KSC3503DSTSSTU units undergo pre-shipment inspection (PSI). If there is an issue with KSC3503DSTSSTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSC3503DSTSSTU part is unused and in its original packaging.

Return procedure for KSC3503DSTSSTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

KSC3503DSTSSTU Tags

  • KSC3503DSTSSTU
  • KSC3503DSTSSTU PDF
  • KSC3503DSTSSTU Datasheet
  • KSC3503DSTSSTU Specifications
  • KSC3503DSTSSTU Images
  • onsemi
  • onsemi KSC3503DSTSSTU
  • Buy KSC3503DSTSSTU
  • KSC3503DSTSSTU Price
  • KSC3503DSTSSTU Distributor
  • KSC3503DSTSSTU Supplier
  • KSC3503DSTSSTU Wholesale
Related Products
MMBT3906LT1G
MMBT3906LT1G

onsemi

MMBT3904-7-F
MMBT3904-7-F

Diodes Incorporated

MMBT3904LT1G
MMBT3904LT1G

onsemi

MMBT3906-7-F
MMBT3906-7-F

Diodes Incorporated

MMBT3904-TP
MMBT3904-TP

Micro Commercial Co

MMBT2222A-7-F
MMBT2222A-7-F

Diodes Incorporated

BC846BLT1G
BC846BLT1G

onsemi

BC847B,215
BC847B,215

Nexperia USA Inc.

SMMBT3904LT1G
SMMBT3904LT1G

onsemi

MMBT2222A-TP
MMBT2222A-TP

Micro Commercial Co

MMBTA06LT1G
MMBTA06LT1G

onsemi

MMBT2222ALT1G
MMBT2222ALT1G

onsemi

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER