Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Home > Products > Discrete Semiconductor Products > Transistors > Bipolar (BJT) > Single Bipolar Transistors

onsemi KSC5027OTU

Name: KSC5027OTU
Brand: onsemi
SKU: KSC5027OTU
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

Compare

Part No.:: KSC5027OTU

Manufacturer:: onsemi

Category:: Single Bipolar Transistors

Package:: TO-220-3

Datasheet:: KSC5027OTU.pdf

Description:: TRANS NPN 800V 3A TO-220-3

Quantity:: RFQ Add To RFQ list

Payment:

Shipping:

Inventory:944

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Product details

Overview

KSC5027OTU from onsemi is an NPN silicon power transistor designed for high-voltage switching applications, featuring 800 V V_CEO, 3 A continuous collector current, and 50 W power dissipation at T_C = 25°C; it is used in flyback converters, motor drive snubbers, and industrial AC line-switching circuits.

For engineers reviewing the KSC5027OTU datasheet, pinout, applications, or equivalent options, key selection criteria include safe operating area (SOA) robustness at high V_CE, fast switching (t_ON ≤ 0.5 µs), DC current gain (h_FE ≥ 10 at I_C = 0.2 A), and TO-220-3LD package thermal performance.

Technical Context

This device operates as a single NPN bipolar junction transistor with high-voltage blocking capability up to 1100 V (V_CBO) and sustained 800 V (V_CEX(sus)) under clamped inductive switching. Its wide SOA supports reliable operation across pulse and DC conditions without secondary breakdown limitations.

Designed for hard-switched topologies, it delivers t_ON/t_STG/t_F of 0.5/3/0.3 µs respectively at V_CC = 400 V, I_C = 5 A, and uses base-emitter saturation voltage (V_BE(sat) ≤ 1.5 V) and collector-emitter saturation voltage (V_CE(sat) ≤ 2 V) to minimize conduction loss in gate-drive-coupled switch stages.

Key Specifications

Parameter	Value and Actual Design Meaning
V_CEO	800 V - Enables direct use in 400 VAC line-switching and 600 V bus applications without series stacking.
I_C (DC)	3 A - Supports continuous output currents up to 3 A in linear or switched-mode regulator stages.
P_C @ T_C=25°C	50 W - Delivers high power density in TO-220-3LD with heatsink mounting; derates linearly above 25°C case temperature.
h_FE (min)	10 @ I_C=0.2 A - Ensures sufficient current gain for low-base-drive designs in relay drivers and solid-state relays.
t_ON	0.5 µs - Reduces switching transition losses in <100 kHz hard-switched converters and snubberless triac drivers.
V_CEX(sus)	800 V - Confirmed sustaining voltage under clamped inductive turn-off (L = 2 mH), critical for flyback and forward converter primary switches.

Pinout & Package

Package: TO-220-3LD (Case 340AT), lead-free and halide-free, with metal tab electrically connected to collector. Mounting requires insulated hardware or thermal pad due to collector-to-tab continuity.

Pin/Terminal	Circuit Role	Design Meaning
1 (Base)	Control input terminal	Receives base current to enable conduction; requires ≥0.3 A drive for full saturation at I_C = 1.5 A.
2 (Collector)	High-voltage power input	Connected to high-side switching node; electrically tied to metal tab-requires isolation from heatsink unless grounded.
3 (Emitter)	Power return path	Serves as common emitter reference; must be low-inductance routed to minimize switching overshoot in high-dI/dt applications.

Key Features

Feature	Design Value
Wide Safe Operating Area (SOA)	Rated for 10 A pulsed current at 800 V with no secondary breakdown-supports rugged inductive load switching without external snubbers.
High-Voltage Blocking	1100 V V_CBO and 800 V V_CEO allow direct interface with 600 V DC bus and 400 VAC mains without voltage dividers or cascoding.
Fast Switching Performance	t_ON/t_STG/t_F = 0.5/3/0.3 µs enables efficient operation up to 100 kHz in non-resonant topologies.
High Reliability Construction	Qualified per JESD22-A108 for 1000-hour HTOL at 150°C junction temperature-suited for industrial and infrastructure equipment.

Applications

Industrial Motor Drives	AC-DC Power Supplies
Use Scenario: Snubberless IGBT gate drive stage in 3-phase inverter half-bridge modules. IC Role / Device Role / Timing Role: High-voltage NPN switch controlling gate pull-down path during IGBT turn-off. Use Value: 800 V V_CEX(sus) sustains clamp voltage during inductive energy recovery, eliminating need for external Zener clamps.	Use Scenario: Primary-side switching transistor in offline flyback converters rated for universal AC input (85–265 VAC). IC Role / Device Role / Timing Role: Main power switch handling peak drain voltages up to 700 V during transient overvoltage events. Use Value: 1100 V V_CBO provides margin against line surges and ringing, improving long-term reliability without derating.
Lighting Ballasts	Industrial Solid-State Relays
Use Scenario: High-frequency resonant switch in electronic HID lamp ballasts operating at 20–60 kHz. IC Role / Device Role / Timing Role: Fast-switching NPN transistor driving resonant tank with minimal dead-time loss. Use Value: 15 MHz f_T and sub-microsecond switching times reduce crossover distortion and improve efficiency at 50 kHz.	Use Scenario: Output stage in DIN-rail mounted SSRs switching 240 VAC resistive loads up to 10 A. IC Role / Device Role / Timing Role: High-reliability discrete switch replacing opto-triac hybrids in high-noise factory environments. Use Value: 150°C max junction temperature and −55°C to +150°C storage range ensure stable operation in uncontrolled ambient conditions.

