My Inquiry
My Account
onsemi KSC5025OTU
- Part No.:
- KSC5025OTU
- Manufacturer:
- onsemi
- Category:
- Single Bipolar Transistors
- Package:
- TO-3P-3, SC-65-3
- Datasheet:
-
KSC5025OTU.pdf
- Description:
- TRANS NPN 500V 15A TO-3PN
- Quantity:
- Payment:
- Shipping:
Inventory:3,961
Please send an inquiry. Send us your inquiry, and we will respond immediately.
Product details
Overview
KSC5025OTU from ON Semiconductor (formerly Fairchild) is an NPN silicon power transistor designed for high-voltage switching in industrial and power conversion systems. It supports 800 V collector-base voltage, 500 V collector-emitter voltage, 15 A DC collector current, and operates up to 150 °C junction temperature - enabling use in flyback converters, motor drives, and solid-state relays.
For engineers reviewing the KSC5025OTU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) robustness at high VCE, low saturation voltage (VCE(sat) = 1 V @ 6 A), and fast switching (tON = 0.5 µs, tF = 0.3 µs) under clamped inductive loads.
Technical Context
This device is a ruggedized bipolar junction transistor optimized for high-voltage, medium-power switching with wide SOA and clamped inductive load capability. Its design emphasizes sustained voltage blocking (BVCBO = 800 V), controlled turn-off behavior (tSTG = 3 µs), and thermal stability via TO-3P metal package with 100 W dissipation at TC = 25 °C.
It features dual-base drive compatibility (IB1/IB2 specified), emitter-follower-compatible base-emitter saturation (VBE(sat) = 1.5 V @ 6 A), and output capacitance (Cob = 160 pF) suited for resonant and hard-switched topologies operating below 18 MHz fT.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VCBO | 800 V - Withstands 800 V between collector and base with emitter open, critical for snubberless high-side switch designs. |
| VCEO | 500 V - Maximum continuous collector-emitter voltage before breakdown, defining usable bus voltage range in offline SMPS. |
| IC (DC) | 15 A - Sustained collector current rating, supporting 1–2 kW power stages with appropriate heatsinking. |
| VCE(sat) | 1 V @ IC = 6 A, IB = 1.2 A - Low conduction loss enables >90% efficiency in medium-frequency switching applications. |
| fT | 18 MHz - Current gain bandwidth product indicating usable switching frequencies up to ~1–2 MHz with adequate drive. |
| tON/tF | 0.5 µs / 0.3 µs - Fast switching transitions reduce switching losses in hard-switched converters operating at 20–100 kHz. |
| SOA (Clamped) | Rated to 500 V @ 5 A with L = 500 µH - Validated safe operation under worst-case inductive turn-off stress without secondary breakdown. |
Pinout & Package
Package: TO-3P (isolated metal tab, full-molded plastic body, 19.9 mm × 18.7 mm × 23.4 mm). Mounting hole Ø3.20 mm, case temperature sensing point defined at center of tab.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| 1 (Base) | Control electrode | Receives forward base current (IB ≤ 4 A) to saturate transistor; requires active turn-off drive for reliable commutation. |
| 2 (Collector) | High-voltage power terminal | Connected to primary-side high-voltage rail (e.g., 400 V DC bus); electrically isolated from tab in TO-3P variant. |
| 3 (Emitter) | Power return path | Serves as common reference for load and base drive; low-inductance layout essential to minimize switching overshoot. |
Key Features
| Feature | Design Value |
|---|---|
| Wide Safe Operating Area (SOA) | Validated clamped inductive SOA up to 500 V / 5 A - enables reliable operation in flyback and forward converters without snubbers. |
| High Voltage Blocking | 800 V VCBO and 500 V VCEO - supports direct connection to 380 V AC rectified mains or 400 V DC intermediate bus. |
| Fast Switching Speed | tON = 0.5 µs, tF = 0.3 µs - reduces total switching time to <1 µs, minimizing energy loss per cycle at 50–100 kHz. |
| Thermal Robustness | 150 °C max junction temperature and 100 W PC @ TC = 25 °C - accommodates high ambient environments with standard forced-air cooling. |
| Low Saturation Voltage | VCE(sat) = 1.0 V @ 6 A - cuts conduction loss by ~30% vs. comparable transistors with VCE(sat) > 1.3 V. |
Applications
| Industrial Motor Drives | AC-DC Offline SMPS |
|---|---|
