onsemi KSC5019MTA

Overview

KSC5019MTA from ON Semiconductor (formerly Fairchild) is an NPN epitaxial silicon transistor designed for medium-power switching and linear amplification in consumer and industrial electronics. It delivers V_CEO = 10 V, I_C = 2 A DC, V_CE(sat) = 0.5 V at I_C = 2 A / I_B = 50 mA, h_FE up to 600, and f_T = 150 MHz - enabling use in relay drivers, power supply control stages, and audio preamplifier circuits.

For engineers reviewing the KSC5019MTA datasheet, pinout, applications, or equivalent options, key selection criteria include its TO-92 package compatibility, low saturation voltage under high-current drive, DC current gain classification (L–P), safe operating area limits, and thermal resistance of 160 °C/W in standard FR-4 PCB mounting.

Technical Context

The KSC5019MTA operates as a general-purpose bipolar junction transistor with emitter-common configuration, optimized for saturated switching and moderate-frequency amplification. Its design supports DC biasing with base-emitter on voltage of 0.86–1.50 V and collector-emitter breakdown of 10 V at I_C = 10 mA.

Thermal performance is defined by R_θJA = 160 °C/W on a 76 mm × 114 mm FR-4 board, and safe operating area (SOA) is validated for pulse currents up to 5 A (10 ms, 30% duty cycle). The device exhibits Cob = 27 pF at V_CB = 10 V, supporting stable operation below 150 MHz.

Key Specifications

Pinout & Package

Package: TO-92 3L (straight or bent lead, ammo packing). Standard through-hole plastic package with 0.2-inch lead spacing, rated for 750 mW collector power dissipation.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar NPN switching and amplification applications.

Compared with BC337-40 and MPSA42, the KSC5019MTA uniquely balances 2 A DC current capability with 10 V V_CEO and low saturation voltage - making it optimal for cost-sensitive, medium-current switching where thermal budget and conduction loss are critical.

Availability

KSC5019MTA is available at Aetrix Electronics and suitable for relay driver circuits, DC-DC converter switching stages, and LED current control requiring stable component supply, consistent parametric binning (L–P h_FE classification), and long-term TO-92 packaging continuity.

Supply support for KSC5019MTA includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

ON Semiconductor (formerly Fairchild Semiconductor) is a global leader in intelligent power and sensing solutions, serving automotive, industrial, cloud computing, and consumer markets with energy-efficient semiconductor technologies.

The KSC5019MTA belongs to ON Semiconductor's legacy general-purpose bipolar transistor family, engineered for reliability and consistency in cost-sensitive, high-volume linear and switching applications across consumer electronics and industrial controls.

FAQ

What is the maximum continuous collector current rating for the KSC5019MTA?

The KSC5019MTA has a maximum continuous collector current (I_C) rating of 2 A at T_A = 25 °C. This rating assumes proper PCB thermal management - specifically, a 76 mm × 114 mm FR-4 board with minimum land pattern - and must be derated linearly above 25 °C ambient per the 160 °C/W R_θJA specification. Operation beyond this limit risks thermal runaway or permanent junction damage.

Does the KSC5019MTA support pulse current operation beyond its DC rating?

Yes, the KSC5019MTA supports pulse collector current (I_CP) up to 5 A under specified conditions: pulse width ≤ 10 ms and duty cycle ≤ 30%. This capability is validated in the Safe Operating Area (SOA) curve and enables short-duration surge handling in motor start-up, relay pull-in, or capacitor charging circuits - provided average power remains within the 750 mW PC limit.

How does the h_FE classification (L/M/N/P) affect KSC5019MTA selection?

The KSC5019MTA is manufactured in four h_FE bins: L (140–240), M (200–330), N (300–450), and P (420–600). Each unit is marked "C5019" and sorted per bin; the classification directly impacts base drive requirements - e.g., a P-bin part may operate with ~30 mA I_B at I_C = 2 A, while an L-bin part may require ≥70 mA. Designers should specify bin preference during ordering to ensure consistent bias network behavior.

Can the KSC5019MTA replace a 2N2222A in existing designs?

The KSC5019MTA is not a direct replacement for the 2N2222A due to key differences: lower V_CEO (10 V vs. 40 V), higher I_C (2 A vs. 800 mA), and different h_FE range. It can substitute in 2N2222A applications only if the circuit operates ≤10 V and demands ≥1.5 A collector current - but requires verification of base drive strength, SOA compliance, and thermal layout, as the KSC5019MTA dissipates more power at equivalent current levels.

What is the guaranteed minimum V_CE(sat) for the KSC5019MTA under full-load conditions?

The KSC5019MTA guarantees V_CE(sat) ≤ 0.5 V at I_C = 2 A and I_B = 50 mA, with a typical value of 0.2 V under those same conditions. This specification is tested and binned per JEDEC JESD22-A108 stress standards and applies across the full operating temperature range (−55 °C to 150 °C junction), ensuring reliable low-loss switching performance in thermally demanding environments.