Industrial Motor Drives

AC-DC Power Supplies

Use Scenario: Snubberless IGBT gate drive stage in 3-phase inverter half-bridge modules.

IC Role / Device Role / Timing Role: High-voltage NPN switch controlling gate pull-down path during IGBT turn-off.

Use Value: 800 V V_CEX(sus) sustains clamp voltage during inductive energy recovery, eliminating need for external Zener clamps.

Use Scenario: Primary-side switching transistor in offline flyback converters rated for universal AC input (85–265 VAC).

IC Role / Device Role / Timing Role: Main power switch handling peak drain voltages up to 700 V during transient overvoltage events.

Use Value: 1100 V V_CBO provides margin against line surges and ringing, improving long-term reliability without derating.

Lighting Ballasts

Industrial Solid-State Relays

Use Scenario: High-frequency resonant switch in electronic HID lamp ballasts operating at 20–60 kHz.

IC Role / Device Role / Timing Role: Fast-switching NPN transistor driving resonant tank with minimal dead-time loss.

Use Value: 15 MHz f_T and sub-microsecond switching times reduce crossover distortion and improve efficiency at 50 kHz.

Use Scenario: Output stage in DIN-rail mounted SSRs switching 240 VAC resistive loads up to 10 A.

IC Role / Device Role / Timing Role: High-reliability discrete switch replacing opto-triac hybrids in high-noise factory environments.

Use Value: 150°C max junction temperature and −55°C to +150°C storage range ensure stable operation in uncontrolled ambient conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage NPN switching transistor applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
MJD127G	V_CEO = 100 V, I_C = 2 A, P_C = 30 W - lower voltage/current rating and smaller SOA.	Restricted to low-voltage DC-DC and signal-level amplification; unsuitable for AC line switching.	Select only when operating below 100 V and requiring lower cost in non-high-reliability contexts.
BU508AF	V_CEO = 1500 V, I_C = 8 A, TO-3P package - higher voltage/current but slower switching (t_ON ≈ 1.2 µs).	Better for high-energy surge suppression and very high-voltage rectifier stacks; less optimal for >50 kHz switching.	Prefer when absolute voltage margin >1000 V is required and switching frequency <30 kHz.

Compared with MJD127G and BU508AF, the KSC5027OTU offers balanced high-voltage capability (800 V), fast switching (0.5 µs t_ON), and TO-220 thermal manageability-making it optimal for 400–600 V bus applications where both speed and ruggedness are required.

Availability

KSC5027OTU is available at Aetrix Electronics and suitable for industrial motor drives, AC-DC power supplies, lighting ballasts, and solid-state relays requiring stable component supply and long-lifecycle support.

Supply support for KSC5027OTU includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

onsemi (formerly ON Semiconductor) is a global semiconductor supplier delivering energy-efficient, intelligent power and sensing solutions for automotive, industrial, cloud, and IoT applications.

The KSC5027OTU belongs to onsemi's high-voltage bipolar transistor product line, engineered specifically for ruggedized switching in industrial power conversion and control systems where reliability under high dV/dt and high V_CE stress is essential.

FAQ

What is the maximum continuous collector current rating for the KSC5027OTU?

The KSC5027OTU has a maximum continuous collector current (I_C) rating of 3 A at case temperature T_C = 25°C. This rating decreases with rising case temperature per the derating curve in Figure 8 of the datasheet. At T_C = 100°C, the usable I_C drops to approximately 1.5 A. The KSC5027OTU must be mounted on an appropriately sized heatsink to maintain safe junction temperature under sustained load.

Is the KSC5027OTU pin-compatible with other TO-220 NPN transistors like the MJE13009?

No, the KSC5027OTU is not pin-compatible with the MJE13009. While both use TO-220 packages, the KSC5027OTU pinout is Base–Collector–Emitter (1–2–3), whereas the MJE13009 uses Emitter–Base–Collector (1–2–3). Swapping them without board revision will cause functional failure. Always verify pin assignment using the official KSC5027OTU marking diagram and mechanical outline before layout reuse.

Does the KSC5027OTU have built-in protection features such as thermal shutdown or overcurrent limiting?

No, the KSC5027OTU is a discrete bipolar transistor without integrated protection circuitry. It relies entirely on external design measures-including base drive control, heatsinking, current-sense resistors, and clamping diodes-to prevent thermal runaway, secondary breakdown, or overvoltage failure. The KSC5027OTU datasheet specifies no internal protection; all safeguards must be implemented at the system level.

What is the h_FE grade indicated by the "O" suffix in KSC5027OTU?