Use Scenario: Driving gate of IGBT/MOSFET in three-phase inverter half-bridge legs or controlling contactor coils in PLC output modules. IC Role / Device Role / Timing Role: High-voltage level-shifting switch providing isolated base drive or direct load switching at 20–50 kHz. Use Value: Wide SOA and 500 V VCEO prevent secondary breakdown during inductive turn-off transients in motor winding control. | Use Scenario: Primary-side switching element in 500–1000 W flyback or forward converters for industrial power supplies. IC Role / Device Role / Timing Role: Main power switch handling rectified AC line voltage (up to 400 V DC) with clamped inductive turn-off. Use Value: 800 V VCBO and validated 500 V clamped SOA eliminate need for voltage-clamp snubbers, reducing BOM count and board space. |
| Solid-State Relays (SSR) | Inductive Load Switching |
Use Scenario: Replacing electromechanical relays in HVAC control panels, lighting ballasts, and heating element controllers. IC Role / Device Role / Timing Role: High-reliability, zero-crossing-capable power switch delivering galvanically isolated load control. Use Value: 15 A DC current rating and 150 °C TJ support continuous 10 A resistive loads at 60 °C ambient without derating. | Use Scenario: Controlling solenoids, transformers, and magnetic actuators in factory automation equipment. IC Role / Device Role / Timing Role: Ruggedized switching element managing 100–500 mH inductive loads with peak currents up to 25 A (pulse). Use Value: Confirmed tSTG = 3 µs and clamped VCEX(sus) = 500 V ensure predictable turn-off timing and voltage clamp integrity. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| MJD127G | Lower VCEO (100 V), higher hFE (30–120), TO-220 package, 8 A IC | Not suitable for >200 V bus applications; limited to low-voltage DC-DC and signal switching. | Select only for sub-100 V, high-gain, cost-sensitive designs where SOA and voltage rating are secondary. |
| BU508AF | Same VCEO (500 V), higher IC (18 A), TO-3PF package, 150 W PC, but slower tF (0.5 µs) | Compatible in flyback/forward converters but exhibits higher switching loss above 50 kHz due to longer fall time. | Prefer for higher-current, lower-frequency (<30 kHz) applications where thermal margin outweighs speed requirements. |
Compared with MJD127G and BU508AF, the KSC5025OTU delivers optimal balance of 500 V blocking, 15 A current, fast 0.3 µs fall time, and wide clamped SOA - making it uniquely suited for 20–100 kHz industrial SMPS where reliability under inductive stress is non-negotiable.
Availability
KSC5025OTU is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC offline SMPS, and solid-state relay designs requiring stable component supply across multi-year production cycles.
Supply support for KSC5025OTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
ON Semiconductor is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, medical, and IoT applications.
The KSC5025OTU belongs to ON Semiconductor's legacy high-voltage bipolar transistor portfolio, engineered specifically for ruggedized switching in industrial power conversion and control systems demanding long-term reliability and SOA integrity.
FAQ
What is the maximum continuous collector current rating for the KSC5025OTU?
The KSC5025OTU has a maximum DC collector current rating of 15 A at TC = 25 °C. Derating is required above 25 °C case temperature per the power derating curve in the datasheet, reaching zero current at 150 °C case temperature. This rating assumes proper heatsinking and airflow; actual usable current depends on PCB layout, thermal interface, and ambient conditions. The KSC5025OTU also supports 25 A pulsed collector current under specified duty cycle and pulse width conditions.
Does the KSC5025OTU support base-driven switching without external turn-off assistance?
No - the KSC5025OTU requires active base turn-off drive for reliable high-speed switching. Its storage time (tSTG = 3 µs) and minority-carrier nature necessitate reverse base current or low-impedance discharge path to avoid delayed turn-off and secondary breakdown. Passive RC turn-off networks may suffice at ≤20 kHz, but for full 100 kHz operation, dedicated negative drive (e.g., ±2 A peak) is recommended. The KSC5025OTU datasheet specifies IB1/IB2 drive conditions confirming this requirement.
What is the safe operating area (SOA) limit for inductive switching with the KSC5025OTU?
The KSC5025OTU is characterized for clamped inductive SOA up to 500 V and 5 A with L = 500 µH, as verified in Figure 6 of the datasheet. This defines its usable boundary during turn-off under worst-case inductive loads. Unclamped SOA is more restrictive and must be evaluated per application-specific energy (½LI²). The KSC5025OTU's SOA curve confirms no secondary breakdown up to 10 ms pulse width at 100 V, making it suitable for flyback transformer reset and motor phase commutation.
Can the KSC5025OTU replace the older KSC5025 in existing designs?
Yes - the KSC5025OTU is a direct replacement for the legacy KSC5025, sharing identical electrical specifications, pinout (Base–Collector–Emitter), TO-3P package dimensions, and thermal characteristics. The "OTU" suffix denotes tape-and-reel packaging and updated manufacturing traceability; all performance parameters including VCEO, hFE, and switching times remain unchanged. No PCB or schematic modifications are needed when substituting KSC5025OTU for KSC5025.
What is the typical base-emitter saturation voltage for the KSC5025OTU at rated current?
The typical base-emitter saturation voltage (VBE(sat)) for the KSC5025OTU is 1.5 V at IC = 6 A and IB = 1.2 A, as specified in the Electrical Characteristics table. This value remains stable across the operating temperature range (−55 °C to +150 °C) with <±0.1 V variation. Accurate drive circuit design must account for this 1.5 V drop when sizing base resistors or selecting driver ICs - underscoring why the KSC5025OTU benefits from dedicated bipolar gate drivers rather than generic logic-level sources.
KSC5025OTU Specifications
- Product attributes
- Attribute value
- Manufacturer:
- onsemi
- Series:
- -
- Package/Case:
- TO-3P-3, SC-65-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- Transistor Type:
- NPN
- Current - Collector (Ic) (Max):
- 15 A
- Voltage - Collector Emitter Breakdown (Max):
- 500 V
- Vce Saturation (Max) @ Ib, Ic:
- 1V @ 1.2A, 6A
- Current - Collector Cutoff (Max):
- 10µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce:
- 20 @ 1.2A, 5V
- Power - Max:
- 100 W
- Frequency - Transition:
- 18MHz
- Operating Temperature:
- 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-3PN
KSC5025OTU FAQ
1.How can I place an order for KSC5025OTU through Aetrix?
Please submit a Request for Quotation (RFQ) for KSC5025OTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for KSC5025OTU reliable?
The price and inventory of KSC5025OTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC5025OTU is usually 5 days.
3.What payment methods are accepted for KSC5025OTU?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC5025OTU transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for KSC5025OTU?
KSC5025OTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your KSC5025OTU order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for KSC5025OTU?
For technical support, including KSC5025OTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC5025OTU requirements.
6.How does Aetrix verify that KSC5025OTU is sourced from the original manufacturer or authorized distributors?
All KSC5025OTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC5025OTU meets industry standards.
7.What is the process for return or replacement of KSC5025OTU?
All KSC5025OTU units undergo pre-shipment inspection (PSI). If there is an issue with KSC5025OTU, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The KSC5025OTU part is unused and in its original packaging.
Return procedure for KSC5025OTU:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
KSC5025OTU Tags
-
MMBT3906LT1G
onsemi
-
MMBT3904-7-F
Diodes Incorporated
-
MMBT3904LT1G
onsemi
-
MMBT3906-7-F
Diodes Incorporated
-
MMBT3904-TP
Micro Commercial Co
-
MMBT2222A-7-F
Diodes Incorporated
-
BC846BLT1G
onsemi
-
BC847B,215
Nexperia USA Inc.
-
SMMBT3904LT1G
onsemi
-
MMBT2222A-TP
Micro Commercial Co
-
MMBTA06LT1G
onsemi
-
MMBT2222ALT1G
onsemi
Tech Hub
Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …
A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.
TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.
A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.
The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…
The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…
A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…
A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …
An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…
Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…