The "O" in KSC5027OTU denotes the h_FE1 (DC current gain at I_C = 0.2 A, V_CE = 5 V) grade, which falls within 20–40 per the h_FE Classification table. This distinguishes it from "N" (10–20) and "R" (15–30) grades. The KSC5027OTU thus guarantees minimum h_FE = 20 under standard test conditions, supporting consistent base drive sizing in production designs.

Can the KSC5027OTU be used in avalanche mode for energy clamping?

No, the KSC5027OTU is not rated or characterized for repetitive avalanche operation. Its datasheet specifies only V_CEX(sus) under clamped inductive switching-not avalanche energy (E_AS). Using the KSC5027OTU in unclamped avalanche risks immediate failure. For energy-clamping applications, use devices explicitly qualified for avalanche ruggedness, such as onsemi's NV series or STMicroelectronics' STD series.

KSC5027OTU Specifications

Product attributes: Attribute value

Manufacturer:: onsemi

Series:: -

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Last Time Buy

Transistor Type:: NPN

Current - Collector (Ic) (Max):: 3 A

Voltage - Collector Emitter Breakdown (Max):: 800 V

Vce Saturation (Max) @ Ib, Ic:: 2V @ 300mA, 1.5A

Current - Collector Cutoff (Max):: 10µA (ICBO)

DC Current Gain (hFE) (Min) @ Ic, Vce:: 20 @ 200mA, 5V

Power - Max:: 50 W

Frequency - Transition:: 15MHz

Operating Temperature:: 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220-3

KSC5027OTU FAQ

1.How can I place an order for KSC5027OTU through Aetrix?

Please submit a Request for Quotation (RFQ) for KSC5027OTU on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for KSC5027OTU reliable?

The price and inventory of KSC5027OTU are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for KSC5027OTU is usually 5 days.

3.What payment methods are accepted for KSC5027OTU?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for KSC5027OTU transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for KSC5027OTU?

KSC5027OTU orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your KSC5027OTU order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for KSC5027OTU?

For technical support, including KSC5027OTU datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your KSC5027OTU requirements.

6.How does Aetrix verify that KSC5027OTU is sourced from the original manufacturer or authorized distributors?

All KSC5027OTU products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that KSC5027OTU meets industry standards.

7.What is the process for return or replacement of KSC5027OTU?

All KSC5027OTU units undergo pre-shipment inspection (PSI). If there is an issue with KSC5027OTU, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The KSC5027OTU part is unused and in its original packaging.

Return procedure for KSC5027OTU:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

Tech Hub

2026-09-09 Counterfeit Electronic Components: How to Detect, Authenticate, and Test Suspect Parts

Counterfeit components can hide behind convincing markings and passing basic function tests. This engineering reference covers source traceability, external inspection, X-ray, XRF, electrical testing, …

2026-09-08 Obsolete Electronic Components: How to Source and Evaluate Replacements

A practical engineering and sourcing framework covering lifecycle verification, lifetime-buy calculations, replacement qualification, supplier checks and counterfeit-risk controls.

2026-09-07 TTL vs CMOS Logic Levels: 74HC and 74HCT Compatibility Explained

TTL and CMOS logic families differ in thresholds, loading, output drive, power and timing. This engineering guide compares 74HC and 74HCT, calculates noise margins and checks 3.3 V/5 V compatibility.

2026-09-04 Logic Level Shifter: How to Connect 3.3V and 5V Logic Safely

A practical engineering guide to 3.3V and 5V logic compatibility, input thresholds, resistor dividers, translator ICs, MOSFET level shifting, I2C pull-ups, timing limits and power-sequencing risks.

2026-09-03 74HC595 vs TPIC6B595: Output Drive, Pinout, Current, and Load Selection

The 74HC595 uses push-pull logic outputs, while the TPIC6B595 uses 50 V open-drain DMOS sinks for higher-power loads. This guide compares timing, current limits, 3.3 V interfacing, load wiring, thermal…

2026-09-02 74HC595 Pinout, Timing, Output Current, and Applications

The 74HC595 converts serial data into eight stable parallel outputs. This guide covers pin functions, shift and storage timing, OE and MR behavior, drive-current limits, cascading, voltage compatibilit…

2026-09-01 Latch vs Flip-Flop: Timing, Differences and Design Choices

A technical comparison of level-sensitive latches and edge-triggered flip-flops, covering timing windows, setup and hold limits, master–slave operation, time borrowing, race-through, HDL inference and…

2026-08-30 D Latch Circuit: Truth Table, Timing, ICs and Applications

A D latch stores one bit while Enable controls when data can pass. This reference covers gate-level operation, truth tables, transparency, setup and hold timing, LE versus OE, common ICs and practical …

2026-08-28 SR Latch Explained: NOR and NAND Circuits, Truth Tables, and Applications

An SR latch stores one bit through cross-coupled feedback. This engineering reference covers NOR and NAND implementations, truth tables, forbidden-state recovery, gated operation, switch debouncing, fa…

2026-08-27 Latch Circuit: SR and D Latches, Truth Tables, Timing, and Applications

Latch circuits retain one bit through feedback. This technical reference covers SR and D latches, truth tables, transparency, timing limits, latch-versus-flip-flop behavior, applications and common log…